Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR438DP-T1-GE3

Name: SIR438DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR438DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR438DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR438DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 60A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:261

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR438DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.8 mΩ at V_GS = 10 V and 2.3 mΩ at V_GS = 4.5 V, rated for 60 A continuous drain current (T_C = 25 °C), and optimized for low-side switching in high-efficiency server power rails.

For engineers reviewing the SIR438DP-T1-GE3 datasheet, SIR438DP-T1-GE3 pinout, SIR438DP-T1-GE3 application, or SIR438DP-T1-GE3 equivalent, key selection criteria include its 1.0 °C/W junction-to-case thermal resistance, 32.6 nC total gate charge at 4.5 V drive, 100 % avalanche-tested ruggedness, and compatibility with standard SO-8 PCB footprints despite its leadless construction.

Technical Context

This MOSFET employs TrenchFET® Gen III silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability and fast switching performance. Its gate threshold voltage (1.0–2.3 V) and low Q_gd/Q_g ratio (9.1/32.6 nC) support efficient operation with 4.5 V logic-level gate drivers.

The PowerPAK® SO-8 package features an exposed copper drain pad on the bottom surface, enabling direct thermal conduction to the PCB, and maintains mechanical and electrical pin compatibility with standard SO-8 layouts-despite being leadless-with identical pinout and footprint dimensions (6.15 mm × 5.15 mm).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V input rail systems with margin.
R_DS(on) @ V_GS = 10 V	1.8 mΩ - Enables <1.8 W conduction loss at 100 A, critical for high-current server VRMs.
R_DS(on) @ V_GS = 4.5 V	2.3 mΩ - Ensures full enhancement with 5 V or 4.5 V gate drive, eliminating need for level shifters.
Q_g @ V_GS = 4.5 V	32.6 nC - Low gate charge reduces driver power loss and enables high-frequency PWM (e.g., >500 kHz).
I_D (continuous, T_C = 25 °C)	60 A - Package-limited current rating; supports high-density point-of-load designs without paralleling.
R_thJC	1.0 °C/W (typ.) - Thermal path from junction to case enables efficient heat transfer to PCB copper, matching DPAK performance.
Avalanche Energy (E_AS)	125 mJ - 100 % tested single-pulse ruggedness ensures reliability under inductive switching stress.

Pinout & Package

PowerPAK® SO-8 is a leadless, surface-mount package with 8 terminals arranged identically to standard SO-8: pins 1–4 on left side (G, S, S, S), pins 5–8 on right side (D, D, D, D) in bottom view. The exposed drain pad occupies the entire underside center region, providing low-inductance, high-current paths and superior thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; low R_g (0.2–1.0 Ω) minimizes ringing during fast switching.
2, 3, 4 (S)	Source	Common return path for channel current; three parallel pins reduce source inductance and improve stability.
5, 6, 7, 8 (D)	Drain	Main power input/output node; four parallel pins plus bottom-exposed pad handle 60 A with minimal voltage drop.

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Delivers 1.8 mΩ R_DS(on) at 10 V in SO-8 footprint-enabling higher efficiency than prior-generation MOSFETs in same area.
100 % R_g tested	Guarantees gate resistance between 0.2 Ω and 1.0 Ω, ensuring consistent turn-on/turn-off timing across production lots.
100 % avalanche tested	Validates 125 mJ single-pulse energy handling-critical for reliable operation in synchronous buck converters with freewheeling diode stress.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS; eliminates hazardous substances without compromising thermal or electrical performance.
PowerPAK® SO-8 package	Matches standard SO-8 outline but replaces leads with exposed copper drain pad-reducing R_thJC by 15× vs. legacy SO-8 and enabling DPAK-level thermal performance.

Applications

Server VRM Low-Side Switch	High-Density DC-DC Converter
Use Scenario: Primary low-side switch in multiphase 12 V → 1 V synchronous buck converters powering CPU/GPU cores. IC Role / Device Role / Timing Role: Conducts high pulsed current (up to 80 A peak) during freewheeling phase; operates at 300–1000 kHz with tight dead-time control. Use Value: 2.3 mΩ R_DS(on) at 4.5 V drive eliminates external gate drivers; 1.0 °C/W R_thJC keeps junction temperature ≤110 °C under full load on 4-layer board.	Use Scenario: Output rectifier in compact industrial 48 V → 5 V isolated DC-DC modules with space-constrained PCB layout. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts only during dead time before gate turn-on. Use Value: 0.72 V typical V_SD and 34 ns t_rr minimize reverse recovery losses; 32.6 nC Q_g allows clean 500 kHz switching with minimal gate drive power.
Hot-Swap Controller FET	Redundant Power OR-ing
Use Scenario: Inrush limiting and fault isolation FET in 12 V hot-swap cards for telecom line cards and storage backplanes. IC Role / Device Role / Timing Role: Soft-start controlled turn-on; clamps overcurrent via current-sense feedback; absorbs short-circuit energy. Use Value: 125 mJ E_AS withstands repeated 50 A surge events; 60 A I_D rating supports 40 A steady-state operation with 50 % derating.	Use Scenario: OR-ing FET in dual-input redundant 25 V power supplies for network switches and edge AI accelerators. IC Role / Device Role / Timing Role: Blocks reverse current flow when one supply fails; conducts bidirectionally during normal operation with low forward drop. Use Value: 1.8 mΩ R_DS(on) limits forward voltage to <120 mV at 60 A, reducing power loss by >70 % vs. discrete Schottky solution.

Server VRM Low-Side Switch

High-Density DC-DC Converter

Use Scenario: Primary low-side switch in multiphase 12 V → 1 V synchronous buck converters powering CPU/GPU cores.

IC Role / Device Role / Timing Role: Conducts high pulsed current (up to 80 A peak) during freewheeling phase; operates at 300–1000 kHz with tight dead-time control.

Use Value: 2.3 mΩ R_DS(on) at 4.5 V drive eliminates external gate drivers; 1.0 °C/W R_thJC keeps junction temperature ≤110 °C under full load on 4-layer board.

Use Scenario: Output rectifier in compact industrial 48 V → 5 V isolated DC-DC modules with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts only during dead time before gate turn-on.

Use Value: 0.72 V typical V_SD and 34 ns t_rr minimize reverse recovery losses; 32.6 nC Q_g allows clean 500 kHz switching with minimal gate drive power.

Hot-Swap Controller FET

Redundant Power OR-ing

Use Scenario: Inrush limiting and fault isolation FET in 12 V hot-swap cards for telecom line cards and storage backplanes.

IC Role / Device Role / Timing Role: Soft-start controlled turn-on; clamps overcurrent via current-sense feedback; absorbs short-circuit energy.

Use Value: 125 mJ E_AS withstands repeated 50 A surge events; 60 A I_D rating supports 40 A steady-state operation with 50 % derating.

Use Scenario: OR-ing FET in dual-input redundant 25 V power supplies for network switches and edge AI accelerators.

IC Role / Device Role / Timing Role: Blocks reverse current flow when one supply fails; conducts bidirectionally during normal operation with low forward drop.

Use Value: 1.8 mΩ R_DS(on) limits forward voltage to <120 mV at 60 A, reducing power loss by >70 % vs. discrete Schottky solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR436DP-T1-GE3	R_DS(on) = 2.2 mΩ @ 10 V (vs. 1.8 mΩ); Q_g = 28.5 nC @ 4.5 V (vs. 32.6 nC); same PowerPAK SO-8 package.	Slightly lower conduction loss at high V_GS, but higher gate charge reduces switching efficiency at high frequency.	Prefer SIR438DP-T1-GE3 when minimizing total power loss at 4.5 V drive or >500 kHz operation is critical.
IRF7470PBF	SO-8 package (leaded); R_DS(on) = 2.8 mΩ @ 10 V; R_thJC = 3.0 °C/W; no avalanche rating specified.	Higher thermal resistance increases junction temperature rise by ~2×; untested avalanche capability limits reliability in inductive loads.	Only consider IRF7470PBF if legacy SO-8 leaded assembly is mandatory and thermal headroom exceeds 30 °C.

Compared with SiR436DP-T1-GE3, SIR438DP-T1-GE3 offers lower R_DS(on) for reduced conduction loss in high-current server rails, while compared with IRF7470PBF, it delivers 3× better thermal performance and guaranteed avalanche ruggedness-making it the preferred choice for modern high-density, high-reliability power stages.

Availability

SIR438DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, high-density DC-DC converters, hot-swap controllers, and redundant power OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for SIR438DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, ruggedness, and miniaturization.

The SIR438DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial infrastructure where thermal density and reliability are paramount.

FAQ

What is the maximum continuous drain current rating for SIR438DP-T1-GE3?

The SIR438DP-T1-GE3 is rated for 60 A continuous drain current at T_C = 25 °C, limited by package thermal capacity-not silicon. At T_C = 70 °C, the rating remains 60 A, but ambient-limited operation drops to 32 A at T_A = 70 °C per the datasheet's derating curve. This reflects its PowerPAK® SO-8 package's superior thermal design.

Does SIR438DP-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SIR438DP-T1-GE3 is fully enhanced at V_GS = 4.5 V, with R_DS(on) = 2.3 mΩ (max) and guaranteed gate threshold voltage of 1.0–2.3 V. Its low Q_g (32.6 nC) and low R_g (0.2–1.0 Ω) ensure fast, stable switching with standard 4.5 V logic drivers-no level shifter required. This makes SIR438DP-T1-GE3 ideal for 5 V or 4.5 V controller-based designs.

How does the PowerPAK® SO-8 package of SIR438DP-T1-GE3 differ from standard SO-8?

Unlike standard SO-8, the PowerPAK® SO-8 used in SIR438DP-T1-GE3 is leadless: pins 1–4 (G, S, S, S) and 5–8 (D, D, D, D) are formed as flat metal pads on the package perimeter, and the entire bottom center is an exposed copper drain pad. This yields R_thJC = 1.0 °C/W (vs. ~16 °C/W for SO-8) and matches DPAK thermal performance while retaining SO-8 footprint compatibility.

Is SIR438DP-T1-GE3 suitable for synchronous rectification applications?

Yes, SIR438DP-T1-GE3 is well-suited for synchronous rectification due to its low R_DS(on) (2.3 mΩ @ 4.5 V), fast body diode (t_rr = 34 ns typ., Q_rr = 26 nC), and low V_SD (0.72 V typ. at 4 A). These parameters reduce conduction and reverse recovery losses significantly versus Schottky diodes-especially in 12 V–48 V output converters operating above 300 kHz.

What is the avalanche ruggedness specification for SIR438DP-T1-GE3?

SIR438DP-T1-GE3 is 100 % tested for single-pulse avalanche, with rated E_AS = 125 mJ (L = 0.1 mH) and I_AS = 50 A. This ruggedness is validated per JEDEC JESD24-11 and ensures reliable operation during inductive switching transients-such as those occurring in synchronous buck converters during light-load discontinuous conduction mode or fault conditions-without degradation.

SIR438DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4560 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR438DP-T1-GE3 FAQ

1.How can I place an order for SIR438DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR438DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR438DP-T1-GE3 reliable?

The price and inventory of SIR438DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR438DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR438DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR438DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR438DP-T1-GE3?

SIR438DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR438DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR438DP-T1-GE3?

For technical support, including SIR438DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR438DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR438DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR438DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR438DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR438DP-T1-GE3?

All SIR438DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR438DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR438DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR438DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …