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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR474DP-T1-RE3

Name: SIR474DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR474DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR474DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR474DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK SO-8

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Product details

Overview

SIR474DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers R_DS(on) = 9.5 mΩ at V_GS = 10 V, 12.0 mΩ at V_GS = 4.5 V, 20 A continuous drain current (T_J = 150 °C), and 8 nC total gate charge - enabling high-efficiency, space-constrained DC/DC conversion.

For engineers reviewing the SIR474DP-T1-RE3 datasheet, SIR474DP-T1-RE3 pinout, SIR474DP-T1-RE3 application, or SIR474DP-T1-RE3 equivalent, key selection criteria include its low-profile (1.07 mm) leadless PowerPAK SO-8 thermal performance, 100% R_g and UIS testing, and validated suitability for high-side switching in mobile computing VRMs where junction-to-case thermal resistance (R_thJC = 3.5 °C/W typ.) and body diode recovery (t_rr = 14 ns typ.) directly impact efficiency and thermal margin.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate charge profile (Q_g = 8 nC typ. at V_GS = 4.5 V) and low gate resistance (R_g = 0.3–2.6 Ω) support efficient gate drive in high-frequency synchronous buck converters. The device is characterized for stable operation across -55 °C to +150 °C junction temperature range.

Designed specifically for high-side configuration, it features a robust body diode (V_SD = 0.76 V typ. at I_S = 3 A, Q_rr = 5 nC typ.) and avalanche-rated construction (E_AS = 20 mJ). Thermal design leverages the exposed copper drain pad of the PowerPAK SO-8 for direct board heat sinking, achieving R_thJC = 3.5 °C/W steady-state - comparable to DPAK performance in SO-8 footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input VRM stages with margin against transients.
R_DS(on) @ V_GS = 10 V	9.5 mΩ max - Enables <2 W conduction loss at 15 A in high-side switch position.
R_DS(on) @ V_GS = 4.5 V	12.0 mΩ max - Ensures low on-resistance under typical 5 V gate drive from controller ICs.
Q_g	8 nC typ. - Reduces gate drive power and enables >1 MHz switching without excessive driver losses.
I_D (continuous)	20 A at T_C = 25 °C - Supports high-current CPU core rails when mounted on thermally enhanced PCBs.
R_thJC	3.5 °C/W typ. - Allows direct thermal coupling to inner-layer copper planes, critical for notebook thermal envelope.
t_rr	14 ns typ. - Minimizes reverse recovery loss during dead-time in synchronous rectification.

Pinout & Package

Package: PowerPAK® SO-8 - leadless, 6.15 mm × 5.15 mm × 1.07 mm, with exposed copper drain pad on bottom surface for thermal and electrical connection. Compatible with standard SO-8 land patterns but requires extended drain copper area for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Single gate input with low R_g (0.3–2.6 Ω) for stable, low-noise turn-on/turn-off control.
6, 7, 8	Drain (D)	Three parallel drain terminals connected to large exposed copper pad - primary thermal path to PCB.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency efficiency in VRMs.
PowerPAK® SO-8 package	1.07 mm height enables ultra-thin notebook designs while providing DPAK-level thermal resistance (3.5 °C/W).
High-side synchronous rectifier optimization	Body diode t_rr = 14 ns and Q_rr = 5 nC minimize shoot-through risk and recovery loss in buck topologies.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C material definitions.

Applications

Notebook CPU Core VRM	Mobile GPU Power Stage
Use Scenario: High-current, high-efficiency point-of-load regulation for Intel/AMD mobile processors with dynamic load steps up to 100 A/μs. IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck converter delivering 0.8–1.5 V at up to 40 A per phase. Use Value: Low R_DS(on) and fast t_rr reduce conduction and recovery losses, directly improving battery runtime by >2% at full load.	Use Scenario: Compact, thermally constrained power delivery for discrete graphics processing units in ultrabooks and 2-in-1 devices. IC Role / Device Role: High-side FET in single-phase or dual-phase VRM supplying GPU core voltage with tight thermal budget (<65 °C board temp). Use Value: PowerPAK SO-8's 3.5 °C/W R_thJC enables stable operation at 20 A without external heatsink, saving board area and BOM cost.
SSD Controller Power Rail	USB-C PD Sink Converter
Use Scenario: Low-voltage, high-transient current supply for NVMe SSD controllers requiring fast load-step response and minimal voltage droop. IC Role / Device Role: High-side switch in 3.3 V or 1.8 V buck regulator with >500 kHz switching frequency. Use Value: 8 nC Q_g and low C_iss (985 pF) allow clean, low-loss switching at high frequencies, preserving transient response and reducing output capacitance needs.	Use Scenario: Secondary-side synchronous rectification in USB-C Power Delivery adapters delivering 5–20 V at up to 5 A. IC Role / Device Role: High-side FET in isolated flyback or active clamp forward topology operating at 100–300 kHz. Use Value: Optimized body diode characteristics (V_SD = 0.76 V, t_rr = 14 ns) reduce reverse recovery loss and EMI, improving adapter efficiency and thermal compliance.

Notebook CPU Core VRM

Mobile GPU Power Stage

Use Scenario: High-current, high-efficiency point-of-load regulation for Intel/AMD mobile processors with dynamic load steps up to 100 A/μs.

IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck converter delivering 0.8–1.5 V at up to 40 A per phase.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and recovery losses, directly improving battery runtime by >2% at full load.

Use Scenario: Compact, thermally constrained power delivery for discrete graphics processing units in ultrabooks and 2-in-1 devices.

IC Role / Device Role: High-side FET in single-phase or dual-phase VRM supplying GPU core voltage with tight thermal budget (<65 °C board temp).

Use Value: PowerPAK SO-8's 3.5 °C/W R_thJC enables stable operation at 20 A without external heatsink, saving board area and BOM cost.

SSD Controller Power Rail

USB-C PD Sink Converter

Use Scenario: Low-voltage, high-transient current supply for NVMe SSD controllers requiring fast load-step response and minimal voltage droop.

IC Role / Device Role: High-side switch in 3.3 V or 1.8 V buck regulator with >500 kHz switching frequency.

Use Value: 8 nC Q_g and low C_iss (985 pF) allow clean, low-loss switching at high frequencies, preserving transient response and reducing output capacitance needs.

Use Scenario: Secondary-side synchronous rectification in USB-C Power Delivery adapters delivering 5–20 V at up to 5 A.

IC Role / Device Role: High-side FET in isolated flyback or active clamp forward topology operating at 100–300 kHz.

Use Value: Optimized body diode characteristics (V_SD = 0.76 V, t_rr = 14 ns) reduce reverse recovery loss and EMI, improving adapter efficiency and thermal compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-side MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR476DP-T1-RE3	Same PowerPAK SO-8 package; higher V_DS = 40 V, R_DS(on) = 11.5 mΩ @ 10 V (vs. 9.5 mΩ), Q_g = 9.5 nC.	Better suited for 19 V input adapters or industrial 24 V systems where 30 V margin is insufficient.	Select SiR476DP-T1-RE3 only if system input voltage exceeds 15 V or transient protection headroom is critical.
IRF7478PBF	Standard SO-8 package; R_DS(on) = 11.5 mΩ @ 10 V, R_thJC = 16 °C/W (vs. 3.5 °C/W), no 100% UIS test.	Limited to lower-current, lower-frequency applications due to poor thermal performance and unverified avalanche ruggedness.	Use IRF7478PBF only in cost-sensitive, non-thermal-critical designs where PCB space allows larger thermal pads or forced air cooling.

Compared with SiR474DP-T1-RE3, SiR476DP-T1-RE3 trades marginal on-resistance increase for wider input voltage capability, while IRF7478PBF sacrifices thermal performance and reliability validation for legacy SO-8 compatibility - making SIR474DP-T1-RE3 the optimal choice for thermally constrained, high-efficiency notebook CPU core VRMs.

Availability

SIR474DP-T1-RE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, mobile GPU power stages, SSD controller rails, and USB-C PD sink converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIR474DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing, automotive, and industrial markets.

The SIR474DP-T1-RE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency DC/DC conversion in portable computing - prioritizing low R_DS(on), fast switching, and superior thermal performance in minimal footprint.

FAQ

What is the maximum continuous drain current rating for SIR474DP-T1-RE3 at 70 °C case temperature?

The SIR474DP-T1-RE3 supports 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area on the drain pad to maintain case temperature at or below 70 °C under full load conditions. Derating applies above this temperature per the current derating curve in the datasheet.

Is SIR474DP-T1-RE3 suitable for high-side synchronous rectification in a 500 kHz buck converter?

Yes, SIR474DP-T1-RE3 is explicitly optimized for high-side synchronous rectifier operation and supports 500 kHz switching with its 8 nC total gate charge (Q_g) and low gate resistance (0.3–2.6 Ω). Measured turn-off delay (t_d(off) = 16–30 ns) and fall time (t_f = 9–18 ns) at V_GEN = 10 V confirm fast, controllable transitions essential for minimizing dead-time losses at this frequency.

Does SIR474DP-T1-RE3 have a qualified avalanche rating, and what is its EAS value?

Yes, SIR474DP-T1-RE3 is 100% UIS (unclamped inductive switching) tested per JEDEC JESD22-A115, with a rated single-pulse avalanche energy (E_AS) of 20 mJ at T_J = 25 °C. This qualification ensures ruggedness against inductive energy spikes during hard-switching events in VRM applications, supporting reliable operation without external snubbers.

What is the recommended solder reflow profile for SIR474DP-T1-RE3?

The SIR474DP-T1-RE3 follows the Pb-free reflow profile defined in Vishay document 73257: peak temperature of 255 °C (+5/−0 °C) for 30 s, time above 217 °C between 60–150 s, ramp-up rate ≤3 °C/s, and ramp-down rate ≤6 °C/s. Manual soldering with an iron is not recommended due to its leadless PowerPAK® SO-8 construction and exposed copper drain pad.

How does the PowerPAK® SO-8 package of SIR474DP-T1-RE3 improve thermal performance versus standard SO-8?

The SIR474DP-T1-RE3's PowerPAK® SO-8 achieves R_thJC = 3.5 °C/W (typ.), matching DPAK performance - a 4.6× improvement over standard SO-8's 16 °C/W. This is enabled by the exposed copper drain pad directly bonded to PCB copper, eliminating leadframe thermal bottlenecks. In practice, this reduces junction temperature rise by ~40 °C at 2.7 W dissipation compared to standard SO-8 equivalents.

SIR474DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 985 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR474DP-T1-RE3 FAQ

1.How can I place an order for SIR474DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR474DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR474DP-T1-RE3 reliable?

The price and inventory of SIR474DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR474DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR474DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR474DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR474DP-T1-RE3?

SIR474DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR474DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR474DP-T1-RE3?

For technical support, including SIR474DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR474DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR474DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR474DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR474DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR474DP-T1-RE3?

All SIR474DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR474DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR474DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR474DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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