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Vishay Siliconix SIR184LDP-T1-RE3
- Part No.:
- SIR184LDP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR184LDP-T1-RE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,288
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Product details
Overview
SIR184LDP-T1-RE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 5.4 mΩ @ VGS = 10 V, Qg = 12.3 nC (at 4.5 V), and 73 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIR184LDP-T1-RE3 datasheet, SIR184LDP-T1-RE3 pinout, SIR184LDP-T1-RE3 application, or SIR184LDP-T1-RE3 equivalent, key selection criteria include low RDS(on) × Qg and RDS(on) × Qoss figures of merit, 100% Rg and UIS testing, and thermal performance under high-current pulsed operation.
Technical Context
This MOSFET employs a trench-based silicon structure with optimized gate oxide and channel geometry to achieve ultra-low conduction and switching losses. Its dynamic parameters - Ciss = 1950 pF, Coss = 360 pF, Crss = 19 pF - support fast switching in hard- and resonant-mode topologies while minimizing Miller-induced turn-on risk.
The device features a robust body diode with trr = 23 ns (typ.), Qrr = 14 nC (typ.), and VSD = 0.77 V (typ. @ IS = 5 A), enabling reliable reverse recovery in synchronous buck and LLC primary-side configurations without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V input bus designs with 20 % margin for voltage transients |
| RDS(on) max @ 10 V | 5.4 mΩ - enables <1.5 W conduction loss at 18 A continuous output in 12 V → 1 V VRMs |
| RDS(on) max @ 4.5 V | 8.3 mΩ - ensures stable operation with 5 V gate drive in logic-level control circuits |
| Qg typ @ 4.5 V | 12.3 nC - reduces gate drive power and allows use of low-power drivers like Si823x isolators |
| ID continuous @ TC = 25 °C | 73 A - supports high-current single-phase power stages up to ~100 W with minimal heatsinking |
| RthJC max | 2.2 °C/W - enables direct thermal coupling to PCB copper or small heatsinks for compact thermal design |
| EAS | 20 mJ - withstands single-pulse avalanche energy during inductive turn-off events in motor drives |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, bottom-terminated), 6.15 mm × 5.15 mm footprint, exposed drain paddle for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain paddle and four top-side drain pads provide low-inductance, high-current return path to ground plane |
| G (Gate) | Control terminal | Single gate pad located adjacent to source - minimizes gate loop inductance for stable high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers best-in-class RDS(on) × Qg FOM of 66.4 mΩ·nC @ 10 V - critical for high-frequency (>500 kHz) SMPS efficiency |
| 100 % Rg tested | Ensures gate resistance ≤ 1.3 Ω - guarantees predictable turn-on/turn-off timing and driver compatibility |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching stress - required for motor drive and solenoid control |
| Low Qoss | 21.5 nC (typ.) - reduces capacitive switching loss and improves light-load efficiency in adaptive frequency controllers |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| Synchronous Rectifier in Isolated DC/DC | Primary-Side Switch in Flyback Converters |
|---|---|
Use Scenario: Used as secondary-side switch in 24–48 V input, 5–12 V output isolated flyback or forward converters operating at 100–300 kHz. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; driven synchronously by controller IC with precise dead-time control. Use Value: Achieves >2 % efficiency gain over 40 V Schottky at 10 A load due to RDS(on) = 5.4 mΩ and low Qrr body diode. |
Use Scenario: Primary switch in universal-input (85–265 VAC) flyback converters for industrial power supplies and LED drivers. IC Role / Device Role / Timing Role: High-voltage switching element handling full primary current; operates in discontinuous conduction mode (DCM). Use Value: Withstands 60 V VDS rating plus 20 % margin for reflected voltage spikes; EAS = 20 mJ prevents failure during output short-circuit events. |
| Motor Drive Half-Bridge Leg | Battery Protection Load Switch |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge drivers for robotics and automation equipment. IC Role / Device Role / Timing Role: Provides PWM-controlled current path with fast turn-on (td(on) = 12 ns typ.) and low RDS(on) for minimal I²R heating. Use Value: Enables 73 A peak current capability without external heatsink at ambient ≤ 50 °C - simplifies mechanical design. |
Use Scenario: Main load switch between Li-ion battery pack (≤ 24 V) and system load in portable medical devices and test equipment. IC Role / Device Role / Timing Role: Acts as ON/OFF controlled pass element with integrated body diode for reverse polarity protection. Use Value: RDS(on) = 8.3 mΩ @ 4.5 V gate drive ensures <0.4 V drop at 5 A - preserves battery runtime and avoids thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR178LDP-T1-RE3 | 60 V, RDS(on) = 4.2 mΩ @ 10 V, Qg = 14.2 nC - lower RDS(on) but higher gate charge | Better conduction loss at high current; less suitable for 4.5 V gate drive due to higher VGS(th) min | Select when optimizing for <100 kHz, high-duty-cycle operation with 10 V gate drive available |
| IRF7470PBF | 60 V, RDS(on) = 6.0 mΩ @ 10 V, Qg = 22 nC - higher Qg, SO-8 (leaded) package | Higher switching loss; through-hole or reflow-compatible leaded option for legacy board designs | Select only when leaded SO-8 footprint is mandatory and thermal budget allows 2.2× higher gate drive power |
Compared with SiR178LDP-T1-RE3 and IRF7470PBF, the SIR184LDP-T1-RE3 offers the optimal balance of low RDS(on) × Qg FOM and 4.5 V drive capability - making it preferred for space-constrained, high-frequency DC/DC and motor control where gate drive voltage is limited.
Availability
SIR184LDP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle assurance.
Supply support for SIR184LDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR184LDP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion and motor control where low RDS(on) × Qg and robust avalanche capability are critical.
FAQ
What is the maximum continuous drain current for SIR184LDP-T1-RE3 at 70 °C case temperature?
The SIR184LDP-T1-RE3 supports 58.7 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual PCB layout and airflow conditions. The SIR184LDP-T1-RE3 datasheet confirms this value under steady-state conduction with proper heatsinking.
Does SIR184LDP-T1-RE3 support 4.5 V gate drive in practical applications?
Yes, the SIR184LDP-T1-RE3 is fully characterized at VGS = 4.5 V, with RDS(on) max = 8.3 mΩ and Qg typ = 12.3 nC. Its gate threshold voltage range (1–3 V) ensures reliable turn-on with standard 5 V logic or microcontroller outputs. The SIR184LDP-T1-RE3 is explicitly tuned for such low-voltage drive in synchronous rectifier and battery-switching roles.
What is the thermal resistance from junction to case (RthJC) for SIR184LDP-T1-RE3?
The SIR184LDP-T1-RE3 has a maximum junction-to-case thermal resistance (RthJC) of 2.2 °C/W under steady-state conditions, with typical value of 1.8 °C/W. This low value is enabled by the exposed drain paddle in the PowerPAK SO-8 package and is critical for thermal management in high-power density designs. The SIR184LDP-T1-RE3 datasheet specifies this parameter in the Thermal Resistance Ratings table.
Is SIR184LDP-T1-RE3 suitable for avalanche-rated applications?
Yes, the SIR184LDP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy EAS = 20 mJ at L = 0.1 mH. This makes it suitable for motor drive, relay driving, and flyback primary switching where inductive energy must be safely absorbed. The SIR184LDP-T1-RE3 specification sheet confirms avalanche capability in both Absolute Maximum Ratings and Features sections.
What is the body diode forward voltage (VSD) of SIR184LDP-T1-RE3 at 5 A?
The body diode forward voltage VSD of the SIR184LDP-T1-RE3 is 0.77 V (typical) and 1.1 V (maximum) at IS = 5 A and VGS = 0 V, per the Drain-Source Body Diode Characteristics table. This low VSD supports efficient freewheeling in half-bridge and synchronous rectifier topologies. The SIR184LDP-T1-RE3 datasheet lists this parameter under "Body diode voltage" with test conditions clearly defined.
SIR184LDP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 21.5A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR184LDP-T1-RE3 FAQ
1.How can I place an order for SIR184LDP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR184LDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR184LDP-T1-RE3 reliable?
The price and inventory of SIR184LDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR184LDP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR184LDP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR184LDP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR184LDP-T1-RE3?
SIR184LDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR184LDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR184LDP-T1-RE3?
For technical support, including SIR184LDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR184LDP-T1-RE3 requirements.
6.How does Aetrix verify that SIR184LDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR184LDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR184LDP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR184LDP-T1-RE3?
All SIR184LDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR184LDP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR184LDP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR184LDP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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