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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR4608DP-T1-GE3

Name: SIR4608DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR4608DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR4608DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR4608DP-T1-GE3.pdf

Description:: N-CHANNEL 60 V (D-S) MOSFET POWE

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Product details

Overview

SIR4608DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0118 Ω at V_GS = 10 V, Q_g = 8.9 nC (at 7.5 V), and 42.8 A continuous drain current at T_C = 25 °C. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.

For engineers reviewing the SIR4608DP-T1-GE3 datasheet, SIR4608DP-T1-GE3 pinout, SIR4608DP-T1-GE3 application, or SIR4608DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS testing, and suitability for thermally constrained industrial and motor drive switch designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for minimal conduction and switching losses. Its gate charge profile (Q_g = 8.9 nC at 7.5 V, Q_gd = 1.9 nC) enables fast, efficient hard-switching in high-frequency DC/DC topologies.

The device features a robust body diode with t_rr = 20–40 ns and Q_rr = 12–24 nC, supporting synchronous rectification without external Schottky assistance. Thermal resistance R_thJC = 2.5 °C/W (typ.) ensures effective heat transfer to the PCB copper pad in PowerPAK SO-8 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for primary-side switch operation in ≤48 V input systems
R_DS(on) max @ 10 V	0.0118 Ω - Enables <1.2 W conduction loss at 10 A, critical for thermal management in compact converters
Q_g typ @ 7.5 V	8.9 nC - Low gate drive energy reduces driver IC loading and switching transition time
I_D continuous @ T_C = 25 °C	42.8 A - Supports high-current output stages without parallel devices in space-constrained layouts
R_thJC max	3.2 °C/W - Confirms efficient junction-to-case heat extraction when mounted on 1" × 1" FR4 with thermal pad
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
Body diode V_SD	0.82–1.1 V @ I_S = 5 A - Low forward drop improves efficiency in bidirectional or freewheeling paths

Pinout & Package

Package: PowerPAK® SO-8 - leadless, bottom-terminated surface-mount package with exposed drain copper on underside for enhanced thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed bottom copper pad, enabling low-inductance, high-current return path
G (Gate)	Control input	Single gate terminal located at pin 1 position per top-view diagram; requires <2.6 Ω gate resistance for optimal switching

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on)–Q_oss FOM for reduced switching loss in 300–1000 kHz DC/DC converters
100% R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in turn-on/turn-off behavior
100% UIS tested	Guarantees ruggedness under unclamped inductive switching stress-critical for motor drive and load switch reliability
PowerPAK SO-8 thermal design	Bottom-exposed drain pad achieves R_thJC = 2.5 °C/W (typ.), outperforming standard SO-8 by >40 % in thermal resistance
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912)

Applications

Server VRM Primary Switch	Industrial Motor Drive Half-Bridge
Use Scenario: High-density 48 V input server voltage regulator module operating at 500 kHz switching frequency with tight thermal budget. IC Role / Device Role / Timing Role: Primary-side high-side switch handling up to 40 A peak current per phase. Use Value: Low R_DS(on) (0.0118 Ω) and Q_g (8.9 nC) minimize combined conduction and switching losses, enabling >95 % efficiency at full load.	Use Scenario: 24 V BLDC motor controller in factory automation requiring robust short-circuit tolerance and fast PWM response. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving motor phase windings. Use Value: 100 % UIS rating and 15 A single-pulse avalanche current capability withstand motor stall and inductive kickback events.
USB-C PD Load Switch	Telecom DC/DC Sync Rectifier
Use Scenario: 20 V/5 A USB Power Delivery load switch with inrush current limiting and reverse polarity protection. IC Role / Device Role / Timing Role: Single N-channel load switch controlling power delivery to downstream port circuitry. Use Value: V_GS(th) of 2–4 V ensures clean turn-on with 3.3 V microcontroller GPIO; low R_DS(on) limits voltage drop to <210 mV at 5 A.	Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom DC/DC converter operating at 300 kHz. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Q_gd enable precise gate timing for zero-voltage switching (ZVS) control. Use Value: Body diode t_rr = 20–40 ns and Q_rr = 12–24 nC reduce reverse recovery loss and EMI generation during commutation.

Server VRM Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-density 48 V input server voltage regulator module operating at 500 kHz switching frequency with tight thermal budget.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling up to 40 A peak current per phase.

Use Value: Low R_DS(on) (0.0118 Ω) and Q_g (8.9 nC) minimize combined conduction and switching losses, enabling >95 % efficiency at full load.

Use Scenario: 24 V BLDC motor controller in factory automation requiring robust short-circuit tolerance and fast PWM response.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving motor phase windings.

Use Value: 100 % UIS rating and 15 A single-pulse avalanche current capability withstand motor stall and inductive kickback events.

USB-C PD Load Switch

Telecom DC/DC Sync Rectifier

Use Scenario: 20 V/5 A USB Power Delivery load switch with inrush current limiting and reverse polarity protection.

IC Role / Device Role / Timing Role: Single N-channel load switch controlling power delivery to downstream port circuitry.

Use Value: V_GS(th) of 2–4 V ensures clean turn-on with 3.3 V microcontroller GPIO; low R_DS(on) limits voltage drop to <210 mV at 5 A.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom DC/DC converter operating at 300 kHz.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Q_gd enable precise gate timing for zero-voltage switching (ZVS) control.

Use Value: Body diode t_rr = 20–40 ns and Q_rr = 12–24 nC reduce reverse recovery loss and EMI generation during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.013 Ω @ 10 V; Q_g = 12.5 nC; TO-252 package; higher R_thJA (62 °C/W)	Requires larger PCB area and heatsinking; less suitable for ultra-thin or high-power-density designs	Prefer where cost sensitivity outweighs thermal or layout constraints
SiR626DP-T1-GE3	Same PowerPAK SO-8 footprint; 60 V; R_DS(on) = 0.0075 Ω @ 10 V; Q_g = 12.4 nC; higher current (52 A)	Higher conduction efficiency but increased switching loss; may require gate driver redesign	Select when lower R_DS(on) is prioritized and gate drive strength supports higher Q_g

Compared with IRF7470PBF, SIR4608DP-T1-GE3 offers superior thermal performance and smaller footprint; compared with SiR626DP-T1-GE3, it trades 32 % higher R_DS(on) for 28 % lower Q_g, favoring high-frequency, gate-drive-limited applications.

Availability

SIR4608DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and USB-C PD load switching requiring stable component supply and long-term production continuity.

Supply support for SIR4608DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR4608DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered for high-frequency DC/DC conversion, synchronous rectification, and industrial switching applications demanding low R_DS(on)–Q_oss trade-offs.

FAQ

What is the maximum continuous drain current rating for SIR4608DP-T1-GE3 at case temperature of 70 °C?

The SIR4608DP-T1-GE3 supports 34.3 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK SO-8 package under sustained high-temperature operation and must be validated against actual board layout and airflow conditions in the final design.

Does SIR4608DP-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SIR4608DP-T1-GE3 has a guaranteed V_GS(th) range of 2 V to 4 V at I_D = 250 μA and T_J = 25 °C. This specification ensures compatibility with 3.3 V and 5 V logic-level gate drivers across process and temperature variations, and is verified per production test flow.

Can SIR4608DP-T1-GE3 be used in synchronous rectification without external diode steering?

Yes, the SIR4608DP-T1-GE3 is qualified for synchronous rectification due to its characterized body diode parameters: V_SD = 0.82–1.1 V at I_S = 5 A and t_rr = 20–40 ns. These values allow direct replacement of Schottky diodes in secondary-side rectification, provided gate timing aligns with transformer voltage polarity transitions.

What is the thermal resistance from junction to ambient for SIR4608DP-T1-GE3 under standard mounting conditions?

The SIR4608DP-T1-GE3 exhibits R_thJA = 24 °C/W (typical) and 34 °C/W (maximum) when surface mounted on a 1" × 1" FR4 board, per datasheet note b. This value assumes no additional heatsink and defines the upper bound of allowable power dissipation in natural-convection environments.

Is SIR4608DP-T1-GE3 rated for unclamped inductive switching (UIS)?

Yes, the SIR4608DP-T1-GE3 undergoes 100 % UIS testing per production screening. Its single-pulse avalanche rating is I_AS = 15 A (L = 0.1 mH), corresponding to E_AS = 11.25 mJ. This confirms ruggedness in motor drive, relay, and solenoid switching applications where inductive energy must be safely absorbed.

SIR4608DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13.1A (Ta), 42.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR4608DP-T1-GE3 FAQ

1.How can I place an order for SIR4608DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR4608DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR4608DP-T1-GE3 reliable?

The price and inventory of SIR4608DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR4608DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR4608DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR4608DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR4608DP-T1-GE3?

SIR4608DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR4608DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR4608DP-T1-GE3?

For technical support, including SIR4608DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR4608DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR4608DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR4608DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR4608DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR4608DP-T1-GE3?

All SIR4608DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR4608DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR4608DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR4608DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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