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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5211DP-T1-GE3

Name: SIR5211DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR5211DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR5211DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5211DP-T1-GE3.pdf

Description:: P-CHANNEL 20 V (D-S) MOSFET POWE

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Product details

Overview

SIR5211DP-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SO-8 package, rated for -20 V drain-source voltage, 0.0032 Ω R_DS(on) at V_GS = -10 V, and -105 A continuous drain current at T_C = 25 °C. It serves as a high-current load switch in battery-powered systems requiring low conduction loss and fast switching.

For engineers reviewing the SIR5211DP-T1-GE3 datasheet, SIR5211DP-T1-GE3 pinout, SIR5211DP-T1-GE3 application, or SIR5211DP-T1-GE3 equivalent, this device is selected for high-efficiency power path control where low gate charge (48 nC at V_GS = -4.5 V), robust avalanche rating (15 A I_AS, 11.25 mJ E_AS), and thermal performance (R_thJC = 1.8 °C/W) are critical.

Technical Context

This MOSFET uses Vishay's TrenchFET® Gen V process to achieve ultra-low on-resistance with tight parametric distribution. Its gate threshold voltage range of -0.5 V to -1.5 V enables reliable turn-on with standard logic-level drive down to -4.5 V, while its 100 % R_g and UIS testing ensures production robustness.

The device integrates a body diode with 22 ns typical reverse recovery time and 12 nC Q_rr, supporting synchronous rectification and bidirectional current handling in motor drive and battery protection circuits. Its PowerPAK SO-8 leadless package delivers superior thermal and electrical performance versus traditional SO-8, with exposed drain pads on the bottom side for direct PCB heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage battery systems (e.g., 12 V nominal, 16 V max automotive or industrial rails).
R_DS(on) @ V_GS = -10 V	0.0032 Ω - Enables <1 W conduction loss at 50 A, critical for high-current load switching efficiency.
Q_g @ V_GS = -4.5 V	48 nC - Supports efficient PWM operation up to ~1 MHz with moderate gate driver strength (e.g., 1 A peak).
I_D (continuous, T_C = 25 °C)	-105 A - Rated for high-power DC load switching without external heatsink when mounted on ≥1" × 1" FR4 board.
R_thJC	1.8 °C/W - Allows direct thermal coupling to copper planes or heatsinks, enabling >50 W steady-state dissipation in optimized layouts.
E_AS	11.25 mJ - Withstands single-pulse inductive energy in motor drive or hot-swap applications without failure.
V_GS(th)	-0.5 to -1.5 V - Ensures guaranteed turn-on with common -5 V or -4.5 V logic drivers, reducing need for level-shifting circuitry.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pads on bottom side; dimensions: 6.15 mm × 5.15 mm × 1.04 mm). Compliant with JEDEC MO-229 variation WAAB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input; low 2.5 Ω max gate resistance minimizes ringing and simplifies driver design.
6, 7, 8	Drain (D)	Three exposed drain terminals on bottom side provide low-inductance, high-current return path and primary thermal interface.

Key Features

Feature	Design Value
TrenchFET® Gen V technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency, high-current switching efficiency.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
PowerPAK SO-8 package	Reduces thermal resistance by >50 % vs. standard SO-8; eliminates leadframe inductance for cleaner switching waveforms.
Low V_GS(th) distribution	Narrow -0.5 V to -1.5 V range guarantees consistent turn-on across temperature and production lots without gate bias tuning.
Body diode with fast t_rr	22 ns typical reverse recovery time supports synchronous rectification and reduces commutation losses in H-bridge topologies.

Applications

Battery Protection Circuit	High-Current Load Switch
Use Scenario: Reverse polarity and overcurrent protection in 12 V/24 V portable power tools and medical battery packs. IC Role / Device Role / Timing Role: Main high-side P-channel switch controlling power path between battery and system load. Use Value: 0.004 Ω R_DS(on) at -4.5 V enables <1.5 W loss at 60 A, extending runtime and reducing thermal management complexity.	Use Scenario: Hot-swap and inrush control for server backplanes and telecom line cards. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or fuses in 20 V DC distribution networks. Use Value: 158 nC max total gate charge allows controlled soft-start via RC gate drive, limiting inrush to <100 A peak.
Motor Drive Half-Bridge	USB-C Power Delivery Switch
Use Scenario: Low-side switch in brushed DC motor drivers for industrial actuators and robotics. IC Role / Device Role / Timing Role: High-current, low-loss switching element in H-bridge configuration with integrated body diode freewheeling. Use Value: 22 ns t_rr and 12 nC Q_rr minimize switching loss and voltage overshoot during commutation at 20 kHz PWM.	Use Scenario: VBUS path switch in USB-C PD 3.0 compliant chargers and adapters supporting 20 V/5 A delivery. IC Role / Device Role / Timing Role: Bidirectional power path controller enabling sink/source capability in dual-role ports. Use Value: -20 V V_DS rating and -105 A I_D support full 100 W operation with margin; 1.8 °C/W R_thJC sustains continuous 5 A at ambient ≤60 °C.

Battery Protection Circuit

High-Current Load Switch

Use Scenario: Reverse polarity and overcurrent protection in 12 V/24 V portable power tools and medical battery packs.

IC Role / Device Role / Timing Role: Main high-side P-channel switch controlling power path between battery and system load.

Use Value: 0.004 Ω R_DS(on) at -4.5 V enables <1.5 W loss at 60 A, extending runtime and reducing thermal management complexity.

Use Scenario: Hot-swap and inrush control for server backplanes and telecom line cards.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or fuses in 20 V DC distribution networks.

Use Value: 158 nC max total gate charge allows controlled soft-start via RC gate drive, limiting inrush to <100 A peak.

Motor Drive Half-Bridge

USB-C Power Delivery Switch

Use Scenario: Low-side switch in brushed DC motor drivers for industrial actuators and robotics.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in H-bridge configuration with integrated body diode freewheeling.

Use Value: 22 ns t_rr and 12 nC Q_rr minimize switching loss and voltage overshoot during commutation at 20 kHz PWM.

Use Scenario: VBUS path switch in USB-C PD 3.0 compliant chargers and adapters supporting 20 V/5 A delivery.

IC Role / Device Role / Timing Role: Bidirectional power path controller enabling sink/source capability in dual-role ports.

Use Value: -20 V V_DS rating and -105 A I_D support full 100 W operation with margin; 1.8 °C/W R_thJC sustains continuous 5 A at ambient ≤60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (0.02 Ω @ -10 V), TO-220 package, 74 A I_D, no UIS test.	Requires heatsink for >30 A operation; slower switching due to higher Q_g (140 nC).	Choose for legacy through-hole designs where thermal mass compensates for lower efficiency.
SiR870DP-T1-GE3	Same PowerPAK SO-8 package, -30 V V_DS, 0.0052 Ω R_DS(on) @ -10 V, 80 A I_D.	Higher voltage rating suits 24 V systems; lower current rating limits use in >80 A loads.	Choose when 30 V blocking is required and 80 A continuous current suffices.

Compared with IRF4905PbF and SiR870DP-T1-GE3, the SIR5211DP-T1-GE3 offers the lowest R_DS(on) and highest current rating in a surface-mount package, making it optimal for space-constrained, high-efficiency 20 V power rails where thermal performance and switching speed are prioritized over voltage headroom.

Availability

SIR5211DP-T1-GE3 is available at Aetrix Electronics and suitable for battery management, motor drive control, and high-current load switching requiring stable component supply and long-term industrial availability.

Supply support for SIR5211DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR5211DP-T1-GE3 belongs to Vishay's TrenchFET® Gen V PowerPAK SO-8 family, engineered for high-current, low-voltage power switching in battery-powered and industrial equipment where minimal conduction loss and robust thermal performance are essential.

FAQ

What is the maximum continuous drain current for SIR5211DP-T1-GE3 at 70 °C case temperature?

The SIR5211DP-T1-GE3 supports -84 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained high-power operation and assumes proper PCB copper area per Vishay's recommended pad layout in Application Note 826. The SIR5211DP-T1-GE3 maintains safe junction temperature below 150 °C under these conditions when mounted on ≥1" × 1" FR4 board.

Does SIR5211DP-T1-GE3 have a specified avalanche energy rating?

Yes, the SIR5211DP-T1-GE3 has a single-pulse avalanche energy rating of 11.25 mJ at T_J = 25 °C, measured with L = 0.1 mH. This value is validated per UIS test methodology and confirms the device's ability to absorb inductive energy without failure during transient events such as motor stall or relay coil de-energization. The SIR5211DP-T1-GE3 is 100 % UIS tested in production.

What is the gate threshold voltage range for SIR5211DP-T1-GE3, and how does it affect drive requirements?

The SIR5211DP-T1-GE3 has a gate-source threshold voltage (V_GS(th)) range of -0.5 V to -1.5 V at I_D = -250 μA. This low, tightly distributed threshold enables reliable turn-on using standard -4.5 V or -5 V logic-level gate drivers without requiring negative bias generation. The SIR5211DP-T1-GE3 achieves 0.004 Ω R_DS(on) at V_GS = -4.5 V, making it suitable for direct microcontroller GPIO drive in compact battery systems.

Can SIR5211DP-T1-GE3 be used in synchronous rectification applications?

Yes, the SIR5211DP-T1-GE3 is suitable for synchronous rectification due to its fast body diode characteristics: 22 ns typical reverse recovery time (t_rr) and 12 nC typical reverse recovery charge (Q_rr). These parameters minimize commutation loss and voltage spikes in buck converters and half-bridge motor drives. The SIR5211DP-T1-GE3's low R_DS(on) further reduces conduction loss compared to Schottky diodes in 20 V systems.

What is the thermal resistance from junction to case (R_thJC) for SIR5211DP-T1-GE3, and how is it measured?

The SIR5211DP-T1-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 2.2 °C/W, with typical value 1.8 °C/W, measured from the silicon die to the exposed drain paddle in the PowerPAK SO-8 package. This value is determined under steady-state conditions with the case temperature measured at the center of the drain pad. The SIR5211DP-T1-GE3 leverages its exposed drain terminals for direct thermal transfer to PCB copper, enabling high-power dissipation without external heatsinks.

SIR5211DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 158 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6700 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5211DP-T1-GE3 FAQ

1.How can I place an order for SIR5211DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5211DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5211DP-T1-GE3 reliable?

The price and inventory of SIR5211DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5211DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR5211DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5211DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5211DP-T1-GE3?

SIR5211DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5211DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5211DP-T1-GE3?

For technical support, including SIR5211DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5211DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR5211DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR5211DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5211DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR5211DP-T1-GE3?

All SIR5211DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5211DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5211DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR5211DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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