Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR412DP-T1-GE3

Name: SIR412DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR412DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR412DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR412DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 20A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,521

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR412DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in server/desktop power supplies. It delivers R_DS(on) = 0.012 Ω at V_GS = 10 V, 20 A continuous drain current (T_J = 150 °C), 4.9 nC total gate charge, and 100 % UIS tested reliability.

For engineers reviewing the SIR412DP-T1-GE3 datasheet, SIR412DP-T1-GE3 pinout, SIR412DP-T1-GE3 application, or SIR412DP-T1-GE3 equivalent, key selection criteria include its low thermal resistance (R_thJC = 6.4 °C/W), halogen-free and RoHS-compliant construction, and validated performance in high-frequency, high-efficiency DC-DC converters requiring stable on-resistance over temperature.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 4.9 nC (at V_GS = 4.5 V) and t_f = 8–15 ns. Its gate threshold voltage (V_GS(th) = 1.2–2.5 V) supports 4.5-V logic-level drive, and it features a robust body diode with t_rr = 13–60 ns and Q_rr = 5–44 nC.

The device is thermally optimized via exposed-drain PowerPAK SO-8 packaging-identical footprint to standard SO-8 but with direct die-to-PCB thermal path-enabling junction-to-case thermal resistance of 6.4 °C/W and steady-state power dissipation up to 15.6 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on)	0.012 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 10 A in high-side switch position
I_D (continuous)	20 A @ T_J = 150 °C - Supports high-current synchronous rectification without derating at case temp ≤70 °C
Q_g	4.9 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables >1 MHz switching in VRMs
R_thJC	6.4 °C/W - Enables efficient heat transfer to PCB copper, matching DPAK thermal performance in SO-8 footprint
V_GS(th)	1.2–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers in digital power controllers
E_AS	11.25 mJ - Withstands single-pulse inductive energy in hard-switched topologies without failure

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 1.07 mm profile, identical footprint and pinout to standard SO-8. The exposed drain pad provides low-inductance, high-current conduction and direct thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals connected to exposed bottom pad - carries full load current and serves as primary thermal interface
5	Gate (G)	Control input - low C_iss (600 pF) and R_g (0.6–5.4 Ω) enable fast, low-loss switching
6, 7, 8	Source (S)	Three parallel source terminals - minimizes source inductance for stable high-frequency operation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency synchronous rectification
Optimized for high-side operation	Body diode recovery (t_rr = 13 ns typ.) and low Q_rr reduce shoot-through risk and reverse recovery losses
100 % R_g tested	Guarantees consistent gate drive timing and eliminates batch variation in switching speed
100 % UIS tested	Validates ruggedness against unclamped inductive switching stress in real-world power converter faults
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated server/desktop deployments

Applications

Server VRM High-Side Switch	Desktop CPU Power Stage
Use Scenario: Primary high-side switch in multiphase buck converters supplying 0.8–1.5 V to Intel/AMD CPUs. IC Role / Device Role / Timing Role: Synchronous rectifier controlling power delivery during high-duty-cycle phases; switches at 300–1000 kHz. Use Value: Low R_DS(on) (0.012 Ω) and Q_g (4.9 nC) minimize conduction + switching losses, enabling >95 % efficiency at 100 A output.	Use Scenario: High-current phase-leg switch in compact ATX PSUs delivering 12 V to motherboard VRMs. IC Role / Device Role / Timing Role: High-side MOSFET in dual-MOSFET power stage; operates with 4.5 V gate drive from PWM controller. Use Value: V_GS(th) range (1.2–2.5 V) ensures clean turn-on with logic-level drivers; 20 A rating supports peak loads up to 150 W per phase.
GPU Power Delivery Module	High-Density DC-DC Converter
Use Scenario: Input-side switch in 48 V–12 V intermediate bus converter powering discrete graphics cards. IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 500 kHz with tight dead-time control. Use Value: Fast t_f (8–15 ns) and low C_oss (180 pF) reduce switching transition losses and EMI generation in dense layouts.	Use Scenario: Compact point-of-load regulator in network switch line cards requiring minimal board area. IC Role / Device Role / Timing Role: High-side switch in 12 V–3.3 V buck converter; mounted on 1" × 1" FR4 with 2 oz copper. Use Value: R_thJA = 27 °C/W (t ≤ 10 s) enables 3.9 W ambient-rated power without heatsink-critical for fanless designs.

Server VRM High-Side Switch

Desktop CPU Power Stage

Use Scenario: Primary high-side switch in multiphase buck converters supplying 0.8–1.5 V to Intel/AMD CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier controlling power delivery during high-duty-cycle phases; switches at 300–1000 kHz.

Use Value: Low R_DS(on) (0.012 Ω) and Q_g (4.9 nC) minimize conduction + switching losses, enabling >95 % efficiency at 100 A output.

Use Scenario: High-current phase-leg switch in compact ATX PSUs delivering 12 V to motherboard VRMs.

IC Role / Device Role / Timing Role: High-side MOSFET in dual-MOSFET power stage; operates with 4.5 V gate drive from PWM controller.

Use Value: V_GS(th) range (1.2–2.5 V) ensures clean turn-on with logic-level drivers; 20 A rating supports peak loads up to 150 W per phase.

GPU Power Delivery Module

High-Density DC-DC Converter

Use Scenario: Input-side switch in 48 V–12 V intermediate bus converter powering discrete graphics cards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 500 kHz with tight dead-time control.

Use Value: Fast t_f (8–15 ns) and low C_oss (180 pF) reduce switching transition losses and EMI generation in dense layouts.

Use Scenario: Compact point-of-load regulator in network switch line cards requiring minimal board area.

IC Role / Device Role / Timing Role: High-side switch in 12 V–3.3 V buck converter; mounted on 1" × 1" FR4 with 2 oz copper.

Use Value: R_thJA = 27 °C/W (t ≤ 10 s) enables 3.9 W ambient-rated power without heatsink-critical for fanless designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR412DP-T1-RE3	Same die and specs; differs only in reel packaging (3,000 pcs/reel vs. 1,000 pcs/reel for GE3)	No functional difference; RE3 used for high-volume automated assembly	Select RE3 for production runs ≥50k units; GE3 preferred for prototyping and low-volume builds
SiR422DP-T1-GE3	Higher R_DS(on) (0.015 Ω @ 10 V), same package and pinout; 25 V rating unchanged	Suitable where marginally higher conduction loss is acceptable for cost-sensitive designs	Choose SiR422DP-T1-GE3 only if thermal budget allows +25 % R_DS(on) rise; not drop-in for thermally constrained layouts

Compared with SiR422DP-T1-GE3, SIR412DP-T1-GE3 delivers 20 % lower conduction loss at 10 A and superior thermal headroom due to lower R_thJC; versus SiR412DP-T1-RE3, it offers identical electrical performance with smaller reel size for flexible inventory management.

Availability

SIR412DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, desktop CPU power stages, and GPU power delivery modules requiring stable component supply, halogen-free compliance, and validated high-frequency switching performance.

Supply support for SIR412DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiR412DP product line targets high-efficiency, high-density DC-DC conversion in computing infrastructure, emphasizing low R_DS(on), fast switching, and thermal robustness in space-constrained PowerPAK SO-8 packaging.

FAQ

What is the maximum continuous drain current rating for SIR412DP-T1-GE3 at 70 °C case temperature?

The SIR412DP-T1-GE3 supports 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with footnote g. This rating assumes proper PCB thermal design using the recommended PowerPAK SO-8 land pattern with spreading copper.

Does SIR412DP-T1-GE3 support 4.5 V gate drive in high-side synchronous rectifier applications?

Yes, SIR412DP-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 0.015 Ω (max) at V_GS = 4.5 V and I_D = 8 A, and Q_g = 4.9 nC (typ) at the same condition. Its V_GS(th) range (1.2–2.5 V) ensures reliable enhancement-mode turn-on with standard 4.5 V logic-level controllers.

What is the thermal resistance from junction to case (R_thJC) for SIR412DP-T1-GE3, and how is it measured?

The SIR412DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 6.4 °C/W under steady-state conditions, with a maximum of 8.0 °C/W. This value is measured with the device mounted on an infinite heat sink, per JEDEC JESD51-1, and reflects the thermal path from silicon die to the exposed drain pad-critical for PCB-level thermal design.

Is SIR412DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SIR412DP-T1-GE3 uses the PowerPAK SO-8 package, which maintains identical footprint, dimensions, and pinout to the standard SO-8. Pin 1–4 are drain, pin 5 is gate, and pins 6–8 are source-enabling direct replacement on existing SO-8 land patterns without layout changes.

What avalanche energy rating does SIR412DP-T1-GE3 have, and under what test conditions?

SIR412DP-T1-GE3 is rated for 11.25 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating validates its ability to withstand unclamped inductive switching events in buck converter high-side operation without degradation.

SIR412DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR412DP-T1-GE3 FAQ

1.How can I place an order for SIR412DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR412DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR412DP-T1-GE3 reliable?

The price and inventory of SIR412DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR412DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR412DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR412DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR412DP-T1-GE3?

SIR412DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR412DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR412DP-T1-GE3?

For technical support, including SIR412DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR412DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR412DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR412DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR412DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR412DP-T1-GE3?

All SIR412DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR412DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR412DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR412DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …