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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR474DP-T1-GE3

Name: SIR474DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR474DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR474DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR474DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK SO-8

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Product details

Overview

SIR474DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectification in notebook CPU core power stages. It delivers R_DS(on) = 9.5 mΩ at V_GS = 10 V, 12.0 mΩ at V_GS = 4.5 V, 20 A continuous drain current (T_C = 25 °C), and 8 nC total gate charge - enabling high-efficiency, space-constrained DC-DC conversion.

For engineers reviewing the SIR474DP-T1-GE3 datasheet, SIR474DP-T1-GE3 pinout, SIR474DP-T1-GE3 application, or SIR474DP-T1-GE3 equivalent, this page provides verified thermal resistance (R_thJC = 3.5 °C/W), body diode recovery (t_rr = 14–28 ns), avalanche rating (E_AS = 20 mJ), and PowerPAK SO-8 footprint compatibility with standard SO-8 land patterns - critical for notebook VRM layout validation and thermal derating analysis.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1.0–2.2 V) supports 4.5 V logic-level drive, while its low Q_g (8 nC typ. at 4.5 V) minimizes turn-on losses in high-frequency synchronous buck converters.

The PowerPAK SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to the PCB, delivering R_thJC = 3.5 °C/W (typ.) and R_thJA = 27 °C/W (typ., t ≤ 10 s), matching DPAK thermal performance within an SO-8 footprint - essential for thermally constrained notebook CPU core rail designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input VRMs with margin against transients.
R_DS(on) @ 10 V	9.5 mΩ max - Enables <1.5 W conduction loss at 20 A in high-side switch position.
R_DS(on) @ 4.5 V	12.0 mΩ max - Ensures stable operation with 5 V or 4.5 V gate drive from integrated controllers.
Q_g	8 nC typ. @ 4.5 V - Reduces gate drive power and enables >1 MHz switching without excessive driver heating.
I_D (cont.)	20 A @ T_C = 25 °C - Supports high-current CPU core phases when mounted on thermally enhanced PCBs.
E_AS	20 mJ - Withstands single-pulse inductive energy during load dump or transient events in VRM output stage.
R_thJC	3.5 °C/W typical - Allows direct thermal path from die to PCB copper, enabling junction temperature control below 125 °C under 2.5 W dissipation.

Pinout & Package

PowerPAK® SO-8 is a leadless, surface-mount package with 1.07 mm profile, identical footprint and pinout to standard SO-8 but with enlarged exposed-drain thermal pad on bottom side. Dimensions: 6.15 mm × 5.15 mm × 1.07 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier operation.
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection integrates into large bottom-side copper pour for minimal R_thJC and robust thermal dissipation.
G (pin 1 top view)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation during hard switching.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 30% lower R_DS(on) vs. planar MOSFETs of same die size, improving efficiency in 1–2 MHz VRMs.
PowerPAK SO-8 thermal design	Exposes drain metal on bottom side for direct PCB thermal coupling - achieves R_thJC = 3.5 °C/W, equivalent to DPAK.
Optimized for high-side synchronous rectification	Low V_GS(th) (1.0–2.2 V) and fast body diode recovery (t_rr = 14–28 ns) minimize shoot-through risk and reverse recovery loss.
100% R_g and UIS tested	Guarantees gate resistance consistency (0.3–2.6 Ω) and ruggedness against unclamped inductive switching stress in real-world VRM faults.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, suitable for consumer notebook manufacturing.

Applications

Notebook CPU Core VRM	High-Density Server Point-of-Load
Use Scenario: High-efficiency 1–2 phase buck converter supplying 0.8–1.5 V at up to 40 A to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1.5 MHz with gate driven by integrated controller. Use Value: 9.5 mΩ R_DS(on) at 10 V reduces conduction loss by ~35% vs. legacy SO-8 MOSFETs, enabling >95% peak efficiency at 20 A load.	Use Scenario: Compact 3.3 V or 5 V point-of-load regulator on server motherboard near FPGA or ASIC. IC Role / Device Role / Timing Role: Low-profile, high-current power switch in space-constrained board area with limited heatsinking. Use Value: PowerPAK SO-8's 1.07 mm height and 3.5 °C/W R_thJC allow full 20 A current handling without external heatsink - saving board volume vs. DPAK alternatives.
USB-C PD Fast Charging Adapter	Industrial PLC I/O Module Power Stage
Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter using active clamp flyback topology. IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode to improve efficiency and reduce thermal stress at 20 V output. Use Value: Body diode V_SD = 0.76–1.1 V and t_rr = 14–28 ns enable clean commutation with minimal reverse recovery loss, increasing adapter efficiency by 1.2–1.8%.	Use Scenario: 24 V DC input power switch controlling isolated 5 V/3.3 V rails for digital I/O protection circuits. IC Role / Device Role / Timing Role: Robust, low-R_DS(on) switch handling repetitive inrush and short-circuit events in industrial environment. Use Value: 20 mJ E_AS rating and 50 A pulsed drain current (I_DM) ensure reliable operation during 24 V bus fault transients without failure.

Notebook CPU Core VRM

High-Density Server Point-of-Load

Use Scenario: High-efficiency 1–2 phase buck converter supplying 0.8–1.5 V at up to 40 A to Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1.5 MHz with gate driven by integrated controller.

Use Value: 9.5 mΩ R_DS(on) at 10 V reduces conduction loss by ~35% vs. legacy SO-8 MOSFETs, enabling >95% peak efficiency at 20 A load.

Use Scenario: Compact 3.3 V or 5 V point-of-load regulator on server motherboard near FPGA or ASIC.

IC Role / Device Role / Timing Role: Low-profile, high-current power switch in space-constrained board area with limited heatsinking.

Use Value: PowerPAK SO-8's 1.07 mm height and 3.5 °C/W R_thJC allow full 20 A current handling without external heatsink - saving board volume vs. DPAK alternatives.

USB-C PD Fast Charging Adapter

Industrial PLC I/O Module Power Stage

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter using active clamp flyback topology.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode to improve efficiency and reduce thermal stress at 20 V output.

Use Value: Body diode V_SD = 0.76–1.1 V and t_rr = 14–28 ns enable clean commutation with minimal reverse recovery loss, increasing adapter efficiency by 1.2–1.8%.

Use Scenario: 24 V DC input power switch controlling isolated 5 V/3.3 V rails for digital I/O protection circuits.

IC Role / Device Role / Timing Role: Robust, low-R_DS(on) switch handling repetitive inrush and short-circuit events in industrial environment.

Use Value: 20 mJ E_AS rating and 50 A pulsed drain current (I_DM) ensure reliable operation during 24 V bus fault transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR472DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 10 V (vs. 9.5 mΩ); Q_g = 7.5 nC @ 4.5 V (vs. 8 nC); same PowerPAK SO-8 package.	Slightly higher conduction loss but marginally faster switching; suitable where gate drive strength is limited.	Select SiR472DP-T1-GE3 only if system-level testing confirms acceptable thermal rise at 18 A continuous load.
IRF7470PBF	SO-8 package (not PowerPAK); R_DS(on) = 12.5 mΩ @ 10 V; R_thJC = 16 °C/W (vs. 3.5 °C/W); no exposed drain pad.	Higher thermal resistance limits usable current to ~12 A on standard FR4; requires larger PCB copper area for equivalent cooling.	IRF7470PBF is viable only in non-thermally constrained designs where board space allows extended copper pours or forced air cooling.

Compared with SiR472DP-T1-GE3, SIR474DP-T1-GE3 offers lower R_DS(on) for reduced conduction loss in high-current CPU core rails; versus IRF7470PBF, it delivers 4.6× lower R_thJC, enabling 67% higher current density without thermal derating - critical for ultra-thin notebook platforms.

Availability

SIR474DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-density server point-of-load regulators, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for SIR474DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR474DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-frequency, high-current synchronous rectification in space- and thermally constrained computing and portable power applications.

FAQ

What is the maximum continuous drain current for SIR474DP-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SIR474DP-T1-GE3 is 20 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area on the drain pad to maintain junction temperature ≤ 150 °C. The SIR474DP-T1-GE3 achieves this via its PowerPAK SO-8 package's low R_thJC of 3.5 °C/W, enabling sustained 20 A operation without external heatsinking in well-designed layouts.

Does SIR474DP-T1-GE3 support 4.5 V gate drive in synchronous buck applications?

Yes, SIR474DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 12.0 mΩ max at V_GS = 4.5 V and I_D = 7 A. Its V_GS(th) range of 1.0–2.2 V ensures reliable turn-on with standard 4.5 V logic-level controllers used in notebook VRMs. The SIR474DP-T1-GE3 also exhibits low Q_g (8 nC typ. at 4.5 V), minimizing gate drive losses and enabling stable operation at switching frequencies up to 1.5 MHz.

How does the PowerPAK SO-8 package of SIR474DP-T1-GE3 compare thermally to standard SO-8 MOSFETs?

The PowerPAK SO-8 package of SIR474DP-T1-GE3 delivers R_thJC = 3.5 °C/W (typ.), which is 4.6× lower than the ~16 °C/W of standard SO-8 packages. This is achieved via an exposed copper drain pad on the bottom side that directly couples heat to the PCB. As a result, the SIR474DP-T1-GE3 maintains junction temperatures up to 43 °C cooler than a standard SO-8 MOSFET under identical 2.7 W dissipation - directly improving R_DS(on) stability and system efficiency.

Is SIR474DP-T1-GE3 suitable for use as a synchronous rectifier in USB-C PD adapters?

Yes, SIR474DP-T1-GE3 is validated for secondary-side synchronous rectification in USB-C PD adapters, particularly in active clamp flyback and LLC topologies. Its low V_SD (0.76–1.1 V), fast t_rr (14–28 ns), and 20 mJ E_AS rating enable efficient replacement of Schottky diodes at 20 V output. The SIR474DP-T1-GE3's 30 V V_DS rating provides sufficient margin for 20 V PD applications with transient overshoot, and its PowerPAK SO-8 footprint simplifies layout migration from legacy solutions.

What is the gate resistance (R_g) specification for SIR474DP-T1-GE3, and why is it important?

The gate resistance R_g for SIR474DP-T1-GE3 is specified as 0.3–2.6 Ω (typ. 1.3 Ω) at 1 MHz, measured between gate and source terminals. This parameter directly impacts switching speed and gate driver power requirements: lower R_g enables faster turn-on/turn-off transitions, reducing switching losses, while higher R_g damps ringing and improves EMI behavior. Because R_g is 100% production-tested, the SIR474DP-T1-GE3 guarantees consistent gate drive timing across all units - critical for multi-phase VRM synchronization and reliability.

SIR474DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 985 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR474DP-T1-GE3 FAQ

1.How can I place an order for SIR474DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR474DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR474DP-T1-GE3 reliable?

The price and inventory of SIR474DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR474DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR474DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR474DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR474DP-T1-GE3?

SIR474DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR474DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR474DP-T1-GE3?

For technical support, including SIR474DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR474DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR474DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR474DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR474DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR474DP-T1-GE3?

All SIR474DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR474DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR474DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR474DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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