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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR436DP-T1-GE3

Name: SIR436DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR436DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR436DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR436DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 40A PPAK SO-8

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Product details

Overview

SIR436DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 40 A continuous drain current at T_C = 25 °C, R_DS(on) = 4.6 mΩ at V_GS = 10 V, and 13 nC total gate charge - optimized for low-side switching in server VRM and high-efficiency DC-DC converters.

For engineers reviewing the SIR436DP-T1-GE3 datasheet, SIR436DP-T1-GE3 pinout, SIR436DP-T1-GE3 application, or SIR436DP-T1-GE3 equivalent, key selection criteria include its 25-V V_DS, ultra-low on-resistance at 4.5 V drive, 100 % UIS-tested ruggedness, lead-free/halogen-free compliance, and thermal performance matching DPAK via PowerPAK SO-8 footprint.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 13 nC (V_GS = 4.5 V), enabling high-frequency synchronous rectification. Its 100 % avalanche-rated design supports robust operation under inductive load switching.

The PowerPAK SO-8 package features exposed drain paddle for direct thermal conduction, achieving R_thJC = 2.0 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s), with identical SO-8 footprint compatibility and no PCB layout change required for drop-in replacement of standard SO-8 MOSFETs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12-V input systems with margin against transients.
R_DS(on)	4.6 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current VRM phases.
I_D (continuous)	40 A @ T_C = 25 °C - Package-limited current rating; supports high-density power stages without external heatsink.
Q_g	13 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching.
E_AS	80 mJ - Fully rated unclamped inductive switching energy; eliminates need for external snubbers in hard-switched topologies.
R_thJC	2.0 °C/W (typ.) - Thermal resistance from junction to case enables direct mounting to copper planes for high-power dissipation.
V_GS(th)	1–3 V - Gate threshold compatible with 3.3-V and 5-V logic-level drivers without level-shifting.

Pinout & Package

PowerPAK SO-8 (leadless, single-channel) package: 6.15 mm × 5.15 mm footprint, 1.04 mm nominal height, exposed drain paddle on bottom side for thermal and electrical connection. Compatible with standard SO-8 land patterns per Vishay Application Note AN821.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	Common high-current output node; electrically and thermally connected to exposed bottom paddle.
4	Gate (G)	Control input; requires <13 nC charge for full enhancement; 1–3 V threshold enables 3.3-V driver use.
5, 6, 7	Source (S)	Power return path; tied to PCB ground plane; forms low-inductance loop with gate and drain.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 4.6 mΩ R_DS(on) at 10 V in SO-8 footprint - 40 % lower than typical SO-8 competitors at same voltage rating.
100 % UIS tested	Guarantees 80 mJ avalanche energy handling per device - eliminates field failures in inductive load switching.
PowerPAK SO-8 package	Matches SO-8 pinout and footprint while offering DPAK-level thermal performance (R_thJC = 2.0 °C/W).
Halogen-free & Pb-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for green industrial and server applications.
Low Q_gd/Q_g ratio	Q_gd = 3.9 nC / Q_g = 13 nC → 0.3 - minimizes Miller effect, improving hard-switching robustness and EMI behavior.

Applications

Server VRM Phase Legs	High-Density DC-DC Converters
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) with >300 A total output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, switching at 500 kHz–1 MHz with 40 A peak current per FET. Use Value: 4.6 mΩ R_DS(on) and 13 nC Q_g reduce conduction + switching losses by >25 % vs. legacy SO-8 MOSFETs, enabling higher efficiency at full load.	Use Scenario: Compact 12 V–in, 5 V–out point-of-load regulator on telecom line cards with strict thermal envelope. IC Role / Device Role / Timing Role: Primary low-side switch in synchronous buck topology, operating continuously at 85 °C ambient. Use Value: R_thJC = 2.0 °C/W allows direct thermal coupling to internal copper planes, limiting ΔT_J-C to <80 °C at 25 W dissipation - avoids derating.
Industrial Motor Drive Half-Bridge	Hot-Swap ORing Circuits
Use Scenario: 24 V BLDC motor control module requiring robust low-side switching with fault tolerance. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; subjected to repetitive inductive turn-off stress. Use Value: 100 % UIS testing ensures reliable operation under 40 A inductive current interruption - prevents catastrophic failure during stall events.	Use Scenario: Redundant 12 V power supply backplane using ideal diode ORing to prevent reverse current and enable hot insertion. IC Role / Device Role / Timing Role: Low-side configured N-channel MOSFET acting as controlled forward conduction path with fast turn-on/turn-off. Use Value: 1 V V_SD body diode forward voltage and 28 ns trr minimize conduction loss and reverse recovery spikes - improves system reliability during switchover.

Server VRM Phase Legs

High-Density DC-DC Converters

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) with >300 A total output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, switching at 500 kHz–1 MHz with 40 A peak current per FET.

Use Value: 4.6 mΩ R_DS(on) and 13 nC Q_g reduce conduction + switching losses by >25 % vs. legacy SO-8 MOSFETs, enabling higher efficiency at full load.

Use Scenario: Compact 12 V–in, 5 V–out point-of-load regulator on telecom line cards with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary low-side switch in synchronous buck topology, operating continuously at 85 °C ambient.

Use Value: R_thJC = 2.0 °C/W allows direct thermal coupling to internal copper planes, limiting ΔT_J-C to <80 °C at 25 W dissipation - avoids derating.

Industrial Motor Drive Half-Bridge

Hot-Swap ORing Circuits

Use Scenario: 24 V BLDC motor control module requiring robust low-side switching with fault tolerance.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; subjected to repetitive inductive turn-off stress.

Use Value: 100 % UIS testing ensures reliable operation under 40 A inductive current interruption - prevents catastrophic failure during stall events.

Use Scenario: Redundant 12 V power supply backplane using ideal diode ORing to prevent reverse current and enable hot insertion.

IC Role / Device Role / Timing Role: Low-side configured N-channel MOSFET acting as controlled forward conduction path with fast turn-on/turn-off.

Use Value: 1 V V_SD body diode forward voltage and 28 ns trr minimize conduction loss and reverse recovery spikes - improves system reliability during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR434DP-T1-GE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 11.5 nC; same PowerPAK SO-8 package and 25-V rating.	Slightly higher conduction loss but lower gate charge - better for very high-frequency (>1 MHz) operation where switching loss dominates.	Select when prioritizing gate drive efficiency over absolute R_DS(on) minimum in compact, air-cooled designs.
IRF7470PBF	SO-8 package; R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 22 nC; not 100 % UIS tested; lead-free only (not halogen-free).	Higher thermal resistance (R_thJC ≈ 3.5 °C/W); less rugged under avalanche; requires rework of thermal layout.	Acceptable for cost-sensitive, non-critical applications where 80 mJ E_AS and halogen-free compliance are not mandatory.

Compared with SiR434DP-T1-GE3 and IRF7470PBF, the SIR436DP-T1-GE3 delivers the lowest R_DS(on) in its class with verified avalanche ruggedness and full environmental compliance - making it optimal for high-reliability server and industrial power stages where thermal headroom and long-term stability are critical.

Availability

SIR436DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, high-density DC-DC converters, and industrial motor drives requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SIR436DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SiR436DP product line targets high-current, high-frequency power conversion applications - specifically engineered to replace larger packages (e.g., DPAK) with SO-8 footprint compatibility while delivering DPAK-level thermal and electrical performance.

FAQ

What is the maximum continuous drain current rating for SIR436DP-T1-GE3 at 70 °C case temperature?

The SIR436DP-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area on the drain pad to maintain case temperature at or below 70 °C under steady-state operation.

Does SIR436DP-T1-GE3 require a gate resistor for safe operation in a 500 kHz synchronous buck converter?

The SIR436DP-T1-GE3 does not mandate a gate resistor for basic functionality, but a 2–5 Ω series gate resistor is recommended to damp ringing, control dV/dt, and limit peak gate current from the driver. With Q_g = 13 nC and typical driver rise time <20 ns, uncontrolled gate drive may cause overshoot exceeding ±20 V V_GS rating.

Is SIR436DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs such as IRF7470?

Yes - the SIR436DP-T1-GE3 uses the PowerPAK SO-8 package with identical pinout (G-S-S-S-D-D-D-D) and 5.15 mm × 6.15 mm footprint as standard SO-8. It mounts directly onto existing SO-8 land patterns per Vishay Application Note AN821, though optimal thermal performance requires extended drain copper area.

What is the body diode forward voltage (V_SD) of SIR436DP-T1-GE3 at 4.1 A and 25 °C junction temperature?

The body diode forward voltage V_SD of SIR436DP-T1-GE3 is 0.75–1.2 V at I_S = 4.1 A and V_GS = 0 V, per the Drain-Source Body Diode Characteristics table. This low V_SD minimizes conduction loss during dead-time conduction in synchronous rectifiers.

Can SIR436DP-T1-GE3 be used in linear mode (as a pass element) for precision current regulation?

No - the SIR436DP-T1-GE3 is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = 10 V, maximum continuous current drops to ~8 A due to thermal constraints, and no SOA data is provided for DC operation beyond 100 ms pulses. Use dedicated linear MOSFETs for pass-regulator applications.

SIR436DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1715 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR436DP-T1-GE3 FAQ

1.How can I place an order for SIR436DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR436DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR436DP-T1-GE3 reliable?

The price and inventory of SIR436DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR436DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR436DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR436DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR436DP-T1-GE3?

SIR436DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR436DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR436DP-T1-GE3?

For technical support, including SIR436DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR436DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR436DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR436DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR436DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR436DP-T1-GE3?

All SIR436DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR436DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR436DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR436DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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