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Vishay Siliconix SIR4604LDP-T1-GE3
- Part No.:
- SIR4604LDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR4604LDP-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,326
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Product details
Overview
SIR4604LDP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.0089 Ω at VGS = 10 V, Qg = 8.5 nC (at 4.5 V), and 51 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SIR4604LDP-T1-GE3 datasheet, SIR4604LDP-T1-GE3 pinout, SIR4604LDP-T1-GE3 application, or SIR4604LDP-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS tested reliability, and thermal performance with RthJC = 2.4 °C/W (typical) for high-power-density board designs.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized charge distribution to minimize conduction and switching losses simultaneously. Its gate threshold voltage (VGS(th) = 1–3 V) and low gate resistance (Rg = 0.3–1.5 Ω) support fast, robust turn-on under 4.5 V logic-level drive, while the body diode exhibits trr = 22–44 ns and Qrr = 13–26 nC for reduced recovery loss in hard-switched topologies.
The device is characterized for operation across -55 °C to +150 °C junction temperature, with guaranteed avalanche energy EAS = 20 mJ and single-pulse IAS = 20 A - enabling reliable use in transient-prone power supply rails and motor control H-bridge legs without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal input systems with 20 % margin for surge and ringback. |
| RDS(on) max @ 10 V | 0.0089 Ω - enables ≤ 4.5 W conduction loss at 10 A, critical for thermally constrained DC/DC phases. |
| RDS(on) max @ 4.5 V | 0.0124 Ω - ensures stable on-resistance under standard logic-level gate drive without level-shifting. |
| Qg typ @ 4.5 V | 8.5 nC - reduces gate drive power and enables >1 MHz switching in high-frequency POL converters. |
| ID continuous @ TC = 25 °C | 51 A - supports high-current single-phase buck stages up to ~200 W with minimal paralleling. |
| RthJC max | 3.0 °C/W - allows direct heatsink attachment via exposed drain paddle for <10 °C rise at 20 W dissipation. |
| EAS | 20 mJ - withstands repetitive unclamped inductive switching events in motor gate drivers and OR-ing FETs. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed copper drain paddle on bottom side; JEDEC MO-263 compatible). Dimensions: 6.15 mm × 5.15 mm × 1.05 mm. Thermal pad soldered to PCB ground plane for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input with low Rg (0.8 Ω typical) minimizes Miller-induced oscillation risk during fast switching. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to large internal copper paddle - forms primary thermal path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers best-in-class RDS(on) × Qoss FOM for reduced switching loss in high-frequency SMPS. |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and ruggedness against unclamped inductive loads. |
| Exposed drain paddle | Enables <3.0 °C/W junction-to-case thermal resistance - critical for compact, fanless industrial power modules. |
| Low Qgd/Qg ratio | Qgd = 2.3 nC (typ.) / Qg = 8.5 nC → ~27 % - improves hard-switching immunity and reduces Miller plateau duration. |
| Body diode trr = 22 ns (typ.) | Minimizes reverse recovery loss and associated EMI in synchronous rectifier configurations. |
Applications
| Server VRM Phase FET | Industrial DC/DC Primary Switch |
|---|---|
Use Scenario: High-current, high-frequency (500 kHz–1 MHz) buck converter in 12 V input server VRMs powering CPUs/GPUs. IC Role / Device Role / Timing Role: Primary-side high-side switch handling up to 50 A peak current per phase with tight duty-cycle control. Use Value: Low RDS(on) × Qg enables high efficiency (>95 %) at light load while maintaining thermal headroom under full load. |
Use Scenario: 48 V input isolated forward or half-bridge DC/DC converter in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Main switching FET on primary side, operating at 100–300 kHz with 50 % duty cycle. Use Value: 60 V rating provides 20 % overvoltage margin for 48 V bus transients; RthJC = 2.4 °C/W simplifies thermal design without heatsinks. |
| OR-ing Controller Back-End FET | BLDC Motor Gate Driver High-Side |
Use Scenario: Redundant 12 V power rail OR-ing in telecom shelf management units using ideal diode controllers. IC Role / Device Role / Timing Role: Low-loss bidirectional conduction path replacing Schottky diodes; body diode conducts reverse current during fault. Use Value: VSD = 0.8–1.1 V (at 5 A) and low Qrr reduce forward and reverse recovery losses versus discrete diodes. |
Use Scenario: High-side switch in three-phase BLDC inverter stage for 24–48 V battery-powered tools and pumps. IC Role / Device Role / Timing Role: Upper-leg FET in 60 V-rated half-bridge, commutated at ≤20 kHz with bootstrap gate drive. Use Value: Guaranteed UIS rating and 150 °C TJ(max) ensure survival during shoot-through faults and stall conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0095 Ω @ 10 V; Qg = 12.5 nC @ 4.5 V; TO-252 package; RthJA = 62 °C/W (typ.) | Higher thermal resistance limits power density; suitable only where board space allows larger footprint and airflow. | Choose IRF7470PBF only if TO-252 mounting compatibility is required and switching frequency ≤300 kHz. |
| DMTH6009LPSQ-13 | RDS(on) = 0.0092 Ω @ 10 V; Qg = 10.5 nC @ 4.5 V; PowerPAK 8x8 package; RthJC = 1.4 °C/W | Larger 8x8 mm footprint offers lower RthJC but consumes >2× PCB area; higher cost per amp. | Choose DMTH6009LPSQ-13 only when thermal budget demands <1.5 °C/W and layout permits larger package. |
Compared with IRF7470PBF and DMTH6009LPSQ-13, the SIR4604LDP-T1-GE3 delivers the best balance of low-profile PowerPAK SO-8 form factor, sub-9 nC gate charge, and 2.4 °C/W thermal resistance - making it optimal for space-constrained, high-frequency, medium-power applications where thermal and layout constraints are tightly coupled.
Availability
SIR4604LDP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, OR-ing power systems, and BLDC motor drives requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.
Supply support for SIR4604LDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across automotive, industrial, and computing markets.
The SIR4604LDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion and synchronous rectification where low RDS(on) × Qg and robust avalanche capability are essential.
FAQ
What is the maximum continuous drain current for SIR4604LDP-T1-GE3 at 70 °C case temperature?
The SIR4604LDP-T1-GE3 supports 40.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-power operation and must be validated against actual board-level thermal performance using the provided RthJC = 2.4 °C/W (typ.) value. The SIR4604LDP-T1-GE3 datasheet confirms this rating applies under steady-state conditions with proper PCB copper pour.
Does SIR4604LDP-T1-GE3 support logic-level gate drive at 4.5 V?
Yes, the SIR4604LDP-T1-GE3 is fully characterized for logic-level operation: RDS(on) is guaranteed ≤0.0124 Ω at VGS = 4.5 V and ID = 10 A, and its VGS(th) range of 1–3 V ensures reliable turn-on with standard 4.5 V microcontroller or gate driver outputs. The SIR4604LDP-T1-GE3 also specifies Qg = 8.5 nC (typ.) at 4.5 V, confirming efficient switching under logic-level conditions.
What is the thermal resistance from junction to case (RthJC) for SIR4604LDP-T1-GE3?
The SIR4604LDP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 2.4 °C/W and a maximum of 3.0 °C/W, measured from junction to the exposed drain paddle. This low value is enabled by the PowerPAK SO-8's copper-limited thermal path and requires adequate solder coverage of the bottom-side thermal pad to PCB ground plane. The SIR4604LDP-T1-GE3 datasheet explicitly defines this parameter under steady-state conditions.
Is SIR4604LDP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, the SIR4604LDP-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low RDS(on) = 0.0089 Ω @ 10 V, fast body diode (trr = 22 ns typ., Qrr = 13 nC), and low Qgd/Qg ratio (~27 %), which minimizes Miller-induced turn-on risk during zero-voltage switching transitions. The SIR4604LDP-T1-GE3 datasheet cites "synchronous rectification" as a primary application and validates performance under relevant dynamic conditions.
What packaging and environmental compliance does SIR4604LDP-T1-GE3 meet?
The SIR4604LDP-T1-GE3 is supplied in tape-and-reel format (T1 suffix) and is lead (Pb)-free and halogen-free per Vishay's material categorization standard (document #99912). It complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 - unlimited floor life at ≤30 °C/60 % RH. The SIR4604LDP-T1-GE3 ordering information confirms "-GE3" denotes green, halogen-free, and lead-free construction.
SIR4604LDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.6A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1180 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.9W (Ta), 41.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR4604LDP-T1-GE3 FAQ
1.How can I place an order for SIR4604LDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR4604LDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR4604LDP-T1-GE3 reliable?
The price and inventory of SIR4604LDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR4604LDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR4604LDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR4604LDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR4604LDP-T1-GE3?
SIR4604LDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR4604LDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR4604LDP-T1-GE3?
For technical support, including SIR4604LDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR4604LDP-T1-GE3 requirements.
6.How does Aetrix verify that SIR4604LDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR4604LDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR4604LDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR4604LDP-T1-GE3?
All SIR4604LDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR4604LDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR4604LDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR4604LDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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