Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5708DP-T1-RE3

Name: SIR5708DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR5708DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR5708DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5708DP-T1-RE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET POW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,782

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR5708DP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.023 Ω at V_GS = 10 V, Q_g = 9.7 nC (typ.), and 33.8 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR5708DP-T1-RE3 datasheet, SIR5708DP-T1-RE3 pinout, SIR5708DP-T1-RE3 application, or SIR5708DP-T1-RE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.5 °C/W), body diode recovery (t_rr = 63 ns), gate charge profile, and PowerPAK SO-8 terminal mapping to support layout validation and loss modeling.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon architecture, delivering a low R_DS(on) × Q_g figure-of-merit (FOM) and tuned R_DS(on) × Q_oss FOM for reduced switching and conduction losses. It features 100 % R_g and UIS testing per production lot.

The device operates across -55 °C to +150 °C junction temperature range, supports ±20 V gate drive, and integrates a robust intrinsic body diode with V_SD = 0.79 V (typ.) at I_S = 5 A and Q_rr = 130 nC (typ.), enabling reliable operation in hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - maximum blocking voltage suitable for 48 V–100 V bus systems and flyback/LLC primary-side switching
R_DS(on) max @ V_GS = 10 V	0.023 Ω - enables <1.5 W conduction loss at 8 A RMS in 12 V output synchronous rectifiers
Q_g typ.	9.7 nC - low gate charge reduces driver power demand and improves efficiency in high-frequency (>300 kHz) converters
I_D cont. @ T_C = 25 °C	33.8 A - supports high-current power stages without external heatsinking under moderate PCB copper area
R_thJC max.	1.9 °C/W - enables direct thermal coupling to PCB copper or heatsink for >50 W power handling in compact layouts
t_rr typ.	63 ns - fast body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous buck converters
V_GS(th)	2–4 V - logic-level compatible gate threshold allows direct drive from 3.3 V or 5 V controllers without level-shifting

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four drain terminals connected to large exposed copper paddle - primary thermal path to PCB ground plane
Gate (G)	Control input	Single gate pad (Pin 1 top-view reference) - requires controlled impedance routing to minimize ringing in >1 MHz designs

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.22 Ω·nC, reducing total switching+conduction loss in 300–1000 kHz SMPS
100 % R_g tested	Ensures gate resistance ≤ 2.1 Ω (max), critical for accurate gate drive loss calculation and EMI control
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events up to I_AS = 15 A and E_AS = 11.25 mJ
Optimized R_DS(on) × Q_oss	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and adaptive frequency converters
Exposed drain paddle	Enables <1.9 °C/W junction-to-case thermal resistance - supports >40 W dissipation with 2 oz. inner-layer copper and thermal vias

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, high-frequency (500–800 kHz) buck converter supplying 12 V/30 A to CPU core logic. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode in low-side position. Use Value: 0.023 Ω R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, while 63 ns t_rr prevents cross-conduction during dead-time transitions.	Use Scenario: 48 V input to 12 V/15 A isolated forward converter in PLC power module. IC Role / Device Role / Timing Role: Primary-side switch operating at 200 kHz with ZVS-assisted soft switching. Use Value: Low Q_g (9.7 nC) reduces gate driver power and enables efficient operation with integrated half-bridge drivers like Si823x.
Telecom Rectifier Module	Motor Drive Half-Bridge
Use Scenario: 380 V DC bus to 48 V/20 A output in telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Clamp switch managing leakage energy and enabling zero-voltage turn-on. Use Value: 150 V V_DS rating provides 20 % margin over 380 V bus, while 1.5 °C/W R_thJC sustains 25 W dissipation with minimal heatsink.	Use Scenario: 24 V H-bridge driving brushed DC motor in automated valve actuator (10 A peak). IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with PWM-controlled direction and speed. Use Value: Logic-level V_GS(th) (2–4 V) allows direct drive from MCU GPIO; body diode Q_rr = 130 nC ensures clean freewheeling without voltage spikes.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, high-frequency (500–800 kHz) buck converter supplying 12 V/30 A to CPU core logic.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode in low-side position.

Use Value: 0.023 Ω R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, while 63 ns t_rr prevents cross-conduction during dead-time transitions.

Use Scenario: 48 V input to 12 V/15 A isolated forward converter in PLC power module.

IC Role / Device Role / Timing Role: Primary-side switch operating at 200 kHz with ZVS-assisted soft switching.

Use Value: Low Q_g (9.7 nC) reduces gate driver power and enables efficient operation with integrated half-bridge drivers like Si823x.

Telecom Rectifier Module

Motor Drive Half-Bridge

Use Scenario: 380 V DC bus to 48 V/20 A output in telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Clamp switch managing leakage energy and enabling zero-voltage turn-on.

Use Value: 150 V V_DS rating provides 20 % margin over 380 V bus, while 1.5 °C/W R_thJC sustains 25 W dissipation with minimal heatsink.

Use Scenario: 24 V H-bridge driving brushed DC motor in automated valve actuator (10 A peak).

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with PWM-controlled direction and speed.

Use Value: Logic-level V_GS(th) (2–4 V) allows direct drive from MCU GPIO; body diode Q_rr = 130 nC ensures clean freewheeling without voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.017 Ω @ 10 V, Q_g = 14.5 nC, same PowerPAK SO-8 package	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 300 kHz	Prefer for <300 kHz, high-current (<40 A) applications where thermal margin is constrained
IRF6642TRPBF	R_DS(on) = 0.022 Ω @ 10 V, Q_g = 12.5 nC, PQFN 5×6 mm package (not pin-compatible)	Different footprint requires PCB redesign; slightly higher R_thJA (28 °C/W vs. 24 °C/W)	Consider only when legacy IR design reuse or dual-sourcing across Infineon/Vishay is required

Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIR5708DP-T1-RE3 offers optimal balance of low Q_g and mid-range R_DS(on), making it preferred for 300–600 kHz synchronous rectifiers where gate drive loss and thermal management are co-critical.

Availability

SIR5708DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIR5708DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR5708DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-frequency, high-efficiency power conversion in computing, industrial, and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SIR5708DP-T1-RE3 at 70 °C case temperature?

The SIR5708DP-T1-RE3 supports 27 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual board layout, copper area, and airflow conditions in the final design. The SIR5708DP-T1-RE3 datasheet confirms this value under steady-state conduction with proper PCB thermal management.

Does SIR5708DP-T1-RE3 have avalanche capability, and what are the rated parameters?

Yes, the SIR5708DP-T1-RE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy E_AS = 11.25 mJ and current I_AS = 15 A (L = 0.1 mH). These values are measured under standardized test conditions and define safe operating limits during transient overloads. The SIR5708DP-T1-RE3 specification sheet explicitly lists these parameters in the Absolute Maximum Ratings section.

What is the typical gate-source threshold voltage range for SIR5708DP-T1-RE3, and how does it vary with temperature?

The SIR5708DP-T1-RE3 has a gate-source threshold voltage V_GS(th) of 2–4 V at T_J = 25 °C, with a negative temperature coefficient of -8.6 mV/°C. This means V_GS(th) decreases as junction temperature rises, improving turn-on behavior under thermal stress. The SIR5708DP-T1-RE3 datasheet specifies this variation in the Static Characteristics table and confirms it via transfer characteristic curves across -55 °C to +150 °C.

Is SIR5708DP-T1-RE3 suitable for logic-level gate drive from a 3.3 V microcontroller?

Yes - the SIR5708DP-T1-RE3 has a guaranteed V_GS(th) ≤ 4 V and achieves R_DS(on) = 0.027 Ω at V_GS = 7.5 V, allowing partial enhancement at 3.3 V. However, full enhancement requires ≥7.5 V for optimal efficiency; use with 3.3 V logic necessitates a gate driver or level shifter for hard switching. The SIR5708DP-T1-RE3 product summary confirms its suitability for logic-compatible applications with appropriate drive staging.

What is the thermal resistance from junction to ambient for SIR5708DP-T1-RE3 on a standard FR4 board?

The SIR5708DP-T1-RE3 has a maximum junction-to-ambient thermal resistance R_thJA of 24 °C/W when mounted on a 1" × 1" FR4 board (per note b in datasheet). This value assumes standard JEDEC test conditions and drops significantly with added copper area or thermal vias. The SIR5708DP-T1-RE3 Thermal Resistance Ratings table explicitly states this 24 °C/W maximum under t ≤ 10 s pulse conditions.

SIR5708DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Ta), 33.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 975 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5708DP-T1-RE3 FAQ

1.How can I place an order for SIR5708DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5708DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5708DP-T1-RE3 reliable?

The price and inventory of SIR5708DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5708DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR5708DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5708DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5708DP-T1-RE3?

SIR5708DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5708DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5708DP-T1-RE3?

For technical support, including SIR5708DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5708DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR5708DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR5708DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5708DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR5708DP-T1-RE3?

All SIR5708DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5708DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5708DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR5708DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …