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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR172DP-T1-GE3

Name: SIR172DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR172DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR172DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR172DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK SO-8

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Product details

Overview

SIR172DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in a PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers R_DS(on) = 8.9 mΩ at V_GS = 10 V, 20 A continuous drain current (T_J = 150 °C), and 9.8 nC total gate charge - enabling high-efficiency, space-constrained DC-DC conversion.

For engineers reviewing the SIR172DP-T1-GE3 datasheet, SIR172DP-T1-GE3 pinout, SIR172DP-T1-GE3 application, or SIR172DP-T1-GE3 equivalent, key selection criteria include its low 3.5 °C/W junction-to-case thermal resistance, 1.07 mm profile, halogen-free and RoHS-compliant construction, and validated 100 % R_g and UIS testing for robustness in synchronous buck topologies.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with fast switching dynamics. Its gate charge profile (Q_g = 9.8 nC at V_GS = 4.5 V) and low Crss (120 pF) support efficient high-frequency operation in synchronous rectification circuits where gate drive loss and shoot-through immunity are critical.

The PowerPAK® SO-8 package provides a direct thermal path from the die attach pad to the PCB via exposed copper on the bottom side, delivering DPAK-equivalent thermal performance (R_thJC = 3.5 °C/W typ.) in an SO-8 footprint - eliminating layout changes when upgrading from standard SO-8 MOSFETs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V in notebook CPU VRMs with margin for transient spikes
R_DS(on)	8.9 mΩ at V_GS = 10 V - enables <2.5 W conduction loss at 16.1 A, critical for thermally constrained CPU core supplies
I_D (continuous)	20 A at T_C = 25 °C - rated for high-current high-side switch operation with heatsinking via PCB copper
Q_g	9.8 nC at V_GS = 4.5 V - minimizes gate drive power and enables clean turn-on/turn-off in 300–500 kHz sync buck converters
R_thJC	3.5 °C/W typical - allows direct thermal coupling to PCB ground plane, reducing junction temperature rise by ~40 °C vs. standard SO-8
V_GS(th)	1.2–2.5 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers
Body diode V_SD	0.85–1.2 V at I_S = 10 A - low forward drop reduces reverse recovery losses during dead-time conduction

Pinout & Package

PowerPAK® SO-8 is a leadless, surface-mount package with 1.07 mm height, 6.15 mm × 5.15 mm footprint, and exposed drain pad on the bottom side for thermal and electrical connection. Pin numbering follows standard SO-8 convention (pin 1 = source, pin 2 = source, pin 3 = source, pin 4 = gate, pin 5 = drain, pin 6 = drain, pin 7 = drain, pin 8 = drain), matching legacy SO-8 land patterns.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection for internal parallel FET cells; tied to PCB source net and thermal plane
4	Gate (G)	Control terminal requiring <10 V drive; low 0.2–2.4 Ω gate resistance enables fast edge rates with minimal ringing
5, 6, 7, 8	Drain (D)	High-current output node; bottom-side exposed copper pad must be soldered to large PCB copper area for thermal management

Key Features

Feature	Design Value
TrenchFET® technology	Enables 8.9 mΩ R_DS(on) in PowerPAK SO-8, achieving DPAK-level performance without footprint change
Optimized for high-side sync rectifier	Low Q_gd/Q_g ratio and tight V_GS(th) distribution improve shoot-through immunity and light-load efficiency
100 % R_g tested	Guarantees gate resistance ≤ 2.4 Ω, ensuring predictable gate drive timing and EMI control
100 % UIS tested	Validates ruggedness against unclamped inductive switching events common in CPU VRM load transients
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated notebook manufacturing

Applications

Mobile CPU Core VRM	Notebook GPU Power Stage
Use Scenario: High-current, high-efficiency 1–2 V output stage supplying Intel/AMD mobile processors under dynamic load from 0 to >20 A. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase buck converter, switching at 300–500 kHz with precise gate timing. Use Value: 8.9 mΩ R_DS(on) and 9.8 nC Q_g reduce conduction + switching losses by ≥15 % vs. legacy SO-8 MOSFETs, extending battery runtime.	Use Scenario: Compact, thermally dense power delivery for discrete or integrated graphics processing units in ultrabooks and thin-and-light designs. IC Role / Device Role / Timing Role: High-side switch in multiphase buck regulator, operating with tight thermal constraints due to proximity to GPU die. Use Value: 3.5 °C/W R_thJC and 1.07 mm profile enable direct PCB thermal coupling, limiting junction rise to <15 °C above board temperature at 16 A.
Embedded Controller Power Rail	USB-C PD Fast-Charge Secondary Side
Use Scenario: Always-on 3.3 V or 5 V rail generation for embedded controllers, PMICs, or security ICs in portable systems. IC Role / Device Role / Timing Role: Low-quiescent, high-reliability high-side switch supporting long-term continuous operation at moderate current. Use Value: 100 % UIS testing and -55 to 150 °C operating range ensure stable function over 10+ years of field use in mission-critical subsystems.	Use Scenario: Secondary-side synchronous rectifier in 20–45 W USB-C Power Delivery adapters targeting compact form factors. IC Role / Device Role / Timing Role: High-efficiency rectifier replacing Schottky diodes in flyback or active-clamp forward topologies. Use Value: 0.85 V body diode forward voltage and fast 14 ns t_rr minimize reverse recovery loss, improving adapter efficiency by 0.8–1.2 % at full load.

Mobile CPU Core VRM

Notebook GPU Power Stage

Use Scenario: High-current, high-efficiency 1–2 V output stage supplying Intel/AMD mobile processors under dynamic load from 0 to >20 A.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase buck converter, switching at 300–500 kHz with precise gate timing.

Use Value: 8.9 mΩ R_DS(on) and 9.8 nC Q_g reduce conduction + switching losses by ≥15 % vs. legacy SO-8 MOSFETs, extending battery runtime.

Use Scenario: Compact, thermally dense power delivery for discrete or integrated graphics processing units in ultrabooks and thin-and-light designs.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck regulator, operating with tight thermal constraints due to proximity to GPU die.

Use Value: 3.5 °C/W R_thJC and 1.07 mm profile enable direct PCB thermal coupling, limiting junction rise to <15 °C above board temperature at 16 A.

Embedded Controller Power Rail

USB-C PD Fast-Charge Secondary Side

Use Scenario: Always-on 3.3 V or 5 V rail generation for embedded controllers, PMICs, or security ICs in portable systems.

IC Role / Device Role / Timing Role: Low-quiescent, high-reliability high-side switch supporting long-term continuous operation at moderate current.

Use Value: 100 % UIS testing and -55 to 150 °C operating range ensure stable function over 10+ years of field use in mission-critical subsystems.

Use Scenario: Secondary-side synchronous rectifier in 20–45 W USB-C Power Delivery adapters targeting compact form factors.

IC Role / Device Role / Timing Role: High-efficiency rectifier replacing Schottky diodes in flyback or active-clamp forward topologies.

Use Value: 0.85 V body diode forward voltage and fast 14 ns t_rr minimize reverse recovery loss, improving adapter efficiency by 0.8–1.2 % at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR178DP-T1-GE3	R_DS(on) = 6.7 mΩ at V_GS = 10 V; Q_g = 12.5 nC; same PowerPAK SO-8 package	Higher current density; better suited for >25 A CPU core phases with aggressive thermal design	Select when lower conduction loss outweighs gate drive power increase; verify gate driver capability for higher Q_g
IRLML6344TRPBF	R_DS(on) = 28 mΩ at V_GS = 4.5 V; SOT-23 package; R_thJA = 200 °C/W	Lower cost, lower current (4.3 A); intended for low-power logic-level switching, not high-side sync rectification	Only for space-constrained, low-current auxiliary rails; not a functional replacement for SIR172DP-T1-GE3 in CPU VRMs

Compared with SiR178DP-T1-GE3, SIR172DP-T1-GE3 offers balanced gate charge and on-resistance for mainstream notebook CPU cores, while IRLML6344TRPBF serves entirely different low-power applications - making SIR172DP-T1-GE3 the optimal choice for 15–20 A high-side synchronous rectifier duty with thermal and reliability requirements.

Availability

SIR172DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, GPU power stages, embedded controller rails, and USB-C PD secondary-side rectification requiring stable component supply across high-volume production cycles.

Supply support for SIR172DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR172DP product line is designed specifically for high-density, high-efficiency DC-DC conversion in portable computing - leveraging TrenchFET® and PowerPAK® technologies to deliver DPAK-level thermal performance in SO-8-compatible footprints.

FAQ

What is the maximum continuous drain current rating for SIR172DP-T1-GE3 at 70 °C case temperature?

The SIR172DP-T1-GE3 is rated for 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area under the exposed drain pad to maintain case temperature at or below 70 °C under steady-state operation. The device's 3.5 °C/W R_thJC enables this current level without exceeding the 150 °C maximum junction temperature.

Is SIR172DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SIR172DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pin count, pin spacing (1.27 mm), and outline dimensions (6.15 mm × 5.15 mm) as the standard SO-8. Pin 1–3 are source, pin 4 is gate, and pins 5–8 are drain - allowing direct substitution on existing SO-8 land patterns without PCB redesign, though thermal pad layout should follow Vishay's recommended minimum pattern for optimal performance.

Does SIR172DP-T1-GE3 support 4.5 V gate drive for logic-level operation?

Yes, SIR172DP-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 12.4 mΩ (max) at V_GS = 4.5 V and I_D = 13.6 A, and total gate charge is 9.8 nC (typ) under those conditions. Its V_GS(th) range of 1.2–2.5 V ensures robust turn-on with 3.3 V or 4.5 V logic-level drivers, making it suitable for controller-based synchronous rectification without level-shifting circuitry.

What is the avalanche energy rating for SIR172DP-T1-GE3, and how is it validated?

The SIR172DP-T1-GE3 has a single-pulse avalanche energy rating (E_AS) of 22 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = 21 A). Crucially, the datasheet states that 100 % of units undergo Unclamped Inductive Switching (UIS) testing - a production screen that verifies each device can withstand this energy level without parametric shift or failure, ensuring field reliability in CPU VRM inductive load transients.

How does the PowerPAK® SO-8 package improve thermal performance compared to standard SO-8?

The PowerPAK® SO-8 package improves thermal performance by exposing the drain pad on the bottom surface, creating a direct low-resistance thermal path from junction to PCB. With R_thJC = 3.5 °C/W (typ), it achieves DPAK-equivalent cooling - roughly 4× better than standard SO-8 (R_thJC ≈ 16 °C/W). In practice, this reduces junction temperature rise by ~40 °C at 16 A, maintaining lower R_DS(on) and extending device lifetime in thermally dense notebook power stages.

SIR172DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 16.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 997 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR172DP-T1-GE3 FAQ

1.How can I place an order for SIR172DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR172DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR172DP-T1-GE3 reliable?

The price and inventory of SIR172DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR172DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR172DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR172DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR172DP-T1-GE3?

SIR172DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR172DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR172DP-T1-GE3?

For technical support, including SIR172DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR172DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR172DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR172DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR172DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR172DP-T1-GE3?

All SIR172DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR172DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR172DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR172DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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