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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR182LDP-T1-RE3

Name: SIR182LDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR182LDP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR182LDP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR182LDP-T1-RE3.pdf

Description:: N-CHANNEL 60-V (D-S) MOSFET POWE

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Product details

Overview

SIR182LDP-T1-RE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.75 mΩ at V_GS = 10 V and 3.85 mΩ at 4.5 V, with 26 nC total gate charge (Q_g) and 130 A continuous drain current - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR182LDP-T1-RE3 datasheet, SIR182LDP-T1-RE3 pinout, SIR182LDP-T1-RE3 application, or SIR182LDP-T1-RE3 equivalent, key selection criteria include low R_DS(on) × Q_g FOM, 100% R_g and UIS testing, thermal resistance R_thJC = 1.5 °C/W, and compatibility with 4.5 V logic-level drive in compact power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture to minimize conduction and switching losses simultaneously, with a tuned R_DS(on) × Q_oss figure-of-merit for high-frequency hard-switched topologies. Its gate threshold voltage (V_GS(th) = 1–2.4 V) ensures robust turn-on margin under low-voltage control conditions.

The device integrates a fast-recovery body diode (t_rr = 41–82 ns, Q_rr = 36–72 nC) and is rated for 40 A single-pulse avalanche current (I_AS) with 80 mJ energy (E_AS), supporting reliable operation in OR-ing and primary-side switching where transient overvoltage stress occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 48 V nominal systems with 20 % derating margin
R_DS(on) @ 10 V	2.75 mΩ max - enables <1.5 W conduction loss at 130 A, critical for high-current power stages
R_DS(on) @ 4.5 V	3.85 mΩ max - ensures full enhancement with standard 5 V microcontroller GPIO or PWM drivers
Q_g @ 4.5 V	26 nC typ - reduces gate drive power and enables efficient operation at 500 kHz–1 MHz switching frequencies
I_D (continuous)	130 A @ T_C = 25 °C - requires direct copper pad thermal coupling for sustained high-current delivery
R_thJC	1.5 °C/W max - allows precise junction temperature estimation when heatsink interface is controlled
Q_rr	36–72 nC - minimizes reverse recovery loss and EMI in synchronous rectifier configurations

Pinout & Package

Package: PowerPAK® SO-8 - leadless surface-mount package with exposed drain copper on bottom side for enhanced thermal performance; dimensions 6.15 mm × 5.15 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to PCB copper pour for low-inductance, high-current power routing
G (Gate)	Control input	Single gate terminal located at pin 1 corner; requires low-impedance gate driver path to manage 26 nC charge efficiently

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g FOM for reduced total power loss in high-frequency SMPS
100 % R_g tested	Ensures gate resistance consistency (0.3–1.4 Ω), critical for predictable switching timing and EMI control
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events without derating
Optimized R_DS(on) × Q_oss	Minimizes capacitive switching loss during hard-commutation, especially in buck converter high-side position
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709E material compliance requirements

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., LLC resonant, forward, or active clamp flyback). IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode; conducts during transformer secondary voltage polarity reversal. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, enabling >96 % efficiency at 12 V/60 A output with 4.5 V gate drive.	Use Scenario: High-current main switch in non-isolated buck converters for server VRMs or telecom POL modules. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor; operates at 300–800 kHz. Use Value: 2.75 mΩ R_DS(on) limits I²R loss to <2.1 W at 30 A, supporting compact thermal design without forced air.
OR-ing Circuit	Battery Load Switch
Use Scenario: Redundant power supply selection in 12 V or 48 V backplane systems with hot-swap capability. IC Role / Device Role / Timing Role: Forward-conducting MOSFET that blocks reverse current when upstream supply fails; controlled via gate monitoring circuit. Use Value: Ultra-low R_DS(on) minimizes voltage drop (<40 mV at 15 A), preserving system voltage margin and reducing heat generation.	Use Scenario: High-side load switch for Li-ion battery protection in portable industrial tools or medical devices. IC Role / Device Role / Timing Role: Controlled on/off path between battery pack and system load; handles inrush and short-circuit events. Use Value: 130 A rating and 40 A avalanche capability support 10× surge currents during hot-plug events without failure.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., LLC resonant, forward, or active clamp flyback).

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode; conducts during transformer secondary voltage polarity reversal.

Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, enabling >96 % efficiency at 12 V/60 A output with 4.5 V gate drive.

Use Scenario: High-current main switch in non-isolated buck converters for server VRMs or telecom POL modules.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor; operates at 300–800 kHz.

Use Value: 2.75 mΩ R_DS(on) limits I²R loss to <2.1 W at 30 A, supporting compact thermal design without forced air.

OR-ing Circuit

Battery Load Switch

Use Scenario: Redundant power supply selection in 12 V or 48 V backplane systems with hot-swap capability.

IC Role / Device Role / Timing Role: Forward-conducting MOSFET that blocks reverse current when upstream supply fails; controlled via gate monitoring circuit.

Use Value: Ultra-low R_DS(on) minimizes voltage drop (<40 mV at 15 A), preserving system voltage margin and reducing heat generation.

Use Scenario: High-side load switch for Li-ion battery protection in portable industrial tools or medical devices.

IC Role / Device Role / Timing Role: Controlled on/off path between battery pack and system load; handles inrush and short-circuit events.

Use Value: 130 A rating and 40 A avalanche capability support 10× surge currents during hot-plug events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF182LDPBF	Same die, legacy TO-252 (DPAK) package; R_thJA = 62 °C/W vs. 25 °C/W for PowerPAK SO-8	Limited to lower-power applications (<25 A continuous); unsuitable for space-constrained board layouts	Select only when DPAK footprint is fixed and thermal budget permits higher junction rise
SiR182ADP-T1-RE3	Same PowerPAK SO-8 package but Gen V silicon; R_DS(on) = 2.45 mΩ @ 10 V, Q_g = 28 nC - slightly lower R_DS(on), higher Q_g	Better conduction loss at high current; marginally increased gate drive requirement	Prefer for new designs targeting lowest possible conduction loss; verify gate driver peak current capability ≥2 A

Compared with IRF182LDPBF and SiR182ADP-T1-RE3, the SIR182LDP-T1-RE3 offers optimal balance of ultra-low R_DS(on), moderate Q_g, and proven Gen IV reliability - making it ideal for cost-sensitive, thermally constrained 48 V input DC/DC stages where layout area and thermal interface control are prioritized.

Availability

SIR182LDP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for SIR182LDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIR182LDP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for the SIR182LDP-T1-RE3 at 70 °C case temperature?

The SIR182LDP-T1-RE3 supports 104 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature; exceeding this current without adequate heatsinking risks junction temperature exceeding 150 °C and potential device failure. The SIR182LDP-T1-RE3 must be mounted on ≥1" × 1" FR4 with 2 oz copper for rated performance.

Does the SIR182LDP-T1-RE3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SIR182LDP-T1-RE3 specifies t_rr = 41–82 ns under test conditions of I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This fast recovery characteristic is integral to its suitability in synchronous rectifier applications where body diode conduction occurs during dead-time intervals. The SIR182LDP-T1-RE3 also provides Q_rr = 36–72 nC for accurate loss modeling.

Is the SIR182LDP-T1-RE3 compatible with standard SO-8 reflow profiles?

Yes, the SIR182LDP-T1-RE3 is qualified for standard lead-free reflow with peak temperature up to 260 °C, per Vishay document 73257. As a PowerPAK® SO-8 - a leadless package - it requires careful stencil design and solder paste volume control to ensure reliable bottom-side interconnection. Manual soldering with an iron is not recommended for the SIR182LDP-T1-RE3 due to thermal mass and exposed copper singulation edge.

What is the gate-source threshold voltage range for the SIR182LDP-T1-RE3?

The SIR182LDP-T1-RE3 has a V_GS(th) range of 1.0 V to 2.4 V at I_D = 250 μA and T_J = 25 °C. This low and tightly bounded threshold enables reliable turn-on with 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity. The SIR182LDP-T1-RE3 exhibits a negative temperature coefficient of −4.6 mV/°C, ensuring stable operation across −55 to +150 °C junction range.

Can the SIR182LDP-T1-RE3 be used in avalanche-rated circuits?

Yes, the SIR182LDP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 80 mJ and current I_AS = 40 A (L = 0.1 mH). This makes the SIR182LDP-T1-RE3 suitable for circuits subject to inductive kickback, such as motor drive half-bridges or relay driving, provided pulse duration and repetition rate remain within safe operating area limits defined in the datasheet.

SIR182LDP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 31.7A (Ta), 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR182LDP-T1-RE3 FAQ

1.How can I place an order for SIR182LDP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR182LDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR182LDP-T1-RE3 reliable?

The price and inventory of SIR182LDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR182LDP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR182LDP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR182LDP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR182LDP-T1-RE3?

SIR182LDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR182LDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR182LDP-T1-RE3?

For technical support, including SIR182LDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR182LDP-T1-RE3 requirements.

6.How does Aetrix verify that SIR182LDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR182LDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR182LDP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR182LDP-T1-RE3?

All SIR182LDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR182LDP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR182LDP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR182LDP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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