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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR514DP-T1-BE3

Name: SIR514DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR514DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR514DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR514DP-T1-BE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET 150

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Product details

Overview

SIR514DP-T1-BE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.0058 Ω at V_GS = 10 V, Q_g = 23 nC (typ.), and 84.8 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR514DP-T1-BE3 datasheet, SIR514DP-T1-BE3 pinout, SIR514DP-T1-BE3 application, or SIR514DP-T1-BE3 equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 1.2 °C/W typ.), body diode characteristics (V_SD = 0.76 V typ. at I_S = 5 A), avalanche rating (E_AS = 61.25 mJ), and layout-critical package dimensions for PowerPAK SO-8 leadless mounting.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon architecture, tuned specifically for low R_DS(on) × Q_oss figure-of-merit to minimize switching losses in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2–4 V) supports standard 5 V and 10 V gate drive, while the 1.2 °C/W typical junction-to-case thermal resistance enables high-power density designs with minimal heatsinking.

The device integrates a robust intrinsic body diode with t_rr = 46 ns (typ.) and Q_rr = 56 nC (typ.), enabling efficient reverse recovery in OR-ing and synchronous rectifier configurations. It is 100 % R_g and UIS tested, with absolute maximum V_GS = ±20 V and guaranteed avalanche energy rating of 61.25 mJ under single-pulse conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - rated drain-source blocking voltage for primary-side switch operation in 48 V and 60 V bus systems
R_DS(on) max @ V_GS = 10 V	0.0058 Ω - enables <1.5 W conduction loss at 20 A, critical for high-current DC/DC output stages
Q_g typ.	23 nC - low gate charge reduces driver power requirement and improves switching efficiency at 300–1000 kHz
I_D continuous @ T_C = 25 °C	84.8 A - supports high-current power delivery without external heatsink when mounted on 1" × 1" FR4 board
R_thJC max	1.5 °C/W - ensures predictable thermal path to PCB copper or heatsink, enabling accurate junction temperature estimation
V_SD typ. @ I_S = 5 A	0.76 V - low forward voltage minimizes conduction loss in bidirectional OR-ing and hot-swap applications
E_AS	61.25 mJ - validated single-pulse avalanche energy supports reliable operation during transient overvoltage events

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); thermal pad area ≈ 3.76 mm × 4.90 mm per manufacturer drawing 71655.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals + large bottom thermal pad provide low-inductance, low-resistance power path and thermal interface
G (Pin 1 top view)	Gate (G)	Single gate input located adjacent to source; requires controlled 1 Ω gate resistor to limit dv/dt-induced turn-on in high-speed layouts

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Optimized for lowest R_DS(on) × Q_oss FOM - directly reduces total switching loss in high-frequency DC/DC converters
100 % R_g and UIS tested	Ensures gate resistance consistency (0.5–1.8 Ω) and ruggedness against unclamped inductive switching stress
Exposed drain thermal pad	Enables direct thermal coupling to PCB copper pour - achieves 1.2 °C/W R_thJC without solder paste voiding mitigation
Body diode t_rr = 46 ns (typ.)	Reduces reverse recovery loss and EMI in synchronous rectifier mode, especially below 100 kHz operation
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for industrial and telecom end-equipment

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output LLC resonant converter. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 10 A load. Use Value: Achieves <0.8 V forward drop at 20 A (vs. >0.5 V for Schottky), cutting rectifier loss by >40 % at full load.	Use Scenario: High-side primary switch in 600 W telecom DC/DC brick operating at 300 kHz. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by gate transformer, handling 80 V bus transients. Use Value: 23 nC Q_g and 1.2 °C/W R_thJC enable <1.2 W switching loss and <95 °C junction temp at 84.8 A peak.
OR-ing and Hot Swap	Battery Management System
Use Scenario: Dual-input OR-ing controller for redundant 24 V power supplies in industrial PLC backplane. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with fast fault isolation. Use Value: 0.0058 Ω R_DS(on) limits voltage drop to <120 mV at 20 A, minimizing bus imbalance and thermal rise.	Use Scenario: Charge/discharge path switch in 4-cell Li-ion battery pack with 16.8 V max pack voltage. IC Role / Device Role / Timing Role: High-current protection switch placed between battery cell stack and system load/charger. Use Value: 100 V V_DS rating provides 2× margin over 16.8 V pack; 61.25 mJ E_AS withstands short-circuit energy during fuseless protection.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output LLC resonant converter.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 10 A load.

Use Value: Achieves <0.8 V forward drop at 20 A (vs. >0.5 V for Schottky), cutting rectifier loss by >40 % at full load.

Use Scenario: High-side primary switch in 600 W telecom DC/DC brick operating at 300 kHz.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by gate transformer, handling 80 V bus transients.

Use Value: 23 nC Q_g and 1.2 °C/W R_thJC enable <1.2 W switching loss and <95 °C junction temp at 84.8 A peak.

OR-ing and Hot Swap

Battery Management System

Use Scenario: Dual-input OR-ing controller for redundant 24 V power supplies in industrial PLC backplane.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with fast fault isolation.

Use Value: 0.0058 Ω R_DS(on) limits voltage drop to <120 mV at 20 A, minimizing bus imbalance and thermal rise.

Use Scenario: Charge/discharge path switch in 4-cell Li-ion battery pack with 16.8 V max pack voltage.

IC Role / Device Role / Timing Role: High-current protection switch placed between battery cell stack and system load/charger.

Use Value: 100 V V_DS rating provides 2× margin over 16.8 V pack; 61.25 mJ E_AS withstands short-circuit energy during fuseless protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V; TO-220 package; 33 A I_D; no Q_g or E_AS spec provided in datasheet	Higher conduction loss, larger footprint, no avalanche rating - unsuitable for high-density or high-reliability DC/DC	Select only for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical linear regulator or motor gate drive
SiR626DP	Same PowerPAK SO-8 package; 100 V; R_DS(on) = 0.0032 Ω @ 10 V; Q_g = 31 nC; higher current (100 A)	Lower R_DS(on) but higher Q_g - better for ultra-low conduction loss, worse for high-frequency switching efficiency	Prefer for <50 kHz applications where conduction loss dominates; avoid if gate drive capability is limited or f_SW > 500 kHz

Compared with IRF540NPBF, SIR514DP-T1-BE3 delivers 7.5× lower R_DS(on), 10× higher current rating, and certified avalanche capability - making it viable for modern high-efficiency SMPS. Against SiR626DP, it trades 40 % higher R_DS(on) for 26 % lower Q_g, favoring high-frequency operation with constrained gate drive.

Availability

SIR514DP-T1-BE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, Pb-free compliance, and validated avalanche performance in industrial power systems.

Supply support for SIR514DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR514DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered for high-frequency, high-current DC/DC conversion in telecom, server, and industrial power supplies where low R_DS(on) × Q_oss is critical.

FAQ

What is the maximum continuous drain current rating for SIR514DP-T1-BE3 at case temperature of 70 °C?

The SIR514DP-T1-BE3 supports 67.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance limitations and must be validated against actual PCB copper area and airflow. The SIR514DP-T1-BE3 maintains its 0.0058 Ω R_DS(on) up to 125 °C junction temperature, ensuring stable conduction performance across the operating range.

Does SIR514DP-T1-BE3 have a specified avalanche energy rating, and how is it tested?

Yes, the SIR514DP-T1-BE3 has a single-pulse avalanche energy rating of 61.25 mJ, measured under L = 0.1 mH with I_AS = 35 A. It is 100 % UIS (unclamped inductive switching) tested per JEDEC standard JESD24-11, confirming ruggedness against transient overvoltage events in real-world power circuits. This rating is integral to the SIR514DP-T1-BE3 qualification and applies directly to the part number without derating.

What is the gate-source threshold voltage range for SIR514DP-T1-BE3, and how does it affect drive compatibility?

The SIR514DP-T1-BE3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA, enabling reliable turn-on with standard 5 V logic-level drivers and full enhancement with 10 V gate drive. Its negative temperature coefficient (−6.9 mV/°C) ensures inherent current sharing stability in paralleled configurations. This V_GS(th) behavior is confirmed in the SIR514DP-T1-BE3 datasheet Section 2, Table "Specifications".

How does the PowerPAK SO-8 package of SIR514DP-T1-BE3 differ from standard SO-8 in terms of thermal and electrical performance?

The PowerPAK SO-8 package used by SIR514DP-T1-BE3 is leadless with an exposed copper drain thermal pad on the bottom surface, unlike standard SO-8 which uses gull-wing leads. This design achieves R_thJC = 1.2 °C/W (vs. >30 °C/W for SO-8), reduces source inductance via four parallel source pins, and eliminates bond wire parasitics. These features make the SIR514DP-T1-BE3 suitable for high-current, high-frequency applications where thermal and switching performance are critical.

Is SIR514DP-T1-BE3 suitable for use in synchronous rectifier circuits with zero-voltage switching (ZVS)?

Yes, the SIR514DP-T1-BE3 is well-suited for ZVS synchronous rectification due to its low Q_gd (1.7 nC typ.), fast t_r/t_f (8–16 ns), and low C_oss (720 pF typ.), which minimize capacitive turn-on loss and improve ZVS soft-switching window. Its body diode t_rr = 46 ns (typ.) and Q_rr = 56 nC (typ.) further support clean commutation. These parameters are explicitly characterized for the SIR514DP-T1-BE3 in the "Dynamic" section of the datasheet.

SIR514DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20.8A (Ta), 84.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR514DP-T1-BE3 FAQ

1.How can I place an order for SIR514DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR514DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR514DP-T1-BE3 reliable?

The price and inventory of SIR514DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR514DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR514DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR514DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR514DP-T1-BE3?

SIR514DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR514DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR514DP-T1-BE3?

For technical support, including SIR514DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR514DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR514DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR514DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR514DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR514DP-T1-BE3?

All SIR514DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR514DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR514DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR514DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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