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Vishay Siliconix SIR5208DP-T1-RE3
- Part No.:
- SIR5208DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR5208DP-T1-RE3.pdf
- Description:
- N-CHANNEL 20 V (D-S) MOSFET 150C
- Quantity:
- Payment:
- Shipping:
Inventory:4,366
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Product details
Overview
SIR5208DP-T1-RE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, rated for 165 A continuous drain current at TC = 25 °C, with RDS(on) of 1.08 mΩ at VGS = 8 V and 1.14 mΩ at VGS = 4.5 V, optimized for high-efficiency battery management and load switching in compact DC systems.
For engineers reviewing the SIR5208DP-T1-RE3 datasheet, SIR5208DP-T1-RE3 pinout, SIR5208DP-T1-RE3 application, or SIR5208DP-T1-RE3 equivalent, this device delivers ultra-low on-resistance, 100% Rg and UIS tested reliability, and thermal performance validated to 150 °C junction temperature - critical for high-current, space-constrained power stages.
Technical Context
This MOSFET employs trench-based silicon architecture enabling sub-1.5 mΩ RDS(on) at 4.5 V gate drive, supporting direct logic-level control from 3.3 V/5 V microcontrollers without gate drivers. Its low Qg (24.6 nC typ. at 4.5 V) ensures fast switching with minimal drive loss.
The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with RthJC = 1.8 °C/W (typ.) and RthJA = 21 °C/W (typ., t ≤ 10 s), enabling high-power density operation on standard FR4 PCBs without external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage suitable for 12 V and 19 V battery systems. |
| RDS(on) max @ VGS = 4.5 V | 1.4 mΩ - Enables <1 W conduction loss at 60 A, critical for thermally constrained battery protection circuits. |
| ID continuous @ TC = 25 °C | 165 A - Supports high-current load switching without parallel devices in server VRMs or e-mobility modules. |
| Qg typ. @ VGS = 4.5 V | 24.6 nC - Reduces gate drive power and enables efficient PWM operation up to 500 kHz in synchronous buck converters. |
| VGS(th) | 0.4–1.3 V - Ensures reliable turn-on with 2.5 V-rated logic, compatible with low-voltage I/O domains in portable electronics. |
| RthJC (max) | 2.2 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink, simplifying thermal design for >50 W dissipation. |
| Body diode VSD | 0.66 V (typ.) - Low forward drop reduces reverse recovery losses during synchronous rectification or freewheeling. |
Pinout & Package
PowerPAK® SO-8 single-package with bottom-side exposed drain terminals. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H). Lead (Pb)-free and halogen-free construction per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface - primary thermal path and high-current return path; requires full-solder coverage. |
| G (Gate) | Control input | Single gate terminal (Pin 1 top-side marking); low Rg (0.4–1.6 Ω) minimizes gate ringing and EMI in fast-switching layouts. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables 1.08 mΩ RDS(on) at 8 V and 1.14 mΩ at 4.5 V - highest conductivity per mm² among 20 V SO-8 MOSFETs. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy handling (EAS = 61.25 mJ). |
| Low Qgd/Qgs ratio | Qgd = 2.0 nC / Qgs = 8.8 nC → 0.23 - improves hard-switching immunity and reduces Miller-induced shoot-through risk. |
| Enhanced body diode recovery | trr = 39 ns (typ.), Qrr = 34 nC - lowers switching loss and EMI in bidirectional power flow applications like USB PD sinks. |
| Thermally optimized PowerPAK® | Bottom-side drain pad achieves 1.8 °C/W RthJC, enabling >50 W continuous dissipation on 1" × 1" 2-oz Cu FR4 board. |
Applications
| Battery Protection Circuit | High-Current Load Switch |
|---|---|
|
Use Scenario: Overcurrent and short-circuit protection in 12 V Li-ion battery packs for power tools and medical portables. IC Role / Device Role: Primary high-side switch controlling main battery discharge path; monitors current via sense resistor and disables on fault. Use Value: 1.14 mΩ RDS(on) at 4.5 V allows direct MCU GPIO control while limiting voltage drop to <70 mV at 60 A - preserving pack runtime and thermal margin. |
Use Scenario: Hot-swap and inrush control for 12 V/48 V industrial backplanes and server mid-boards. IC Role / Device Role: Low-loss, high-reliability load switch placed between input supply and downstream power rails. Use Value: 165 A rating and 61.25 mJ EAS withstand capability enable safe interruption of 100 A faults without failure - eliminating need for fuses or circuit breakers. |
| DC-DC Synchronous Rectifier | Motor Drive Half-Bridge |
|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V output buck-boost converters for telecom power supplies. IC Role / Device Role: Low-VDS N-channel switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 10 A. Use Value: 0.66 V body diode VSD and 39 ns trr minimize reverse recovery loss, achieving >97% efficiency at 20 A output with 500 kHz switching. |
Use Scenario: High-side switch in 24 V BLDC motor gate driver stages for robotics and automated guided vehicles. IC Role / Device Role: Fast-switching, low-RDS(on) power stage element in half-bridge configuration driving motor phase windings. Use Value: 24.6 nC Qg at 4.5 V enables clean 100 ns turn-on with standard 1 A gate drivers, reducing dead-time loss and torque ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR520ADP-T1-RE3 | RDS(on) = 1.25 mΩ @ 4.5 V (higher by 0.11 mΩ); same PowerPAK SO-8 package and pinout. | Marginally higher conduction loss limits use in >80 A continuous applications where thermal headroom is tight. | Select when cost sensitivity outweighs 5–7% higher I²R loss at full load; identical layout and drive requirements. |
| IRLHS6242TRPBF | RDS(on) = 1.35 mΩ @ 4.5 V; SO-8 package but with standard leaded footprint (not PowerPAK), RthJA = 50 °C/W (vs. 21 °C/W). | Higher thermal resistance restricts continuous current to ~30 A on standard PCB - unsuitable for high-power battery switches. | Choose only for legacy SO-8 layouts requiring leaded compatibility; avoid where thermal performance or >40 A current is required. |
Compared with SiR520ADP-T1-RE3, SIR5208DP-T1-RE3 offers lower RDS(on) and better thermal performance; versus IRLHS6242TRPBF, it delivers 2.3× lower RthJA and 2.5× higher current rating - making it the preferred choice for thermally demanding, high-density power designs.
Availability
SIR5208DP-T1-RE3 is available at Aetrix Electronics and suitable for battery management systems, high-current load switching, synchronous rectification, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIR5208DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR5208DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for ultra-low RDS(on) and high-current density in space-constrained battery-powered and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIR5208DP-T1-RE3 at 70 °C case temperature?
The SIR5208DP-T1-RE3 supports 132 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction and assumes proper PCB copper area and airflow. At ambient conditions, the device is rated for 38.4 A at TA = 70 °C with standard mounting on 1" × 1" FR4 board.
Does SIR5208DP-T1-RE3 support 3.3 V logic-level gate drive?
Yes, SIR5208DP-T1-RE3 is fully characterized down to VGS = 2.5 V, with RDS(on) = 2.65 mΩ (max) at that voltage. Its VGS(th) range of 0.4–1.3 V ensures robust turn-on with 3.3 V microcontroller outputs, and its low Qg (24.6 nC typ. at 4.5 V) minimizes gate drive burden - making SIR5208DP-T1-RE3 suitable for direct logic-level control without level-shifting.
What is the thermal resistance from junction to case (RthJC) for SIR5208DP-T1-RE3?
The SIR5208DP-T1-RE3 has a typical junction-to-case thermal resistance (RthJC) of 1.8 °C/W and a maximum of 2.2 °C/W, measured from junction to the exposed drain pad on the bottom of the PowerPAK® SO-8 package. This low value enables efficient heat transfer to PCB copper or external heatsinks, supporting >50 W continuous power dissipation in well-designed layouts.
Is SIR5208DP-T1-RE3 qualified for automotive applications?
No, SIR5208DP-T1-RE3 is not AEC-Q101 qualified. It is designed for industrial, computing, and consumer power applications. For automotive-grade equivalents, Vishay offers the SQ-series (e.g., SQJQ480E) with full AEC-Q101 qualification, extended temperature range, and enhanced robustness testing - SIR5208DP-T1-RE3 should not be used in safety-critical or automotive environments without additional validation.
What does "100 % Rg and UIS tested" mean for SIR5208DP-T1-RE3?
"100 % Rg and UIS tested" means every unit of SIR5208DP-T1-RE3 undergoes production screening for gate resistance (Rg = 0.4–1.6 Ω) and unclamped inductive switching (UIS) stress, verifying ability to absorb 61.25 mJ single-pulse avalanche energy without degradation. This ensures consistent gate drive behavior and ruggedness against inductive turn-off transients - critical for reliability in motor drives and hot-swap circuits using SIR5208DP-T1-RE3.
SIR5208DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Ta), 165A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 8V
- Rds On (Max) @ Id, Vgs:
- 1.3mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- +8V, -7V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4100 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR5208DP-T1-RE3 FAQ
1.How can I place an order for SIR5208DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR5208DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR5208DP-T1-RE3 reliable?
The price and inventory of SIR5208DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5208DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR5208DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5208DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR5208DP-T1-RE3?
SIR5208DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR5208DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR5208DP-T1-RE3?
For technical support, including SIR5208DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5208DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR5208DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR5208DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5208DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR5208DP-T1-RE3?
All SIR5208DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5208DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR5208DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR5208DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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