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Vishay Siliconix SIR512DP-T1-RE3
- Part No.:
- SIR512DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR512DP-T1-RE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:7,329
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Product details
Overview
SIR512DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, rated for 100 A continuous drain current at TC = 25 °C, with RDS(on) of 4.5 mΩ at VGS = 10 V and total gate charge of 30.5 nC (typ.) at VGS = 7.5 V. It serves as a high-efficiency primary-side switch or synchronous rectifier in high-density DC/DC converters.
For engineers reviewing the SIR512DP-T1-RE3 datasheet, SIR512DP-T1-RE3 pinout, SIR512DP-T1-RE3 application, or SIR512DP-T1-RE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100% UIS testing, leadless PowerPAK SO-8 thermal performance (RthJC = 1.0 °C/W typ.), and suitability for OR-ing, hot-swap, and battery management systems requiring robust avalanche capability (EAS = 80 mJ).
Technical Context
This MOSFET employs Vishay's TrenchFET Gen V process to optimize conduction and switching trade-offs: its RDS(on) × Qg FOM is minimized for high-frequency hard-switching, while RDS(on) × Qoss is tuned specifically for resonant and soft-switching topologies. The device features fully characterized body diode recovery (trr = 52 ns typ., Qrr = 69 nC) and guaranteed 100% gate resistance (Rg = 0.5–1.9 Ω) and unclamped inductive switching (UIS) screening.
Thermally, it leverages the PowerPAK SO-8's exposed-drain copper pad for low junction-to-case resistance (1.0 °C/W typ.), enabling high-power operation on compact PCBs with minimal heatsinking. Its gate threshold voltage (VGS(th) = 2–4 V) and transconductance (gfs = 75 S typ.) support stable drive across industrial temperature range (–55 to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; supports primary-side switching in 48 V input DC/DC and 100 V bus OR-ing applications. |
| RDS(on) max | 4.5 mΩ at VGS = 10 V - Enables <1 W conduction loss at 100 A, critical for high-current synchronous rectification. |
| Qg typ. | 30.5 nC at VGS = 7.5 V - Low gate charge reduces driver power and switching losses in 300–1000 kHz converters. |
| ID (cont.) | 100 A at TC = 25 °C - High current rating allows single-device implementation in 500 W+ power stages without paralleling. |
| EAS | 80 mJ - Robust avalanche energy rating ensures reliability during transient overloads and inductive turn-off events. |
| RthJC | 1.0 °C/W (typ.) - Low junction-to-case thermal resistance enables direct thermal coupling to heatsink or copper plane for thermal management. |
| VGS(th) | 2–4 V - Gate threshold compatible with standard 5 V and 3.3 V logic-level drivers without level-shifting. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large exposed copper pad; primary thermal path and high-current return path. |
| G (Gate) | Control input | Single gate terminal located at Pin 1 side; optimized layout minimizes gate loop inductance for fast, stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V process | Delivers best-in-class RDS(on) × Qoss FOM for LLC and ZVS converters, reducing switching losses by up to 20% vs. prior-gen equivalents. |
| 100% Rg and UIS tested | Ensures gate resistance consistency (0.5–1.9 Ω) and verified avalanche ruggedness-no derating needed for inductive load transients. |
| Exposed-drain thermal pad | Enables 1.0 °C/W typical junction-to-case resistance, supporting >90 W dissipation with moderate heatsinking or 4-layer board copper. |
| Low Qgd / Qgs ratio | Qgd = 2.3 nC, Qgs = 17.9 nC - Reduces Miller effect, improving noise immunity and enabling reliable operation with gate drivers up to 2 A peak. |
| Body diode trr & Qrr | trr = 52 ns (typ.), Qrr = 69 nC (typ.) - Fast, low-charge recovery minimizes reverse-recovery losses in synchronous rectification mode. |
Applications
| Synchronous Rectification | Primary-Side Switch |
|---|---|
Use Scenario: Secondary-side rectification in isolated 48 V–60 V input DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode; driven synchronously with transformer secondary waveform. Use Value: Reduces conduction loss by >50% vs. 60 V Schottky, enabling >96% efficiency at full load with 4.5 mΩ RDS(on) and low Qrr. |
Use Scenario: High-current primary switch in half-bridge or active-clamp forward converters for industrial power supplies. IC Role / Device Role / Timing Role: Main switching element handling 100 A peak currents at 100 kHz–500 kHz switching frequencies. Use Value: Low RDS(on) × Qg FOM and 80 mJ EAS ensure minimal switching loss and reliable operation under short-circuit and overload conditions. |
| OR-ing / Hot-Swap Control | Battery Management System |
Use Scenario: Redundant 12 V–48 V power rail OR-ing in network switches and storage controllers. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET providing bidirectional current control and fault isolation. Use Value: Ultra-low RDS(on) limits voltage drop to <0.5 V at 80 A, minimizing power loss and thermal rise during parallel operation. |
Use Scenario: Charge/discharge path switch in 3–4 cell Li-ion battery packs for portable medical and test equipment. IC Role / Device Role / Timing Role: High-side or low-side protection switch controlling main battery current flow with overcurrent and short-circuit response. Use Value: 100% UIS-tested ruggedness and –55 °C to +150 °C operation ensure reliability across wide ambient and transient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-RE3 | Higher RDS(on) = 5.2 mΩ @ 10 V, lower ID = 80 A, same PowerPAK SO-8 package and Gen V process. | Suitable where marginally lower current or slightly higher conduction loss is acceptable for cost optimization. | Select when thermal budget allows 0.7 mΩ higher RDS(on) and system peak current ≤ 80 A. |
| IRF3710PBF | TO-220 package, RDS(on) = 26 mΩ @ 10 V, ID = 57 A, no Qoss or UIS specification in datasheet. | Limited to lower-frequency (<100 kHz), lower-density designs due to larger footprint and higher conduction loss. | Choose only for legacy through-hole designs or where leaded package is mandated; not recommended for new high-efficiency layouts. |
Compared with SiR626DP-T1-RE3, SIR512DP-T1-RE3 delivers 15% lower RDS(on) and 25% higher current rating in identical footprint; versus IRF3710PBF, it offers 83% lower RDS(on), 75% higher current, and superior switching performance in a surface-mount, thermally enhanced package-enabling smaller, cooler, and more efficient power stages.
Availability
SIR512DP-T1-RE3 is available at Aetrix Electronics and suitable for high-current DC/DC converters, OR-ing power systems, and battery management applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIR512DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIR512DP-T1-RE3 belongs to Vishay's TrenchFET Gen V PowerPAK SO-8 family, engineered for high-efficiency, high-density power conversion in data center, telecom, and industrial systems where low RDS(on) × Qoss and rugged avalanche performance are critical.
FAQ
What is the maximum continuous drain current rating for SIR512DP-T1-RE3 at 70 °C case temperature?
The SIR512DP-T1-RE3 supports 80.7 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained operation and must be validated against actual board layout, copper area, and airflow in the end application. The SIR512DP-T1-RE3 datasheet specifies this limit with test condition notes confirming measurement on a 1" × 1" FR4 board.
Does SIR512DP-T1-RE3 require a gate driver with negative turn-off capability?
No, the SIR512DP-T1-RE3 does not require negative gate turn-off. Its gate threshold voltage (2–4 V) and low gate charge (30.5 nC typ. at 7.5 V) allow reliable switching with standard 0–5 V or 0–12 V gate drivers. The SIR512DP-T1-RE3 exhibits no shoot-through risk under typical gate drive conditions due to its well-controlled Qgs/Qgd ratio and absence of significant Miller plateau instability.
Is SIR512DP-T1-RE3 suitable for use in automotive applications?
The SIR512DP-T1-RE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical or engine-bay applications. It is rated for –55 °C to +150 °C operating junction temperature and used in industrial, telecom, and computing power supplies. For automotive-grade alternatives, consult Vishay's AQ-series MOSFETs; the SIR512DP-T1-RE3 remains appropriate for non-automotive battery management and OR-ing systems.
What is the thermal resistance from junction to ambient (RthJA) for SIR512DP-T1-RE3 under standard mounting conditions?
Under standard surface-mount conditions on a 1" × 1" FR4 board, the SIR512DP-T1-RE3 has a typical RthJA of 16 °C/W and maximum of 21 °C/W (t ≤ 10 s). This value assumes no additional heatsinking; adding thermal vias or copper pour can reduce effective RthJA significantly. The SIR512DP-T1-RE3 datasheet confirms these values in the Thermal Resistance Ratings table with note b referencing the test board configuration.
How is the body diode performance of SIR512DP-T1-RE3 characterized for synchronous rectification?
The SIR512DP-T1-RE3 body diode is fully characterized with trr = 52 ns (typ.), Qrr = 69 nC (typ.), and VSD = 0.75–1.1 V at IS = 5 A. These parameters enable efficient synchronous rectification in forward and flyback converters, especially when paired with adaptive gate timing. The SIR512DP-T1-RE3 datasheet provides detailed diode recovery waveforms and charge plots in Typical Characteristics section.
SIR512DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 25.1A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3400 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6W (Ta), 96.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR512DP-T1-RE3 FAQ
1.How can I place an order for SIR512DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR512DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR512DP-T1-RE3 reliable?
The price and inventory of SIR512DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR512DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR512DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR512DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR512DP-T1-RE3?
SIR512DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR512DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR512DP-T1-RE3?
For technical support, including SIR512DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR512DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR512DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR512DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR512DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR512DP-T1-RE3?
All SIR512DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR512DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR512DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR512DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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