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Vishay Siliconix SIR330DP-T1-GE3
- Part No.:
- SIR330DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR330DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,324
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Product details
Overview
SIR330DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized as a high-side switch in synchronous buck converters. It delivers RDS(on) = 5.6 mΩ at VGS = 10 V, 7.5 mΩ at VGS = 4.5 V, supports 35 A continuous drain current (package-limited), and features 100 % Rg and UIS testing for robust power conversion in notebook and server applications.
For engineers reviewing the SIR330DP-T1-GE3 datasheet, SIR330DP-T1-GE3 pinout, SIR330DP-T1-GE3 application, or SIR330DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 11.2 nC total gate charge, PowerPAK® SO-8 thermal performance matching DPAK, and compliance with RoHS and halogen-free standards.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching. Its gate threshold voltage (VGS(th)) ranges from 1.2 V to 2.5 V, enabling reliable turn-on with standard logic-level drivers. The device integrates a body diode with trr = 19.5 ns and Qrr = 10 nC, supporting high-frequency synchronous rectification.
Thermally, it features RthJC = 3.4 °C/W (typ.) and RthJA = 20 °C/W (typ., t ≤ 10 s), enabled by the exposed-drain PowerPAK® SO-8 construction. The package shares footprint and pinout with standard SO-8 but provides lower profile and superior thermal conduction via direct die-attach pad contact to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail systems |
| RDS(on) @ VGS = 10 V | 5.6 mΩ - Enables <1 W conduction loss at 15 A in high-side position |
| RDS(on) @ VGS = 4.5 V | 7.5 mΩ - Supports efficient operation with 5 V or 4.5 V gate drivers without level shifting |
| Qg (total) | 11.2 nC - Low gate charge reduces driver power demand and switching losses at 500 kHz–1 MHz |
| ID (continuous) | 35 A (TC = 25 °C) - Package-limited rating suitable for high-current VRMs |
| Ciss | 1300 pF - Input capacitance impacts gate drive loop stability and Miller effect during hard switching |
| RthJC | 3.4 °C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but featuring an exposed drain paddle for enhanced thermal performance. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires <11.2 nC charge for full enhancement; Rg = 0.75 Ω (max) |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in high-side configuration |
| 3 (S) | Source | Second source connection; paralleled internally to reduce source inductance |
| 4 (S) | Source | Third source connection; improves current sharing and thermal distribution |
| 5 (D) | Drain | Main power output node; electrically and thermally connected to exposed bottom paddle |
| 6 (D) | Drain | Second drain connection; enhances current capacity and thermal spreading |
| 7 (D) | Drain | Third drain connection; supports high pulsed currents up to 70 A |
| 8 (D) | Drain | Fourth drain connection; maximizes copper interface area for PCB heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Enables 5.6 mΩ RDS(on) at 30 V rating, reducing conduction loss vs. planar MOSFETs |
| 100 % Rg tested | Guarantees gate resistance ≤ 1.5 Ω, ensuring consistent turn-on timing across production lots |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 20 A |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| PowerPAK® SO-8 package | Delivers DPAK-equivalent thermal performance (RthJC = 3.4 °C/W) in SO-8 footprint |
Applications
| Server VRM High-Side Switch | Notebook CPU Core Regulator |
|---|---|
Use Scenario: Primary high-side switch in multiphase 30 A+ buck converter supplying Intel/AMD CPU core voltage. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling energy transfer from 12 V input to sub-1 V output; operates at 500 kHz–1 MHz with tight dead-time control. Use Value: 7.5 mΩ RDS(on) at 4.5 V gate drive enables direct compatibility with common PWM controller gate outputs, minimizing BOM count and layout complexity. |
Use Scenario: High-efficiency step-down regulator for GPU or SoC core power in ultrathin notebooks with strict thermal envelope. IC Role / Device Role / Timing Role: High-side synchronous rectifier in compact 2-phase buck; handles peak currents >25 A per phase with minimal temperature rise. Use Value: PowerPAK® SO-8's 3.4 °C/W RthJC allows junction temperature rise of only ~2 °C above PCB temperature at 2.7 W dissipation-critical for fanless thermal design. |
| Industrial DC-DC Module | Telecom Point-of-Load Converter |
Use Scenario: High-reliability 24 V input to 5 V/3.3 V conversion in programmable logic controllers and industrial HMIs. IC Role / Device Role / Timing Role: Main switching element in isolated or non-isolated buck topology; subjected to repetitive surge and thermal cycling. Use Value: 100 % UIS testing ensures survival under worst-case load dump or short-circuit transients common in factory automation environments. |
Use Scenario: Compact, high-density point-of-load regulator on telecom line card supplying FPGA or ASIC rails. IC Role / Device Role / Timing Role: High-frequency (1 MHz) switching transistor requiring low Qg and fast tr/tf to minimize switching loss and EMI. Use Value: 11.2 nC Qg and 12 ns rise time enable clean switching edges and reduced gate driver stress in space-constrained 4-layer boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR332DP-T1-GE3 | Same PowerPAK® SO-8 package; RDS(on) = 4.8 mΩ @ 10 V (lower), Qg = 13.5 nC (higher) | Better conduction loss at high VGS, but higher gate drive requirement | Select when system prioritizes lowest RDS(on) over gate drive efficiency |
| IRF7470PBF | SO-8 package; RDS(on) = 6.5 mΩ @ 10 V; no 100 % UIS test; RthJC = 4.5 °C/W (worse) | Lower cost but reduced ruggedness and thermal performance | Select for cost-sensitive, non-mission-critical applications with margin on thermal design |
Compared with SIR330DP-T1-GE3, SiR332DP-T1-GE3 offers lower conduction loss but demands more gate drive energy, while IRF7470PBF trades verified ruggedness and thermal capability for lower unit cost-making SIR330DP-T1-GE3 the balanced choice for high-reliability, high-frequency synchronous buck designs.
Availability
SIR330DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRMs, and industrial DC-DC modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR330DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiR330DP product line targets high-frequency, high-current DC-DC conversion in computing and communications infrastructure, leveraging TrenchFET® and PowerPAK® technologies to deliver optimal RDS(on)-Qg trade-offs.
FAQ
What is the maximum continuous drain current rating for SIR330DP-T1-GE3?
The SIR330DP-T1-GE3 has a continuous drain current rating of 35 A at TC = 25 °C, limited by package thermal capacity rather than silicon capability. At TC = 70 °C, the rating remains 35 A; at TA = 25 °C (on 1" × 1" FR4 board), it is derated to 22.2 A. This reflects its design as a package-limited high-current switch for VRM applications where case temperature is actively managed.
Does SIR330DP-T1-GE3 support 4.5 V gate drive in synchronous buck topologies?
Yes, the SIR330DP-T1-GE3 is fully specified for 4.5 V gate drive: RDS(on) = 7.5 mΩ (max) at VGS = 4.5 V and ID = 7 A, and VGS(th) is guaranteed between 1.2 V and 2.5 V. This enables direct interfacing with common 5 V or 4.5 V PWM controllers without gate-driving circuitry, making it ideal for high-side use in notebook and server buck converters.
What is the thermal resistance from junction to case (RthJC) for SIR330DP-T1-GE3?
The SIR330DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 3.4 °C/W and a maximum of 4.5 °C/W under steady-state conditions. This value is measured from the silicon junction to the exposed drain paddle, enabling effective heat transfer to PCB copper pours or external heatsinks-matching DPAK-level thermal performance in an SO-8 footprint.
Is SIR330DP-T1-GE3 qualified for lead-free reflow soldering?
Yes, SIR330DP-T1-GE3 is rated for lead-free reflow with a peak temperature of 255 °C (±0 °C tolerance, +5 °C max) for 30 seconds, per JEDEC J-STD-020. The device is marked "-GE3" to indicate lead (Pb)-free and halogen-free construction, and its PowerPAK® SO-8 package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1) handling requirements.
How does the body diode performance of SIR330DP-T1-GE3 impact synchronous rectification?
The SIR330DP-T1-GE3 body diode exhibits trr = 19.5 ns (typ.) and Qrr = 10 nC (typ.) at IF = 10 A and dI/dt = 100 A/µs, enabling clean reverse recovery during synchronous FET commutation. Its low VSD = 0.74 V (typ.) at IS = 3 A reduces shoot-through loss during dead-time, directly improving efficiency in high-frequency buck converters where body diode conduction is brief but critical.
SIR330DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR330DP-T1-GE3 FAQ
1.How can I place an order for SIR330DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR330DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR330DP-T1-GE3 reliable?
The price and inventory of SIR330DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR330DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR330DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR330DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR330DP-T1-GE3?
SIR330DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR330DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR330DP-T1-GE3?
For technical support, including SIR330DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR330DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR330DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR330DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR330DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR330DP-T1-GE3?
All SIR330DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR330DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR330DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR330DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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