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Vishay Siliconix SIR4604DP-T1-GE3
- Part No.:
- SIR4604DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR4604DP-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:8,834
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Product details
Overview
SIR4604DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 49.3 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0095 Ω at VGS = 10 V and total gate charge of 11.2 nC (VGS = 7.5 V). It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIR4604DP-T1-GE3 datasheet, SIR4604DP-T1-GE3 pinout, SIR4604DP-T1-GE3 application, or SIR4604DP-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qg and RDS(on)–Qoss figures-of-merit, 100% Rg and UIS testing, and suitability for thermally constrained industrial and motor drive switch designs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss. Its dynamic parameters-Ciss = 960 pF, Coss = 245 pF, Crss = 8.4 pF, and Qgd = 2.6 nC-support high-frequency operation in hard-switched topologies. The device features a body diode with trr = 23 ns and Qrr = 13 nC, enabling efficient synchronous rectification.
Thermal design is supported by RthJC = 2.4 °C/W (typical) and RthJA = 23 °C/W (t ≤ 10 s), with maximum junction temperature rated to +150 °C. Gate threshold voltage (VGS(th) = 2–4 V) and transconductance (gfs = 24 S) ensure robust drive compatibility with standard 5 V or 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for primary-side switch applications up to 48 V bus systems |
| RDS(on) max @ VGS = 10 V | 0.0095 Ω - Enables <1 W conduction loss at 32 A, critical for high-current DC/DC output stages |
| Qg typ @ VGS = 7.5 V | 11.2 nC - Low gate charge reduces driver power demand and switching loss in 300–1000 kHz converters |
| ID continuous @ TC = 25 °C | 49.3 A - Supports high-power motor drive and battery switch applications without external heatsink |
| Qrr | 13 nC - Minimizes reverse recovery loss during synchronous rectification in buck or LLC topologies |
| RthJC | 2.4 °C/W - Enables direct thermal coupling to PCB copper or heatsink for sustained >30 W power dissipation |
| VGS(th) | 2–4 V - Compatible with logic-level and standard gate drivers; avoids unintended turn-on near 0 V |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain paddle), 6.15 mm × 5.15 mm footprint, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four exposed-drain pads on bottom side provide low-inductance, high-current path to PCB ground plane |
| G (top-side pad) | Gate | Single top-side gate pad enables compact layout and controlled gate loop inlay routing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on)–Qg FOM of ~0.085 Ω·nC, optimizing trade-off between conduction and switching loss |
| 100% Rg tested | Ensures gate resistance ≤ 1.4 Ω, guaranteeing predictable gate drive timing and EMI control |
| 100% UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 20 A, L = 0.1 mH |
| Low Qoss (15.1 nC) | Reduces capacitive turn-off loss and improves light-load efficiency in resonant converters |
| Exposed drain paddle | Provides direct thermal path to PCB, achieving RthJA = 23 °C/W (t ≤ 10 s) without added heatsink |
Applications
| Server VRM Output Stage | Industrial Motor Drive H-Bridge |
|---|---|
Use Scenario: High-current, high-frequency buck converter delivering 12 V/60 A to CPU cores. IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET operating at 500–800 kHz with forced PWM control. Use Value: RDS(on) = 0.0095 Ω limits conduction loss to <6 W at full load; low Qg enables clean gate drive with minimal overshoot. |
Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 15 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM inverter stage with fast body diode commutation. Use Value: trr = 23 ns and Qrr = 13 nC minimize shoot-through risk and diode recovery loss during dead-time transitions. |
| Telecom DC/DC Brick | Automotive Body Control Module Load Switch |
Use Scenario: Isolated forward converter secondary-side synchronous rectifier in 48 V telecom power supply. IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode in active rectification scheme. Use Value: VDS = 60 V rating provides 20% margin over 48 V nominal input; low RDS(on) improves full-load efficiency by ≥1.2% vs. discrete diode. |
Use Scenario: 12 V battery-powered load switch controlling solenoid or LED array in automotive BCM. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch with integrated overtemperature protection. Use Value: TJ range of –55 to +150 °C ensures reliable operation under hood conditions; 49.3 A rating supports 30 A continuous load with margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.012 Ω @ 10 V, Qg = 16 nC, TO-252 package | Higher thermal resistance (RthJA ≈ 62 °C/W), lower current density | Prefer when board-level reworkability or through-hole compatibility is required over power density |
| SiR626DP-T1-GE3 | Same PowerPAK SO-8 package, but 100 V rating, RDS(on) = 0.0145 Ω @ 10 V, Qg = 13.5 nC | Higher voltage headroom for 60 V bus systems with transient spikes | Select when system requires >60 V transient tolerance while retaining identical footprint and thermal profile |
Compared with IRF7470PBF and SiR626DP-T1-GE3, the SIR4604DP-T1-GE3 delivers the lowest RDS(on)–Qg FOM in its class, enabling higher efficiency in space-constrained 48 V DC/DC and motor drive applications where thermal management relies on PCB copper rather than external heatsinks.
Availability
SIR4604DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM output stages, industrial motor drives, and telecom DC/DC bricks requiring stable component supply and consistent parametric performance across production lots.
Supply support for SIR4604DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SIR4604DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current power conversion in data center, industrial, and automotive subsystems where low RDS(on) and fast switching are critical.
FAQ
What is the maximum continuous drain current rating for SIR4604DP-T1-GE3 at case temperature of 70 °C?
The SIR4604DP-T1-GE3 supports 39.5 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK SO-8 package's RthJC = 2.4 °C/W and maximum junction temperature of +150 °C. Designers must verify PCB copper area and airflow to sustain this current in real-world layouts.
Does SIR4604DP-T1-GE3 have a fully characterized body diode for synchronous rectification?
Yes, the SIR4604DP-T1-GE3 includes a fully specified body diode with trr = 23 ns (typical), Qrr = 13 nC (typical), and VSD = 0.81 V (typical at IS = 5 A, TJ = 25 °C). These parameters are measured and guaranteed across temperature, making SIR4604DP-T1-GE3 suitable for synchronous rectification in buck, flyback, and LLC converters without external diode supplementation.
Is SIR4604DP-T1-GE3 compatible with standard 5 V gate drivers?
Yes, SIR4604DP-T1-GE3 has a gate threshold voltage VGS(th) of 2–4 V and achieves RDS(on) = 0.0124 Ω at VGS = 7.5 V, ensuring full enhancement with 5 V logic-level drivers. Its low Qg (11.2 nC at 7.5 V) further minimizes driver power consumption and allows use with low-current gate drivers such as the TI UCC27517.
What is the thermal resistance from junction to ambient for SIR4604DP-T1-GE3 under short-duration pulse conditions?
For t ≤ 10 s, the SIR4604DP-T1-GE3 exhibits RthJA = 23 °C/W (typical) when mounted on a 1" × 1" FR4 board. This value assumes standard JEDEC test conditions and is significantly lower than steady-state RthJA (70 °C/W), reflecting the benefit of thermal mass in transient operation. Layout-dependent improvements up to 15% are achievable with enhanced copper pour.
How is the SIR4604DP-T1-GE3 qualified for reliability in industrial applications?
The SIR4604DP-T1-GE3 undergoes 100% Rg and UIS testing per datasheet, with UIS validated to IAS = 20 A (L = 0.1 mH). It meets Vishay's industrial-grade qualification standards including HTOL, uHAST, and temperature cycling, supporting operation from –55 to +150 °C. Full reliability data is documented in Vishay's PPG report for document number 62027.
SIR4604DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.1A (Ta), 49.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.9W (Ta), 41.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR4604DP-T1-GE3 FAQ
1.How can I place an order for SIR4604DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR4604DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR4604DP-T1-GE3 reliable?
The price and inventory of SIR4604DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR4604DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR4604DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR4604DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR4604DP-T1-GE3?
SIR4604DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR4604DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR4604DP-T1-GE3?
For technical support, including SIR4604DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR4604DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR4604DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR4604DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR4604DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR4604DP-T1-GE3?
All SIR4604DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR4604DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR4604DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR4604DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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