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Vishay Siliconix SIR492DP-T1-GE3
- Part No.:
- SIR492DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR492DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,805
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Product details
Overview
SIR492DP-T1-GE3 from Vishay Siliconix is an N-channel 12-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 40 A continuous drain current at TC = 25 °C, RDS(on) of 3.8 mΩ at VGS = 4.5 V, and 41 nC total gate charge - optimized for secondary synchronous rectification in high-efficiency DC/DC converters.
For engineers reviewing the SIR492DP-T1-GE3 datasheet, SIR492DP-T1-GE3 pinout, SIR492DP-T1-GE3 application, or SIR492DP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 2.5 V gate drive, thermal resistance RthJC of 2.9 °C/W, lead-free/halogen-free compliance, and compatibility with standard SO-8 PCB footprints despite its enhanced thermal performance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics. Its PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 2.9 °C/W.
The device supports gate drive down to 2.5 V (RDS(on) = 4.7 mΩ), exhibits 0.4–1.0 V gate threshold voltage, and integrates 100% Rg-tested gate structures for consistent turn-on behavior across production lots - critical for point-of-load regulation and load switch reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - maximum blocking voltage suitable for 12-V input rails and synchronous rectification in buck converters. |
| RDS(on) | 3.8 mΩ at VGS = 4.5 V - enables <1 W conduction loss at 20 A, reducing heat generation in compact power stages. |
| ID (continuous) | 40 A at TC = 25 °C - package-limited current rating supporting high-density POL converters without external heatsinking. |
| Qg | 41 nC at VGS = 4.5 V - determines gate driver sizing and switching loss; low value supports efficient operation at >500 kHz. |
| RthJC | 2.9 °C/W - enables direct thermal path from die to PCB, allowing junction temperature control comparable to DPAK packages. |
| VGS(th) | 0.4–1.0 V - ensures reliable enhancement-mode turn-on with logic-level gate drivers and low-voltage controllers. |
| Body diode VSD | 0.61–1.2 V at IS = 3.2 A - low forward drop improves reverse recovery efficiency during dead-time conduction. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, but with exposed drain pads on the bottom for superior thermal performance. Height is only 1.07 mm, enabling space-constrained designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–8 V gate-source voltage; low input capacitance (Ciss = 3720 pF) reduces driver loading. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in most synchronous rectifier layouts. |
| 3 (S) | Source | Second source connection - paralleled internally with Pin 2 to reduce source inductance and improve current sharing. |
| 4 (S) | Source | Third source connection - further lowers source loop inductance for high di/dt applications like POL switching. |
| 5 (D) | Drain | Main power output node; connected to large copper area on PCB bottom layer via exposed pad for thermal and current conduction. |
| 6 (D) | Drain | Second drain connection - electrically tied to Pin 5 and bottom-side thermal pad to maximize current capacity and thermal dissipation. |
| 7 (D) | Drain | Third drain connection - enhances current handling and reduces resistance between die and PCB copper. |
| 8 (D) | Drain | Fourth drain connection - completes low-inductance, high-current path from die to board, critical for minimizing switching losses. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 3.8 mΩ RDS(on) at 4.5 V gate drive - delivers higher efficiency than planar MOSFETs in 12-V input systems. |
| PowerPAK® SO-8 package | Same footprint as SO-8 but with 2.9 °C/W RthJC - eliminates need for layout changes when upgrading from legacy SO-8 devices. |
| 100% Rg tested | Guarantees gate resistance within 1.4–2.1 Ω - ensures consistent switching timing and minimizes risk of shoot-through in half-bridge configurations. |
| Halogen-free & RoHS compliant | Meets IPC-1752A material declaration requirements - supports environmental compliance for industrial and telecom end equipment. |
| Low-profile 1.07 mm height | Enables use in ultra-thin power modules and stacked PCB assemblies where Z-height is constrained. |
Applications
| Secondary Synchronous Rectification | Point-of-Load Regulation |
|---|---|
Use Scenario: Used as the low-side switch in isolated DC/DC converters (e.g., forward or LLC topologies) to replace Schottky diodes and reduce conduction losses. IC Role / Device Role: Synchronous rectifier MOSFET controlled by a dedicated gate driver or controller IC with adaptive dead-time management. Use Value: Achieves >95% efficiency at 20–40 A loads due to 3.8 mΩ RDS(on) and low Qg, directly lowering system thermal load and improving power density. | Use Scenario: Integrated into multiphase buck regulators supplying CPUs, FPGAs, or ASICs with dynamic current demands up to 40 A per phase. IC Role / Device Role: High-current, low-RDS(on) power stage switch operating at 300–1000 kHz with tight thermal constraints. Use Value: Enables stable 0.8–1.2 V output with <20 mV ripple using minimal output capacitance, thanks to low Coss (1290 pF) and fast switching (tr = 125 ns @ 4.5 V). |
| Load Switch | Hot-Swap Circuit Protection |
Use Scenario: Placed between intermediate bus (e.g., 12 V) and downstream subsystems (e.g., memory modules, I/O banks) to enable controlled power-up/down sequencing. IC Role / Device Role: Single-N-channel load switch with integrated gate driver support and overcurrent limiting via external sense resistor. Use Value: Supports soft-start ramp rates down to 10 ms with 40 A capability, preventing inrush current damage while maintaining low steady-state loss (<0.5 W at 25 A). | Use Scenario: Deployed in backplane or server midplane slots to isolate faulty boards during live insertion/removal without disrupting upstream power. IC Role / Device Role: Primary current-handling element in hot-swap controller reference design, working with TI TPS2375x or ON Semi NCP4552x controllers. Use Value: Withstands 60 A pulsed drain current and 12 V VDS rating, enabling robust fault clearing under short-circuit conditions without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR492DP-T1-RE3 | Same die and package, but tape-and-reel packaging variant with different reel size and moisture sensitivity level (MSL 1 vs MSL 3 for GE3). | No functional difference; RE3 is intended for high-volume automated assembly with larger reels (2500 pcs vs 3000 pcs). | Select RE3 only if matching existing SMT line reel logistics; GE3 is preferred for prototyping and low-volume builds due to smaller reel size. |
| SiR492ADP-T1-GE3 | Enhanced version with lower RDS(on) (3.1 mΩ typ. at 4.5 V) and improved body diode recovery (trr = 46 ns min.), same PowerPAK SO-8 footprint. | Better suited for high-frequency (>1 MHz) POL and resonant converters where switching loss dominates. | Choose SiR492ADP-T1-GE3 when efficiency above 96% is required at >500 kHz; SIR492DP-T1-GE3 remains optimal for cost-sensitive 300–500 kHz designs. |
Compared with SiR492DP-T1-RE3, SIR492DP-T1-GE3 offers identical electrical performance but better suitability for flexible manufacturing environments; versus SiR492ADP-T1-GE3, it trades minor RDS(on) and trr improvements for lower unit cost and broader qualification history in telecom infrastructure.
Availability
SIR492DP-T1-GE3 is available at Aetrix Electronics and suitable for secondary synchronous rectification, point-of-load regulation, and load switch applications requiring stable component supply, long-term lifecycle assurance, and full traceability for industrial and communications equipment.
Supply support for SIR492DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SiR492DP product line targets high-current, low-voltage power conversion in data centers, telecom infrastructure, and computing systems - designed to replace legacy SO-8 MOSFETs with superior thermal and electrical performance without PCB redesign.
FAQ
What is the maximum continuous drain current rating for SIR492DP-T1-GE3 at 70 °C case temperature?
The SIR492DP-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK® SO-8 package's ability to dissipate heat at elevated ambient or board temperatures, and must be validated against actual PCB copper area and airflow conditions in the final design.
Does SIR492DP-T1-GE3 support gate drive voltages below 3 V, and what is its RDS(on) at 2.5 V VGS?
Yes, SIR492DP-T1-GE3 is characterized down to 2.5 V gate drive, with RDS(on) = 4.7 mΩ (typ.) at ID = 10 A and VGS = 2.5 V. This makes it compatible with low-voltage controllers and battery-powered systems where gate drive headroom is limited, though designers should verify stability margins given its 0.4–1.0 V VGS(th) range.
Is SIR492DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs, and can it be used on existing SO-8 land patterns?
Yes, SIR492DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, enabling drop-in replacement on existing land patterns. However, optimal thermal performance requires extending the drain pad copper area beyond the minimum SO-8 outline to leverage the exposed bottom-side drain terminals.
What is the body diode reverse recovery time (trr) specification for SIR492DP-T1-GE3, and how does it impact synchronous rectifier performance?
The SIR492DP-T1-GE3 has a body diode reverse recovery time of 46–70 ns (typ./max) at IF = 2 A, dI/dt = 100 A/µs, and TJ = 25 °C. This fast recovery minimizes voltage spikes and cross-conduction losses during dead-time transitions in synchronous rectifiers, directly contributing to reduced EMI and improved efficiency in high-frequency DC/DC converters.
How does the thermal resistance RthJC of 2.9 °C/W for SIR492DP-T1-GE3 compare to traditional SO-8 packages, and what design benefit does it provide?
The SIR492DP-T1-GE3 achieves RthJC = 2.9 °C/W - comparable to DPAK packages and ~5× better than standard SO-8 (typically ~16 °C/W). This allows the MOSFET die temperature to stay within ~2 °C of the PCB temperature under 2.7 W dissipation, maintaining stable RDS(on) and enabling higher current density without thermal runaway in compact power stages.
SIR492DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3720 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.2W (Ta), 36W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR492DP-T1-GE3 FAQ
1.How can I place an order for SIR492DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR492DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR492DP-T1-GE3 reliable?
The price and inventory of SIR492DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR492DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR492DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR492DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR492DP-T1-GE3?
SIR492DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR492DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR492DP-T1-GE3?
For technical support, including SIR492DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR492DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR492DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR492DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR492DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR492DP-T1-GE3?
All SIR492DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR492DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR492DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR492DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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