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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5623DP-T1-RE3

Name: SIR5623DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR5623DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR5623DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5623DP-T1-RE3.pdf

Description:: P-CHANNEL 60 V (D-S) MOSFET POWE

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Product details

Overview

SIR5623DP-T1-RE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in battery-powered systems, featuring -60 V V_DS, 0.024 Ω R_DS(on) at V_GS = -10 V, and 37.1 A continuous drain current at T_C = 25 °C - deployed in portable power tools, USB-C PD sink protection, and industrial backup power rails.

For engineers reviewing the SIR5623DP-T1-RE3 datasheet, SIR5623DP-T1-RE3 pinout, SIR5623DP-T1-RE3 application, or SIR5623DP-T1-RE3 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_g figure-of-merit (10.1 nC total gate charge at -4.5 V), 100 % R_g and UIS tested reliability, and PowerPAK® SO-8 leadless package thermal performance.

Technical Context

This P-channel MOSFET operates with a gate-source threshold voltage of -1.4 V to -2.6 V and delivers stable on-resistance down to 0.0375 Ω at V_GS = -4.5 V, enabling efficient operation from 4.5 V logic-level control in high-side switch configurations. Its body diode exhibits 42 ns reverse recovery time and 37 nC Q_rr, supporting synchronous rectification in bidirectional power paths.

The device uses trench MOSFET technology optimized for low conduction loss and fast switching, with C_iss = 1575 pF and C_rss = 36 pF at V_DS = -30 V. Thermal resistance is rated at R_thJC = 1.7 °C/W (typical) and R_thJA = 21 °C/W (t ≤ 10 s), confirming suitability for compact PCB layouts with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - supports 48 V nominal bus systems with 20 % derating margin
R_DS(on) max @ V_GS = -10 V	0.024 Ω - enables <1 W conduction loss at 20 A DC load current
R_DS(on) max @ V_GS = -4.5 V	0.046 Ω - ensures reliable turn-on from standard 5 V microcontroller GPIO
Q_g typ. @ V_GS = -4.5 V	10.1 nC - reduces gate drive power and enables >1 MHz PWM switching
I_D continuous @ T_C = 25 °C	-37.1 A - sustains high-current loads without external heatsink in TO-252 footprint-equivalent layout
R_thJC max	2.1 °C/W - allows direct thermal coupling to copper pour for thermal management
E_AS	20 mJ - withstands single-pulse inductive energy in motor drive flyback events

Pinout & Package

Package: PowerPAK® SO-8 (leadless, surface-mount), 6.15 mm × 5.15 mm footprint, exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source terminals reduce bond wire inductance and improve current sharing
4	Gate (G)	Single gate input with 0.4–1.0 Ω typical gate resistance - compatible with standard MOSFET drivers
6, 7, 8	Drain (D)	Three drain terminals connected to large bottom-side copper pad - primary thermal path to PCB

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	0.46 Ω·nC at -4.5 V - minimizes combined conduction and switching losses in portable power switches
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling per JEDEC JESD22-A115 - no screening failures in production
PowerPAK® SO-8 package	Thermal resistance 3× lower than SO-8 with leads - enables higher power density without thermal vias
Body diode Q_rr = 37 nC	Reduces reverse recovery loss in bidirectional current paths - critical for battery protection IC co-location
V_GS(th) range -1.4 to -2.6 V	Ensures clean turn-on at 3.3 V/5 V logic levels while avoiding spurious conduction near ground

Applications

Battery Protection Circuit	High-Side Load Switch
Use Scenario: Reverse polarity and overcurrent protection in 2-cell to 4-cell Li-ion packs (8.4–24 V). IC Role / Device Role / Timing Role: High-side P-channel switch controlling main discharge path; activated only during fault conditions. Use Value: Low R_DS(on) limits voltage drop across protection FET, preserving battery runtime and reducing thermal stress on adjacent protection IC.	Use Scenario: Controlled power-up sequencing for FPGA I/O banks or PMIC enable rails in embedded controllers. IC Role / Device Role / Timing Role: Logic-controlled high-side switch isolating downstream circuitry until supply stabilization. Use Value: Fast 24 ns turn-off delay and 9 ns fall time ensure precise timing control and prevent brown-out glitches during hot-swap events.
Motor Drive Brake Control	USB-C Power Delivery Sink
Use Scenario: Dynamic braking in 12–24 V brushed DC motors used in robotics and medical pumps. IC Role / Device Role / Timing Role: Bidirectional current path via body diode and channel conduction during regenerative braking. Use Value: 42 ns trr and low Q_rr minimize switching loss and EMI during rapid brake cycling - validated under 100 A/μs di/dt.	Use Scenario: VBUS disconnection and fault isolation in USB-C PD 3.1 sink designs up to 28 V. IC Role / Device Role / Timing Role: Secondary protection switch placed between CC controller and power path FETs. Use Value: -60 V rating provides 2× margin over USB PD Extended Power Range (EPR) 28 V, ensuring long-term reliability under transient surges.

Battery Protection Circuit

High-Side Load Switch

Use Scenario: Reverse polarity and overcurrent protection in 2-cell to 4-cell Li-ion packs (8.4–24 V).

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main discharge path; activated only during fault conditions.

Use Value: Low R_DS(on) limits voltage drop across protection FET, preserving battery runtime and reducing thermal stress on adjacent protection IC.

Use Scenario: Controlled power-up sequencing for FPGA I/O banks or PMIC enable rails in embedded controllers.

IC Role / Device Role / Timing Role: Logic-controlled high-side switch isolating downstream circuitry until supply stabilization.

Use Value: Fast 24 ns turn-off delay and 9 ns fall time ensure precise timing control and prevent brown-out glitches during hot-swap events.

Motor Drive Brake Control

USB-C Power Delivery Sink

Use Scenario: Dynamic braking in 12–24 V brushed DC motors used in robotics and medical pumps.

IC Role / Device Role / Timing Role: Bidirectional current path via body diode and channel conduction during regenerative braking.

Use Value: 42 ns trr and low Q_rr minimize switching loss and EMI during rapid brake cycling - validated under 100 A/μs di/dt.

Use Scenario: VBUS disconnection and fault isolation in USB-C PD 3.1 sink designs up to 28 V.

IC Role / Device Role / Timing Role: Secondary protection switch placed between CC controller and power path FETs.

Use Value: -60 V rating provides 2× margin over USB PD Extended Power Range (EPR) 28 V, ensuring long-term reliability under transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	Same PowerPAK SO-8 package; -40 V V_DS, 0.012 Ω R_DS(on) @ -10 V, 50 A I_D	Better for 12–24 V systems requiring lower R_DS(on); insufficient for 48 V bus protection	Select when operating voltage ≤ 30 V and higher current capacity is needed - not a drop-in replacement due to lower breakdown rating
IRF9530PBF	TO-220 package; -100 V V_DS, 0.3 Ω R_DS(on) @ -10 V, 12 A I_D	Higher voltage margin but 12× higher R_DS(on) and larger footprint - requires heatsink	Choose only for legacy through-hole designs or where -100 V rating is mandatory; incompatible pinout and thermal profile

Compared with SiR626DP-T1-RE3, SIR5623DP-T1-RE3 offers superior 48 V system compatibility and lower gate charge for logic-level drive, while IRF9530PBF trades efficiency and size for ruggedness in non-space-constrained industrial controls.

Availability

SIR5623DP-T1-RE3 is available at Aetrix Electronics and suitable for battery protection circuits, high-side load switches, motor drive brake control, and USB-C Power Delivery sink applications requiring stable component supply and consistent parametric performance across production lots.

Supply support for SIR5623DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and automotive markets.

The PowerPAK® SO-8 MOSFET product line targets space-constrained, thermally demanding applications such as portable power, battery management, and compact DC-DC conversion - engineered for minimal R_DS(on) × Q_g and robust avalanche performance.

FAQ

What is the maximum continuous drain current for SIR5623DP-T1-RE3 at 70 °C case temperature?

The SIR5623DP-T1-RE3 supports -29.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be verified against actual board layout and ambient conditions in the final design. The SIR5623DP-T1-RE3 datasheet confirms this rating applies under steady-state conditions with proper PCB copper area.

Does SIR5623DP-T1-RE3 have built-in ESD protection?

The SIR5623DP-T1-RE3 does not specify integrated ESD protection diodes in its datasheet; it relies on standard MOSFET gate oxide robustness (±20 V V_GS rating) and external circuit-level protection. No HBM or CDM ESD ratings are published for the SIR5623DP-T1-RE3, so designers must implement discrete TVS or RC networks on gate and source lines in sensitive environments.

Can SIR5623DP-T1-RE3 be used in synchronous rectification topologies?

Yes, the SIR5623DP-T1-RE3 is suitable for synchronous rectification due to its low R_DS(on) (0.046 Ω @ -4.5 V), fast body diode recovery (t_rr = 42 ns), and low Q_rr (37 nC). These parameters reduce conduction and switching losses in buck-derived converters and bidirectional DC-DC stages where the SIR5623DP-T1-RE3 replaces Schottky diodes in high-side or low-side positions.

What is the recommended soldering profile for SIR5623DP-T1-RE3?

The SIR5623DP-T1-RE3 requires peak reflow temperature of 260 °C per the manufacturer's soldering recommendations, aligned with IPC-J-STD-020. Due to its PowerPAK® SO-8 leadless construction, manual soldering with an iron is not recommended; vapor phase or convection reflow is required to ensure reliable interconnection to the exposed drain pad. The SIR5623DP-T1-RE3 datasheet references document 73257 for full profile details.

Is SIR5623DP-T1-RE3 halogen-free and RoHS-compliant?

Yes, the SIR5623DP-T1-RE3 is both lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section and material categorization note referencing Vishay document 99912. It meets RoHS Directive 2011/65/EU and is suitable for environmentally regulated industrial and consumer applications without exemption requests.

SIR5623DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Ta), 37.1A(Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1575 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 59.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5623DP-T1-RE3 FAQ

1.How can I place an order for SIR5623DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5623DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5623DP-T1-RE3 reliable?

The price and inventory of SIR5623DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5623DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR5623DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5623DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5623DP-T1-RE3?

SIR5623DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5623DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5623DP-T1-RE3?

For technical support, including SIR5623DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5623DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR5623DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR5623DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5623DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR5623DP-T1-RE3?

All SIR5623DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5623DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5623DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR5623DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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