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Vishay Siliconix SIR5108DP-T1-RE3
- Part No.:
- SIR5108DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR5108DP-T1-RE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:12,000
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Product details
Overview
SIR5108DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.0105 Ω at VGS = 10 V, Qg = 11.2 nC (typ.), and continuous drain current ID = 55.9 A (TC = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIR5108DP-T1-RE3 datasheet, SIR5108DP-T1-RE3 pinout, SIR5108DP-T1-RE3 application, or SIR5108DP-T1-RE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% Rg and UIS testing, and thermal performance with RthJC = 1.5 °C/W (typ.) for high-power-density board-level designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to achieve a tuned trade-off between conduction loss (RDS(on)) and switching loss (Qg, Qoss, Ciss), with RDS(on) = 0.0124 Ω at VGS = 7.5 V and Ciss = 1150 pF (typ.) at VDS = 50 V. Its gate threshold voltage VGS(th) ranges from 2 V to 4 V, enabling robust drive compatibility with standard 7.5–10 V gate drivers.
The device integrates a fast body diode with trr = 40 ns (typ.), Qrr = 43 nC (typ.), and VSD = 0.77 V (typ.) at IS = 5 A, supporting efficient reverse recovery in hard-switched and synchronous rectifier topologies without external Schottky assistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; supports primary-side switch operation in 48 V input DC/DC and offline SMPS designs. |
| RDS(on) max. @ VGS = 10 V | 0.0105 Ω - Enables <1 W conduction loss at 10 A, critical for thermally constrained power stages. |
| Qg typ. | 11.2 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in high-frequency converters. |
| ID continuous @ TC = 25 °C | 55.9 A - High current rating supports single-device solutions in 100–200 W power supplies and motor drives. |
| RthJC max. | 1.9 °C/W - Low junction-to-case thermal resistance allows direct heatsinking via PCB copper or external metal slug for thermal management. |
| Body diode trr | 40 ns (typ.) - Fast reverse recovery minimizes switching loss and EMI in synchronous rectifier applications. |
| VGS(th) | 2–4 V - Ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with bottom-side copper thermal pad for enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 5 | Gate (G) | Single gate terminal with Rg = 0.4–1.7 Ω (typ./max); optimized for low-noise, stable gate drive routing. |
| 6, 7, 8, D-Pad | Drain (D) | Four drain leads plus large exposed bottom copper pad provide low-inductance, high-current drain path and thermal conduction to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on) × Qoss FOM for reduced switching + conduction loss trade-off in high-frequency power stages. |
| 100 % Rg tested | Guarantees gate resistance consistency (0.4–1.7 Ω), ensuring predictable gate drive timing and EMI behavior across production lots. |
| 100 % UIS tested | Validates ruggedness under unclamped inductive switching stress-critical for motor drive and flyback primary switch reliability. |
| Exposed drain thermal pad | Enables <1.9 °C/W junction-to-case thermal resistance, allowing >65 W power dissipation with minimal heatsink area. |
| Fast body diode (trr = 40 ns) | Reduces reverse recovery loss and voltage overshoot in synchronous rectifiers without requiring external snubbers or Schottky diodes. |
Applications
| Server VRM / CPU Core Power | Industrial DC/DC Converter |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to modern CPUs and ASICs. IC Role / Device Role: Synchronous rectifier (low-side switch) operating at 300–1000 kHz with 40–60 A per phase. Use Value: Low RDS(on) (0.0105 Ω) and low Qg (11.2 nC) minimize conduction and switching losses, improving efficiency by ≥0.5% at full load versus Gen IV alternatives. |
Use Scenario: Isolated 48 V–12 V step-down converter in programmable logic controllers and industrial HMIs. IC Role / Device Role: Primary-side switch in active-clamp forward or LLC resonant topology. Use Value: 100 V VDS rating and UIS-tested ruggedness support 60 V bus transients; fast body diode enables self-driven synchronous rectification on secondary side. |
| Automotive On-Board Charger (OBC) | Brushless DC Motor Inverter |
|
Use Scenario: Bidirectional AC/DC and DC/DC stage in 6.6 kW OBC for EVs, operating up to 100 kHz. IC Role / Device Role: High-side switch in interleaved PFC and isolated DC/DC stages. Use Value: RDS(on) × Qoss optimization reduces switching loss at elevated temperatures, extending thermal headroom during continuous charging cycles. |
Use Scenario: 3-phase inverter driving 1–3 kW BLDC motors in HVAC compressors and power tools. IC Role / Device Role: Half-bridge low-side switch with integrated body diode conducting freewheeling current. Use Value: 59.8 A continuous source-drain diode current and 40 ns trr ensure low-loss, low-EMI commutation without external diodes or gate timing adjustments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | RDS(on) = 0.004 Ω @ 10 V (lower), but Qg = 34 nC (higher); TO-220FP package, no exposed thermal pad. | Higher conduction efficiency but slower switching; requires heatsink mounting and larger PCB footprint. | Select when thermal interface constraints allow discrete heatsinking and conduction loss dominates system efficiency. |
| ON Semiconductor NTMFS5C670NL | RDS(on) = 0.0067 Ω @ 10 V; Power56 package (5.0 × 6.0 mm), RthJC = 2.0 °C/W (slightly higher). | Similar footprint but lower RDS(on); lacks 100% UIS test and has higher Ciss (1450 pF). | Select when ultra-low RDS(on) is prioritized over avalanche ruggedness and switching speed in non-critical industrial loads. |
Compared with IPP040N10N5 and NTMFS5C670NL, the SIR5108DP-T1-RE3 offers the best balance of low RDS(on) × Qg FOM, proven UIS ruggedness, and compact PowerPAK SO-8 thermal performance-making it optimal for space-constrained, high-reliability synchronous rectifier and primary-switch applications where both efficiency and robustness matter.
Availability
SIR5108DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR5108DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and ruggedness.
The SIR5108DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-current power conversion in datacenter, industrial, and automotive applications where low FOM and proven ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for SIR5108DP-T1-RE3 at case temperature 70 °C?
The SIR5108DP-T1-RE3 supports 44.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual board layout, copper area, and airflow conditions in the end application. The SIR5108DP-T1-RE3 datasheet provides detailed thermal derating curves on page 5.
Does SIR5108DP-T1-RE3 have a fully characterized body diode for synchronous rectification?
Yes, the SIR5108DP-T1-RE3 features a fully characterized body diode with trr = 40 ns (typ.), Qrr = 43 nC (typ.), and VSD = 0.77 V (typ.) at IS = 5 A. These parameters are measured and guaranteed per the datasheet, enabling reliable use in synchronous rectifier configurations without external diodes. The SIR5108DP-T1-RE3 body diode is also rated for 59.8 A continuous source-drain current at TC = 25 °C.
Is SIR5108DP-T1-RE3 suitable for use in automotive-grade power supplies?
The SIR5108DP-T1-RE3 operates across –55 °C to +150 °C junction temperature and is 100% UIS tested, meeting key requirements for under-hood automotive power stages. While not AEC-Q101 qualified out-of-box, it is widely deployed in automotive on-board chargers and DC/DC modules where customers perform their own qualification. The SIR5108DP-T1-RE3 thermal and ruggedness specs align with typical automotive transient and thermal stress profiles.
What is the gate-source leakage current specification for SIR5108DP-T1-RE3?
The SIR5108DP-T1-RE3 specifies gate-source leakage current IGSS ≤ 100 nA at VGS = ±20 V and TJ = 25 °C, per the Static Electrical Characteristics table. This low leakage ensures minimal gate drive current loss and stable biasing in high-impedance gate networks. The SIR5108DP-T1-RE3 datasheet confirms this value is tested and guaranteed across production.
How does the PowerPAK SO-8 package of SIR5108DP-T1-RE3 improve thermal performance compared to standard SO-8?
The PowerPAK SO-8 package of the SIR5108DP-T1-RE3 replaces the plastic body with an exposed copper drain pad on the bottom surface, reducing RthJC to 1.5 °C/W (typ.)-nearly 5× better than standard SO-8. This enables direct thermal coupling to PCB copper planes or heatsinks, supporting >65 W power dissipation. The SIR5108DP-T1-RE3 package drawing (Doc #71655) details recommended pad layouts for optimal thermal transfer.
SIR5108DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.4A (Ta), 55.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.45mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR5108DP-T1-RE3 FAQ
1.How can I place an order for SIR5108DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR5108DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR5108DP-T1-RE3 reliable?
The price and inventory of SIR5108DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5108DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR5108DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5108DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR5108DP-T1-RE3?
SIR5108DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR5108DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR5108DP-T1-RE3?
For technical support, including SIR5108DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5108DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR5108DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR5108DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5108DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR5108DP-T1-RE3?
All SIR5108DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5108DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR5108DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR5108DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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