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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR432DP-T1-GE3

Name: SIR432DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR432DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR432DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR432DP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 28.4A PPAK SO-8

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Product details

Overview

SIR432DP-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering R_DS(on) = 0.0306 Ω at V_GS = 10 V, 28.4 A continuous drain current (T_C = 25 °C), and 15.5 nC total gate charge - optimized for primary-side switching in offline AC-DC power supplies.

For engineers reviewing the SIR432DP-T1-GE3 datasheet, SIR432DP-T1-GE3 pinout, SIR432DP-T1-GE3 application, or SIR432DP-T1-GE3 equivalent, key selection criteria include its 100-V V_DS, low R_DS(on) with 7.5 V/10 V drive compatibility, robust UIS and avalanche ratings (E_AS = 14.5 mJ, I_AS = 17 A), and halogen-free, RoHS-compliant construction.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high cell density and low on-resistance while maintaining fast switching performance. Its gate charge profile (Q_g = 15.5 nC @ 7.5 V) and low Cr_ss (45 pF) support efficient hard-switching operation in flyback and LLC resonant converters.

The device features 100 % R_g and 100 % UIS testing per unit, with a maximum junction-to-case thermal resistance of 2.3 °C/W enabling high-power-density layouts. The PowerPAK SO-8 package provides enhanced thermal performance over standard SO-8 via exposed-drain copper pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in universal-input (85–265 VAC) offline SMPS without derating.
R_DS(on)	0.0306 Ω @ V_GS = 10 V - enables <2.5 W conduction loss at 8.6 A, critical for high-efficiency adapters.
I_D (continuous)	28.4 A @ T_C = 25 °C - supports >30 W output power in compact, thermally constrained designs.
Q_g	15.5 nC @ V_GS = 7.5 V - balances switching speed and gate driver loss in 65–100 kHz flyback topologies.
E_AS	14.5 mJ - ensures reliable operation under inductive load switching and transformer leakage energy absorption.
R_thJC	2.3 °C/W max - allows direct heatsinking to PCB copper or metal-core board for thermal management.

Pinout & Package

Package: PowerPAK SO-8 - leadless surface-mount package with exposed drain pad on bottom side for enhanced thermal dissipation; requires controlled reflow per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Low-side reference node; connects to power ground plane and source of synchronous rectifier in secondary side.
2 (S)	Source	Parallel source connection for reduced package inductance and improved current sharing.
3 (G)	Gate	Control input; driven by PWM controller IC; low R_g (0.2–1.8 Ω) minimizes ringing and EMI.
4 (S)	Source	Third source terminal; lowers source inductance and improves stability in high-dI/dt switching.
5–8 (D)	Drain	High-voltage power node; all four pins tied internally to exposed copper drain pad for thermal and electrical conduction.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 30.6 mΩ R_DS(on) in PowerPAK SO-8 footprint - 35 % lower on-resistance than comparable planar MOSFETs.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress in transformer-coupled topologies.
Exposed drain pad	Reduces R_thJC to 2.3 °C/W - improves thermal transfer to PCB copper, enabling higher power density.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance in global end equipment.

Applications

AC-DC Adapter Primary Switch	Flyback Converter Main Switch
Use Scenario: 24 W universal-input (85–265 VAC) wall adapter powering IoT sensors. IC Role / Device Role / Timing Role: High-side N-channel switch controlling primary winding current in discontinuous conduction mode (DCM) flyback. Use Value: Low Q_g (15.5 nC) and R_DS(on) (30.6 mΩ) reduce both switching and conduction losses, achieving >88 % efficiency at full load.	Use Scenario: 45 W laptop charger with active clamp flyback architecture. IC Role / Device Role / Timing Role: Main power switch operating at 75 kHz with 50 % duty cycle and 100 V blocking requirement. Use Value: 100 % UIS testing and 14.5 mJ E_AS ensure reliability during transient overloads and startup surges.
Industrial SMPS Primary Switch	LED Driver Primary-Side FET
Use Scenario: 60 W industrial control power supply with wide ambient temperature range (-40 to +85 °C). IC Role / Device Role / Timing Role: Primary-side switching element in constant-voltage regulated offline converter. Use Value: Stable R_DS(on) over temperature (±10 % from -55 to 125 °C) maintains consistent efficiency across operating conditions.	Use Scenario: Non-isolated buck-boost LED driver for street lighting with 100 V bus. IC Role / Device Role / Timing Role: High-side switch regulating LED current via peak-current-mode control. Use Value: Fast body diode recovery (t_rr = 43–65 ns) minimizes reverse recovery loss and improves light-output stability.

AC-DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 24 W universal-input (85–265 VAC) wall adapter powering IoT sensors.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling primary winding current in discontinuous conduction mode (DCM) flyback.

Use Value: Low Q_g (15.5 nC) and R_DS(on) (30.6 mΩ) reduce both switching and conduction losses, achieving >88 % efficiency at full load.

Use Scenario: 45 W laptop charger with active clamp flyback architecture.

IC Role / Device Role / Timing Role: Main power switch operating at 75 kHz with 50 % duty cycle and 100 V blocking requirement.

Use Value: 100 % UIS testing and 14.5 mJ E_AS ensure reliability during transient overloads and startup surges.

Industrial SMPS Primary Switch

LED Driver Primary-Side FET

Use Scenario: 60 W industrial control power supply with wide ambient temperature range (-40 to +85 °C).

IC Role / Device Role / Timing Role: Primary-side switching element in constant-voltage regulated offline converter.

Use Value: Stable R_DS(on) over temperature (±10 % from -55 to 125 °C) maintains consistent efficiency across operating conditions.

Use Scenario: Non-isolated buck-boost LED driver for street lighting with 100 V bus.

IC Role / Device Role / Timing Role: High-side switch regulating LED current via peak-current-mode control.

Use Value: Fast body diode recovery (t_rr = 43–65 ns) minimizes reverse recovery loss and improves light-output stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	TO-220FP package; higher R_DS(on) = 0.11 Ω; no UIS rating specified.	Requires heatsink; unsuitable for space-constrained PCBs; lacks avalanche ruggedness validation.	Select only when mechanical mounting flexibility outweighs thermal and ruggedness requirements.
IXTP1R1N100P	TO-220 package; R_DS(on) = 1.1 Ω; rated for 100 V but optimized for lower-current, high-voltage sensing.	Not suitable for primary-side switching above 5 W; significantly higher conduction loss.	Use only in ultra-high-voltage, low-current auxiliary circuits - not a functional alternative for SIR432DP-T1-GE3's target use cases.

Compared with STP10NK100ZFP and IXTP1R1N100P, the SIR432DP-T1-GE3 delivers superior power density, verified avalanche ruggedness, and surface-mount compatibility - making it the preferred choice for modern compact, high-efficiency AC-DC primary switches.

Availability

SIR432DP-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver primary-side switching requiring stable component supply, long-term lifecycle assurance, and RoHS/halogen-free compliance.

Supply support for SIR432DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR432DP product line targets high-frequency, high-efficiency primary-side switching in compact offline power supplies - engineered for low R_DS(on), fast switching, and ruggedness in demanding industrial and consumer applications.

FAQ

What is the maximum continuous drain current rating for the SIR432DP-T1-GE3 at 70 °C case temperature?

The SIR432DP-T1-GE3 supports 22.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the final design.

Does the SIR432DP-T1-GE3 have a specified body diode reverse recovery time?

Yes, the SIR432DP-T1-GE3 specifies t_rr = 43–65 ns under test conditions of I_F = 6.9 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery characteristic reduces switching loss and EMI in hard-switched topologies where the body diode conducts during dead-time intervals.

Is the SIR432DP-T1-GE3 suitable for use in automotive applications?

The SIR432DP-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. It is designed for industrial and consumer-grade AC-DC power supplies. For automotive applications, Vishay offers AEC-Q101-qualified alternatives such as the SQJQ410EL.

What is the gate threshold voltage range for the SIR432DP-T1-GE3?

The SIR432DP-T1-GE3 has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 µA. This range ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers while maintaining noise immunity in noisy power environments.

How does the PowerPAK SO-8 package of the SIR432DP-T1-GE3 improve thermal performance compared to standard SO-8?

The PowerPAK SO-8 package of the SIR432DP-T1-GE3 features an exposed copper drain pad on the bottom side, reducing R_thJC to 2.3 °C/W - approximately 4× better than standard SO-8. This enables direct thermal coupling to inner-layer copper pours or external heatsinks, supporting higher continuous power in space-constrained layouts.

SIR432DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 30.6mOhm @ 8.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1170 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR432DP-T1-GE3 FAQ

1.How can I place an order for SIR432DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR432DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR432DP-T1-GE3 reliable?

The price and inventory of SIR432DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR432DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR432DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR432DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR432DP-T1-GE3?

SIR432DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR432DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR432DP-T1-GE3?

For technical support, including SIR432DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR432DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR432DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR432DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR432DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR432DP-T1-GE3?

All SIR432DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR432DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR432DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR432DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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