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Vishay Siliconix SIR496DP-T1-GE3
- Part No.:
- SIR496DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR496DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 35A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,385
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Product details
Overview
SIR496DP-T1-GE3 from Vishay Siliconix is a lead-free, halogen-free N-channel TrenchFET® Power MOSFET optimized for high-current DC/DC low-side switching and point-of-load (POL) applications. It features 20 V VDS, 4.5 mΩ RDS(on) at VGS = 10 V, 35 A package-limited continuous drain current, 13.2 nC total gate charge, and PowerPAK® SO-8 packaging with exposed-drain thermal pad.
For engineers reviewing the SIR496DP-T1-GE3 datasheet, SIR496DP-T1-GE3 pinout, SIR496DP-T1-GE3 application, or SIR496DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V drive, 100 % avalanche-tested ruggedness, RoHS/IEC 61249-2-21 compliance, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (13.2 nC typical at 4.5 V) and low Crss (195 pF), enabling efficient operation in synchronous buck converters. Its gate threshold voltage (1.2–2.5 V) supports direct logic-level drive from 3.3 V or 5 V controllers.
The device is characterized for operation up to 150 °C junction temperature, with RthJC = 3.4 °C/W (typical) and RthJA = 20 °C/W (typical, t ≤ 10 s), leveraging the PowerPAK® SO-8's exposed-drain construction for enhanced thermal conduction to PCB copper. It includes 100 % Rg and avalanche testing per production lot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; suitable for 12 V input rail systems with margin. |
| RDS(on) @ VGS = 10 V | 4.5 mΩ - Enables <1 W conduction loss at 15 A DC, critical for high-efficiency POL stages. |
| RDS(on) @ VGS = 4.5 V | 5.8 mΩ - Ensures robust low-side switch performance with standard 3.3 V or 4.5 V gate drivers. |
| ID (continuous, package-limited) | 35 A - Rated at TC = 25 °C; derates to 20.5 A at TC = 70 °C per thermal limits. |
| Qg (total gate charge) | 13.2 nC @ 4.5 V - Low drive requirement reduces gate driver power loss and enables high-frequency PWM. |
| Body diode VSD | 0.75–1.1 V @ IS = 3 A - Low forward drop minimizes reverse-recovery losses in synchronous rectification. |
| trr | 22–44 ns @ IF = 10 A, dI/dt = 100 A/µs - Fast recovery supports high-frequency switching without excessive ringing. |
Pinout & Package
PowerPAK® SO-8 is a leadless, surface-mount package with 8 terminals in standard SO-8 footprint (6.15 mm × 5.15 mm), featuring an exposed-drain thermal pad on the bottom side for direct PCB heat sinking. Pin numbering follows JEDEC MS-012 standard with pins 1–4 on left side and 5–8 on right side (bottom view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die drain and exposed bottom pad - primary current path and thermal conduction path to PCB. |
| 5 | Gate (G) | Single gate input - controls channel conduction; requires low-impedance drive due to 0.2–1.4 Ω gate resistance. |
| Source (S) | Source (S) | Terminals 1–4 and 6–8 are internally tied to source; provides return path for load current and reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 4.5 mΩ RDS(on) at 10 V in SO-8 footprint - delivers DPAK-level performance in smaller area. |
| 100 % Rg tested | Guarantees gate resistance between 0.2–1.4 Ω - ensures consistent turn-on/turn-off timing across production lots. |
| 100 % avalanche rated | Rated for 20 mJ single-pulse avalanche energy - protects against inductive switching transients in DC/DC converters. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and telecom designs. |
| Exposed-drain thermal pad | RthJC = 3.4 °C/W (typ) - enables direct heat transfer from die to PCB, reducing ΔTJ-C by >40 °C vs. standard SO-8. |
Applications
| Server VRM Output Stage | Industrial PLC Power Supply |
|---|---|
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion delivering up to 100 A to CPU cores. IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converter. Use Value: 4.5 mΩ RDS(on) at 10 V and 5.8 mΩ at 4.5 V minimize conduction loss; fast trr (22 ns) suppresses shoot-through risk during dead-time control. |
Use Scenario: 24 V input DC/DC module powering I/O modules, sensors, and communication interfaces in factory automation. IC Role / Device Role: Low-side switch in isolated or non-isolated POL regulator feeding FPGA or microcontroller rails. Use Value: 35 A package rating and 100 % avalanche testing ensure reliability under motor startup surges and EMI-induced transients. |
| Telecom Base Station PSU | Automotive ADAS Camera Module |
Use Scenario: Intermediate bus converter (48 V → 12 V) supplying RF power amplifiers and digital signal processors. IC Role / Device Role: Primary low-side switch in high-frequency (500 kHz–1 MHz) synchronous buck stage. Use Value: Low Qg (13.2 nC @ 4.5 V) and Crss (195 pF) reduce switching loss and EMI; PowerPAK SO-8 footprint allows layout reuse from legacy SO-8 designs. |
Use Scenario: Compact 12 V → 3.3 V/1.8 V power delivery for image sensor and ISP in rear-view or surround-view camera systems. IC Role / Device Role: Low-side switch in thermally constrained POL regulator mounted directly behind camera housing. Use Value: Exposed-drain thermal pad achieves RthJC = 3.4 °C/W - maintains TJ < 125 °C even at 25 A with minimal copper area, meeting AEC-Q200 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR476DP-T1-GE3 | 20 V, 3.0 mΩ @ 10 V, 40 A ID - lower RDS(on) but higher Qg (16.5 nC @ 4.5 V). | Better conduction efficiency above 20 A; less suitable for ultra-high-frequency (>1 MHz) operation due to higher gate charge. | Select when minimizing I²R loss dominates over switching loss - e.g., high-duty-cycle server VRMs. |
| IRLHS6242PBF | 25 V, 4.8 mΩ @ 4.5 V, 25 A ID - wider VDS rating but lower current capability and no 100 % avalanche test. | Acceptable for 24 V input systems with lower current demand; lacks ruggedness validation for harsh industrial environments. | Choose only if 25 V rating is required and avalanche immunity is not mission-critical - e.g., consumer-grade power adapters. |
Compared with SiR476DP-T1-GE3, SIR496DP-T1-GE3 trades 1.3 mΩ higher RDS(on) for 3.3 nC lower Qg, favoring high-frequency efficiency; versus IRLHS6242PBF, it offers +10 A current headroom and certified avalanche ruggedness essential for industrial POL reliability.
Availability
SIR496DP-T1-GE3 is available at Aetrix Electronics and suitable for high-current DC/DC converters, point-of-load regulators, and industrial motor drive gate drivers requiring stable component supply, long-term lifecycle support, and verified halogen-free compliance.
Supply support for SIR496DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIR496DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-density, high-efficiency DC/DC conversion in space-constrained computing, telecom, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SIR496DP-T1-GE3?
The SIR496DP-T1-GE3 has a package-limited continuous drain current of 35 A at TC = 25 °C, derating to 20.5 A at TC = 70 °C. This rating is defined under steady-state thermal conditions with proper PCB copper heatsinking and is not limited by silicon but by package thermal capacity.
Does SIR496DP-T1-GE3 support 3.3 V gate drive?
Yes, SIR496DP-T1-GE3 is fully specified for 4.5 V gate drive, with RDS(on) = 5.8 mΩ typical at VGS = 4.5 V and ID = 10 A. Its VGS(th) range of 1.2–2.5 V ensures reliable enhancement-mode turn-on with 3.3 V logic, though full RDS(on) performance requires ≥4.5 V.
Is SIR496DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIR496DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm outline and pin assignment as JEDEC MS-012 SO-8. However, its drain terminals are extended and the bottom-side thermal pad requires matching PCB land pattern - not just footprint compatibility.
What thermal performance advantage does SIR496DP-T1-GE3 offer over standard SO-8 MOSFETs?
SIR496DP-T1-GE3 achieves RthJC = 3.4 °C/W (typ), comparable to DPAK packages, versus ~16 °C/W for standard SO-8. This reduces junction-to-case temperature rise by >40 °C at 20 W dissipation, enabling higher current density and improved system thermal margin in compact layouts.
Is SIR496DP-T1-GE3 qualified for automotive applications?
SIR496DP-T1-GE3 is not AEC-Q101 qualified. It is designed for industrial, computing, and telecom applications. For automotive ADAS or body electronics, Vishay offers AEC-Q101-qualified variants such as the SQ series - SIR496DP-T1-GE3 itself lacks automotive stress testing and qualification documentation.
SIR496DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1570 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR496DP-T1-GE3 FAQ
1.How can I place an order for SIR496DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR496DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR496DP-T1-GE3 reliable?
The price and inventory of SIR496DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR496DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR496DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR496DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR496DP-T1-GE3?
SIR496DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR496DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR496DP-T1-GE3?
For technical support, including SIR496DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR496DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR496DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR496DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR496DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR496DP-T1-GE3?
All SIR496DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR496DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR496DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR496DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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