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Vishay Siliconix SIR406DP-T1-GE3
- Part No.:
- SIR406DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR406DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,365
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Product details
Overview
SIR406DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering 40 A continuous drain current at TC = 25 °C, RDS(on) of 3.8 mΩ at VGS = 10 V and 4.8 mΩ at VGS = 4.5 V, with 15.8 nC total gate charge - optimized for high-efficiency POL and server DC/DC converters.
For engineers reviewing the SIR406DP-T1-GE3 datasheet, SIR406DP-T1-GE3 pinout, SIR406DP-T1-GE3 application, or SIR406DP-T1-GE3 equivalent, key selection criteria include its lead-free/halogen-free PowerPAK SO-8 footprint, 100 % Rg and avalanche testing, junction-to-case thermal resistance of 2.1 °C/W, and suitability for high-current, low-voltage synchronous rectification in compact power modules.
Technical Context
This MOSFET employs TrenchFET® Gen III silicon technology to achieve ultra-low RDS(on) while maintaining robust avalanche capability (EAS = 45 mJ) and tight gate threshold voltage control (VGS(th) = 1.2–2.4 V). Its dynamic performance includes Ciss = 2083 pF, Crss = 207 pF, and fast switching with td(on) = 11 ns and tf = 9 ns under 10 V drive.
The device operates within -55 °C to +150 °C junction temperature range and features a fully rated 25 V drain-source breakdown voltage with positive VDS temperature coefficient (24 mV/°C), enabling stable parallel operation. Its PowerPAK® SO-8 package provides direct die-to-PCB thermal conduction via exposed copper drain pad, achieving RthJC = 2.1 °C/W - matching DPAK-level thermal performance in SO-8 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 3.3 V, 5 V, and 12 V input rails in point-of-load systems |
| RDS(on) | 3.8 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 16 A, critical for high-current CPU/GPU VRMs |
| ID (continuous) | 40 A @ TC = 25 °C - Package-limited current rating supporting high-density power stages |
| Qg | 15.8 nC @ VGS = 4.5 V - Low gate charge enables efficient drive from standard PWM controllers without external buffers |
| RthJC | 2.1 °C/W - Enables direct thermal coupling to PCB copper, reducing junction temperature rise by ~40 °C vs. standard SO-8 |
| VGS(th) | 1.2–2.4 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers and supports dual-gate control schemes |
| EAS | 45 mJ - Fully tested avalanche energy rating allows safe operation under inductive switching stress in non-synchronous topologies |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, featuring exposed copper drain pad on bottom for enhanced thermal transfer. The package uses trench-based silicon for low RDS(on) and high current density.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to exposed bottom copper pad - provides low-inductance, high-current path to PCB ground plane |
| 5 | Gate (G) | Single gate input with Rg = 0.2–1.7 Ω - supports fast, controlled switching with minimal gate ringing |
| 6, 7, 8 | Source (S) | Three parallel source terminals - reduces source inductance and improves current sharing in paralleled configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Delivers 3.8 mΩ RDS(on) at 10 V in SO-8 footprint - 40 % lower on-resistance than prior-generation equivalents |
| 100 % Rg tested | Guarantees consistent gate drive timing across production lots, eliminating need for gate resistor tuning in high-volume designs |
| 100 % avalanche tested | Validates EAS = 45 mJ per unit - ensures reliability in hard-switched or fault-prone DC/DC stages without derating |
| PowerPAK® SO-8 package | Enables drop-in replacement for SO-8 layouts while delivering DPAK-level thermal performance (RthJC = 2.1 °C/W) |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated server and telecom equipment |
Applications
| Server Voltage Regulator Modules | High-Density POL Converters |
|---|---|
Use Scenario: Primary synchronous rectifier in 48 V to 12 V intermediate bus converter feeding multiple CPU/GPU VRMs in rack-mounted servers. IC Role / Device Role / Timing Role: High-side or low-side switch operating at 300–600 kHz with 40 A peak current, driven by integrated gate driver ICs. Use Value: 3.8 mΩ RDS(on) limits conduction loss to ≤0.6 W at full load, while PowerPAK SO-8's 2.1 °C/W RthJC maintains TJ < 115 °C on 2 oz copper board. | Use Scenario: Output synchronous rectifier in compact 12 V to 1.8 V buck converter powering FPGA or ASIC core logic on embedded compute cards. IC Role / Device Role / Timing Role: Low-side switch in multiphase topology, switching at 1 MHz with 15 A RMS current per phase. Use Value: 4.8 mΩ RDS(on) at 4.5 V gate drive enables direct control from 3.3 V PWM controller, eliminating level-shifter complexity and layout area. |
| Telecom DC/DC Brick Modules | Industrial PLC Power Supplies |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V input, 5 V/20 A output brick supplying baseband processing units. IC Role / Device Role / Timing Role: Fast-recovery body diode operation during dead-time, with 0.73 V VSD ensuring low reverse recovery loss. Use Value: Qrr = 15–28 nC and trr = 24–45 ns minimize switching loss during light-load ZVS transitions, improving efficiency at 10–25 % load. | Use Scenario: Input-side hot-swap FET and OR-ing diode replacement in redundant 24 V power distribution for programmable logic controllers. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used in ideal diode configuration with external controller. Use Value: 40 A continuous ID and 70 A pulsed IDM support inrush current limiting and fault isolation without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR404DP-T1-GE3 | Same PowerPAK SO-8 package, but 30 V VDS and 4.5 mΩ RDS(on) @ 10 V | Better suited for 3.3 V/5 V input rails where 25 V rating is excessive; slightly higher conduction loss | Select when system VDS stress remains <22 V and cost optimization is prioritized over lowest RDS(on) |
| SiR626DP-T1-GE3 | Same 25 V rating, but 2.8 mΩ RDS(on) @ 10 V and 22.5 nC Qg in identical package | Higher gate charge increases driver loss; preferred only when sub-3 mΩ RDS(on) justifies added gate drive complexity | Choose only when conduction loss dominates total loss budget and gate driver can support 22.5 nC charge |
Compared with SIR406DP-T1-GE3, SiR404DP-T1-GE3 trades 0.7 mΩ higher RDS(on) for broader voltage margin and lower cost, while SiR626DP-T1-GE3 delivers 1.0 mΩ lower RDS(on) at the expense of 42 % higher Qg - making SIR406DP-T1-GE3 the optimal balance of conduction efficiency, switching speed, and drive simplicity for 25 V POL applications.
Availability
SIR406DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC bricks, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SIR406DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR406DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III PowerPAK® SO-8 family, engineered specifically for high-current, low-voltage DC/DC conversion in space-constrained computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SIR406DP-T1-GE3 at 70 °C case temperature?
The SIR406DP-T1-GE3 is rated for 40 A continuous drain current at TC = 25 °C and TC = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with footnote "g. Package Limited." This reflects its thermal design - the PowerPAK® SO-8 package constrains current based on package construction rather than silicon limits, enabling consistent 40 A delivery across that temperature range when properly heatsinked.
Does SIR406DP-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, SIR406DP-T1-GE3 supports robust operation with 3.3 V gate drive due to its VGS(th) range of 1.2–2.4 V and RDS(on) = 4.8 mΩ at VGS = 4.5 V. At 3.3 V, typical RDS(on) is ~6.2 mΩ (extrapolated from published curves), enabling use with 3.3 V logic-level controllers in low-duty-cycle or moderate-current POL stages - though full 40 A capability requires ≥4.5 V drive per datasheet conditions.
What is the significance of "100 % Rg tested" for SIR406DP-T1-GE3?
"100 % Rg tested" means every SIR406DP-T1-GE3 unit undergoes production screening for gate resistance (Rg = 0.2–1.7 Ω), ensuring tight parametric control of switching speed and gate drive current requirements. This eliminates lot-to-lot variation in turn-on/turn-off timing, simplifies gate driver selection, and prevents unexpected oscillation or shoot-through in high-frequency synchronous buck converters using SIR406DP-T1-GE3.
Can SIR406DP-T1-GE3 be mounted on a standard SO-8 land pattern?
Yes, SIR406DP-T1-GE3 uses the exact same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, allowing direct mounting on legacy SO-8 PCBs. However, optimal thermal performance requires extending the drain pad copper area beyond the minimum SO-8 land pattern - Vishay recommends ≥0.25 in² additional spreading copper to realize the full RthJC = 2.1 °C/W benefit of the PowerPAK® SO-8 package.
What is the body diode forward voltage (VSD) of SIR406DP-T1-GE3 at 3 A current?
The body diode forward voltage VSD of SIR406DP-T1-GE3 is specified as 0.73–1.1 V at IS = 3 A and TJ = 25 °C. This low VSD, combined with trr = 24–45 ns and Qrr = 15–28 nC, makes SIR406DP-T1-GE3 well-suited for synchronous rectification and bidirectional current applications where body diode conduction occurs during dead-time or fault conditions.
SIR406DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2083 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR406DP-T1-GE3 FAQ
1.How can I place an order for SIR406DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR406DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR406DP-T1-GE3 reliable?
The price and inventory of SIR406DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR406DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR406DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR406DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR406DP-T1-GE3?
SIR406DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR406DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR406DP-T1-GE3?
For technical support, including SIR406DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR406DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR406DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR406DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR406DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR406DP-T1-GE3?
All SIR406DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR406DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR406DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR406DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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