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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5110DP-T1-RE3

Name: SIR5110DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR5110DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR5110DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5110DP-T1-RE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET POW

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Product details

Overview

SIR5110DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0125 Ω at V_GS = 10 V, Q_g = 9.7 nC (typ.), and continuous drain current I_D = 47.6 A at T_C = 25 °C. It is optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR5110DP-T1-RE3 datasheet, SIR5110DP-T1-RE3 pinout, SIR5110DP-T1-RE3 application, or SIR5110DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100 % R_g and UIS tested reliability, and thermal performance with R_thJC = 1.7 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET uses TrenchFET® Gen V silicon technology to achieve a tuned balance between conduction loss (R_DS(on)) and switching loss (Q_g, Q_oss). Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, enabling robust turn-on with standard 7.5 V or 10 V gate drivers.

The device features a fully rated body diode with t_rr = 46 ns (typ.) and Q_rr = 43 nC (typ.) at I_F = 10 A, supporting efficient hard-switched and synchronous rectifier operation. Thermal design is enabled by its low junction-to-case resistance and leadless PowerPAK SO-8 footprint with exposed drain copper on the bottom side.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for primary-side switch or high-side synchronous rectifier in 48 V input systems.
R_DS(on) max @ V_GS = 10 V	0.0125 Ω - Enables ≤ 1.25 W conduction loss at 10 A, critical for thermally constrained power stages.
Q_g typ.	9.7 nC - Low gate charge reduces driver power and enables high-frequency PWM operation up to 1 MHz.
I_D continuous @ T_C = 25 °C	47.6 A - Supports high-current output stages without forced air cooling when mounted on ≥1"×1" FR4 board.
R_thJC max	2.1 °C/W - Allows direct heatsinking to PCB copper or external metal core for thermal management in industrial PSUs.
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard logic-level or analog gate drivers.
E_AS	20 mJ - Rated single-pulse avalanche energy supports robustness against inductive switching transients.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), JEDEC-compliant footprint with solderable bottom-side drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Exposed copper drain pad on bottom surface provides primary thermal path and low-inductance power return.
G (Gate)	Control input	Single top-side gate terminal; requires <1.7 Ω gate resistance for optimal switching speed and EMI control.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction losses in high-frequency DC/DC stages.
100 % R_g and UIS tested	Ensures gate robustness and avalanche ruggedness per unit, eliminating field failures due to gate oxide stress or inductive kick.
PowerPAK SO-8 leadless package	Provides 3× lower thermal resistance vs. standard SO-8 and eliminates lead inductance for cleaner switching waveforms.
Body diode t_rr = 46 ns (typ.)	Minimizes reverse recovery loss and associated voltage overshoot in synchronous rectifier configurations.
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C requirements for environmentally compliant industrial and telecom designs.

Applications

Server VRM	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter delivering 12 V @ >100 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with synchronous rectification. Use Value: Low R_DS(on) × Q_g minimizes total power loss (<1.5 W at 10 A), enabling >95 % efficiency and compact thermal design.	Use Scenario: 48 V to 12 V isolated DC/DC module for factory automation controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology. Use Value: Fast body diode (t_rr = 46 ns) and low Q_oss reduce dead-time loss and improve light-load efficiency by 1.2 %.
Motor Drive Inverter	Telecom PSU
Use Scenario: 24 V three-phase inverter driving BLDC motors in HVAC blowers. IC Role / Device Role / Timing Role: Half-bridge high-side switch with 20 kHz PWM and fast commutation. Use Value: 100 % UIS tested rating ensures survival during motor stall or short-circuit events without external snubbers.	Use Scenario: 380 V DC input front-end PFC + isolated 48 V output telecom rectifier. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or asymmetrical half-bridge. Use Value: 100 V V_DS margin accommodates 380 V DC bus spikes up to 420 V, meeting IEC 61000-4-5 surge immunity.

Server VRM

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter delivering 12 V @ >100 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with synchronous rectification.

Use Value: Low R_DS(on) × Q_g minimizes total power loss (<1.5 W at 10 A), enabling >95 % efficiency and compact thermal design.

Use Scenario: 48 V to 12 V isolated DC/DC module for factory automation controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology.

Use Value: Fast body diode (t_rr = 46 ns) and low Q_oss reduce dead-time loss and improve light-load efficiency by 1.2 %.

Motor Drive Inverter

Telecom PSU

Use Scenario: 24 V three-phase inverter driving BLDC motors in HVAC blowers.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with 20 kHz PWM and fast commutation.

Use Value: 100 % UIS tested rating ensures survival during motor stall or short-circuit events without external snubbers.

Use Scenario: 380 V DC input front-end PFC + isolated 48 V output telecom rectifier.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or asymmetrical half-bridge.

Use Value: 100 V V_DS margin accommodates 380 V DC bus spikes up to 420 V, meeting IEC 61000-4-5 surge immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V; Q_g = 71 nC; TO-220 package; R_thJC = 1.5 °C/W but larger footprint and higher parasitic inductance.	Lower switching frequency limit (~100 kHz); unsuitable for space-constrained multilayer PCBs due to through-hole mounting.	Select only if legacy TO-220 layout exists and thermal mass outweighs efficiency needs.
SiR872DP-T1-RE3	R_DS(on) = 0.0075 Ω @ 10 V; Q_g = 15.5 nC; same PowerPAK SO-8 package; higher current rating (I_D = 60 A).	Better conduction loss but higher gate drive demand; may require stronger gate driver for same switching speed.	Choose when system efficiency >96 % is required and gate drive capability supports ≥15 nC charge.

Compared with IRF540NPBF, SIR5110DP-T1-RE3 delivers 3.5× lower R_DS(on) and 7× lower Q_g, enabling higher frequency and smaller magnetics; versus SiR872DP-T1-RE3, it trades 40 % higher R_DS(on) for 37 % lower Q_g, favoring high-frequency, medium-power applications where gate drive strength is limited.

Availability

SIR5110DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIR5110DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIR5110DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum junction temperature rating for SIR5110DP-T1-RE3?

The SIR5110DP-T1-RE3 has an operating junction temperature range of –55 °C to +150 °C. This allows reliable operation in harsh environments such as industrial motor drives or enclosed telecom power modules where ambient temperatures exceed 85 °C. Derating curves in the datasheet confirm usable current capacity down to 38.1 A at T_C = 70 °C.

Does SIR5110DP-T1-RE3 support gate drive voltages below 10 V?

Yes, SIR5110DP-T1-RE3 is fully specified at V_GS = 7.5 V, with R_DS(on) = 0.016 Ω (max). Its V_GS(th) of 2–4 V ensures strong enhancement-mode behavior even with 5 V logic-level drivers, though full-rated current requires ≥7.5 V to maintain low conduction loss.

Is SIR5110DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIR5110DP-T1-RE3 is explicitly recommended for synchronous rectification. Its fast body diode (t_rr = 46 ns typ., Q_rr = 43 nC) and low Q_oss minimize reverse recovery loss and enable precise timing control in zero-voltage switching (ZVS) regions of LLC topologies.

What is the thermal resistance from junction to ambient for SIR5110DP-T1-RE3 under standard conditions?

Under JEDEC test conditions (surface-mounted on 1" × 1" FR4 board), the SIR5110DP-T1-RE3 has R_thJA = 21 °C/W (typ.) and 26 °C/W (max). This value assumes no additional heatsinking; adding 1 oz. copper pour or thermal vias can reduce effective R_thJA by up to 40 % in production layouts.

How is the PowerPAK SO-8 package of SIR5110DP-T1-RE3 different from standard SO-8?

The PowerPAK SO-8 package used by SIR5110DP-T1-RE3 is leadless, with the drain terminals exposed as bare copper on the bottom surface. Unlike standard SO-8, it eliminates bond wire inductance and provides a direct thermal path to the PCB, achieving R_thJC = 1.7 °C/W (typ.)-nearly 3× better than plastic SO-8 equivalents.

SIR5110DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13.5A (Ta), 47.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 59.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5110DP-T1-RE3 FAQ

1.How can I place an order for SIR5110DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5110DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5110DP-T1-RE3 reliable?

The price and inventory of SIR5110DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5110DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR5110DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5110DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5110DP-T1-RE3?

SIR5110DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5110DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5110DP-T1-RE3?

For technical support, including SIR5110DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5110DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR5110DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR5110DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5110DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR5110DP-T1-RE3?

All SIR5110DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5110DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5110DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR5110DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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