My Inquiry
My Account
Vishay Siliconix SIR408DP-T1-GE3
- Part No.:
- SIR408DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR408DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,422
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR408DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 50 A continuous drain current at TC = 25 °C, RDS(on) of 6.3 mΩ at VGS = 10 V and 8.0 mΩ at VGS = 4.5 V, with 9.3 nC total gate charge - optimized for high-side DC/DC converter switching in server power delivery.
For engineers reviewing the SIR408DP-T1-GE3 datasheet, SIR408DP-T1-GE3 pinout, SIR408DP-T1-GE3 application, or SIR408DP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V drive, 100 % UIS and Rg testing, halogen-free and RoHS-compliant construction, and thermal resistance RthJC = 2.4 °C/W for high-efficiency POL designs.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio. Its gate threshold voltage (1–2.5 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity under transient conditions.
The device integrates a body diode with 0.75–1.2 V forward voltage at 4 A and 26–50 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - supports input rails up to 24 V systems with margin for transients |
| RDS(on) | 6.3 mΩ @ VGS = 10 V - enables <1 W conduction loss at 40 A in high-current POL stages |
| ID (Cont.) | 50 A @ TC = 25 °C - package-limited current rating for thermally anchored PCB layouts |
| Qg | 9.3 nC @ VGS = 4.5 V - ensures fast turn-on with low driver power demand in 5 V control environments |
| RthJC | 2.4 °C/W - allows direct heatsink attachment to drain pad for >30 W steady-state dissipation |
| VGS(th) | 1–2.5 V - guarantees reliable enhancement-mode turn-on with standard logic-level gate drivers |
| Ciss | 1230 pF @ VDS = 15 V - defines Miller capacitance impact on gate drive loop stability |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed drain copper on the bottom side; dimensions 6.15 mm × 5.15 mm. Drain terminals occupy pins 5–8; source occupies pins 1–3; gate is pin 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Common return path for channel current; electrically tied to internal source metallization |
| 4 (G) | Gate | Control terminal; requires ≤±20 V bias; 0.8–1.6 Ω gate resistance affects switching speed |
| 5, 6, 7, 8 (D) | Drain | High-current output node; thermally connected to exposed copper pad for heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 6.3 mΩ RDS(on) at 10 V and 8.0 mΩ at 4.5 V in compact SO-8 footprint |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress without external snubbers |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated deployments |
| Exposed drain thermal pad | Provides 2.4 °C/W junction-to-case path for direct board-level heatsinking |
| Low Qgd/Qg ratio | Reduces Miller-induced switching delay and improves controllability in high-frequency DC/DC |
Applications
| Server VRM | POL Converter |
|---|---|
Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers with tight thermal constraints. IC Role / Device Role / Timing Role: High-side synchronous switch in multiphase buck converter topology operating at 300–600 kHz. Use Value: 6.3 mΩ RDS(on) minimizes conduction loss; 9.3 nC Qg enables efficient 5 V gate drive with minimal driver IC power draw. | Use Scenario: Compact 12 V input to 0.8–3.3 V output DC/DC module for FPGA or ASIC power domains. IC Role / Device Role / Timing Role: Primary high-side power switch in integrated power stage modules with integrated driver and inductor. Use Value: 4.5 V RDS(on) rating ensures full enhancement with common controller IC outputs; exposed drain pad simplifies thermal design. |
| DC/DC High Side | Industrial Power Supply |
Use Scenario: High-efficiency isolated or non-isolated step-down conversion in telecom rectifiers and base station power units. IC Role / Device Role / Timing Role: Main switching element in primary-side synchronous rectifier or secondary-side high-side switch. Use Value: 100 % UIS testing ensures reliability during load dump or short-circuit events; 25 V rating matches 24 V nominal bus architectures. | Use Scenario: Robust 24 V input power conversion for programmable logic controllers and motor drives requiring long service life. IC Role / Device Role / Timing Role: High-current switching transistor in industrial-grade DC/DC converters with extended temperature operation. Use Value: -55 to +150 °C operating range and halogen-free construction meet industrial environmental compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242PBF | RDS(on) = 5.2 mΩ @ 10 V, but only 4.5 mΩ @ 4.5 V; Qg = 12.5 nC; same PowerSO-8 package | Lower RDS(on) at 4.5 V improves efficiency in 5 V gate-drive systems; higher Qg increases driver loss | Prefer when lowest possible 4.5 V on-resistance is critical and driver capability permits higher Qg |
| DMN3029LSD-13 | RDS(on) = 3.0 mΩ @ 10 V, 4.2 mΩ @ 4.5 V; Qg = 10.5 nC; SO-8 package with gull-wing leads | Lead-based SO-8 offers easier rework vs. leadless PowerPAK; slightly lower RDS(on) but larger footprint | Choose when manual rework or mixed-technology assembly is required, and space allows gull-wing layout |
Compared with IRLHS6242PBF and DMN3029LSD-13, the SIR408DP-T1-GE3 provides best-in-class thermal resistance (RthJC = 2.4 °C/W), halogen-free compliance, and validated UIS ruggedness - making it optimal for high-reliability server and telecom POL where thermal density and transient immunity are prioritized over marginal RDS(on) reduction.
Availability
SIR408DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, POL converters, and DC/DC high-side switching applications requiring stable component supply, halogen-free compliance, and high-current thermal performance.
Supply support for SIR408DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on reliability and performance.
The SiR408DP product line targets high-efficiency, high-density DC/DC conversion in datacenter and telecom infrastructure, emphasizing low RDS(on), fast switching, and ruggedness in compact leadless packages.
FAQ
What is the maximum continuous drain current rating for SIR408DP-T1-GE3 at 70 °C case temperature?
The SIR408DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal vias to maintain case temperature at or below 70 °C under steady-state operation.
Does SIR408DP-T1-GE3 require a gate resistor for safe operation in a 500 kHz buck converter?
Yes - the SIR408DP-T1-GE3 gate resistance is 0.8–1.6 Ω, but external gate resistance is recommended to dampen ringing and control dV/dt. For 500 kHz operation, a 2–5 Ω series resistor balances switching speed and EMI; values depend on driver strength and layout parasitics per the SIR408DP-T1-GE3 application notes.
Is SIR408DP-T1-GE3 suitable for synchronous rectification in a 12 V to 1.2 V buck converter?
Yes - the SIR408DP-T1-GE3 body diode has VSD = 0.75–1.2 V at 4 A and trr = 26–50 ns, enabling effective synchronous rectification. Its 8.0 mΩ RDS(on) at 4.5 V ensures low conduction loss when used as low-side switch driven by dedicated gate control in SIR408DP-T1-GE3-based buck stages.
What is the thermal resistance from junction to ambient for SIR408DP-T1-GE3 on a standard 1" x 1" FR4 board?
On a 1" x 1" FR4 board, the SIR408DP-T1-GE3 has RthJA = 21–26 °C/W (typical to maximum), per the Thermal Resistance Ratings table. This value assumes no additional heatsinking; actual performance depends on copper area, thickness, and via count beneath the exposed drain pad.
Can SIR408DP-T1-GE3 be reworked using hot air without damage?
No - Vishay explicitly states that manual soldering with a soldering iron is not recommended for the PowerPAK® SO-8 package, and rework must follow JEDEC J-STD-020 moisture sensitivity and peak temperature profiles. The SIR408DP-T1-GE3 requires controlled hot-air reflow with preheat, soak, and ramp rates aligned to its MSL3 classification and 260 °C peak limit.
SIR408DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1230 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 44.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR408DP-T1-GE3 FAQ
1.How can I place an order for SIR408DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR408DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR408DP-T1-GE3 reliable?
The price and inventory of SIR408DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR408DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR408DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR408DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR408DP-T1-GE3?
SIR408DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR408DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR408DP-T1-GE3?
For technical support, including SIR408DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR408DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR408DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR408DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR408DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR408DP-T1-GE3?
All SIR408DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR408DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR408DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR408DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR408DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
