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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR514DP-T1-RE3

Name: SIR514DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR514DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR514DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR514DP-T1-RE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET POW

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Product details

Overview

SIR514DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0058 Ω at V_GS = 10 V, Q_g = 23 nC (typ.), and 84.8 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR514DP-T1-RE3 datasheet, SIR514DP-T1-RE3 pinout, SIR514DP-T1-RE3 application, or SIR514DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit, 100 % R_g and UIS testing, and thermal performance under high-current pulsed operation in compact surface-mount power stages.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile is tuned specifically for minimizing both R_DS(on) × Q_g (23 nC typ. at V_GS = 7.5 V) and R_DS(on) × Q_oss, enabling high-frequency operation in hard-switched topologies.

The device features a robust body diode with t_rr = 46 ns (typ.) and Q_rr = 56 nC (typ.) at I_F = 20 A, di/dt = 100 A/μs, and T_J = 25 °C, supporting efficient reverse recovery in synchronous buck and OR-ing configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and telecom power supplies up to 80 V bus transients.
R_DS(on) max @ V_GS = 10 V	0.0058 Ω - enables ≤ 50 mW conduction loss at 10 A, critical for thermally constrained 12–48 V output rails.
Q_g typ. @ V_GS = 7.5 V	23 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency (>500 kHz) PWM stages.
I_D continuous @ T_C = 25 °C	84.8 A - supports high-current single-phase power stages without paralleling, simplifying layout and reducing BOM count.
R_thJC max	1.5 °C/W - ensures junction-to-case thermal path supports >70 W steady-state dissipation with minimal heatsink interface resistance.
V_GS(th)	2–4 V - compatible with standard 5 V and 3.3 V logic-level gate drivers without level-shifting circuitry.
E_AS	61.25 mJ - withstands single-pulse avalanche energy events common in inductive load switching and hot-swap transients.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), JEDEC MO-229 compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Exposed copper drain pad on bottom surface provides primary thermal path and low-inductance power return.
Gate (G)	Control terminal	Single gate pad (Pin 1 top-view reference) enables precise gate loop control; R_g = 0.5–1.8 Ω (typ./max) verified per unit.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g FOM (≤ 0.13 Ω·nC) for reduced total switching + conduction loss at 500 kHz–1 MHz.
100 % R_g and UIS tested	Ensures gate robustness against ESD and transient overvoltage, and guarantees avalanche ruggedness without screening failure.
Optimized R_DS(on) × Q_oss	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and ZVS topologies.
Low V_SD body diode	V_SD = 0.76 V (typ.) at I_S = 5 A enables low-loss reverse conduction during dead-time in synchronous rectifiers.
PowerPAK® SO-8 thermal design	Exposed drain pad achieves R_thJC = 1.2 °C/W (typ.), enabling >80 W power handling with minimal PCB copper area.

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: High-current secondary-side switch in isolated DC/DC converters (e.g., 12 V → 1.2 V VRM for server CPUs). IC Role / Device Role: Low-V_DS N-channel MOSFET replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss. Use Value: Achieves >95 % efficiency at 60 A output by cutting conduction loss by 65 % vs. 40 V Schottky, enabled by R_DS(on) = 0.0058 Ω and fast body diode recovery (t_rr = 46 ns).	Use Scenario: Main switching element in 48 V input telecom power supply (e.g., 48 V → 12 V half-bridge). IC Role / Device Role: Primary-side high-side or low-side switch operating at 200–500 kHz with 100 V V_DS rating. Use Value: Supports 84.8 A continuous current at case temperature ≤25 °C, allowing single-device implementation without paralleling and reducing gate drive complexity.
OR-ing and Hot Swap	Battery Management Systems
Use Scenario: Back-to-back MOSFET configuration in redundant 12 V power distribution units for data center racks. IC Role / Device Role: Bidirectional ideal diode controller interface with ultra-low R_DS(on) to minimize voltage drop and heat generation. Use Value: Enables <10 mV drop at 50 A (R_DS(on) × I_D), eliminating thermal derating and supporting compact fanless enclosure designs.	Use Scenario: Charge/discharge FET in 3–4 cell Li-ion battery packs (e.g., portable medical devices, power tools). IC Role / Device Role: High-current protection switch placed between battery pack and system load or charger IC. Use Value: Withstands 35 A single-pulse avalanche current (I_AS) and 61.25 mJ energy (E_AS), protecting against short-circuit and inrush transients without external TVS.

Synchronous Rectification

Primary-Side Switching

Use Scenario: High-current secondary-side switch in isolated DC/DC converters (e.g., 12 V → 1.2 V VRM for server CPUs).

IC Role / Device Role: Low-V_DS N-channel MOSFET replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss.

Use Value: Achieves >95 % efficiency at 60 A output by cutting conduction loss by 65 % vs. 40 V Schottky, enabled by R_DS(on) = 0.0058 Ω and fast body diode recovery (t_rr = 46 ns).

Use Scenario: Main switching element in 48 V input telecom power supply (e.g., 48 V → 12 V half-bridge).

IC Role / Device Role: Primary-side high-side or low-side switch operating at 200–500 kHz with 100 V V_DS rating.

Use Value: Supports 84.8 A continuous current at case temperature ≤25 °C, allowing single-device implementation without paralleling and reducing gate drive complexity.

OR-ing and Hot Swap

Battery Management Systems

Use Scenario: Back-to-back MOSFET configuration in redundant 12 V power distribution units for data center racks.

IC Role / Device Role: Bidirectional ideal diode controller interface with ultra-low R_DS(on) to minimize voltage drop and heat generation.

Use Value: Enables <10 mV drop at 50 A (R_DS(on) × I_D), eliminating thermal derating and supporting compact fanless enclosure designs.

Use Scenario: Charge/discharge FET in 3–4 cell Li-ion battery packs (e.g., portable medical devices, power tools).

IC Role / Device Role: High-current protection switch placed between battery pack and system load or charger IC.

Use Value: Withstands 35 A single-pulse avalanche current (I_AS) and 61.25 mJ energy (E_AS), protecting against short-circuit and inrush transients without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 0.044 Ω @ 10 V (7.6× higher); Q_g = 71 nC (3.1× higher); TO-220 package.	Higher conduction and switching loss limits usable frequency to <100 kHz; requires heatsink due to R_thJA = 62 °C/W.	Select only when cost sensitivity outweighs efficiency and board space constraints; not suitable for high-density DC/DC modules.
SUP60090-07	R_DS(on) = 0.0065 Ω @ 10 V (12 % higher); Q_g = 27 nC (17 % higher); same PowerPAK SO-8 footprint.	Nearly identical thermal and electrical behavior; slightly lower avalanche rating (E_AS = 52 mJ vs. 61.25 mJ).	Drop-in alternative where Vishay supply continuity is required; verify E_AS margin in high-energy fault scenarios.

Compared with IRF540NPBF, SIR514DP-T1-RE3 delivers 7.6× lower R_DS(on) and 3.1× lower Q_g, enabling >15 % efficiency gain and 4× higher switching frequency capability; versus SUP60090-07, it offers superior avalanche ruggedness and marginally better FOM for demanding primary-side and synchronous rectifier roles.

Availability

SIR514DP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, synchronous rectification circuits, and battery protection systems requiring stable component supply across industrial, telecom, and computing end markets.

Supply support for SIR514DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR514DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET product line, engineered for ultra-low FOM in high-frequency, high-current power conversion stages used in servers, telecom infrastructure, and battery-powered equipment.

FAQ

What is the maximum continuous drain current rating for SIR514DP-T1-RE3 at 70 °C case temperature?

The SIR514DP-T1-RE3 supports 67.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package and must be validated against actual PCB copper area, airflow, and ambient conditions. The SIR514DP-T1-RE3 datasheet confirms this value under steady-state conditions with no additional heatsinking.

Does SIR514DP-T1-RE3 require a gate resistor for safe operation in hard-switched applications?

Yes - while the SIR514DP-T1-RE3 has a typical gate resistance (R_g) of 1.05 Ω, an external gate resistor is required to control dV/dt and prevent oscillation during switching. The recommended value depends on driver strength and layout; typical values range from 2.2 Ω to 10 Ω. The SIR514DP-T1-RE3 gate charge (Q_g = 23 nC typ. at 7.5 V) determines optimal R_g for target rise/fall times.

Can SIR514DP-T1-RE3 be used in avalanche mode for circuit protection?

Yes - the SIR514DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 61.25 mJ at I_AS = 35 A and L = 0.1 mH. This makes the SIR514DP-T1-RE3 suitable for limited-energy fault clamping in motor drives and hot-swap circuits, but repetitive avalanche operation is not guaranteed and must be avoided per Vishay's reliability guidelines.

What is the thermal resistance from junction to ambient for SIR514DP-T1-RE3 on a 1" × 1" FR4 board?

Per the datasheet note b, the SIR514DP-T1-RE3 exhibits R_thJA = 20 °C/W (typical) and 25 °C/W (maximum) when mounted on a 1" × 1" FR4 board with standard 2 oz copper. This value assumes no additional heatsinking and defines the upper bound of power dissipation before exceeding T_J(max) = 150 °C at T_A = 25 °C.

Is SIR514DP-T1-RE3 lead-free and RoHS-compliant?

Yes - the SIR514DP-T1-RE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section and Material Categorization note. It complies with RoHS Directive 2011/65/EU and Vishay's green initiative standards (document #99912). The "-RE3" suffix explicitly denotes RoHS-compliant, lead-free packaging.

SIR514DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20.8A (Ta), 84.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR514DP-T1-RE3 FAQ

1.How can I place an order for SIR514DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR514DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR514DP-T1-RE3 reliable?

The price and inventory of SIR514DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR514DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR514DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR514DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR514DP-T1-RE3?

SIR514DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR514DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR514DP-T1-RE3?

For technical support, including SIR514DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR514DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR514DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR514DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR514DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR514DP-T1-RE3?

All SIR514DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR514DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR514DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR514DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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