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Vishay Siliconix SIR4409DP-T1-RE3
- Part No.:
- SIR4409DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR4409DP-T1-RE3.pdf
- Description:
- P-CHANNEL 40 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,204
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Product details
Overview
SIR4409DP-T1-RE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in battery-powered systems, featuring -40 V VDS, 0.009 Ω RDS(on) at -10 V VGS, and 60.6 A continuous drain current at TC = 25 °C. It operates in power path control and reverse polarity protection circuits where low conduction loss and fast switching are critical.
For engineers reviewing the SIR4409DP-T1-RE3 datasheet, SIR4409DP-T1-RE3 pinout, SIR4409DP-T1-RE3 application, or SIR4409DP-T1-RE3 equivalent, this device is evaluated for high-current DC load switching, battery protection IC interfacing, and thermally constrained PCB layouts requiring PowerPAK® SO-8 footprint compatibility and verified UIS ruggedness.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for ultra-low RDS(on) × Qg figure-of-merit (FOM), enabling efficient operation at gate drive voltages as low as -4.5 V. Its body diode exhibits 19 ns reverse recovery time and 12 nC Qrr, supporting synchronous rectification in bidirectional power paths.
The device is characterized for stable performance across -55 °C to +150 °C junction temperature range, with gate threshold voltage VGS(th) specified between -1.0 V and -2.3 V and exhibiting positive temperature coefficient for inherent current sharing in parallel configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V/24 V battery systems with transient margin |
| RDS(on) max @ -10 V | 0.009 Ω - Enables ≤0.82 W conduction loss at 30 A, reducing thermal stress on PCB |
| RDS(on) max @ -4.5 V | 0.012 Ω - Ensures reliable turn-on with standard logic-level gate drivers (e.g., microcontroller GPIO) |
| Qg typ. | 38.1 nC - Supports <100 ns switching transitions with 1 Ω gate resistor, minimizing dynamic losses |
| ID cont. @ TC = 25 °C | -60.6 A - Delivers high peak load current capability without derating in heatsinked applications |
| RthJC max. | 2.1 °C/W - Allows direct thermal coupling to copper pour or heatsink for >40 W power dissipation |
| EAS | 45 mJ - Withstands single-pulse inductive energy events up to 0.1 mH, protecting against load dump |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with 2.2 Ω max. gate resistance - compatible with standard MOSFET drivers without external gate resistors |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper paddle - primary thermal and current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg FOM | 0.343 Ω·nC - Balances conduction and switching losses for optimal efficiency in 10–500 kHz PWM applications |
| 100 % Rg tested | Guarantees gate resistance ≤4.0 Ω - ensures predictable rise/fall times and eliminates gate oscillation risk |
| 100 % UIS tested | Validated avalanche energy ≥45 mJ - supports robust operation during inductive load interruption without snubbers |
| Exposed drain paddle | Thermal resistance RthJC = 1.7 °C/W typical - enables direct thermal interface to PCB copper for passive cooling |
| Pb-free and halogen-free | Complies with JEDEC J-STD-020 moisture sensitivity level 1 - allows standard reflow without baking |
Applications
| Battery Protection Circuit | High-Current Load Switch |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in portable medical devices using dual-cell Li-ion packs. IC Role / Device Role: High-side P-channel switch controlled by dedicated protection IC (e.g., BQ77PL900) to disconnect battery during fault. Use Value: 0.009 Ω RDS(on) limits voltage drop to <270 mV at 30 A, preserving system runtime and enabling accurate current sensing. |
Use Scenario: Hot-swap power enable for industrial I/O modules with 24 V supply rails. IC Role / Device Role: Main power path switch activated after inrush current limiting and pre-charge completion. Use Value: 60.6 A rating and 45 mJ EAS withstand repeated hot-plug events without degradation or thermal runaway. |
| Motor Drive Half-Bridge | USB-C Power Delivery Sink |
|
Use Scenario: Low-side switch in brushed DC motor driver for robotic actuators operating at 24 V. IC Role / Device Role: Synchronous rectifier replacing freewheeling diode to reduce conduction loss and heat generation. Use Value: 19 ns trr and -0.75 V VSD minimize body diode conduction loss and reverse recovery spikes during PWM commutation. |
Use Scenario: VBUS discharge path and reverse current blocking in USB-C PD sink controllers (e.g., CYPD3171). IC Role / Device Role: Bidirectional power path switch managing VBUS-to-ground discharge and preventing backfeed during port detach. Use Value: -40 V VDS rating accommodates USB-C PD 3.0's 20 V maximum plus safety margin; -2.3 V VGS(th) ensures clean turn-off with 3.3 V logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | RDS(on) = 0.02 Ω @ -10 V; TO-220 package; RthJA = 62 °C/W | Requires heatsink for >10 A operation; unsuitable for space-constrained layouts | Choose when legacy through-hole assembly or higher single-pulse avalanche rating (110 mJ) is required |
| DMT4005LPS-13 | RDS(on) = 0.0055 Ω @ -10 V; PowerDI 5060 package; 5.0 mm × 6.0 mm footprint | Lower RDS(on) but higher Qg (52 nC); no UIS testing documented | Choose when lowest possible conduction loss dominates design, and avalanche stress is not expected |
Compared with IRF4905PBF and DMT4005LPS-13, the SIR4409DP-T1-RE3 delivers superior thermal performance in surface-mount form factor, verified ruggedness for real-world transients, and balanced FOM for both battery life and switching efficiency in compact portable systems.
Availability
SIR4409DP-T1-RE3 is available at Aetrix Electronics and suitable for battery management systems, industrial hot-swap modules, motor control subsystems, and USB-C power delivery designs requiring stable component supply, long-term manufacturability, and full traceability.
Supply support for SIR4409DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SIR4409DP-T1-RE3 belongs to Vishay's PowerPAK® SO-8 P-channel MOSFET family, engineered specifically for high-current, low-voltage load switching in space- and thermally-constrained battery-powered equipment.
FAQ
What is the maximum continuous drain current rating for SIR4409DP-T1-RE3 at 70 °C case temperature?
The SIR4409DP-T1-RE3 supports -48.4 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8 package under sustained high-power conditions without additional heatsinking. The SIR4409DP-T1-RE3 maintains safe operation within its 150 °C maximum junction temperature limit when PCB copper area and airflow meet recommended layout guidelines.
Does SIR4409DP-T1-RE3 support logic-level gate drive?
Yes, the SIR4409DP-T1-RE3 is fully logic-level compatible, with RDS(on) guaranteed at -4.5 V VGS (0.012 Ω max). Its gate threshold voltage range of -1.0 V to -2.3 V ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, eliminating need for gate boosters in most battery-powered applications. The SIR4409DP-T1-RE3 also exhibits low gate charge (38.1 nC typ. at -4.5 V), enabling fast switching with minimal driver loading.
Is SIR4409DP-T1-RE3 suitable for avalanche-prone circuits like motor flyback or relay coil suppression?
Yes, the SIR4409DP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested to 45 mJ single-pulse avalanche energy, making it suitable for inductive load switching without external snubbers. Its trench MOSFET structure provides controlled avalanche behavior and stable parametric performance post-event. For repetitive avalanche, thermal design must ensure junction temperature remains within -55 °C to +150 °C limits. The SIR4409DP-T1-RE3 datasheet specifies IAS = -30 A and EAS = 45 mJ under defined test conditions.
What is the thermal resistance from junction to case (RthJC) for SIR4409DP-T1-RE3?
The SIR4409DP-T1-RE3 has a maximum junction-to-case thermal resistance (RthJC) of 2.1 °C/W, with 1.7 °C/W typical, measured from junction to the exposed drain paddle. This low value enables efficient heat transfer to the PCB copper pour or external heatsink. When designing thermal layout, the SIR4409DP-T1-RE3 requires minimum recommended pad dimensions (per Application Note 826) and at least 2 oz. copper on inner layers beneath the drain paddle to achieve rated power dissipation.
How does the body diode performance of SIR4409DP-T1-RE3 compare to standard Schottky alternatives?
The SIR4409DP-T1-RE3 body diode has VSD = -0.75 V (typ.) at -5 A and trr = 19 ns (typ.), offering lower forward voltage than many discrete Schottkys at high current while avoiding leakage trade-offs. Unlike Schottkys, its reverse recovery is tightly controlled and temperature-stable, reducing EMI in synchronous rectification. However, for ultra-low VF (<0.4 V) at low current, a discrete Schottky may still be preferred. The SIR4409DP-T1-RE3 integrates this diode inherently, saving board space and cost.
SIR4409DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.2A (Ta), 60.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 126 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5670 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 59.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR4409DP-T1-RE3 FAQ
1.How can I place an order for SIR4409DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR4409DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR4409DP-T1-RE3 reliable?
The price and inventory of SIR4409DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR4409DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR4409DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR4409DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR4409DP-T1-RE3?
SIR4409DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR4409DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR4409DP-T1-RE3?
For technical support, including SIR4409DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR4409DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR4409DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR4409DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR4409DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR4409DP-T1-RE3?
All SIR4409DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR4409DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR4409DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR4409DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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