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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR472DP-T1-GE3

Name: SIR472DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR472DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR472DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR472DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK SO-8

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Product details

Overview

SIR472DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers R_DS(on) = 0.012 Ω at V_GS = 10 V, 6.8 nC total gate charge, and 20 A continuous drain current (T_J = 150 °C, package-limited), enabling high-efficiency DC-DC conversion.

For engineers reviewing the SIR472DP-T1-GE3 datasheet, SIR472DP-T1-GE3 pinout, SIR472DP-T1-GE3 application, or SIR472DP-T1-GE3 equivalent, this page provides verified technical context, thermal performance data, validated alternative options, and design-critical package interface details for notebook VRM and point-of-load regulator integration.

Technical Context

This MOSFET employs trench-gate silicon technology with halogen-free construction and is 100 % R_g and UIS tested. Its low 3.5 °C/W junction-to-case thermal resistance and exposed-drain PowerPAK® SO-8 footprint enable direct thermal coupling to PCB copper, supporting high-current, high-frequency switching in compact form factors.

The device features a gate threshold voltage of 1.2–2.5 V, body diode reverse recovery time of 15–30 ns (I_F = 11 A, dI/dt = 100 A/µs), and dynamic parameters including C_iss = 820 pF and Q_gd = 2.3 nC - all specified at V_DS = 15 V - making it suitable for synchronous buck topologies requiring fast turn-on/turn-off control and low conduction loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 5 V and 12 V input rails in notebook CPU core supplies.
R_DS(on)	0.012 Ω at V_GS = 10 V - Enables <1.2 W conduction loss at 10 A, critical for thermally constrained mobile VRMs.
Q_g	6.8 nC at V_GS = 5 V - Low gate charge supports efficient drive from standard PWM controllers without external gate drivers.
I_D (continuous)	20 A at T_C = 25 °C - Package-limited rating ensures safe operation under high-current transient loads typical in CPU load-line regulation.
R_thJC	3.5 °C/W (typical) - Enables direct heat transfer from die to PCB, reducing junction temperature rise by ~40 °C vs. standard SO-8 in identical layouts.
V_GS(th)	1.2–2.5 V - Compatible with 3.3 V and 5 V gate drive, ensuring reliable enhancement-mode turn-on in high-side configurations.
t_rr	15–30 ns - Fast body diode recovery minimizes shoot-through risk and reduces switching losses during dead-time intervals.

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with same 6.15 mm × 5.15 mm footprint and pinout as standard SO-8, but with exposed drain pad on bottom for enhanced thermal conduction. Height is 1.07 mm - ideal for ultra-thin notebook designs.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain)	Drain (D)	Seven pins tied internally to large exposed copper drain pad - primary thermal path and high-current output node in high-side switch configuration.
6 (Source)	Source (S)	Single-source terminal - connects to power ground plane; defines reference for gate drive and current sensing in synchronous rectifier mode.
3 (Gate)	Gate (G)	Control input - requires low-impedance drive due to 0.36–3.6 Ω gate resistance; layout must minimize inductance to suppress ringing during 8–24 ns turn-on delay.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.012 Ω R_DS(on) in PowerPAK SO-8 - 3× lower on-resistance than comparable SO-8 MOSFETs, directly improving VRM efficiency.
Optimized for high-side synchronous rectification	Low Q_gd/Q_g ratio (2.3/6.8 ≈ 0.34) enables clean turn-on with minimal Miller-induced delay, critical for precise timing control in high-frequency buck converters.
100 % R_g tested	Guarantees gate resistance between 0.36 Ω and 3.6 Ω - ensures predictable gate drive strength and consistent switching speed across production lots.
100 % UIS tested	Validated avalanche energy rating of 24 mJ - protects against inductive switching transients in unregulated or fault conditions without derating.
Halogen-free & RoHS-compliant	Meets IPC-4101D/93 and JEDEC J-STD-020D reflow profiles - supports lead-free assembly up to 260 °C peak without reliability degradation.

Applications

High-Side Synchronous Rectifier in Notebook CPU Core VRM	Point-of-Load DC-DC Converter for GPU Power Rail
Use Scenario: High-frequency (300–1000 kHz) buck converter supplying dynamic CPU core voltage (0.7–1.5 V) with >100 A peak current. IC Role / Device Role / Timing Role: High-side switch controlling power delivery; operates in hard-switched synchronous mode with precise gate timing relative to low-side FET. Use Value: 0.012 Ω R_DS(on) and 6.8 nC Q_g reduce conduction and switching losses, enabling >92 % efficiency at 50 A while maintaining <1.07 mm profile.	Use Scenario: Compact, thermally constrained DC-DC stage powering discrete GPU with rapid load transients (0–50 A in <1 µs). IC Role / Device Role / Timing Role: High-side power switch managing input-to-output voltage conversion; coordinated with controller IC for adaptive duty cycle and phase control. Use Value: 3.5 °C/W R_thJC and exposed drain pad allow direct thermal coupling to internal copper layers, limiting ΔT_J to <15 °C above board temperature during 40 A pulses.
Hot-Swap Controller Protection Circuit	Industrial 24 V Input Buck Regulator
Use Scenario: Inrush current limiting and overcurrent protection for hot-pluggable modules in embedded computing systems. IC Role / Device Role / Timing Role: Controlled turn-on switch placed between input supply and downstream bus; driven via linear or PWM-controlled gate bias. Use Value: 30 V V_DS rating and 22 A single-pulse avalanche current support safe operation during capacitive load surges without external clamping.	Use Scenario: Fixed 5 V or 3.3 V output buck regulator in industrial HMIs or PLC I/O modules powered from 24 V nominal rail. IC Role / Device Role / Timing Role: Primary high-side power switch in isolated or non-isolated step-down topology; selected for robustness under wide ambient temperature range (−40 to +85 °C). Use Value: −55 to +150 °C operating junction range and 100 % UIS testing ensure long-term reliability in unventilated enclosures with limited airflow.

High-Side Synchronous Rectifier in Notebook CPU Core VRM

Point-of-Load DC-DC Converter for GPU Power Rail

Use Scenario: High-frequency (300–1000 kHz) buck converter supplying dynamic CPU core voltage (0.7–1.5 V) with >100 A peak current.

IC Role / Device Role / Timing Role: High-side switch controlling power delivery; operates in hard-switched synchronous mode with precise gate timing relative to low-side FET.

Use Value: 0.012 Ω R_DS(on) and 6.8 nC Q_g reduce conduction and switching losses, enabling >92 % efficiency at 50 A while maintaining <1.07 mm profile.

Use Scenario: Compact, thermally constrained DC-DC stage powering discrete GPU with rapid load transients (0–50 A in <1 µs).

IC Role / Device Role / Timing Role: High-side power switch managing input-to-output voltage conversion; coordinated with controller IC for adaptive duty cycle and phase control.

Use Value: 3.5 °C/W R_thJC and exposed drain pad allow direct thermal coupling to internal copper layers, limiting ΔT_J to <15 °C above board temperature during 40 A pulses.

Hot-Swap Controller Protection Circuit

Industrial 24 V Input Buck Regulator

Use Scenario: Inrush current limiting and overcurrent protection for hot-pluggable modules in embedded computing systems.

IC Role / Device Role / Timing Role: Controlled turn-on switch placed between input supply and downstream bus; driven via linear or PWM-controlled gate bias.

Use Value: 30 V V_DS rating and 22 A single-pulse avalanche current support safe operation during capacitive load surges without external clamping.

Use Scenario: Fixed 5 V or 3.3 V output buck regulator in industrial HMIs or PLC I/O modules powered from 24 V nominal rail.

IC Role / Device Role / Timing Role: Primary high-side power switch in isolated or non-isolated step-down topology; selected for robustness under wide ambient temperature range (−40 to +85 °C).

Use Value: −55 to +150 °C operating junction range and 100 % UIS testing ensure long-term reliability in unventilated enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR476DP-T1-GE3	R_DS(on) = 0.0075 Ω @ 10 V (lower), Q_g = 10.2 nC (higher), same PowerPAK SO-8 package and 30 V rating.	Better conduction loss at high current, but higher gate drive demand; suited for fixed-frequency >500 kHz designs where gate driver capability exists.	Select SiR476DP-T1-GE3 when optimizing for <0.8 W conduction loss at 12 A, accepting increased gate drive complexity.
SiR872DP-T1-GE3	R_DS(on) = 0.0045 Ω @ 10 V (much lower), Q_g = 15 nC, same package and voltage rating; higher cost and tighter gate drive requirements.	Targeted at ultra-high-efficiency server VRMs; overqualified for notebook use where thermal margin and cost are prioritized.	Choose SIR472DP-T1-GE3 over SiR872DP-T1-GE3 when balancing efficiency, thermal management simplicity, and BOM cost in consumer mobile platforms.

Compared with SiR476DP-T1-GE3 and SiR872DP-T1-GE3, the SIR472DP-T1-GE3 offers optimal trade-off between gate charge (6.8 nC), on-resistance (0.012 Ω), and thermal resistance (3.5 °C/W) - making it the preferred choice for space-constrained, cost-sensitive notebook CPU core regulators requiring stable performance across −55 to +150 °C.

Availability

SIR472DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, GPU point-of-load converters, hot-swap protection circuits, and industrial 24 V buck regulators requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for SIR472DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR472DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, high-frequency synchronous rectification in portable computing and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIR472DP-T1-GE3?

The SIR472DP-T1-GE3 has a continuous drain current rating of 20 A at T_C = 25 °C and 11 A at T_C = 70 °C, limited by package thermal capacity. This rating is confirmed in the Absolute Maximum Ratings table (Document #68897, Rev. C) and applies under steady-state conditions with proper PCB copper area per Application Note AN821.

Does SIR472DP-T1-GE3 support lead-free reflow soldering?

Yes, SIR472DP-T1-GE3 is qualified for lead-free reflow with a peak temperature of 260 °C (per JEDEC J-STD-020D). The device meets Vishay's Pb-free and halogen-free specifications, and its PowerPAK® SO-8 package is designed for compatibility with standard reflow profiles including ramp-up ≤3 °C/s and time above 217 °C of 60–150 s.

What is the gate threshold voltage range for SIR472DP-T1-GE3?

The gate threshold voltage (V_GS(th)) for SIR472DP-T1-GE3 is specified as 1.2 V (minimum) to 2.5 V (maximum) at V_DS = V_GS and I_D = 250 µA. This range ensures reliable turn-on with 3.3 V or 5 V gate drive while maintaining noise immunity in high-speed digital environments typical of notebook VRMs.

How does the thermal performance of SIR472DP-T1-GE3 compare to standard SO-8 MOSFETs?

SIR472DP-T1-GE3 achieves a typical junction-to-case thermal resistance (R_thJC) of 3.5 °C/W - approximately 4.5× better than standard SO-8 packages (~16 °C/W). This is enabled by its exposed-drain PowerPAK® SO-8 construction, which allows direct thermal conduction to PCB copper, reducing junction temperature rise by up to 43 °C under identical 2.7 W dissipation conditions.

Is SIR472DP-T1-GE3 suitable for high-side synchronous rectifier applications?

Yes, SIR472DP-T1-GE3 is explicitly optimized for high-side synchronous rectifier operation, as stated in its official features list and product summary. Its low Q_gd/Q_g ratio, fast body diode recovery (t_rr = 15–30 ns), and 100 % UIS testing make it well-suited for high-frequency buck converters in notebook CPU core power stages where precise timing and avalanche robustness are essential.

SIR472DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR472DP-T1-GE3 FAQ

1.How can I place an order for SIR472DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR472DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR472DP-T1-GE3 reliable?

The price and inventory of SIR472DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR472DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR472DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR472DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR472DP-T1-GE3?

SIR472DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR472DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR472DP-T1-GE3?

For technical support, including SIR472DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR472DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR472DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR472DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR472DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR472DP-T1-GE3?

All SIR472DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR472DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR472DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR472DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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