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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR418DP-T1-GE3

Name: SIR418DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR418DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR418DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR418DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 40A PPAK SO-8

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Product details

Overview

SIR418DP-T1-GE3 from Vishay Siliconix is an N-channel 40-V PowerPAK® SO-8 MOSFET optimized for high-efficiency DC/DC conversion, with R_DS(on) = 5.0 mΩ at V_GS = 10 V, Q_g = 24 nC (at 4.5 V), and 100 % UIS tested. It delivers 40 A continuous drain current at T_C = 25 °C and operates in industrial power supplies where low conduction loss and fast switching are critical.

For engineers reviewing the SIR418DP-T1-GE3 datasheet, SIR418DP-T1-GE3 pinout, SIR418DP-T1-GE3 application, or SIR418DP-T1-GE3 equivalent, this page provides verified package mapping, thermal resistance data (R_thJC = 2.1 °C/W), body diode recovery metrics (t_rr = 24 ns), and validated alternatives for synchronous buck and OR-ing designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low Q_g/R_DS(on) ratio, enabling high-frequency operation in synchronous rectification stages. Its gate threshold voltage (V_GS(th) = 1.1–2.4 V) supports 4.5 V logic-level drive, and its 100 % R_g testing ensures consistent turn-on timing across production lots.

The PowerPAK® SO-8 package features exposed drain pads on the bottom side for direct thermal coupling to PCB copper, delivering DPAK-equivalent junction-to-case thermal resistance (2.1 °C/W) while maintaining SO-8 footprint compatibility. The device's 371 pF C_oss and 141 pF C_rss support stable operation under hard-switching conditions up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on)	5.0 mΩ at V_GS = 10 V - Enables ≤ 2 W conduction loss at 20 A in high-current POL converters
Q_g	24 nC at V_GS = 4.5 V - Supports efficient 500 kHz–1 MHz switching with low gate drive power
I_D (cont.)	40 A at T_C = 25 °C - Sustains full load in compact 1" × 1" FR4 board layouts without forced air
R_thJC	2.1 °C/W - Enables direct thermal path to heatsink or internal copper planes, matching DPAK performance
t_rr	24 ns - Minimizes reverse recovery loss in synchronous buck high-side switching
V_SD	0.71 V at I_S = 4 A - Low forward drop improves efficiency in OR-ing and hot-swap applications

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical in footprint and pinout to standard SO-8 but featuring exposed copper drain pads on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <2.4 V threshold to initiate conduction; R_g = 0.2–1.4 Ω ensures predictable switching speed
2 (S)	Source	Reference node for gate drive; tied to power ground plane; carries full load current in low-side configuration
3 (S)	Source	Second source connection; reduces source inductance and improves current sharing in high-di/dt applications
4 (G)	Gate	Redundant gate terminal; electrically identical to Pin 1; used for Kelvin gate sensing or parallel drive routing
5 (D)	Drain	Main power output node; connected to exposed bottom copper pad; handles 40 A continuous current
6 (D)	Drain	Secondary drain terminal; shares current with Pin 5; lowers effective R_DS(on) and thermal resistance
7 (D)	Drain	Third drain terminal; part of multi-terminal drain structure enhancing thermal dissipation and current capacity
8 (D)	Drain	Fourth drain terminal; completes symmetric drain layout; enables uniform current distribution across PCB copper area

Key Features

Feature	Design Value
Q_g-optimized design	24 nC at 4.5 V enables <20 ns rise time with 1 Ω gate resistor, reducing switching loss in 1 MHz converters
100 % UIS tested	Guarantees ruggedness against inductive load transients up to 30 A avalanche current (I_AS)
100 % R_g tested	Ensures gate resistance between 0.2–1.4 Ω, critical for matched timing in paralleled MOSFET configurations
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and telecom systems
Exposed drain thermal pad	Bottom-side copper enables 2.1 °C/W R_thJC, allowing >39 W power dissipation at T_C = 25 °C

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 120 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; switched at 500 kHz–1 MHz with precise dead-time control to minimize shoot-through. Use Value: 5.0 mΩ R_DS(on) limits conduction loss to <2.0 W at 20 A, while 24 ns t_rr prevents body diode cross-conduction loss during transition.	Use Scenario: 48 V-to-12 V isolated DC/DC module for factory automation controllers requiring high reliability over temperature. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology; operated with adaptive gate timing to track zero-voltage switching points. Use Value: 100 % UIS testing ensures survival during line transients; 2.1 °C/W R_thJC maintains T_J < 125 °C under full load on 2-oz copper PCB.
Hot-Swap OR-ing Circuit	Telecom Power Shelf
Use Scenario: Redundant 12 V input OR-ing network in modular power system, where back-to-back MOSFETs prevent reverse current flow. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET; body diode blocks reverse current until gate is actively driven. Use Value: 0.71 V V_SD minimizes forward drop during startup; 35 A I_S rating supports inrush current limiting without external diodes.	Use Scenario: Primary-side switch in 3 kW telecom rectifier shelf operating at 92 % efficiency with forced-air cooling. IC Role / Device Role / Timing Role: High-side switch in interleaved PFC stage; driven by isolated gate driver with 10 V gate bias. Use Value: 40 V V_DS withstands 30 V bus ripple; 75 nC max Q_g ensures <100 ns turn-off delay even at elevated temperature.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 120 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; switched at 500 kHz–1 MHz with precise dead-time control to minimize shoot-through.

Use Value: 5.0 mΩ R_DS(on) limits conduction loss to <2.0 W at 20 A, while 24 ns t_rr prevents body diode cross-conduction loss during transition.

Use Scenario: 48 V-to-12 V isolated DC/DC module for factory automation controllers requiring high reliability over temperature.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology; operated with adaptive gate timing to track zero-voltage switching points.

Use Value: 100 % UIS testing ensures survival during line transients; 2.1 °C/W R_thJC maintains T_J < 125 °C under full load on 2-oz copper PCB.

Hot-Swap OR-ing Circuit

Telecom Power Shelf

Use Scenario: Redundant 12 V input OR-ing network in modular power system, where back-to-back MOSFETs prevent reverse current flow.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET; body diode blocks reverse current until gate is actively driven.

Use Value: 0.71 V V_SD minimizes forward drop during startup; 35 A I_S rating supports inrush current limiting without external diodes.

Use Scenario: Primary-side switch in 3 kW telecom rectifier shelf operating at 92 % efficiency with forced-air cooling.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC stage; driven by isolated gate driver with 10 V gate bias.

Use Value: 40 V V_DS withstands 30 V bus ripple; 75 nC max Q_g ensures <100 ns turn-off delay even at elevated temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR416DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 22 nC @ 4.5 V; same PowerPAK SO-8 package	Better conduction loss at high current; slightly lower gate charge enables faster switching	Select when optimizing for <10 mΩ target R_DS(on) at 10 V drive and minimal gate drive loss
IRF7470PBF	SO-8 package; R_DS(on) = 5.5 mΩ @ 10 V; C_oss = 420 pF; no 100 % R_g test	Higher thermal resistance (R_thJC = 3.5 °C/W); less suitable for high-power density layouts	Acceptable for cost-sensitive, lower-current (<15 A) applications where thermal margin is available

Compared with SIR418DP-T1-GE3, SiR416DP-T1-GE3 offers lower R_DS(on) and gate charge for improved efficiency at high frequency, while IRF7470PBF trades thermal performance and gate consistency for legacy SO-8 compatibility and lower unit cost.

Availability

SIR418DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, hot-swap OR-ing circuits, and telecom power shelves requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SIR418DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiR418DP product line targets high-efficiency, high-density power conversion systems, with emphasis on low R_DS(on), fast switching, and robust thermal packaging for server, telecom, and industrial applications.

FAQ

What is the maximum continuous drain current rating for SIR418DP-T1-GE3 at 70 °C case temperature?

The SIR418DP-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal capability rather than die saturation, and remains unchanged from its 25 °C rating due to the PowerPAK® SO-8's low R_thJC (2.1 °C/W) and efficient heat spreading to PCB copper.

Does SIR418DP-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SIR418DP-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 6.0 mΩ (max) at V_GS = 4.5 V and I_D = 15 A, and total gate charge is 24 nC (typ). Its V_GS(th) range (1.1–2.4 V) ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level drivers, making it suitable for synchronous buck controllers without level-shifting.

How does the PowerPAK® SO-8 package of SIR418DP-T1-GE3 improve thermal performance versus standard SO-8?

The SIR418DP-T1-GE3's PowerPAK® SO-8 package achieves R_thJC = 2.1 °C/W - matching DPAK performance - by exposing the drain pad on the bottom surface for direct thermal contact with PCB copper. In contrast, standard SO-8 packages exhibit R_thJC ≈ 16 °C/W due to internal leadframe limitations. This allows SIR418DP-T1-GE3 to dissipate 39 W at T_C = 25 °C, versus ~5 W for equivalent SO-8 devices.

Is SIR418DP-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SIR418DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested per JEDEC JESD24-1, with rated single-pulse avalanche energy E_AS = 45 mJ and avalanche current I_AS = 30 A (L = 0.1 mH). This validation ensures robustness against transient voltage spikes in motor drives, solenoid controls, and flyback converters where inductive kickback occurs.

What is the body diode reverse recovery time (t_rr) of SIR418DP-T1-GE3, and why does it matter?

The SIR418DP-T1-GE3 has t_rr = 24 ns (typ) at I_F = 10 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery minimizes reverse recovery charge (Q_rr = 15–30 nC), reducing switching loss and voltage overshoot during synchronous rectification transitions - especially critical in high-frequency (>500 kHz) buck converters where body diode conduction occurs during dead time.

SIR418DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR418DP-T1-GE3 FAQ

1.How can I place an order for SIR418DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR418DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR418DP-T1-GE3 reliable?

The price and inventory of SIR418DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR418DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR418DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR418DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR418DP-T1-GE3?

SIR418DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR418DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR418DP-T1-GE3?

For technical support, including SIR418DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR418DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR418DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR418DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR418DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR418DP-T1-GE3?

All SIR418DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR418DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR418DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR418DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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