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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR468DP-T1-GE3

Name: SIR468DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR468DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR468DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR468DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SIR468DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 40 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.0057 Ω at V_GS = 10 V, and 13.8 nC total gate charge - optimized for low-side switching in notebook DC/DC converters.

For engineers reviewing the SIR468DP-T1-GE3 datasheet, SIR468DP-T1-GE3 pinout, SIR468DP-T1-GE3 application, or SIR468DP-T1-GE3 equivalent, key selection criteria include thermal performance (R_thJC = 2.0 °C/W), lead-free/halogen-free compliance, 100 % R_g and UIS testing, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics. Its gate charge profile (Q_g = 13.8 nC at V_GS = 4.5 V) and low Crss (130 pF) support high-efficiency synchronous rectification in compact DC/DC stages.

The device operates with V_GS(th) = 1–3 V and exhibits robust avalanche capability (E_AS = 61 mJ), enabling reliable operation under transient overloads. Its PowerPAK SO-8 package features exposed drain pad for direct thermal conduction to PCB copper, achieving junction-to-case thermal resistance of 2.0 °C/W - matching DPAK-level performance in SO-8 footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transients in notebook power systems.
R_DS(on) @ 10 V	0.0057 Ω - enables <1.1 W conduction loss at 20 A, critical for thermally constrained laptop VRMs.
I_D (continuous)	40 A @ T_C = 25 °C - package-limited current handling suitable for high-current CPU/GPU core rails.
Q_g @ 4.5 V	13.8 nC - minimizes drive power and switching losses in 3.3 V/5 V gate-drive environments.
R_thJC	2.0 °C/W - enables efficient heat transfer from die to PCB, allowing >32 W power dissipation at T_C = 70 °C.
V_GS(th)	1–3 V - ensures full enhancement with standard logic-level gate drivers without level-shifting.
E_AS	61 mJ - provides ruggedness against inductive switching stress in synchronous buck output stages.

Pinout & Package

PowerPAK SO-8 (leadless, surface-mount) with 6.15 mm × 5.15 mm footprint, identical to standard SO-8 pinout and land pattern. Exposed drain pad on bottom provides primary thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low input capacitance (C_iss = 1720 pF) reduces driver loading.
2 (S)	Source	Reference node for gate drive; tied to power ground plane in low-side configuration.
3 (S)	Source	Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching stability.
4 (S)	Source	Third source connection; further lowers source loop inductance for high di/dt applications.
5 (D)	Drain	Main power output node; connected to exposed bottom pad for thermal and current conduction.
6 (D)	Drain	Secondary drain connection; shares current with Pin 5 and bottom pad to minimize resistance.
7 (D)	Drain	Third drain connection; enhances current sharing and thermal spreading across package.
8 (D)	Drain	Fourth drain connection; completes quad-drain topology for lowest possible R_DS(on) and thermal impedance.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.0057 Ω R_DS(on) in SO-8 footprint - 40 % lower than typical planar MOSFETs at same voltage rating.
100 % R_g tested	Guarantees gate resistance ≤ 2.2 Ω, ensuring consistent turn-on timing and reduced gate oscillation risk.
100 % UIS tested	Validates unclamped inductive switching robustness to 35 A avalanche current, eliminating need for external snubbers.
Halogen-free & Pb-free	Meets IPC-J-STD-609A Class 1 and RoHS Directive 2011/65/EU requirements for eco-compliant designs.
PowerPAK SO-8 package	Delivers DPAK-equivalent thermal performance (R_thJC = 2.0 °C/W) in SO-8 board area - no layout change required.

Applications

Notebook CPU Core VRM	Ultrabook GPU Power Stage
Use Scenario: High-frequency synchronous buck converter supplying 0.8–1.3 V at up to 40 A to Intel/AMD mobile processors. IC Role / Device Role: Low-side synchronous rectifier, operating in continuous conduction mode with 500 kHz–1 MHz switching. Use Value: 0.0057 Ω R_DS(on) cuts conduction loss by >35 % vs. legacy SO-8 MOSFETs, enabling 95 %+ efficiency at full load.	Use Scenario: Dual-phase 12 V input → 0.9 V output converter powering discrete or integrated graphics in thin-and-light platforms. IC Role / Device Role: Secondary-side switch in multiphase buck stage, driven by dedicated gate controller. Use Value: 13.8 nC Q_g at 4.5 V allows clean switching with low-power gate drivers, reducing driver IC count and BOM cost.
Industrial DC/DC Module	Embedded Computing Power Supply
Use Scenario: 24 V input → 5 V/3.3 V isolated or non-isolated converter in programmable logic controllers or motor drives. IC Role / Device Role: Low-side switch in secondary-side synchronous rectification circuit. Use Value: 61 mJ E_AS withstands repetitive inductive kickback from transformer leakage energy without derating.	Use Scenario: Compact 12 V → 1.8 V point-of-load regulator on COM Express or SMARC modules. IC Role / Device Role: High-current, low-R_DS(on) switch in space-constrained VRM layout. Use Value: PowerPAK SO-8's 1.04 mm height enables stacking under heatsinks or adjacent components, saving vertical real estate.

Notebook CPU Core VRM

Ultrabook GPU Power Stage

Use Scenario: High-frequency synchronous buck converter supplying 0.8–1.3 V at up to 40 A to Intel/AMD mobile processors.

IC Role / Device Role: Low-side synchronous rectifier, operating in continuous conduction mode with 500 kHz–1 MHz switching.

Use Value: 0.0057 Ω R_DS(on) cuts conduction loss by >35 % vs. legacy SO-8 MOSFETs, enabling 95 %+ efficiency at full load.

Use Scenario: Dual-phase 12 V input → 0.9 V output converter powering discrete or integrated graphics in thin-and-light platforms.

IC Role / Device Role: Secondary-side switch in multiphase buck stage, driven by dedicated gate controller.

Use Value: 13.8 nC Q_g at 4.5 V allows clean switching with low-power gate drivers, reducing driver IC count and BOM cost.

Industrial DC/DC Module

Embedded Computing Power Supply

Use Scenario: 24 V input → 5 V/3.3 V isolated or non-isolated converter in programmable logic controllers or motor drives.

IC Role / Device Role: Low-side switch in secondary-side synchronous rectification circuit.

Use Value: 61 mJ E_AS withstands repetitive inductive kickback from transformer leakage energy without derating.

Use Scenario: Compact 12 V → 1.8 V point-of-load regulator on COM Express or SMARC modules.

IC Role / Device Role: High-current, low-R_DS(on) switch in space-constrained VRM layout.

Use Value: PowerPAK SO-8's 1.04 mm height enables stacking under heatsinks or adjacent components, saving vertical real estate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR462DP-T1-GE3	R_DS(on) = 0.0072 Ω @ 10 V; Q_g = 12.3 nC; same PowerPAK SO-8 package.	Slightly higher conduction loss but lower gate charge - better for higher-frequency, lower-current operation.	Select when optimizing for 1–2 MHz switching with <30 A load current and tighter gate drive constraints.
IRLHS6242PBF	R_DS(on) = 0.0055 Ω @ 10 V; Q_g = 15.5 nC; PQFN 3.3 × 3.3 mm package (smaller footprint, higher thermal resistance).	Smaller size but R_thJC = 3.5 °C/W - requires more aggressive PCB copper for equivalent thermal performance.	Select only when board area is severely constrained and thermal budget allows higher junction temperature rise.

Compared with SiR462DP-T1-GE3, SIR468DP-T1-GE3 offers lower R_DS(on) for higher-current DC/DC stages; compared with IRLHS6242PBF, it trades smaller footprint for superior thermal conduction and proven reliability in high-power notebook applications.

Availability

SIR468DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, ultrabook GPU power stages, and industrial embedded power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIR468DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiR468DP product line is engineered for high-efficiency, high-current synchronous rectification in portable computing and industrial DC/DC applications - emphasizing low R_DS(on), fast switching, and rugged thermal packaging.

FAQ

What is the maximum continuous drain current for SIR468DP-T1-GE3 at 70 °C case temperature?

The SIR468DP-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area for thermal conduction - not ambient-temperature derated. The device maintains this current capability due to its 2.0 °C/W R_thJC and PowerPAK SO-8's exposed drain pad design.

Is SIR468DP-T1-GE3 compatible with standard SO-8 PCB footprints?

Yes, SIR468DP-T1-GE3 uses the PowerPAK SO-8 package, which has identical pinout, dimensions, and land pattern compatibility with standard SO-8. Vishay explicitly states it can be mounted to existing SO-8 layouts without modification. The extended drain pad contacts the same copper area, and no PCB redesign is needed - though maximizing thermal performance requires appropriate drain copper area per Application Note AN821.

Does SIR468DP-T1-GE3 require special reflow soldering profiles?

Yes - SIR468DP-T1-GE3 is a lead-free, halogen-free component requiring Pb-free reflow. The peak temperature must not exceed 255 °C, with time above 217 °C limited to 60–150 s. Vishay specifies this in document 73257. Manual soldering with an iron is not recommended due to the leadless construction and thermal mass of the exposed drain pad.

What is the gate threshold voltage range for SIR468DP-T1-GE3?

The gate-source threshold voltage (V_GS(th)) for SIR468DP-T1-GE3 is 1.0 V to 3.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 µA. This logic-level range ensures full enhancement with 3.3 V or 5 V gate drivers, making it suitable for direct interfacing with PWM controllers without level shifters.

How does the avalanche energy rating of SIR468DP-T1-GE3 impact system reliability?

SIR468DP-T1-GE3 is rated for 61 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This specification validates its ability to absorb inductive energy during hard-switching events - such as MOSFET turn-off with freewheeling current - without failure. In notebook VRMs, this eliminates need for external avalanche-rated snubbers and improves long-term reliability under transient overload conditions.

SIR468DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1720 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR468DP-T1-GE3 FAQ

1.How can I place an order for SIR468DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR468DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR468DP-T1-GE3 reliable?

The price and inventory of SIR468DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR468DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR468DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR468DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR468DP-T1-GE3?

SIR468DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR468DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR468DP-T1-GE3?

For technical support, including SIR468DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR468DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR468DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR468DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR468DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR468DP-T1-GE3?

All SIR468DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR468DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR468DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR468DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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