Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR464DP-T1-GE3

Name: SIR464DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR464DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR464DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR464DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,845

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR464DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 50 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.0031 Ω at V_GS = 10 V, and Q_g = 26.5 nC (typ.) at V_GS = 4.5 V. It serves as a high-efficiency low-side switch in DC/DC converters for notebook and server power stages.

For engineers reviewing the SIR464DP-T1-GE3 datasheet, SIR464DP-T1-GE3 pinout, SIR464DP-T1-GE3 application, or SIR464DP-T1-GE3 equivalent, key selection criteria include its 30-V V_DS, ultra-low R_DS(on) at 4.5-V drive, 100% R_g and UIS tested reliability, thermal performance matching DPAK, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for synchronous buck converter low-side operation. Its gate charge profile supports fast switching with t_d(on) = 18 ns and t_f = 9 ns (V_GEN = 10 V), while body diode characteristics (V_SD = 0.72 V at I_S = 3 A, t_rr = 33 ns) enable efficient freewheeling in hard-switched topologies.

The device features a leadless PowerPAK SO-8 package with exposed drain pad for direct thermal conduction to PCB copper. Its R_thJC = 1.2 °C/W (typ.) enables high-power density designs, and it is rated for operation from –55 °C to +150 °C junction temperature with ±20-V gate-source voltage tolerance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and 12-V output stages in point-of-load converters.
R_DS(on)	0.0031 Ω at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current CPU/GPU VRMs.
I_D (cont.)	50 A at T_C = 25 °C - Package-limited current rating suitable for multi-phase low-side switching in servers.
Q_g	26.5 nC at V_GS = 4.5 V - Low gate charge allows efficient drive from standard PWM controllers without external buffers.
R_thJC	1.2 °C/W (typ.) - Thermal resistance equivalent to DPAK, enabling high-power dissipation on compact PCBs with minimal heatsinking.
V_GS(th)	1.2–2.5 V - Ensures robust turn-on with 3.3-V or 5-V gate drivers and immunity to noise-induced false triggering.
E_AS	80 mJ - Avalanche energy rating supports reliable operation under inductive load switching stress and transient overcurrent events.

Pinout & Package

PowerPAK SO-8 is a leadless surface-mount package with 8 terminals arranged in standard SO-8 footprint (6.15 mm × 5.15 mm), featuring an exposed bottom-side drain pad for enhanced thermal transfer. Pin 1 is Gate, Pins 2–4 and 6–8 are Source, and Pins 5 and 7 are Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; requires <2.2 Ω gate resistance to limit ringing per datasheet.
2,3,4,6,8 (S)	Source	Power return path; all five pins internally connected to source metallization for low-inductance grounding in high-dI/dt applications.
5,7 (D)	Drain	Main power input; dual-drain layout distributes current and reduces package inductance; connects directly to PCB copper pour for thermal management.

Key Features

Feature	Design Value
TrenchFET® Technology	Enables ultra-low R_DS(on) at 4.5-V gate drive, supporting efficient operation with modern 3.3-V or 5-V controller outputs.
100% R_g and UIS Tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world converter layouts.
PowerPAK SO-8 Package	Matches standard SO-8 footprint while delivering DPAK-level thermal performance (R_thJC = 1.2 °C/W) and lower profile.
Halogen-Free & RoHS Compliant	Fulfills environmental compliance requirements for notebook, server, and industrial end equipment without performance trade-offs.
Body Diode t_rr = 33 ns	Minimizes reverse recovery losses during synchronous rectification transitions, improving efficiency in high-frequency buck converters.

Applications

Server VRM Low-Side Switch	Notebook CPU Core Power
Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to dual-socket Xeon processors. IC Role / Device Role / Timing Role: Low-side power switch conducting up to 50 A continuously, synchronized to high-side FET with 500-kHz–1-MHz switching frequency. Use Value: 0.0031 Ω R_DS(on) at 10 V reduces conduction loss by >35% versus legacy SO-8 MOSFETs, enabling higher efficiency at 12-V input and 0.8-V output.	Use Scenario: Compact, thermally constrained 3-phase VRM powering mobile Intel Core i7/i9 CPUs in ultrabooks. IC Role / Device Role / Timing Role: Low-side switch operating with 4.5-V gate drive from integrated PWM controller, handling peak currents >30 A per phase. Use Value: 26.5 nC Q_g at 4.5 V ensures fast turn-on/off with minimal gate driver loading, reducing switching loss and enabling 1-MHz+ operation within thermal limits.
DC/DC POL Converter	GPU Power Delivery Module
Use Scenario: Point-of-load regulator converting 5 V or 12 V to sub-1 V for FPGA or ASIC logic supplies in telecom infrastructure. IC Role / Device Role / Timing Role: Low-side FET in multiphase buck topology, switching at ≥1 MHz with tight duty-cycle control. Use Value: R_thJC = 1.2 °C/W allows full 50-A rating with only 2 oz copper and moderate board area-no external heatsink required.	Use Scenario: High-density GPU power stage in gaming laptops or AI edge accelerators requiring >100 A total output current. IC Role / Device Role / Timing Role: Low-side switch in 4- or 6-phase interleaved buck, managing rapid load transients with minimal voltage droop. Use Value: 80 mJ E_AS withstands repetitive inductive kickback during dynamic load steps, ensuring long-term reliability without snubbers.

Server VRM Low-Side Switch

Notebook CPU Core Power

Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: Low-side power switch conducting up to 50 A continuously, synchronized to high-side FET with 500-kHz–1-MHz switching frequency.

Use Value: 0.0031 Ω R_DS(on) at 10 V reduces conduction loss by >35% versus legacy SO-8 MOSFETs, enabling higher efficiency at 12-V input and 0.8-V output.

Use Scenario: Compact, thermally constrained 3-phase VRM powering mobile Intel Core i7/i9 CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Low-side switch operating with 4.5-V gate drive from integrated PWM controller, handling peak currents >30 A per phase.

Use Value: 26.5 nC Q_g at 4.5 V ensures fast turn-on/off with minimal gate driver loading, reducing switching loss and enabling 1-MHz+ operation within thermal limits.

DC/DC POL Converter

GPU Power Delivery Module

Use Scenario: Point-of-load regulator converting 5 V or 12 V to sub-1 V for FPGA or ASIC logic supplies in telecom infrastructure.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck topology, switching at ≥1 MHz with tight duty-cycle control.

Use Value: R_thJC = 1.2 °C/W allows full 50-A rating with only 2 oz copper and moderate board area-no external heatsink required.

Use Scenario: High-density GPU power stage in gaming laptops or AI edge accelerators requiring >100 A total output current.

IC Role / Device Role / Timing Role: Low-side switch in 4- or 6-phase interleaved buck, managing rapid load transients with minimal voltage droop.

Use Value: 80 mJ E_AS withstands repetitive inductive kickback during dynamic load steps, ensuring long-term reliability without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR462DP-T1-GE3	R_DS(on) = 0.0038 Ω at V_GS = 4.5 V (vs. 0.0031 Ω); same package, pinout, and V_DS.	Higher conduction loss at low gate drive; suitable where 4.5-V drive margin is sufficient and cost optimization is prioritized.	Select SiR462DP-T1-GE3 only if system efficiency targets allow ~22% higher I²R loss at 10-A load.
SiR466DP-T1-GE3	R_DS(on) = 0.0026 Ω at V_GS = 10 V (vs. 0.0031 Ω); identical thermal specs and footprint.	Lower R_DS(on) improves conduction efficiency but increases Q_g to 32 nC, raising switching loss at high frequencies.	Choose SiR466DP-T1-GE3 when conduction loss dominates (e.g., <500 kHz operation) and gate drive capability supports higher Q_g.

Compared with SIR464DP-T1-GE3, SiR462DP-T1-GE3 trades lower cost for higher R_DS(on) at 4.5 V, while SiR466DP-T1-GE3 delivers lower conduction loss at the expense of increased gate charge-making SIR464DP-T1-GE3 the balanced choice for 4.5–10 V drive, 500 kHz–1 MHz operation, and thermal-constrained server/notebook designs.

Availability

SIR464DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power delivery, and high-density DC/DC POL converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIR464DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SiR464DP belongs to Vishay's TrenchFET® PowerPAK SO-8 family, engineered specifically for high-current, high-frequency low-side switching in computing and communications power systems where thermal density and gate drive compatibility are critical.

FAQ

What is the maximum continuous drain current rating for SIR464DP-T1-GE3 at 70 °C case temperature?

The SIR464DP-T1-GE3 supports 50 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value due to the PowerPAK SO-8's superior thermal design, unlike conventional SO-8 devices that derate significantly above 25 °C. The 50-A rating applies under steady-state conditions with proper PCB copper thermal management.

Does SIR464DP-T1-GE3 support 3.3-V gate drive in practical applications?

Yes, SIR464DP-T1-GE3 is fully compatible with 3.3-V gate drive. Its V_GS(th) range of 1.2–2.5 V ensures reliable turn-on, and R_DS(on) = 0.0038 Ω at V_GS = 4.5 V (and 0.0031 Ω at 10 V) confirms strong enhancement-mode behavior at low voltages. Real-world designs using 3.3-V controllers achieve <5 mΩ effective on-resistance with appropriate layout and thermal design, making SIR464DP-T1-GE3 suitable for logic-level drive architectures.

How does the PowerPAK SO-8 package of SIR464DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?

The PowerPAK SO-8 package in SIR464DP-T1-GE3 delivers R_thJC = 1.2 °C/W (typ.), matching DPAK performance and offering ~13× better junction-to-case thermal resistance than a standard SO-8 (16 °C/W). When mounted on the same PCB, this reduces die temperature rise by ~40 °C at 2.7 W dissipation-keeping R_DS(on) stable and enabling higher current handling without heatsinks. The exposed drain pad provides direct thermal conduction to PCB copper, unlike leaded SO-8 packages.

Is SIR464DP-T1-GE3 pin-compatible with standard SO-8 footprints?

Yes, SIR464DP-T1-GE3 uses the PowerPAK SO-8 package, which maintains identical outline dimensions (6.15 mm × 5.15 mm), pin count (8), and pin spacing (1.27 mm) as the standard SO-8. Its pinout (G-S-S-S-D-S-D-S) aligns with industry-standard SO-8 low-side MOSFET layouts, allowing drop-in replacement on existing boards-though optimal thermal performance requires extending the drain pad copper area per Vishay Application Note AN821.

What is the typical total gate charge (Q_g) of SIR464DP-T1-GE3 at 4.5-V gate drive, and why does it matter?

The typical total gate charge (Q_g) of SIR464DP-T1-GE3 is 26.5 nC at V_GS = 4.5 V and V_DS = 15 V. This low Q_g minimizes gate driver power consumption and switching transition time, enabling efficient operation at high frequencies (≥1 MHz) without excessive gate drive strength. In server VRMs, it reduces driver IC stress and allows use of integrated controller FET drivers instead of external buffers-simplifying BOM and layout.

SIR464DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3545 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR464DP-T1-GE3 FAQ

1.How can I place an order for SIR464DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR464DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR464DP-T1-GE3 reliable?

The price and inventory of SIR464DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR464DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR464DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR464DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR464DP-T1-GE3?

SIR464DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR464DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR464DP-T1-GE3?

For technical support, including SIR464DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR464DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR464DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR464DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR464DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR464DP-T1-GE3?

All SIR464DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR464DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR464DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR464DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …