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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR450DP-T1-RE3

Name: SIR450DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR450DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR450DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR450DP-T1-RE3.pdf

Description:: N-CHANNEL 45 V (D-S) MOSFET POWE

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Product details

Overview

SIR450DP-T1-RE3 from Vishay Siliconix is an N-channel 45 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.8 mΩ at V_GS = 10 V and 2.55 mΩ at V_GS = 4.5 V, with 34 nC typical total gate charge and 113 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR450DP-T1-RE3 datasheet, SIR450DP-T1-RE3 pinout, SIR450DP-T1-RE3 application, or SIR450DP-T1-RE3 equivalent, this device supports high-power-density designs requiring low conduction loss, fast switching, robust avalanche capability (E_AS = 80 mJ), and 100% R_g and UIS testing - critical for server VRMs, telecom power supplies, and motor drive half-bridges.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low Q_g (34 nC @ 4.5 V) and Q_oss, enabling high-frequency operation with minimized switching losses. Its gate threshold voltage (V_GS(th) = 1.0–2.3 V) ensures reliable turn-on with standard 4.5 V logic-level drivers.

The device features a robust body diode with t_rr = 40–80 ns and Q_rr = 47–94 nC, supporting efficient reverse recovery in synchronous rectifier topologies. Thermal design is supported by R_thJC = 1.7 °C/W (typ.) and R_thJA = 22 °C/W (typ., t ≤ 10 s) on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	45 V - Maximum blocking voltage for 12 V and 24 V input systems with margin
R_DS(on) @ 10 V	1.8 mΩ max - Enables <1 W conduction loss at 25 A, critical for high-current VRMs
R_DS(on) @ 4.5 V	2.55 mΩ max - Ensures full enhancement with 5 V microcontroller or PWM controller outputs
Q_g typ.	34 nC @ 4.5 V - Reduces gate drive power and enables >1 MHz switching in LLC resonant converters
I_D cont. (T_C = 25 °C)	113 A - Supports single-device implementation in 100+ A point-of-load stages
E_AS	80 mJ - Withstands repetitive inductive switching stress without derating in motor control H-bridges
R_thJC	1.7 °C/W typ. - Allows direct heatsinking to PCB copper or external thermal pad for >40 W dissipation

Pinout & Package

PowerPAK® SO-8 single-package: 5.15 mm × 6.15 mm footprint, leadless construction with exposed drain paddle on bottom side; solder fillet at exposed copper tip not required per Vishay specification d.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed copper paddle for optimal thermal and electrical path to PCB ground plane
G (Gate)	Control terminal	Single gate pin located at corner (pin 1 adjacent) - requires controlled impedance routing to minimize ringing

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 25 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, reducing combined conduction + switching loss
100 % R_g tested	Guarantees gate resistance ≤ 2 Ω, ensuring predictable rise/fall times and driver stage stability
100 % UIS tested	Validates ruggedness under unclamped inductive switching - no derating needed in motor gate-drive circuits
Low Q_oss	Reduces capacitive turn-off loss and improves light-load efficiency in hard-switched SMPS
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Voltage Regulator Modules (VRMs)	Telecom 48 V Intermediate Bus Converters
Use Scenario: High-current (≥100 A), multiphase buck converter supplying CPU/GPU core voltage with <100 kHz–1 MHz switching. IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, replacing Schottky diodes to reduce conduction loss. Use Value: 1.8 mΩ R_DS(on) cuts I²R loss by >60 % vs. 4.5 mΩ alternatives, enabling 95 %+ efficiency at 100 A output.	Use Scenario: Isolated or non-isolated 48 V-to-12 V DC/DC module for base station power distribution. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active clamp forward or LLC topology. Use Value: 34 nC Q_g minimizes gate drive loss at 300–500 kHz, improving full-load efficiency by 0.8–1.2 % over 50 nC competitors.
Industrial Motor Drive Half-Bridges	High-Power Density USB PD 3.1 GaN Companion Switch
Use Scenario: 24–48 V BLDC motor inverter with 3-phase, 6-switch configuration and >10 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch handling continuous 40–60 A phase current with fast commutation. Use Value: 80 mJ E_AS rating eliminates need for external snubbers during inductive flyback, simplifying layout and BOM.	Use Scenario: Secondary-side synchronous rectifier paired with 65 W–140 W GaN-based USB PD 3.1 AC/DC adapter. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Q_oss enable zero-voltage switching (ZVS) assist in QR flyback. Use Value: 40–80 ns t_rr and 47–94 nC Q_rr reduce reverse recovery loss and EMI, meeting CISPR-32 Class B conducted noise limits.

Server Voltage Regulator Modules (VRMs)

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current (≥100 A), multiphase buck converter supplying CPU/GPU core voltage with <100 kHz–1 MHz switching.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, replacing Schottky diodes to reduce conduction loss.

Use Value: 1.8 mΩ R_DS(on) cuts I²R loss by >60 % vs. 4.5 mΩ alternatives, enabling 95 %+ efficiency at 100 A output.

Use Scenario: Isolated or non-isolated 48 V-to-12 V DC/DC module for base station power distribution.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active clamp forward or LLC topology.

Use Value: 34 nC Q_g minimizes gate drive loss at 300–500 kHz, improving full-load efficiency by 0.8–1.2 % over 50 nC competitors.

Industrial Motor Drive Half-Bridges

High-Power Density USB PD 3.1 GaN Companion Switch

Use Scenario: 24–48 V BLDC motor inverter with 3-phase, 6-switch configuration and >10 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 40–60 A phase current with fast commutation.

Use Value: 80 mJ E_AS rating eliminates need for external snubbers during inductive flyback, simplifying layout and BOM.

Use Scenario: Secondary-side synchronous rectifier paired with 65 W–140 W GaN-based USB PD 3.1 AC/DC adapter.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Q_oss enable zero-voltage switching (ZVS) assist in QR flyback.

Use Value: 40–80 ns t_rr and 47–94 nC Q_rr reduce reverse recovery loss and EMI, meeting CISPR-32 Class B conducted noise limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40B216TRPBF	R_DS(on) = 2.1 mΩ @ 10 V; Q_g = 42 nC; TO-263 package	Larger footprint and higher thermal resistance (R_thJC = 2.5 °C/W); requires heatsink for >60 A	Choose when board space allows TO-263 and higher R_thJC is acceptable for lower-cost assembly
DMTH4007LPSQ-13	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 38 nC; PowerPAK 8x8 package	8x8 mm footprint doubles area; higher current rating (120 A) but slower t_r/t_f due to larger die	Prefer for >120 A designs where thermal headroom outweighs layout density constraints

Compared with IRL40B216TRPBF and DMTH4007LPSQ-13, the SIR450DP-T1-RE3 offers the best combination of low R_DS(on), minimal Q_g, and compact PowerPAK SO-8 footprint - enabling highest power density in space-constrained VRMs and telecom modules without sacrificing ruggedness or drive simplicity.

Availability

SIR450DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp and sustained manufacturing.

Supply support for SIR450DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIR450DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current synchronous rectification and switching applications in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIR450DP-T1-RE3 at 70 °C case temperature?

The SIR450DP-T1-RE3 supports 91 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat transfer capability at elevated case temperatures and must be validated against actual PCB copper area and airflow in the target application. The SIR450DP-T1-RE3 maintains its 1.8 mΩ R_DS(on) performance up to T_J = 150 °C.

Does SIR450DP-T1-RE3 support logic-level gate drive?

Yes, the SIR450DP-T1-RE3 is fully logic-level compatible, with guaranteed R_DS(on) of 2.55 mΩ max at V_GS = 4.5 V and V_GS(th) ranging from 1.0 V to 2.3 V. This allows direct drive from standard 5 V microcontrollers, PWM controllers, or gate driver ICs without level-shifting circuitry - a key advantage confirmed in the "Specifications" section of the datasheet.

What is the thermal resistance from junction to case (R_thJC) for SIR450DP-T1-RE3?

The SIR450DP-T1-RE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, with a maximum of 2.6 °C/W, measured from junction to the exposed drain paddle. This value assumes proper soldering to a thermally enhanced PCB pad per Vishay Application Note 826. The SIR450DP-T1-RE3 leverages the PowerPAK SO-8's copper paddle for low-impedance thermal path to the board.

Is SIR450DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, the SIR450DP-T1-RE3 is explicitly recommended for synchronous rectification, including in LLC resonant converters. Its low Q_g (34 nC @ 4.5 V), low Q_oss, and fast body diode (t_rr = 40–80 ns) enable efficient ZVS-assisted turn-on and minimal reverse recovery loss - characteristics validated in Vishay's application notes and confirmed in the "Applications" section of the SIR450DP-T1-RE3 datasheet.

What packaging and compliance certifications apply to SIR450DP-T1-RE3?

The SIR450DP-T1-RE3 is supplied in tape-and-reel format (T1) with Pb-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU. Material compliance follows Vishay's categorization standard documented in www.vishay.com/doc?99912. The "RE3" suffix denotes RoHS-compliant, green, lead-free termination per Vishay's ordering nomenclature.

SIR450DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 5920 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR450DP-T1-RE3 FAQ

1.How can I place an order for SIR450DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR450DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR450DP-T1-RE3 reliable?

The price and inventory of SIR450DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR450DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR450DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR450DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR450DP-T1-RE3?

SIR450DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR450DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR450DP-T1-RE3?

For technical support, including SIR450DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR450DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR450DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR450DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR450DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR450DP-T1-RE3?

All SIR450DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR450DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR450DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR450DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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