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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR516DP-T1-RE3

Name: SIR516DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR516DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR516DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR516DP-T1-RE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET POW

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Product details

Overview

SIR516DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.008 Ω at V_GS = 10 V, Q_g = 17.7 nC (typ.), and continuous drain current I_D = 63.7 A at T_C = 25 °C. It is optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR516DP-T1-RE3 datasheet, SIR516DP-T1-RE3 pinout, SIR516DP-T1-RE3 application, or SIR516DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit, 100 % R_g and UIS testing, and suitability for thermally constrained hot-swap and OR-ing designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V process to achieve ultra-low conduction and switching losses. Its gate charge profile is tuned for minimal R_DS(on) × Q_oss, supporting high-frequency operation in hard-switched topologies.

The device features a robust body diode with t_rr = 42 ns (typ.) and Q_rr = 45 nC (typ.) at T_J = 25 °C, enabling efficient reverse recovery in synchronous rectifier configurations. Thermal resistance R_thJC is 1.4 °C/W (typ.), confirming high-power capability when mounted on heatsinked PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V input bus designs with 2× safety margin.
R_DS(on) @ V_GS = 10 V	0.008 Ω max - Enables <1 W conduction loss at 35 A, critical for high-current power stages.
Q_g typ.	17.7 nC - Low gate charge reduces drive power and enables use with standard gate drivers (e.g., UCC27531).
I_D (T_C = 25 °C)	63.7 A - Continuous current rating under ideal heatsinking; defines maximum steady-state output capability.
R_thJC max.	1.75 °C/W - Confirms thermal path efficiency; allows ~70 W dissipation before reaching 150 °C junction limit.
V_GS(th)	2–4 V - Gate threshold compatible with 3.3 V and 5 V logic-level control without level-shifting.
E_AS	45 mJ - Avalanche energy rating supports robustness against inductive switching transients in motor drives.

Pinout & Package

Package: PowerPAK® SO-8 (leadless), 5.15 mm × 6.15 mm footprint, exposed drain paddle on bottom side for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Single gate input; low R_g = 0.95 Ω (max) minimizes gate oscillation risk during fast switching.
6, 7, 8	Drain (D)	Three drain terminals connected to exposed copper paddle - primary thermal and current path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.14 Ω·nC, reducing total switching + conduction loss in 500 kHz–1 MHz converters.
100 % R_g and UIS tested	Ensures gate resistance consistency and single-pulse avalanche ruggedness - eliminates field failures in unclamped inductive loads.
Optimized R_DS(on) × Q_oss	Minimizes capacitive turn-on loss and improves light-load efficiency in resonant and ZVS topologies.
PowerPAK SO-8 leadless construction	Reduces parasitic inductance by >30 % vs. standard SO-8; enables cleaner switching waveforms and lower EMI.
Body diode t_rr = 42 ns (typ.)	Supports reliable synchronous rectification in LLC and phase-shifted full-bridge converters without external Schottky assist.

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, high-efficiency 12 V → 0.8 V point-of-load conversion in AI accelerator servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 600–800 kHz with precise dead-time control. Use Value: 0.008 Ω R_DS(on) limits conduction loss to <0.5 W per phase at 40 A, enabling >95 % peak efficiency.	Use Scenario: 48 V input isolated DC/DC module for programmable logic controllers and industrial HMIs. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology; operates at 200–300 kHz. Use Value: 45 mJ E_AS withstands transformer leakage energy spikes; low Q_g eases gate driver thermal design.
Hot-Swap Controller Interface	Battery Protection Circuit
Use Scenario: OR-ing and inrush limiting in redundant 24 V/48 V telecom power shelves. IC Role / Device Role / Timing Role: Back-to-back configured load switch controlling power path entry with controlled slew rate. Use Value: Low V_GS(th) (2–4 V) enables direct control from hot-swap controller reference voltage; 63.7 A rating supports 100 A system redundancy.	Use Scenario: Cell-balancing and discharge path switch in 16-cell Li-ion battery packs for energy storage systems. IC Role / Device Role / Timing Role: High-side protection switch interrupting fault current within <10 μs during overcurrent events. Use Value: 100 % UIS tested ensures survivability during short-circuit interruption; R_DS(on) stability over -55 to +150 °C maintains accuracy across ambient extremes.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-efficiency 12 V → 0.8 V point-of-load conversion in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 600–800 kHz with precise dead-time control.

Use Value: 0.008 Ω R_DS(on) limits conduction loss to <0.5 W per phase at 40 A, enabling >95 % peak efficiency.

Use Scenario: 48 V input isolated DC/DC module for programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology; operates at 200–300 kHz.

Use Value: 45 mJ E_AS withstands transformer leakage energy spikes; low Q_g eases gate driver thermal design.

Hot-Swap Controller Interface

Battery Protection Circuit

Use Scenario: OR-ing and inrush limiting in redundant 24 V/48 V telecom power shelves.

IC Role / Device Role / Timing Role: Back-to-back configured load switch controlling power path entry with controlled slew rate.

Use Value: Low V_GS(th) (2–4 V) enables direct control from hot-swap controller reference voltage; 63.7 A rating supports 100 A system redundancy.

Use Scenario: Cell-balancing and discharge path switch in 16-cell Li-ion battery packs for energy storage systems.

IC Role / Device Role / Timing Role: High-side protection switch interrupting fault current within <10 μs during overcurrent events.

Use Value: 100 % UIS tested ensures survivability during short-circuit interruption; R_DS(on) stability over -55 to +150 °C maintains accuracy across ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.0055 Ω @ 10 V (lower), Q_g = 27 nC (higher), same PowerPAK SO-8 package	Better conduction loss but higher switching loss; suited for <300 kHz, high-current, low-frequency applications	Select SiR626DP-T1-RE3 only if thermal budget favors lower R_DS(on) over gate drive capability.
IRF3710PBF	TO-220 package, R_DS(on) = 0.056 Ω @ 10 V, Q_g = 123 nC, no UIS rating	Requires heatsink; unsuitable for high-density or high-frequency layouts due to larger size and higher losses	IRF3710PBF is viable only in legacy through-hole designs where board space and frequency are not constraints.

Compared with SiR626DP-T1-RE3, SIR516DP-T1-RE3 trades 31 % higher R_DS(on) for 35 % lower Q_g, making it superior for 500+ kHz switching; versus IRF3710PBF, it delivers 86 % lower conduction loss and 78 % lower gate charge in a surface-mount, thermally enhanced package.

Availability

SIR516DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and hot-swap power distribution requiring stable component supply, Pb-free compliance, and volume traceability.

Supply support for SIR516DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIR516DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SIR516DP-T1-RE3 at 70 °C case temperature?

The SIR516DP-T1-RE3 supports 51 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under real-world heatsinking conditions. The value is measured under standardized test conditions (surface-mounted on 1" × 1" FR4 board) and must be validated in the target PCB layout for final design.

Does SIR516DP-T1-RE3 have a specified avalanche energy rating?

Yes, the SIR516DP-T1-RE3 has a single-pulse avalanche energy rating (E_AS) of 45 mJ, tested per JEDEC standards with L = 0.1 mH. This rating confirms ruggedness against unclamped inductive switching events - a critical parameter for motor drive and flyback converter primary-side applications where SIR516DP-T1-RE3 is commonly deployed.

Is SIR516DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIR516DP-T1-RE3 is well-suited for synchronous rectification in LLC converters due to its low Q_oss (54 pF typ.), fast body diode recovery (t_rr = 42 ns typ.), and low R_DS(on). These characteristics minimize reverse recovery loss and conduction loss during the resonant half-cycle, directly improving light-load and full-load efficiency in 200–1000 kHz operating ranges.

What is the gate-source threshold voltage range for SIR516DP-T1-RE3?

The gate-source threshold voltage (V_GS(th)) for SIR516DP-T1-RE3 is specified as 2–4 V at I_D = 250 μA and T_J = 25 °C. This range ensures compatibility with both 3.3 V and 5 V gate drivers without requiring external level shifting, and remains stable across temperature due to its negative temperature coefficient (−6.9 mV/°C).

How does the PowerPAK SO-8 package of SIR516DP-T1-RE3 improve thermal performance compared to standard SO-8?

The PowerPAK SO-8 package of SIR516DP-T1-RE3 uses an exposed copper drain paddle on the bottom side, reducing R_thJC to 1.4 °C/W (typ.) - over 5× better than standard SO-8. This enables direct thermal coupling to the PCB ground plane, significantly lowering junction temperature rise under high-current operation and supporting higher power density in compact layouts.

SIR516DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16.8A (Ta), 63.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 71.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR516DP-T1-RE3 FAQ

1.How can I place an order for SIR516DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR516DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR516DP-T1-RE3 reliable?

The price and inventory of SIR516DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR516DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR516DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR516DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR516DP-T1-RE3?

SIR516DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR516DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR516DP-T1-RE3?

For technical support, including SIR516DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR516DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR516DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR516DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR516DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR516DP-T1-RE3?

All SIR516DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR516DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR516DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR516DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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