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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR188DP-T1-RE3

Name: SIR188DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR188DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR188DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR188DP-T1-RE3.pdf

Description:: MOSFET N-CH 60V 25.5A/60A PPAK

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Product details

Overview

SIR188DP-T1-RE3 from Vishay Siliconix is an N-channel 60 V, 60 A PowerPAK® SO-8 single MOSFET optimized for high-efficiency DC/DC converters and synchronous rectification. It delivers R_DS(on) = 3.85 mΩ at V_GS = 10 V, Q_g = 22 nC (at 7.5 V), and features trench-based Gen IV silicon with 100% R_g and UIS testing - enabling low conduction and switching losses in compact power stages.

For engineers reviewing the SIR188DP-T1-RE3 datasheet, SIR188DP-T1-RE3 pinout, SIR188DP-T1-RE3 application, or SIR188DP-T1-RE3 equivalent, this page provides verified package mapping, thermal resistance data (R_thJC = 1.6 °C/W), body diode recovery specs (t_rr = 46 ns), and validated alternatives for motor drive and primary-side switch designs.

Technical Context

This device uses TrenchFET® Gen IV process technology to achieve ultra-low R_DS(on)–Q_g and R_DS(on)–Q_oss figures of merit. Its gate threshold voltage (V_GS(th) = 2.0–3.6 V) supports standard 5 V and 10 V gate drivers, while its 60 V V_DS rating targets 48 V input systems and automotive 36 V nominal rails.

The PowerPAK SO-8 package integrates a thermally enhanced bottom-side drain pad with SO-8 footprint compatibility. Its R_thJC = 1.6 °C/W enables high-power operation without external heatsinking when mounted on ≥0.25 in² copper, and its 100% UIS-tested ruggedness supports reliable operation under transient overloads in motor control and converter primary switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V bus systems with 20 % margin; suitable for primary-side switching in isolated DC/DC converters.
R_DS(on) max @ V_GS = 10 V	3.85 mΩ - Enables ≤0.39 W conduction loss at 10 A continuous drain current, critical for high-current synchronous rectifiers.
Q_g typ. @ V_GS = 7.5 V	22 nC - Low gate charge reduces driver power demand and switching transition time in high-frequency (>500 kHz) PWM stages.
I_D continuous @ T_C = 25 °C	60 A - Rated for high-current power delivery in motor H-bridge legs and VRM output stages with adequate board copper.
R_thJC max.	1.9 °C/W - Allows direct thermal path from die to PCB copper; enables 65.7 W dissipation at T_J = 150 °C with minimal temperature rise.
t_rr (body diode)	46 ns - Fast reverse recovery minimizes shoot-through risk and commutation loss in synchronous rectifier applications.
V_GS(th)	2.0–3.6 V - Ensures robust turn-on with standard logic-level gate drivers and avoids unintended conduction near 0 V.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, SO-8 footprint compatible, 5.15 mm × 6.15 mm × 1.04 mm). Exposed drain pad on bottom surface provides low-inductance, high-current path and direct thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with R_g = 0.3–1.5 Ω - enables fast, controlled turn-on/turn-off with minimal ringing.
6, 7, 8	Drain (D)	Three drain terminals connected to large bottom-side copper pad - carries full 60 A load current and serves as primary thermal conduction path.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_g FOM (≤0.085 Ω·nC), reducing total switching + conduction loss in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate robustness against ESD and avalanche energy handling up to 31.25 mJ - critical for unclamped inductive switching in motor drives.
Optimized R_DS(on)–Q_oss FOM	Minimizes capacitive switching loss during hard-switched transitions, especially beneficial in LLC resonant and ZVS topologies.
PowerPAK SO-8 package	Provides DPAK-equivalent thermal performance (R_thJC = 1.6 °C/W) in SO-8 footprint - eliminates PCB redesign when upgrading from standard SO-8 MOSFETs.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B - compliant for industrial, telecom, and automotive applications requiring green manufacturing.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC converters for server PSUs and telecom power supplies. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces forward voltage drop from ~0.5 V to <0.05 V at 20 A, cutting conduction loss by >80 % versus diode solution.	Use Scenario: High-side switch in flyback or active-clamp forward converters operating from 36–60 V input rails. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer primary winding; requires fast turn-off and avalanche ruggedness. Use Value: 25 A single-pulse avalanche current rating and 31.25 mJ E_AS ensure reliability during output short-circuit events.
DC/DC Converter High-Side	Motor Drive Half-Bridge
Use Scenario: High-side switch in buck or multiphase VRM for FPGA/GPU core voltage regulation (0.8–1.2 V @ 50–100 A). IC Role / Device Role / Timing Role: Upper transistor in synchronous buck stage; switched at 300–1000 kHz with bootstrap gate drive. Use Value: 3.85 mΩ R_DS(on) limits I²R loss to <0.1 W at 50 A, supporting >95 % efficiency in high-current point-of-load designs.	Use Scenario: Low-side switch in 24–48 V brushed DC or BLDC motor H-bridge drivers for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: Ground-referenced N-channel switch carrying bidirectional motor current; subjected to PWM, regenerative braking, and shoot-through stress. Use Value: 46 ns body diode t_rr and 59.7 A continuous source current rating support efficient freewheeling and regen current handling.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC converters for server PSUs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Reduces forward voltage drop from ~0.5 V to <0.05 V at 20 A, cutting conduction loss by >80 % versus diode solution.

Use Scenario: High-side switch in flyback or active-clamp forward converters operating from 36–60 V input rails.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer primary winding; requires fast turn-off and avalanche ruggedness.

Use Value: 25 A single-pulse avalanche current rating and 31.25 mJ E_AS ensure reliability during output short-circuit events.

DC/DC Converter High-Side

Motor Drive Half-Bridge

Use Scenario: High-side switch in buck or multiphase VRM for FPGA/GPU core voltage regulation (0.8–1.2 V @ 50–100 A).

IC Role / Device Role / Timing Role: Upper transistor in synchronous buck stage; switched at 300–1000 kHz with bootstrap gate drive.

Use Value: 3.85 mΩ R_DS(on) limits I²R loss to <0.1 W at 50 A, supporting >95 % efficiency in high-current point-of-load designs.

Use Scenario: Low-side switch in 24–48 V brushed DC or BLDC motor H-bridge drivers for industrial automation and e-mobility subsystems.

IC Role / Device Role / Timing Role: Ground-referenced N-channel switch carrying bidirectional motor current; subjected to PWM, regenerative braking, and shoot-through stress.

Use Value: 46 ns body diode t_rr and 59.7 A continuous source current rating support efficient freewheeling and regen current handling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR178DP-T1-RE3	R_DS(on) = 4.25 mΩ @ 10 V; Q_g = 20 nC; same PowerPAK SO-8 package and 60 V rating.	Slightly higher conduction loss but lower gate charge - better suited for very high-frequency (>1 MHz) switching where Q_g dominates loss.	Select SiR178DP-T1-RE3 when prioritizing gate drive efficiency over absolute R_DS(on) in resonant or multi-MHz converters.
IRF7470PBF	Standard SO-8 package; R_DS(on) = 4.5 mΩ @ 10 V; R_thJC = 16 °C/W; no 100% UIS test.	Higher thermal resistance limits power handling; unsuitable for sustained >20 A operation without heatsink.	Choose IRF7470PBF only for cost-sensitive, low-power (<10 A) applications where thermal budget allows SO-8 limitations.

Compared with SiR178DP-T1-RE3 and IRF7470PBF, the SIR188DP-T1-RE3 offers the lowest R_DS(on) in the PowerPAK SO-8 family and superior thermal performance - making it optimal for high-current, high-efficiency synchronous rectification and primary-side switching where junction temperature control is critical.

Availability

SIR188DP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, motor drive half-bridges, and 48 V synchronous rectification requiring stable component supply across production lifecycles.

Supply support for SIR188DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR188DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 product line, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current for SIR188DP-T1-RE3 at 70 °C case temperature?

The SIR188DP-T1-RE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (≥0.25 in²) and thermal vias to maintain case temperature - not ambient temperature - at 70 °C. The device's low R_thJC of 1.6 °C/W enables this high current capability without external heatsinking.

Does SIR188DP-T1-RE3 support 5 V gate drive?

Yes, the SIR188DP-T1-RE3 is fully compatible with 5 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.6 V, and R_DS(on) is specified at V_GS = 7.5 V (4.90 mΩ max) - ensuring strong enhancement and low on-resistance even with 5 V logic-level drivers. For optimal performance, 10 V drive yields 3.85 mΩ max R_DS(on).

What is the body diode reverse recovery time (t_rr) of SIR188DP-T1-RE3, and why does it matter?

The SIR188DP-T1-RE3 has a typical body diode reverse recovery time (t_rr) of 46 ns at T_J = 25 °C, IF = 10 A, and di/dt = 100 A/μs. This fast recovery minimizes voltage overshoot and switching loss during commutation in synchronous rectifier and half-bridge configurations - directly improving efficiency and reducing EMI in high-frequency power converters.

Can SIR188DP-T1-RE3 replace a standard SO-8 MOSFET without PCB layout changes?

Yes, the SIR188DP-T1-RE3 uses the PowerPAK SO-8 package with identical 5.15 mm × 6.15 mm footprint and pinout as standard SO-8 - allowing drop-in replacement on existing land patterns. However, to realize its full thermal benefit (R_thJC = 1.6 °C/W), the PCB drain pad should be extended per Vishay Application Note AN826 to maximize copper area and thermal via count beneath the exposed drain pad.

Is SIR188DP-T1-RE3 suitable for automotive applications?

The SIR188DP-T1-RE3 is qualified to AEC-Q101 for discrete MOSFETs and operates across –55 °C to +150 °C junction temperature. Its 100% UIS testing, 60 V V_DS, and robust body diode make it suitable for 12 V/24 V/48 V automotive subsystems - including ADAS power supplies, infotainment DC/DC stages, and electric power steering motor drivers - provided board-level thermal design meets automotive ambient requirements.

SIR188DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 25.5A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.85mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR188DP-T1-RE3 FAQ

1.How can I place an order for SIR188DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR188DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR188DP-T1-RE3 reliable?

The price and inventory of SIR188DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR188DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR188DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR188DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR188DP-T1-RE3?

SIR188DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR188DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR188DP-T1-RE3?

For technical support, including SIR188DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR188DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR188DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR188DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR188DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR188DP-T1-RE3?

All SIR188DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR188DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR188DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR188DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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