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Vishay Siliconix SIR494DP-T1-GE3
- Part No.:
- SIR494DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR494DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,054
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Product details
Overview
SIR494DP-T1-GE3 from Vishay Siliconix is an N-channel 12-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering 60 A continuous drain current at TC = 25 °C, RDS(on) of 1.2 mΩ at VGS = 10 V, and 1.7 mΩ at VGS = 4.5 V, optimized for high-efficiency DC/DC converters and OR-ing circuits.
For engineers reviewing the SIR494DP-T1-GE3 datasheet, SIR494DP-T1-GE3 pinout, SIR494DP-T1-GE3 application, or SIR494DP-T1-GE3 equivalent, key selection considerations include its 12-V VDS rating, ultra-low on-resistance with 4.5-V logic-level gate drive, 50-nC total gate charge, thermal performance matching DPAK (RthJC = 0.9 °C/W), and lead-free/halogen-free PowerPAK SO-8 packaging compatible with standard SO-8 footprints.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve low RDS(on) while maintaining robust UIS and avalanche capability (EAS = 11 mJ, IAS = 15 A). Its gate threshold voltage (VGS(th) = 1.0–2.5 V) enables reliable turn-on with 4.5-V microcontroller outputs, and its dynamic parameters-including Ciss = 6900 pF, Crss = 1785 pF, and Qgd = 15 nC-support fast switching in synchronous buck stages.
The device integrates 100 % Rg and 100 % UIS testing per unit, complies with RoHS and IEC 61249-2-21 halogen-free standards, and features a thermally enhanced PowerPAK SO-8 package with exposed drain pad for low-junction-to-case resistance (RthJC max = 1.2 °C/W) and compatibility with existing SO-8 PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum drain-source blocking voltage; suitable for 12-V input rails and point-of-load regulation. |
| RDS(on) | 1.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 60 A; critical for high-current power stages. |
| ID (continuous) | 60 A @ TC = 25 °C - Package-limited current handling; supports high-density DC/DC designs without external heatsinking. |
| Qg | 50–75 nC @ VGS = 4.5 V - Determines gate driver sizing and switching loss in 4.5-V logic-driven applications. |
| RthJC | 0.9 °C/W (typ.) - Thermal path from junction to case enables efficient heat transfer to PCB copper or heatsink. |
| VGS(th) | 1.0–2.5 V - Ensures full enhancement with standard 3.3-V or 5-V logic; avoids partial turn-on in low-voltage control systems. |
| EAS | 11 mJ - Confirmed single-pulse avalanche energy rating; supports robust operation during inductive load transients. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but featuring an exposed copper drain pad on the bottom for superior thermal performance. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die and exposed bottom pad; primary current path and thermal conduction path to PCB. |
| 5 | Gate (G) | Control terminal for MOSFET turn-on/off; requires low-impedance gate driver due to Qg = 50–75 nC at 4.5 V. |
| 6, 7, 8 | Source (S) | Three parallel source terminals forming low-inductance return path; connects to power ground plane for minimal switching loop area. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Delivers 1.2 mΩ RDS(on) at 10 V and 1.7 mΩ at 4.5 V-enabling high-efficiency operation in compact 12-V systems. |
| 100 % Rg tested | Ensures consistent gate resistance (0.2–1.05 Ω) across units, improving predictability of switching timing and EMI behavior. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events common in DC/DC converter freewheeling paths. |
| PowerPAK SO-8 package | Provides DPAK-equivalent thermal performance (RthJC = 0.9 °C/W) in SO-8 footprint-no PCB redesign needed for upgrade. |
| Lead (Pb)-free & halogen-free | Meets IEC 61249-2-21 and RoHS 2002/95/EC requirements for environmentally compliant industrial and computing applications. |
Applications
| DC/DC Converters | OR-ing Circuits |
|---|---|
Use Scenario: High-current synchronous buck converter in server VRMs or telecom power supplies operating from 12-V input. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling energy transfer between input rail and output inductor-capacitor network. Use Value: Ultra-low RDS(on) minimizes conduction loss at 60 A, while low Qg and Crss reduce switching loss and improve efficiency above 95 % at 500 kHz. | Use Scenario: Redundant 12-V power supply backplane where multiple sources feed a common bus with fault isolation. IC Role / Device Role / Timing Role: Active diode replacement performing forward conduction and reverse blocking under digital control. Use Value: Near-zero forward voltage drop (VSD = 0.73–1.1 V) vs. Schottky diodes reduces power loss by >50 %; fast trr = 46–80 ns enables rapid reverse recovery during source switchover. |
| Hot-Swap Controllers | Load Switches |
Use Scenario: Inrush current limiting and fault protection for hot-pluggable modules in enterprise storage enclosures. IC Role / Device Role / Timing Role: Main pass element controlled by external hot-swap IC to ramp voltage and limit surge current during insertion. Use Value: Low RDS(on) ensures minimal voltage drop during steady-state operation; robust UIS rating withstands capacitive load turn-on stress. | Use Scenario: High-current system power rail enable/disable in industrial PLC I/O modules or FPGA carrier boards. IC Role / Device Role / Timing Role: Single-stage load switch managing 12-V distribution to downstream subsystems with controlled slew rate. Use Value: Logic-level gate drive (VGS(th) ≤ 2.5 V) allows direct interface with 3.3-V GPIO; low Qgd improves controllability during transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR492DP-T1-GE3 | RDS(on) = 1.4 mΩ @ 4.5 V (vs. 1.7 mΩ); lower Qg (42 nC @ 4.5 V) but same VDS and package. | Better suited for higher-frequency (>1 MHz) DC/DC where gate charge dominates losses. | Select SiR492DP-T1-GE3 when prioritizing switching loss reduction over absolute lowest conduction loss. |
| IRF7478PBF | SO-8 package, VDS = 20 V, RDS(on) = 2.2 mΩ @ 4.5 V, Qg = 44 nC; not halogen-free. | Higher voltage margin but higher on-resistance; lacks 100 % UIS test and halogen-free certification. | Choose IRF7478PBF only if 20-V rating is required and environmental compliance is secondary. |
Compared with SiR492DP-T1-GE3 and IRF7478PBF, the SIR494DP-T1-GE3 offers the lowest RDS(on) at 4.5 V among SO-8 12-V MOSFETs with full UIS qualification and halogen-free construction-making it optimal for space-constrained, high-current 12-V OR-ing and VRM applications demanding both efficiency and reliability.
Availability
SIR494DP-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, OR-ing circuits, and hot-swap controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIR494DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR494DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III Power MOSFET product line, engineered specifically for high-current, low-voltage power conversion in computing, telecom, and industrial systems where thermal performance and logic-level drive are critical.
FAQ
What is the maximum continuous drain current rating for SIR494DP-T1-GE3 at 70 °C case temperature?
The SIR494DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value, reflecting the robust thermal design of the PowerPAK SO-8 package that maintains current capacity across elevated temperatures.
Does SIR494DP-T1-GE3 require a heatsink in typical 60-A DC/DC applications?
SIR494DP-T1-GE3 does not require an external heatsink in typical 60-A DC/DC applications when mounted on a 1" × 1" FR4 board with adequate copper pour on the drain pad. Its RthJC of 0.9 °C/W and RthJA of 15–20 °C/W (t ≤ 10 s) allow junction temperatures to remain within 150 °C limits under proper PCB thermal design, as validated in Vishay's thermal characterization data.
Is SIR494DP-T1-GE3 compatible with standard SO-8 PCB footprints?
Yes, SIR494DP-T1-GE3 in PowerPAK SO-8 package uses the identical footprint and pinout as standard SO-8 devices, enabling drop-in replacement without layout changes. The only physical difference is the extended drain pad area on the bottom, which interfaces directly with PCB copper for improved thermal conduction-no modifications to land patterns are required for basic functionality.
What is the body diode forward voltage of SIR494DP-T1-GE3 at 5 A source current?
The body diode forward voltage (VSD) of SIR494DP-T1-GE3 is specified as 0.73–1.1 V at IS = 5 A and TJ = 25 °C. This low VSD enables efficient reverse conduction in OR-ing and synchronous rectification applications, reducing power loss compared to discrete Schottky diodes with typical VF ≥ 0.45 V at same current.
How is the gate charge of SIR494DP-T1-GE3 distributed between Qgs and Qgd?
For SIR494DP-T1-GE3, the gate charge is distributed as Qgs = 16.5 nC and Qgd = 15 nC under VDS = 6 V, VGS = 10 V, ID = 20 A conditions. This near-equal split indicates balanced Miller and input charge characteristics, supporting stable switching behavior in hard-switched topologies and predictable turn-on/turn-off timing when driven with standard gate drivers.
SIR494DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR494DP-T1-GE3 FAQ
1.How can I place an order for SIR494DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR494DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR494DP-T1-GE3 reliable?
The price and inventory of SIR494DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR494DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR494DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR494DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR494DP-T1-GE3?
SIR494DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR494DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR494DP-T1-GE3?
For technical support, including SIR494DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR494DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR494DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR494DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR494DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR494DP-T1-GE3?
All SIR494DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR494DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR494DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR494DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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