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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR180ADP-T1-RE3

Name: SIR180ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR180ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR180ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR180ADP-T1-RE3.pdf

Description:: MOSFET N-CH 60V PPAK SO-8

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Product details

Overview

SIR180ADP-T1-RE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.2 mΩ at V_GS = 10 V, Q_g = 35.2 nC (typ.), and 137 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR180ADP-T1-RE3 datasheet, SIR180ADP-T1-RE3 pinout, SIR180ADP-T1-RE3 application, or SIR180ADP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal resistance R_thJC = 1.5 °C/W (max), critical for high-power density motor drive and converter designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_g = 35.2 nC at V_GS = 7.5 V) and low reverse transfer capacitance (C_rss = 34 pF) support fast, efficient hard-switching operation up to 1 MHz in isolated and non-isolated topologies.

The device features a robust body diode with t_rr = 51 ns (typ.) and Q_rr = 51 nC (typ.) at I_F = 10 A, enabling reliable synchronous rectification without external Schottky assistance. Its 100% UIS-tested ruggedness ensures survivability under transient overcurrent conditions in motor control and power supply fault scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 48 V nominal systems with margin for transients in industrial and telecom power supplies.
R_DS(on) max @ V_GS = 10 V	2.2 mΩ - enables <1 W conduction loss at 100 A, critical for high-current synchronous rectifier stages.
Q_g typ. @ V_GS = 7.5 V	35.2 nC - reduces gate drive power and allows use of lower-cost, lower-current drivers in high-frequency SMPS.
I_D continuous @ T_C = 25 °C	137 A - supports high-current primary-side switch applications without parallel devices in compact layouts.
R_thJC max	1.5 °C/W - enables direct heatsinking to PCB copper or metal-core substrates, simplifying thermal design in space-constrained modules.
V_GS(th)	2.0–3.6 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers, avoiding partial enhancement risks.
C_iss	3280 pF - balances EMI control and switching speed; low enough for MHz-class operation with moderate gate resistance.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, surface-mount, 5.15 mm × 6.15 mm footprint). Exposed drain pad on bottom provides low-inductance, high-current path and thermal conduction to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large exposed copper pad - primary thermal and current path to PCB ground plane.
G (Gate)	Gate (G)	Single gate terminal (Pin 1 top view per datasheet diagram); requires controlled slew rate to manage EMI and dV/dt-induced shoot-through.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers best-in-class R_DS(on)–Q_g and R_DS(on)–Q_oss FOMs for reduced total power loss in high-frequency converters.
100% R_g tested	Ensures consistent gate drive timing and predictable switching behavior across production lots - critical for multi-phase current sharing.
100% UIS tested	Guarantees single-pulse avalanche energy handling up to 80 mJ, supporting robust operation during output short-circuit events.
Optimized body diode	t_rr = 51 ns and Q_rr = 51 nC enable efficient synchronous rectification without voltage spikes or cross-conduction in LLC and phase-shifted full-bridge topologies.
PowerPAK® SO-8 package	Leadless construction eliminates solder wicking issues and provides 2× higher current rating vs. standard SO-8, with 0.5 mm pitch for fine-pitch layout compatibility.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom bricks). IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary PWM signal. Use Value: Reduces conduction loss by >50% vs. 40 V Schottky, improving efficiency from 92% to 95% at full load while eliminating forward voltage drop heating.	Use Scenario: High-current primary switch in non-isolated buck converters for server VRMs or GPU power delivery. IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz; handles peak currents >100 A with minimal thermal rise. Use Value: 2.2 mΩ R_DS(on) limits I²R loss to <2.2 W at 100 A, enabling single-device solution without paralleling or forced air cooling.
DC/DC Converter	Motor Drive Switch
Use Scenario: High-density point-of-load (POL) converter in networking equipment requiring <10 mm height. IC Role / Device Role / Timing Role: High-side switch in integrated buck module; thermally coupled to copper-filled thermal pad on PCB. Use Value: R_thJC = 1.5 °C/W allows junction temperature rise of only 30 °C at 50 W dissipation, maintaining reliability without heatsink.	Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for industrial automation. IC Role / Device Role / Timing Role: Low-side switch conducting continuous 75 A with pulsed peaks to 200 A during acceleration. Use Value: 75.7 A continuous source-drain diode current and 200 A pulsed rating support regenerative braking without external freewheeling diodes.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom bricks).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary PWM signal.

Use Value: Reduces conduction loss by >50% vs. 40 V Schottky, improving efficiency from 92% to 95% at full load while eliminating forward voltage drop heating.

Use Scenario: High-current primary switch in non-isolated buck converters for server VRMs or GPU power delivery.

IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz; handles peak currents >100 A with minimal thermal rise.

Use Value: 2.2 mΩ R_DS(on) limits I²R loss to <2.2 W at 100 A, enabling single-device solution without paralleling or forced air cooling.

DC/DC Converter

Motor Drive Switch

Use Scenario: High-density point-of-load (POL) converter in networking equipment requiring <10 mm height.

IC Role / Device Role / Timing Role: High-side switch in integrated buck module; thermally coupled to copper-filled thermal pad on PCB.

Use Value: R_thJC = 1.5 °C/W allows junction temperature rise of only 30 °C at 50 W dissipation, maintaining reliability without heatsink.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for industrial automation.

IC Role / Device Role / Timing Role: Low-side switch conducting continuous 75 A with pulsed peaks to 200 A during acceleration.

Use Value: 75.7 A continuous source-drain diode current and 200 A pulsed rating support regenerative braking without external freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N06N	R_DS(on) = 2.6 mΩ @ 10 V; Q_g = 42 nC; TO-220FP package (higher R_thJA = 60 °C/W).	Requires heatsink for >30 A continuous; less suitable for ultra-thin, board-mounted thermal solutions.	Preferred where through-hole mounting and legacy footprint compatibility are required; not drop-in for PowerPAK SO-8 layouts.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 2.4 mΩ @ 10 V; Q_g = 37 nC; same PowerTrench® SO-8 package but no 100% UIS test.	Lacks guaranteed avalanche ruggedness - unsuitable for motor drive fault conditions or unregulated input surges.	Valid alternative for cost-sensitive, non-fault-critical DC/DC applications; verify system-level UIS margin if used in motor control.

Compared with IPP026N06N and NTMFS4C09NT1G, the SIR180ADP-T1-RE3 offers superior thermal performance (R_thJC = 1.5 °C/W), industry-leading R_DS(on)–Q_oss optimization, and production-tested UIS capability - making it the preferred choice for high-reliability, high-power-density synchronous rectifiers and primary switches where board space and thermal headroom are constrained.

Availability

SIR180ADP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, motor drive inverters, and synchronous rectification circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for SIR180ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIR180ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion applications demanding lowest possible conduction and switching losses in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SIR180ADP-T1-RE3 at 70 °C case temperature?

The SIR180ADP-T1-RE3 supports 110 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerPAK® SO-8 package under sustained high-power operation and must be validated against actual PCB copper area and airflow in the target application.

Does SIR180ADP-T1-RE3 require a gate resistor for stable operation?

Yes - the SIR180ADP-T1-RE3 gate resistance (R_g) is specified as 0.3–1.5 Ω, and external gate resistors (typically 2–10 Ω) are recommended to control dV/dt, suppress ringing, and prevent shoot-through in half-bridge configurations. The datasheet provides switching time data with R_g = 1 Ω, serving as a reference for driver design.

Is SIR180ADP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes - the SIR180ADP-T1-RE3 is explicitly listed for synchronous rectification applications and features a fast, low-Q_rr body diode (t_rr = 51 ns, Q_rr = 51 nC) that minimizes reverse recovery losses and voltage overshoot during zero-voltage switching transitions in LLC topologies.

What is the thermal resistance from junction to ambient (R_thJA) for SIR180ADP-T1-RE3 on a standard FR4 board?

The SIR180ADP-T1-RE3 has R_thJA = 23 °C/W (maximum) when mounted on a 1" × 1" FR4 board per datasheet Note b. This value assumes no additional copper pour or thermal vias; actual R_thJA improves significantly with enhanced PCB thermal design (e.g., 2 oz copper + thermal vias).

Can SIR180ADP-T1-RE3 be used with 5 V gate drive?

Yes - the SIR180ADP-T1-RE3 has V_GS(th) = 2.0–3.6 V and R_DS(on) = 2.8 mΩ max at V_GS = 7.5 V, making it fully compatible with 5 V logic-level gate drivers. However, R_DS(on) increases ~27% versus 10 V drive, so conduction loss must be re-evaluated for thermal compliance at full load.

SIR180ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta), 137A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3280 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR180ADP-T1-RE3 FAQ

1.How can I place an order for SIR180ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR180ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR180ADP-T1-RE3 reliable?

The price and inventory of SIR180ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR180ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR180ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR180ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR180ADP-T1-RE3?

SIR180ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR180ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR180ADP-T1-RE3?

For technical support, including SIR180ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR180ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIR180ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR180ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR180ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR180ADP-T1-RE3?

All SIR180ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR180ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR180ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR180ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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