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Vishay Siliconix SIR4608LDP-T1-GE3
- Part No.:
- SIR4608LDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR4608LDP-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:5,993
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Product details
Overview
SIR4608LDP-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.0115 Ω at VGS = 10 V, Qg = 7 nC (typ.), and continuous drain current of 43.4 A at TC = 25 °C. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIR4608LDP-T1-GE3 datasheet, SIR4608LDP-T1-GE3 pinout, SIR4608LDP-T1-GE3 application, or SIR4608LDP-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qg and RDS(on) × Qoss figures-of-merit, 100% Rg and UIS testing, and suitability for high-frequency switching in compact power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for fast switching with minimized gate charge and output capacitance. Its dynamic parameters-Ciss = 905 pF, Coss = 198 pF, Crss = 6.2 pF, and Qoss = 12.4 pF at VDS = 30 V-support efficient operation in hard-switched and resonant topologies.
The device features a body diode with trr = 19 ns (typ.) and Qrr = 9 nC (typ.) at IF = 10 A, enabling robust performance in OR-ing and bidirectional power path applications. Thermal resistance RthJC = 2.5 °C/W (typ.) enables high-power density mounting on thermally enhanced PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for primary-side switch or OR-ing FET in 48 V systems |
| RDS(on) @ 10 V | 0.0115 Ω - Enables <1.2 W conduction loss at 10 A, critical for thermal management in sealed enclosures |
| RDS(on) @ 4.5 V | 0.0153 Ω - Supports logic-level drive from 3.3 V/5 V controllers without level-shifting circuitry |
| Qg (4.5 V) | 7 nC - Reduces gate drive power and enables >1 MHz switching in GaN-assisted hybrid designs |
| ID (TC = 25 °C) | 43.4 A - Sustains high-current pulses in motor drive half-bridges without derating |
| RthJC | 2.5 °C/W - Allows direct heatsink attachment to exposed drain paddle for <50 °C junction rise at 25 W dissipation |
| VGS(th) | 1–3 V - Ensures reliable turn-on with standard microcontroller GPIO while avoiding shoot-through in bridge configurations |
Pinout & Package
Package: PowerPAK® SO-8 (leadless), 6.15 mm × 5.15 mm footprint with exposed copper drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to exposed bottom paddle-primary thermal path and high-current return path |
| G (Gate) | Control input | Single gate terminal located at pin 1 edge; requires <2.6 Ω gate resistance to damp ringing per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers industry-leading RDS(on) × Qg = 0.081 nΩ·FOM at 10 V, reducing total switching + conduction losses |
| 100% Rg tested | Guarantees gate resistance ≤ 2.6 Ω, enabling predictable gate drive design and EMI control |
| 100% UIS tested | Validates ruggedness against unclamped inductive switching events up to IAS = 15 A and EAS = 11.25 mJ |
| Optimized RDS(on) × Qoss | Minimizes capacitive turn-off loss and improves light-load efficiency in LLC and ZVS converters |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for leadless packages |
Applications
| Synchronous Rectification | Primary-Side Switch |
|---|---|
|
Use Scenario: Secondary-side rectification in isolated 12 V/48 V DC/DC converters operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and conduction loss. Use Value: Achieves >96% efficiency at full load by cutting conduction loss by 40% versus 40 V Schottky, enabled by RDS(on) = 0.0153 Ω at 4.5 V drive. |
Use Scenario: High-side switch in non-isolated buck converters powering FPGA core rails (0.8–1.2 V @ 20–40 A). IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor. Use Value: Supports 500 kHz operation with <18 ns turn-off delay and <8 ns fall time, minimizing dead-time losses and improving transient response. |
| OR-ing Circuit | Battery Load Switch |
|
Use Scenario: Redundant 24 V power supply OR-ing in industrial PLC backplanes requiring hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with reverse current blocking. Use Value: Enables <100 μs reverse current cutoff via fast body diode recovery (trr = 19 ns) and low VSD = 0.81 V, reducing heat generation during fault conditions. |
Use Scenario: 12 V battery disconnect switch in automotive telematics modules with wake-up over CAN. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to downstream MCU and RF subsystems. Use Value: Supports 43.4 A inrush current handling and maintains <12 mΩ on-resistance across -40 to +125 °C, ensuring stable rail sequencing during cold cranking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.012 Ω @ 10 V; Qg = 12 nC; TO-252 package; higher RthJA = 62 °C/W | Lower switching speed due to higher Qg; unsuitable for >300 kHz operation | Prefer SIR4608LDP-T1-GE3 where board space and thermal performance are constrained |
| DMTH6016LPSQ-13 | RDS(on) = 0.0135 Ω @ 10 V; Qg = 9.5 nC; PowerFLAT™ 5×6 package; RthJC = 2.9 °C/W | Higher gate charge increases driver loss; slightly larger footprint than PowerPAK SO-8 | Choose SIR4608LDP-T1-GE3 when optimizing for lowest RDS(on) × Qg and proven reliability in high-volume server PSU designs |
Compared with IRF7470PBF and DMTH6016LPSQ-13, the SIR4608LDP-T1-GE3 delivers superior figure-of-merit (RDS(on) × Qg = 0.081 vs. 0.144 and 0.128), tighter thermal resistance (2.5 vs. 55 and 2.9 °C/W), and validated UIS ruggedness-making it optimal for high-density, high-reliability power stages.
Availability
SIR4608LDP-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive control, and battery load switch applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for SIR4608LDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIR4608LDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial equipment where low conduction and switching losses are critical.
FAQ
What is the maximum continuous drain current rating for SIR4608LDP-T1-GE3 at case temperature of 70 °C?
The SIR4608LDP-T1-GE3 supports a continuous drain current of 34.7 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating based on RthJC = 2.5 °C/W and TJ(max) = 150 °C. At ambient conditions, the usable current is lower and depends on PCB copper area and airflow.
Does SIR4608LDP-T1-GE3 require a gate driver IC for operation at 500 kHz?
Yes-the SIR4608LDP-T1-GE3 benefits from a dedicated gate driver IC at 500 kHz due to its 7 nC gate charge and need for fast, controlled turn-on/turn-off. A driver with ≥2 A peak sink/source capability and <1 Ω output impedance minimizes switching losses and prevents oscillation, especially given its 0.7–2.6 Ω intrinsic gate resistance.
Is SIR4608LDP-T1-GE3 suitable for use in automotive under-hood applications?
The SIR4608LDP-T1-GE3 operates across -55 to +150 °C junction temperature and meets AEC-Q101 stress test requirements per Vishay qualification reports. However, it is not officially AEC-Q101 certified; for automotive safety-critical under-hood use, consult Vishay's qualified automotive-grade equivalents such as SQ series devices.
How does the PowerPAK SO-8 package of SIR4608LDP-T1-GE3 improve thermal performance compared to standard SO-8?
The PowerPAK SO-8 package of SIR4608LDP-T1-GE3 exposes the drain paddle on the bottom surface, providing a direct thermal path to the PCB. This reduces RthJC to 2.5 °C/W (typ.)-over 5× better than standard SO-8-and allows >3× higher power dissipation before reaching TJ(max), enabling smaller heatsinks or no heatsink in many applications.
Can SIR4608LDP-T1-GE3 be used in parallel configurations for higher current handling?
Yes-SIR4608LDP-T1-GE3 exhibits positive RDS(on) temperature coefficient and matched threshold voltage distribution, making it suitable for paralleling. Designers must ensure symmetrical gate drive, identical PCB trace lengths, and shared source inductance mitigation (e.g., Kelvin source connections) to achieve balanced current sharing across multiple SIR4608LDP-T1-GE3 units.
SIR4608LDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.3A (Ta), 43.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 905 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR4608LDP-T1-GE3 FAQ
1.How can I place an order for SIR4608LDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR4608LDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR4608LDP-T1-GE3 reliable?
The price and inventory of SIR4608LDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR4608LDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR4608LDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR4608LDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR4608LDP-T1-GE3?
SIR4608LDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR4608LDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR4608LDP-T1-GE3?
For technical support, including SIR4608LDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR4608LDP-T1-GE3 requirements.
6.How does Aetrix verify that SIR4608LDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR4608LDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR4608LDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR4608LDP-T1-GE3?
All SIR4608LDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR4608LDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR4608LDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR4608LDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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