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Vishay Siliconix SIR500DP-T1-UE3
- Part No.:
- SIR500DP-T1-UE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR500DP-T1-UE3.pdf
- Description:
- N-CHANNEL 30 V (D-S) MOSFET 150
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SIR500DP-T1-UE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.47 mΩ at VGS = 10 V and 0.68 mΩ at VGS = 4.5 V, with 54.3 nC total gate charge and 350.8 A continuous drain current (TC = 25 °C), optimized for high-efficiency DC/DC converters and synchronous rectification.
For engineers reviewing the SIR500DP-T1-UE3 datasheet, SIR500DP-T1-UE3 pinout, SIR500DP-T1-UE3 application, or SIR500DP-T1-UE3 equivalent, this page provides verified electrical parameters, thermal resistance values, body diode characteristics, gate drive timing data, and validated alternative parts for high-current, low-voltage switching designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low RDS(on) × Qg figure-of-merit, enabling high power density in compact layouts. Its 30 V VDS rating and 150 °C maximum junction temperature support robust operation in demanding POL and battery management systems.
The device features 100 % Rg and UIS tested units, integrated source-drain body diode with 65 ns reverse recovery time (trr) and 86 nC Qrr, and a thermally enhanced leadless PowerPAK SO-8 package with exposed copper drain pads for low RthJC = 0.9 °C/W (typical).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input rail applications. |
| RDS(on) @ VGS = 10 V | 0.47 mΩ max - Enables <1 W conduction loss at 300 A, critical for high-current server VRMs. |
| RDS(on) @ VGS = 4.5 V | 0.68 mΩ max - Ensures low on-resistance under logic-level gate drive, supporting 3.3 V/5 V controller compatibility. |
| Qg typ. | 54.3 nC - Low gate charge reduces driver power loss and enables fast switching with minimal EMI. |
| ID continuous (TC = 25 °C) | 350.8 A - Supports single-device implementation in high-power POL modules without paralleling. |
| RthJC max. | 1.2 °C/W - Enables efficient heat transfer to heatsink or PCB copper, essential for >200 W/in² power density. |
| VSD @ IS = 5 A | 0.69–1.1 V - Low forward voltage of integrated body diode minimizes reverse conduction loss in synchronous rectifier mode. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, thermally enhanced), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with exposed copper drain terminals on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four exposed-copper drain pads provide low-inductance, high-current path to PCB ground plane or heatsink. |
| G (Gate) | Control terminal | Single gate pad located at pin 1 corner; requires controlled impedance routing to minimize ringing during 20+ A/ns transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on) × Qg FOM for reduced switching + conduction losses in high-frequency DC/DC stages. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy handling up to 125 mJ per pulse. |
| PowerPAK SO-8 package | Provides 3× lower RthJC vs. standard SO-8, enabling >300 W dissipation with minimal external heatsinking. |
| Low Qgd/Qg ratio | Qgd = 8.7 nC (typ.) yields Miller plateau control ideal for hard-switched synchronous buck topologies. |
| Body diode trr = 65 ns | Reduces reverse recovery loss and associated voltage spikes in non-overlap-controlled synchronous rectifiers. |
Applications
| Server Voltage Regulator Modules (VRMs) | Industrial 48 V-to-12 V DC/DC Converters |
|---|---|
|
Use Scenario: High-current point-of-load regulation for CPU/GPU cores in AI servers requiring >300 A per phase. IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck converter with 300–500 kHz switching frequency. Use Value: 0.47 mΩ RDS(on) limits conduction loss to <1.5 W at 300 A, enabling >95 % efficiency at full load without forced air cooling. |
Use Scenario: Primary-side switch in isolated 48 V input telecom power supply feeding industrial PLC backplanes. IC Role / Device Role: Main switching element in active-clamp forward or LLC resonant converter primary stage. Use Value: 30 V rating and 350.8 A current capability allow single-device use in 1–2 kW designs, reducing component count and layout complexity. |
| Battery Management Systems (BMS) | High-Power Load Switches |
|
Use Scenario: Bidirectional current control in 24 V lithium-ion battery packs for electric material handling equipment. IC Role / Device Role: Solid-state contactor replacement for main pack disconnect and cell balancing paths. Use Value: 150 °C TJ rating and 94.6 A continuous source-drain diode current support safe reverse conduction during regenerative braking events. |
Use Scenario: Hot-swap and inrush current limiting in 12 V automotive ADAS domain controllers. IC Role / Device Role: Low-loss power path switch with integrated body diode for reverse polarity protection. Use Value: 0.68 mΩ RDS(on) at 4.5 V gate drive ensures <0.5 V drop at 70 A, eliminating need for external Schottky diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP016N04L | RDS(on) = 1.6 mΩ @ 10 V, 40 V VDS, TO-220 package, RthJC = 1.4 °C/W | Higher RDS(on) and larger footprint; suited for lower-current, cost-sensitive industrial SMPS. | Select when board space allows TO-220 mounting and 40 V blocking margin is required over 30 V. |
| ON Semiconductor NTMFS5C673NL | RDS(on) = 0.52 mΩ @ 10 V, same PowerTrench® 5x6 mm package, 60 V VDS, Qg = 62 nC | Higher voltage rating and slightly higher gate charge; compatible footprint but not pin-to-pin due to different pin 1 marking. | Choose for 48 V input designs needing 60 V VDS margin while retaining similar thermal performance and layout reuse. |
Compared with IPP016N04L and NTMFS5C673NL, the SIR500DP-T1-UE3 offers the lowest RDS(on) in its class for 30 V operation, enabling highest current density in space-constrained VRMs and POLs where thermal management is critical.
Availability
SIR500DP-T1-UE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, and battery management systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-volume production.
Supply support for SIR500DP-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR500DP-T1-UE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for ultra-high-current, low-voltage synchronous rectification and POL applications demanding minimal conduction and switching losses.
FAQ
What is the maximum continuous drain current rating for SIR500DP-T1-UE3 at case temperature of 70 °C?
The SIR500DP-T1-UE3 supports 280.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 350.8 A rating at 25 °C due to thermal limitations, and must be validated against actual PCB copper area and heatsinking in the target application layout.
Does SIR500DP-T1-UE3 have a guaranteed avalanche energy rating?
Yes, the SIR500DP-T1-UE3 has a guaranteed single-pulse avalanche energy rating of 125 mJ (EAS) and single-pulse avalanche current of 50 A (IAS) under L = 0.1 mH test conditions. These values are production-tested and documented in the Absolute Maximum Ratings section of the datasheet.
What is the typical gate threshold voltage range for SIR500DP-T1-UE3?
The SIR500DP-T1-UE3 has a gate-source threshold voltage (VGS(th)) range of 1.0 V to 2.2 V at TJ = 25 °C and ID = 250 μA. This low threshold enables reliable turn-on with 3.3 V or 4.5 V gate drivers, and the negative temperature coefficient (−0.42 mV/°C) ensures inherent current sharing stability in paralleled configurations.
How does the PowerPAK SO-8 package of SIR500DP-T1-UE3 differ from standard SO-8 in thermal performance?
The PowerPAK SO-8 package used by SIR500DP-T1-UE3 features exposed copper drain pads on the bottom surface, achieving RthJC = 0.9 °C/W (typical), compared to ~3–4 °C/W for standard SO-8. This 3× improvement enables direct thermal coupling to PCB ground planes or heatsinks, making SIR500DP-T1-UE3 suitable for >200 W power dissipation without additional thermal interface materials.
Is SIR500DP-T1-UE3 suitable for synchronous rectification in a 400 kHz buck converter?
Yes, the SIR500DP-T1-UE3 is well-suited for synchronous rectification at 400 kHz due to its low Qg (54.3 nC typ.), fast switching times (td(off) = 47 ns typ. at VGEN = 4.5 V), and low RDS(on) at 4.5 V (0.68 mΩ max). Its body diode trr of 65 ns minimizes reverse recovery loss, and the device is 100 % UIS tested to withstand commutation stress.
SIR500DP-T1-UE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 85.9A (Ta), 350.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.47mOhm @20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8960 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR500DP-T1-UE3 FAQ
1.How can I place an order for SIR500DP-T1-UE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR500DP-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR500DP-T1-UE3 reliable?
The price and inventory of SIR500DP-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR500DP-T1-UE3 is usually 5 days.
3.What payment methods are accepted for SIR500DP-T1-UE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR500DP-T1-UE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR500DP-T1-UE3?
SIR500DP-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR500DP-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR500DP-T1-UE3?
For technical support, including SIR500DP-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR500DP-T1-UE3 requirements.
6.How does Aetrix verify that SIR500DP-T1-UE3 is sourced from the original manufacturer or authorized distributors?
All SIR500DP-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR500DP-T1-UE3 meets industry standards.
7.What is the process for return or replacement of SIR500DP-T1-UE3?
All SIR500DP-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR500DP-T1-UE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR500DP-T1-UE3 part is unused and in its original packaging.
Return procedure for SIR500DP-T1-UE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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