Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5710DP-T1-RE3

Name: SIR5710DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR5710DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR5710DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5710DP-T1-RE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET POW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR5710DP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0315 Ω @ V_GS = 10 V, Q_g = 7.7 nC (typ.), and continuous drain current I_D = 26.8 A at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR5710DP-T1-RE3 datasheet, SIR5710DP-T1-RE3 pinout, SIR5710DP-T1-RE3 application, or SIR5710DP-T1-RE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.8 °C/W max), body diode characteristics (V_SD = 0.81 V typ. @ I_S = 5 A), and validated alternative parts for power supply and motor drive designs.

Technical Context

This MOSFET uses TrenchFET® Gen V process technology to achieve a low R_DS(on) × Q_g figure-of-merit (FOM) and is tuned specifically for minimal R_DS(on) × Q_oss. It features 100 % R_g and UIS testing, with gate threshold voltage V_GS(th) = 2–4 V and guaranteed avalanche capability (I_AS = 15 A, E_AS = 11.25 mJ).

The device operates across -55 to +150 °C junction temperature range and supports stable switching at V_GS = ±20 V. Its PowerPAK® SO-8 leadless package provides enhanced thermal performance (R_thJC = 1.8 °C/W typ.) and high-current handling via exposed drain pads on the bottom side.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - maximum drain-source blocking voltage suitable for 120 V bus applications with margin.
R_DS(on) @ 10 V	0.0315 Ω max - enables <1 W conduction loss at 10 A, critical for high-current synchronous rectifiers.
Q_g	7.7 nC typ. @ V_GS = 7.5 V - low gate charge reduces driver power and switching losses in high-frequency SMPS.
I_D (T_C = 25 °C)	26.8 A - continuous drain current rating enabling use as primary switch in 300–500 W isolated DC/DC topologies.
R_thJC	1.8 °C/W typical - low junction-to-case thermal resistance allows efficient heat transfer to PCB copper or heatsink.
V_SD	0.81 V typ. @ I_S = 5 A - low body diode forward voltage improves reverse recovery efficiency in freewheeling paths.
E_AS	11.25 mJ - single-pulse avalanche energy rating confirms ruggedness under transient overvoltage stress.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four exposed-drain terminals on bottom side form thermal and electrical path to PCB copper pour for low R_thJA.
G (Gate)	Control input	Single gate terminal located at Pin 1 top-side position; requires <2.4 Ω gate resistance for optimal turn-on/turn-off timing.

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g FOM for reduced conduction + switching losses in 300–1000 kHz converters.
100 % R_g and UIS tested	Ensures gate robustness against ESD and system-level unclamped inductive switching stress without derating.
Low R_DS(on) × Q_oss	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and LLC topologies.
Exposed drain thermal pad	Enables direct thermal coupling to PCB ground plane, achieving R_thJC = 1.8 °C/W and supporting >25 A continuous operation.
V_GS(th) = 2–4 V	Compatible with standard 5 V and 3.3 V logic-level gate drivers, eliminating need for level-shifting circuitry.

Applications

Server VRM Synchronous Rectifier	Industrial DC/DC Primary Switch
Use Scenario: High-current, high-frequency buck converter in server CPU voltage regulator modules (VRMs), operating at 500–1000 kHz with 12 V input and sub-1 V output. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve full-load efficiency. Use Value: R_DS(on) = 0.0315 Ω @ 10 V enables <0.3 W loss at 10 A, reducing thermal load and improving power density vs. diode-based solutions.	Use Scenario: Primary-side switch in isolated 48 V–12 V industrial DC/DC converter using active clamp forward or half-bridge topology. IC Role / Device Role: Main power switch handling up to 26.8 A continuous drain current with 150 V V_DS rating for bus transients. Use Value: Avalanche-rated (E_AS = 11.25 mJ) and 100 % UIS tested - withstands voltage spikes during transformer reset without snubber redesign.
Motor Drive Half-Bridge Leg	Telecom PSU Secondary Side
Use Scenario: Upper/lower leg switch in 24–48 V BLDC motor inverter, requiring fast switching and low R_DS(on) for torque ripple reduction. IC Role / Device Role: N-channel MOSFET in half-bridge configuration, driven by isolated gate driver with 7.5 V–10 V gate bias. Use Value: Q_g = 7.7 nC @ 7.5 V ensures <25 ns turn-on delay and <14 ns rise time - minimizes shoot-through risk and dead-time loss.	Use Scenario: Secondary-side synchronous rectifier in telecom 48 V input, 5 V/12 V output AC/DC power supply with tight efficiency requirements (80 PLUS Titanium). IC Role / Device Role: High-efficiency rectifier replacing Schottky diodes in LLC resonant converter secondary stage. Use Value: V_SD = 0.81 V typ. and Q_rr = 113 nC reduce reverse recovery loss and improve light-load efficiency over discrete diodes.

Server VRM Synchronous Rectifier

Industrial DC/DC Primary Switch

Use Scenario: High-current, high-frequency buck converter in server CPU voltage regulator modules (VRMs), operating at 500–1000 kHz with 12 V input and sub-1 V output.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve full-load efficiency.

Use Value: R_DS(on) = 0.0315 Ω @ 10 V enables <0.3 W loss at 10 A, reducing thermal load and improving power density vs. diode-based solutions.

Use Scenario: Primary-side switch in isolated 48 V–12 V industrial DC/DC converter using active clamp forward or half-bridge topology.

IC Role / Device Role: Main power switch handling up to 26.8 A continuous drain current with 150 V V_DS rating for bus transients.

Use Value: Avalanche-rated (E_AS = 11.25 mJ) and 100 % UIS tested - withstands voltage spikes during transformer reset without snubber redesign.

Motor Drive Half-Bridge Leg

Telecom PSU Secondary Side

Use Scenario: Upper/lower leg switch in 24–48 V BLDC motor inverter, requiring fast switching and low R_DS(on) for torque ripple reduction.

IC Role / Device Role: N-channel MOSFET in half-bridge configuration, driven by isolated gate driver with 7.5 V–10 V gate bias.

Use Value: Q_g = 7.7 nC @ 7.5 V ensures <25 ns turn-on delay and <14 ns rise time - minimizes shoot-through risk and dead-time loss.

Use Scenario: Secondary-side synchronous rectifier in telecom 48 V input, 5 V/12 V output AC/DC power supply with tight efficiency requirements (80 PLUS Titanium).

IC Role / Device Role: High-efficiency rectifier replacing Schottky diodes in LLC resonant converter secondary stage.

Use Value: V_SD = 0.81 V typ. and Q_rr = 113 nC reduce reverse recovery loss and improve light-load efficiency over discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.022 Ω @ 10 V (lower), Q_g = 11.5 nC (higher), same PowerPAK SO-8 package	Better conduction loss but higher switching loss; suited for lower-frequency, high-current apps where Q_g penalty is acceptable	Select SiR626DP-T1-RE3 when R_DS(on) dominates loss budget and switching frequency ≤ 300 kHz.
IRF6642TRPBF	R_DS(on) = 0.032 Ω @ 10 V (similar), Q_g = 12.5 nC (higher), PQFN 5×6 mm package with different pinout	Higher gate charge increases driver loss; non-pin-compatible layout change required due to different footprint and terminal arrangement	Choose IRF6642TRPBF only if legacy design already uses PQFN-5×6 and thermal constraints allow higher R_thJA.

Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIR5710DP-T1-RE3 offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in a compact PowerPAK SO-8 - making it ideal for 300–800 kHz DC/DC converters where both conduction and switching losses must be minimized without layout redesign.

Availability

SIR5710DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, BLDC motor drives, and telecom power supplies requiring stable component supply and long-term production continuity.

Supply support for SIR5710DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR5710DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered for high-frequency, high-efficiency power conversion in computing, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIR5710DP-T1-RE3 at case temperature of 70 °C?

The SIR5710DP-T1-RE3 has a continuous drain current rating of 21.4 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be used in thermal design calculations alongside R_thJC = 1.8 °C/W to ensure junction temperature remains ≤150 °C.

Does SIR5710DP-T1-RE3 support logic-level gate drive?

Yes, the SIR5710DP-T1-RE3 supports logic-level gate drive with V_GS(th) = 2–4 V and fully specified R_DS(on) down to V_GS = 7.5 V (0.037 Ω max). It is compatible with standard 3.3 V and 5 V microcontroller outputs or gate drivers without requiring external level shifters, simplifying control circuit design.

What is the body diode forward voltage of SIR5710DP-T1-RE3 at 5 A source current?

The body diode forward voltage (V_SD) of the SIR5710DP-T1-RE3 is 0.81 V typical at I_S = 5 A and V_GS = 0 V, per the Drain-Source Body Diode Characteristics table. This low V_SD contributes to improved efficiency in freewheeling and synchronous rectification modes where the intrinsic diode conducts.

Is SIR5710DP-T1-RE3 qualified for avalanche operation?

Yes, the SIR5710DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ and current I_AS = 15 A (L = 0.1 mH). This qualification ensures robustness against inductive turn-off transients in hard-switched topologies without external snubbers.

What is the thermal resistance from junction to ambient (R_thJA) for SIR5710DP-T1-RE3 on a 1" × 1" FR4 board?

The maximum junction-to-ambient thermal resistance (R_thJA) for SIR5710DP-T1-RE3 mounted on a 1" × 1" FR4 board is 26 °C/W, with a typical value of 22 °C/W. This value assumes standard JEDEC test conditions (Note b in datasheet) and serves as a baseline for estimating worst-case junction temperature in natural-convection PCB layouts.

SIR5710DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7.8A (Ta), 26.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 31.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 4.8W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5710DP-T1-RE3 FAQ

1.How can I place an order for SIR5710DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5710DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5710DP-T1-RE3 reliable?

The price and inventory of SIR5710DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5710DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR5710DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5710DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5710DP-T1-RE3?

SIR5710DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5710DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5710DP-T1-RE3?

For technical support, including SIR5710DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5710DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR5710DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR5710DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5710DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR5710DP-T1-RE3?

All SIR5710DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5710DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5710DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR5710DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …