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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR570DP-T1-BE3

Name: SIR570DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR570DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR570DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR570DP-T1-BE3.pdf

Description:: N-CHANNEL 150 V (D-S) 175 C MOSF

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Product details

Overview

SIR570DP-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 7.9 mΩ at V_GS = 10 V, Q_g = 35.1 nC (typ.), and continuous drain current I_D = 77.4 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR570DP-T1-BE3 datasheet, SIR570DP-T1-BE3 pinout, SIR570DP-T1-BE3 application, or SIR570DP-T1-BE3 equivalent, this page provides verified thermal resistance (R_thJC = 0.9 °C/W typ.), body diode recovery (Q_rr = 221 nC), gate charge profile, and PowerPAK SO-8 terminal mapping to support layout, thermal design, and replacement evaluation.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon architecture tuned for minimal R_DS(on) × Q_oss figure-of-merit, enabling low conduction and switching losses in hard-switched topologies. Its 150 V V_DS rating supports 48 V and 60 V bus systems with margin for transient overvoltage.

The device features 100 % R_g and UIS tested units, with a gate threshold voltage V_GS(th) of 2–4 V (25 °C), and exhibits stable on-resistance over temperature (R_DS(on) normalized to 1.9× at T_J = 150 °C). Body diode reverse recovery time t_rr is 84 ns (typ.) under 100 A/μs di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands 120 V DC bus with 25 % safety margin for surge and ringing in industrial and telecom power supplies
R_DS(on) max @ V_GS = 10 V	7.9 mΩ - Enables <1.5 W conduction loss at 40 A continuous drain current in thermally managed PCB layouts
Q_g typ.	35.1 nC - Supports efficient gate drive with standard 1-A peak drivers at 500 kHz switching frequency
I_D continuous @ T_C = 25 °C	77.4 A - Delivers high current density in compact PowerPAK SO-8 footprint without external heatsink
R_thJC max	1.2 °C/W - Allows direct thermal coupling to copper pour or heatsink for junction temperature control below 150 °C
Q_rr typ.	221 nC - Reduces body diode switching loss and EMI in synchronous buck and LLC secondary-side rectification
V_GS(th)	2–4 V - Ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with bottom-side thermal pad for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four drain terminals connected to large internal copper paddle; primary thermal path to PCB via bottom-side exposed metal
Gate (G)	Control input	Single gate terminal (Pin 1 not used as gate; per top view, Gate is Pin 1 in standard SO-8 orientation - but PowerPAK SO-8 pinout differs: confirmed from datasheet top view - Pin 1 = G, Pins 2–4 = S, Pins 5–8 = D)

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Optimized for lowest R_DS(on) × Q_oss FOM - directly reduces total switching energy in high-frequency DC/DC stages
100 % R_g and UIS tested	Guarantees gate resistance consistency (<1.8 Ω max) and ruggedness against unclamped inductive switching stress
Exposed drain paddle	Enables <1.2 °C/W junction-to-case thermal resistance - critical for maintaining T_J < 130 °C in 75 W+ power stages
Low Q_gd/Q_g ratio	Q_gd = 4.2 nC / Q_g = 35.1 nC → ~12 % - improves Miller immunity and enables faster, more controllable turn-off
Body diode t_rr = 84 ns (typ.)	Minimizes reverse recovery tail current and associated cross-conduction loss in synchronous rectifiers

Applications

Synchronous Buck Converter	LLC Resonant Converter
Use Scenario: Secondary-side rectification in 48 V input, 12 V/50 A output telecom power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary gate signal with dead-time control. Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky, enabling >96 % efficiency at full load with 7.9 mΩ R_DS(on).	Use Scenario: Primary-side high-side switch in 3.3 kW server PSU using half-bridge LLC topology. IC Role / Device Role / Timing Role: High-voltage switching element operating at 200–500 kHz with ZVS; handles 150 V bus with 30 % overvoltage margin. Use Value: Low Q_g (35.1 nC) and Q_oss minimize capacitive switching loss during resonant transitions, improving light-load efficiency.
Industrial Motor Drive Inverter	48 V Battery-Powered DC/DC Module
Use Scenario: Half-bridge leg in 1.5 kW BLDC motor driver for automated guided vehicle (AGV). IC Role / Device Role / Timing Role: High-current phase-leg switch; commutated at ≤20 kHz with PWM-controlled gate drive. Use Value: 77.4 A I_D rating and 94 A continuous diode current support 3× peak motor current surges without derating.	Use Scenario: Step-down converter in portable medical device requiring ultra-low EMI and high reliability. IC Role / Device Role / Timing Role: Primary switch in isolated flyback or active-clamp forward converter; operated with soft-start and OCP protection. Use Value: 100 % UIS testing ensures survival during output short-circuit events; R_thJC = 0.9 °C/W enables operation at 70 °C ambient without forced air.

Synchronous Buck Converter

LLC Resonant Converter

Use Scenario: Secondary-side rectification in 48 V input, 12 V/50 A output telecom power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary gate signal with dead-time control.

Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky, enabling >96 % efficiency at full load with 7.9 mΩ R_DS(on).

Use Scenario: Primary-side high-side switch in 3.3 kW server PSU using half-bridge LLC topology.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 200–500 kHz with ZVS; handles 150 V bus with 30 % overvoltage margin.

Use Value: Low Q_g (35.1 nC) and Q_oss minimize capacitive switching loss during resonant transitions, improving light-load efficiency.

Industrial Motor Drive Inverter

48 V Battery-Powered DC/DC Module

Use Scenario: Half-bridge leg in 1.5 kW BLDC motor driver for automated guided vehicle (AGV).

IC Role / Device Role / Timing Role: High-current phase-leg switch; commutated at ≤20 kHz with PWM-controlled gate drive.

Use Value: 77.4 A I_D rating and 94 A continuous diode current support 3× peak motor current surges without derating.

Use Scenario: Step-down converter in portable medical device requiring ultra-low EMI and high reliability.

IC Role / Device Role / Timing Role: Primary switch in isolated flyback or active-clamp forward converter; operated with soft-start and OCP protection.

Use Value: 100 % UIS testing ensures survival during output short-circuit events; R_thJC = 0.9 °C/W enables operation at 70 °C ambient without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N15N5	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 52 nC, TO-220 package	Higher current density but larger footprint and higher gate charge; requires heatsink mounting	Prefer when board space allows TO-220 and lower R_DS(on) outweighs gate drive complexity
ON Semiconductor NTMFS5C673NL	R_DS(on) = 6.7 mΩ @ 10 V, Q_g = 39 nC, PowerTrench® 5x6 mm package	Similar footprint but slightly lower R_DS(on); lacks 100 % UIS test and has higher Q_oss	Consider for cost-sensitive designs where UIS robustness is not mission-critical

Compared with IPP040N15N5 and NTMFS5C673NL, the SIR570DP-T1-BE3 offers best-in-class R_DS(on) × Q_g FOM (277 mΩ·nC) and guaranteed UIS rating - making it optimal for compact, high-reliability synchronous rectifiers and primary switches where thermal management and ruggedness are prioritized over absolute minimum on-resistance.

Availability

SIR570DP-T1-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and battery-powered DC/DC modules requiring stable component supply, long-term lifecycle assurance, and lead (Pb)-free/halogen-free compliance.

Supply support for SIR570DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIR570DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial applications where low FOM and proven UIS capability are mandatory.

FAQ

What is the maximum continuous drain current rating for SIR570DP-T1-BE3 at 70 °C case temperature?

The SIR570DP-T1-BE3 supports 61.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient temperature. The SIR570DP-T1-BE3 maintains R_DS(on) stability up to 150 °C junction temperature, enabling reliable operation in thermally constrained environments.

Does SIR570DP-T1-BE3 have a fully rated body diode for synchronous rectification?

Yes, the SIR570DP-T1-BE3 features a fully characterized and rated intrinsic body diode with 94 A continuous source-drain current (T_C = 25 °C) and 200 A pulsed rating. Its reverse recovery charge Q_rr is 221 nC (typ.) and t_rr is 84 ns (typ.) at 25 °C, enabling efficient synchronous rectification in buck and flyback converters. The SIR570DP-T1-BE3 body diode is 100 % tested during production, ensuring consistent performance across lots.

What is the gate threshold voltage range for SIR570DP-T1-BE3, and how does it affect drive compatibility?

The SIR570DP-T1-BE3 has a gate threshold voltage V_GS(th) of 2–4 V at I_D = 250 µA and T_J = 25 °C. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while avoiding unintended conduction due to noise. The SIR570DP-T1-BE3 V_GS(th) exhibits a negative temperature coefficient (−6.9 mV/°C), meaning threshold decreases with rising temperature - a feature that enhances short-circuit robustness during overload conditions.

Is SIR570DP-T1-BE3 suitable for avalanche energy handling in inductive switching applications?

Yes, the SIR570DP-T1-BE3 is rated for single-pulse avalanche energy E_AS = 45 mJ and single-pulse avalanche current I_AS = 30 A (L = 0.1 mH), confirming its capability to absorb inductive energy during unclamped switching events. All SIR570DP-T1-BE3 units undergo 100 % UIS (unclamped inductive switching) testing, providing production-level assurance of ruggedness - critical for motor drive and relay-driving applications where inductive kickback is unavoidable.

How does the PowerPAK SO-8 package of SIR570DP-T1-BE3 improve thermal performance compared to standard SO-8?

The PowerPAK SO-8 package of the SIR570DP-T1-BE3 replaces conventional leads with an exposed copper drain paddle on the bottom surface, reducing junction-to-case thermal resistance to 0.9 °C/W (typ.) - over 5× better than standard SO-8. This enables direct thermal conduction to PCB copper layers or heatsinks, allowing the SIR570DP-T1-BE3 to sustain 77.4 A at T_C = 25 °C without external cooling. The SIR570DP-T1-BE3 also features four parallel source and drain terminals to minimize parasitic inductance and improve current distribution.

SIR570DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 77.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3740 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR570DP-T1-BE3 FAQ

1.How can I place an order for SIR570DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR570DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR570DP-T1-BE3 reliable?

The price and inventory of SIR570DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR570DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR570DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR570DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR570DP-T1-BE3?

SIR570DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR570DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR570DP-T1-BE3?

For technical support, including SIR570DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR570DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR570DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR570DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR570DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR570DP-T1-BE3?

All SIR570DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR570DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR570DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR570DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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