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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR460DP-T1-GE3

Name: SIR460DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR460DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR460DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR460DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SIR460DP-T1-GE3 from Vishay Siliconix is a N-channel 30-V TrenchFET® Gen III Power MOSFET in PowerPAK SO-8 package, delivering R_DS(on) = 4.7 mΩ at V_GS = 10 V and 6.1 mΩ at V_GS = 4.5 V, rated for 40 A continuous drain current (package-limited), and optimized for high-efficiency notebook Vcore and point-of-load DC/DC converters.

For engineers reviewing the SIR460DP-T1-GE3 datasheet, SIR460DP-T1-GE3 pinout, SIR460DP-T1-GE3 application, or SIR460DP-T1-GE3 equivalent, this page provides verified electrical parameters, thermal performance data, validated PowerPAK SO-8 mounting guidance, and real-world substitution options for synchronous buck topologies requiring low R_DS(on) and fast switching.

Technical Context

This MOSFET employs trench-gate silicon technology with 100 % R_g and avalanche testing, enabling robust operation under repetitive transient stress in synchronous rectification and high-frequency PWM control. Its gate charge profile (Q_g = 16.8 nC @ 4.5 V) supports efficient drive with standard gate drivers.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, achieving R_thJC = 2.1 °C/W (typ.) and matching DPAK-level thermal performance while retaining SO-8 footprint compatibility - critical for space-constrained notebook power stages where board area and junction temperature stability are tightly coupled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and 3.3/5/12-V output DC/DC stages.
R_DS(on) @ 10 V	4.7 mΩ - Enables <1 W conduction loss at 15 A, supporting high-current Vcore delivery with minimal thermal rise.
R_DS(on) @ 4.5 V	6.1 mΩ - Ensures reliable turn-on with logic-level gate drivers (e.g., integrated controller outputs), reducing driver complexity.
Q_g @ 4.5 V	16.8 nC - Low gate charge minimizes switching losses and driver power demand in 300–1000 kHz buck converters.
I_D (continuous)	40 A (T_C = 25 °C) - Package-limited rating enables high-current single-phase designs without paralleling devices.
R_thJC	2.1 °C/W (typ.) - Direct die-to-board thermal path allows effective heatsinking via PCB copper, reducing need for external thermal management.
Body diode t_rr	19–38 ns - Fast reverse recovery supports synchronous rectification with minimal shoot-through risk and reduced EMI.

Pinout & Package

PowerPAK SO-8 is a leadless, surface-mount package with 8 terminals arranged in standard SO-8 footprint (6.15 mm × 5.15 mm). The bottom-side drain pad is exposed copper for direct thermal coupling to PCB; gate, source, and drain terminals are accessible on top edge per standard layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain)	Drain connection (parallel internal terminals)	Seven pins tied internally to large bottom-side copper pad - primary current path and thermal interface; requires full-solder coverage for optimal R_thJA.
6 (Gate)	Control terminal	High-impedance input controlling channel conduction; low C_iss (2071 pF) eases drive design and reduces Miller-induced turn-off delay.
Source	Reference node for gate drive and current sensing	Terminal shared across pins 1–5 and 7–8 (source leads); used for Kelvin sensing in precision current monitoring applications.

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Enables ultra-low R_DS(on) and high cell density - delivers 40 A in SO-8 footprint without derating due to die size limits.
100 % R_g tested	Guarantees gate resistance ≤ 1.7 Ω, ensuring predictable turn-on timing and minimizing gate oscillation in high-dV/dt environments.
100 % avalanche tested	Validates ruggedness against inductive switching transients up to I_AS = 30 A and E_AS = 45 mJ - critical for unregulated input surges in notebook adapters.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - meets environmental requirements for consumer electronics without compromising thermal or electrical performance.
PowerPAK SO-8 package	Provides DPAK-equivalent R_thJC (2.1 °C/W) in SO-8 outline - eliminates redesign when upgrading from standard SO-8 MOSFETs in existing layouts.

Applications

High-Efficiency Notebook Vcore	Point-of-Load DC/DC Converter
Use Scenario: Primary high-side switch in 1–2 phase synchronous buck regulators powering CPU/GPU cores at 0.8–1.5 V, 20–40 A. IC Role / Device Role: Main power switch handling high pulsed current with minimal conduction and switching loss. Use Value: 4.7 mΩ R_DS(on) at 10 V reduces I²R loss by >30 % vs. legacy SO-8 MOSFETs, enabling higher efficiency (>92 %) at full load without forced airflow.	Use Scenario: Secondary-side synchronous rectifier in isolated or non-isolated buck converters for FPGA, ASIC, or memory rail regulation. IC Role / Device Role: Low-side switch operating at high duty cycle with fast body diode recovery. Use Value: 19 ns body diode t_rr minimizes reverse recovery loss and EMI, allowing stable operation at 500 kHz+ without snubbers.
Server VRM High-Current Phase	Industrial DC/DC Module
Use Scenario: Single-phase switch in compact 48-V input to 12-V intermediate bus converter for telecom or networking equipment. IC Role / Device Role: High-current, high-thermal-density switching element mounted directly to thick-copper PCB layers. Use Value: 2.1 °C/W R_thJC enables 40 A operation with <15 °C junction rise over board temperature - avoids thermal throttling in sealed enclosures.	Use Scenario: Input-stage switch in DIN-rail mounted 24-V to 5/3.3-V DC/DC modules for PLC and sensor interfaces. IC Role / Device Role: Robust main switch surviving repeated load dumps and cold cranking pulses. Use Value: 100 % avalanche testing ensures survival of 30-A transient surges (E_AS = 45 mJ), eliminating need for external TVS protection.

High-Efficiency Notebook Vcore

Point-of-Load DC/DC Converter

Use Scenario: Primary high-side switch in 1–2 phase synchronous buck regulators powering CPU/GPU cores at 0.8–1.5 V, 20–40 A.

IC Role / Device Role: Main power switch handling high pulsed current with minimal conduction and switching loss.

Use Value: 4.7 mΩ R_DS(on) at 10 V reduces I²R loss by >30 % vs. legacy SO-8 MOSFETs, enabling higher efficiency (>92 %) at full load without forced airflow.

Use Scenario: Secondary-side synchronous rectifier in isolated or non-isolated buck converters for FPGA, ASIC, or memory rail regulation.

IC Role / Device Role: Low-side switch operating at high duty cycle with fast body diode recovery.

Use Value: 19 ns body diode t_rr minimizes reverse recovery loss and EMI, allowing stable operation at 500 kHz+ without snubbers.

Server VRM High-Current Phase

Industrial DC/DC Module

Use Scenario: Single-phase switch in compact 48-V input to 12-V intermediate bus converter for telecom or networking equipment.

IC Role / Device Role: High-current, high-thermal-density switching element mounted directly to thick-copper PCB layers.

Use Value: 2.1 °C/W R_thJC enables 40 A operation with <15 °C junction rise over board temperature - avoids thermal throttling in sealed enclosures.

Use Scenario: Input-stage switch in DIN-rail mounted 24-V to 5/3.3-V DC/DC modules for PLC and sensor interfaces.

IC Role / Device Role: Robust main switch surviving repeated load dumps and cold cranking pulses.

Use Value: 100 % avalanche testing ensures survival of 30-A transient surges (E_AS = 45 mJ), eliminating need for external TVS protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR462DP-T1-GE3	Same PowerPAK SO-8 package; R_DS(on) = 5.2 mΩ @ 10 V (vs. 4.7 mΩ); Q_g = 18.5 nC @ 4.5 V (vs. 16.8 nC).	Slightly higher conduction loss; suitable where margin exists in thermal budget but identical layout and drive requirements.	Select SiR462DP-T1-GE3 only if lower cost is prioritized and 0.5 mΩ R_DS(on) increase is acceptable in final thermal validation.
IRLHS6342TRPBF	SO-8 package; R_DS(on) = 5.8 mΩ @ 4.5 V; Q_g = 15.5 nC; R_thJC = 3.5 °C/W (vs. 2.1 °C/W).	Higher thermal resistance limits usable current in thermally constrained designs; no avalanche rating specified.	Choose IRLHS6342TRPBF only for low-power (<15 A) applications where board-level heatsinking is sufficient and avalanche immunity is not required.

Compared with SIR460DP-T1-GE3, SiR462DP-T1-GE3 trades minimal R_DS(on) increase for cost, while IRLHS6342TRPBF sacrifices thermal performance and ruggedness for broader distributor availability - making SIR460DP-T1-GE3 the optimal choice for thermally demanding, high-reliability notebook and server power stages.

Availability

SIR460DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook Vcore, point-of-load DC/DC, and industrial power module applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIR460DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR460DP product line belongs to Vishay's TrenchFET® Gen III Power MOSFET family, designed specifically for high-current, high-frequency DC/DC conversion in space- and thermally-constrained computing and communications systems.

FAQ

What is the maximum continuous drain current rating for SIR460DP-T1-GE3?

The SIR460DP-T1-GE3 is rated for 40 A continuous drain current at T_C = 25 °C, limited by package thermal capacity rather than silicon capability. At T_C = 70 °C, the rating remains 40 A, but at T_A = 25 °C it drops to 24.3 A due to ambient-limited power dissipation. This package-limited rating is confirmed in the Absolute Maximum Ratings table of Vishay document 69095.

Does SIR460DP-T1-GE3 support logic-level gate drive?

Yes, SIR460DP-T1-GE3 is fully compatible with logic-level gate drive: its R_DS(on) is specified at 6.1 mΩ with V_GS = 4.5 V, and gate threshold voltage V_GS(th) ranges from 1.0 V to 2.4 V. This ensures robust turn-on using standard 3.3-V or 5-V controller outputs without level-shifting circuitry.

Is SIR460DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SIR460DP-T1-GE3 uses the PowerPAK SO-8 package, which maintains identical footprint, pin count, and pinout as the standard SO-8 - including drain (pins 1–5, 7–8), source (shared), and gate (pin 6). Vishay explicitly states it can be substituted directly onto existing SO-8 land patterns, though full thermal benefit requires optimized drain pad layout.

What thermal performance advantage does SIR460DP-T1-GE3 offer over standard SO-8 MOSFETs?

SIR460DP-T1-GE3 achieves R_thJC = 2.1 °C/W (typ.), matching DPAK performance and improving ~8× over standard SO-8 (16 °C/W). In a 105 °C board environment dissipating 2.7 W, junction temperature rises only 2 °C above board temperature - versus 43 °C for standard SO-8 - directly preserving R_DS(on) and enabling higher sustained current.

Does SIR460DP-T1-GE3 include avalanche ruggedness certification?

Yes, SIR460DP-T1-GE3 undergoes 100 % single-pulse avalanche testing per Vishay specification, with rated I_AS = 30 A (L = 0.1 mH) and E_AS = 45 mJ. This validated ruggedness ensures reliable operation during inductive switching events common in notebook adapter inputs and VRM load transients.

SIR460DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2071 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR460DP-T1-GE3 FAQ

1.How can I place an order for SIR460DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR460DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR460DP-T1-GE3 reliable?

The price and inventory of SIR460DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR460DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR460DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR460DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR460DP-T1-GE3?

SIR460DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR460DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR460DP-T1-GE3?

For technical support, including SIR460DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR460DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR460DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR460DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR460DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR460DP-T1-GE3?

All SIR460DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR460DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR460DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR460DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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