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Vishay Siliconix SIR572DP-T1-BE3
- Part No.:
- SIR572DP-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR572DP-T1-BE3.pdf
- Description:
- N-CHANNEL 150 V (D-S) MOSFET 150
- Quantity:
- Payment:
- Shipping:
Inventory:6,279
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Product details
Overview
SIR572DP-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, rated for 59.7 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0108 Ω at VGS = 10 V and total gate charge of 27 nC (typ.) - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIR572DP-T1-BE3 datasheet, SIR572DP-T1-BE3 pinout, SIR572DP-T1-BE3 application, or SIR572DP-T1-BE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, body diode characteristics, and real-world design implications for power stage optimization in industrial and telecom power supplies.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to achieve a low RDS(on) × Qg figure-of-merit (FOM) and is specifically tuned for minimal RDS(on) × Qoss FOM - critical for reducing conduction and switching losses in hard-switched and resonant topologies. It features 100 % Rg and UIS testing for robustness.
The device integrates a fast-recovery body diode with trr = 73 ns (typ.) and Qrr = 154 nC (typ.) at TJ = 25 °C, enabling efficient operation in synchronous rectifier configurations where reverse recovery behavior directly impacts efficiency and EMI. Its PowerPAK SO-8 leadless package delivers low RthJC = 1.1 °C/W (typ.) for effective heat transfer to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 150 V - supports primary-side switching in 48 V input telecom and industrial DC/DC converters up to 100 W output. |
| RDS(on) (max) @ VGS = 10 V | 0.0108 Ω - enables <1.1 W conduction loss at 10 A, reducing thermal stress in compact power stages. |
| Qg (typ.) | 27 nC - lowers gate drive power requirement and allows use with standard 1-A peak gate drivers without excessive dissipation. |
| ID (cont.) @ TC = 25 °C | 59.7 A - supports high-current output rails in server VRMs and POL converters when mounted on ≥1"×1" FR4 with 2 oz copper. |
| RthJC (typ.) | 1.1 °C/W - permits direct thermal coupling to heatsink or internal PCB plane, enabling >80 W sustained power dissipation with modest heatsinking. |
| VGS(th) range | 2–4 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers while avoiding spurious turn-on from noise. |
| Body diode VSD (typ.) | 0.76 V @ IS = 5 A - reduces forward conduction loss during dead-time in synchronous buck converters versus Schottky alternatives. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large exposed copper pad - primary thermal path and high-current return path. |
| G (Gate) | Control input | Single gate terminal located at Pin 1 corner; requires <1.8 Ω gate resistance to damp ringing per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers lowest RDS(on) × Qg and RDS(on) × Qoss FOM in its voltage class - directly reduces combined conduction + switching loss in 100–500 kHz converters. |
| 100 % Rg tested | Ensures gate resistance ≤1.8 Ω (max), minimizing gate loop oscillation risk and enabling predictable turn-on/turn-off timing. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events up to 20 mJ - critical for motor drive and flyback primary switch reliability. |
| Optimized body diode | trr = 73 ns (typ.) and Qrr = 154 nC (typ.) - reduces reverse recovery loss and associated EMI in synchronous rectifiers without external Schottky. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912) - suitable for automotive and industrial green programs. |
Applications
| Synchronous Rectifier in Isolated DC/DC | Primary-Side Switch in Flyback Converter |
|---|---|
Use Scenario: Used as secondary-side switch in 48 V–12 V isolated DC/DC converter operating at 300 kHz with active clamp control. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch. Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky, enabling >95 % peak efficiency and eliminating diode thermal derating at full load. |
Use Scenario: Primary-side main switch in universal-input (90–264 VAC) flyback powering PoE++ PSE interface. IC Role / Device Role / Timing Role: High-voltage switching element handling 150 V blocking and 10 A peak current; operated in discontinuous conduction mode (DCM). Use Value: Low Qg (27 nC) minimizes driver loss; RDS(on) × Qoss tuning suppresses capacitive turn-on loss, improving light-load efficiency by 2.1 %. |
| High-Current POL Converter | Brushless DC Motor Phase Switch |
Use Scenario: High-side switch in 12 V input, 1.2 V/60 A point-of-load (POL) buck converter for AI accelerator card. IC Role / Device Role / Timing Role: Upper MOSFET in dual-phase interleaved buck; switched at 600 kHz with 30 ns dead time. Use Value: 0.0108 Ω RDS(on) limits conduction loss to <0.7 W at 60 A, while low Crss (4.5 pF) prevents Miller-induced shoot-through. |
Use Scenario: Low-side phase switch in 24 V, 3-phase BLDC motor driver for industrial pump (1.5 kW). IC Role / Device Role / Timing Role: PWM-controlled N-channel switch in 6-step commutation; handles 35 A RMS with 100 μs overcurrent pulses. Use Value: 84.1 A IS rating and 20 mJ EAS support short-circuit robustness; low RDS(on) maintains <0.5 °C/W junction-to-case rise under continuous load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-BE3 | 150 V, RDS(on) = 0.0072 Ω @ 10 V, Qg = 42 nC - lower RDS(on) but higher gate charge increases switching loss. | Better for low-frequency, high-current applications (e.g., motor drive); less optimal for >300 kHz DC/DC due to higher Qg. | Select SiR626DP-T1-BE3 only if conduction loss dominates and gate drive capability supports 42 nC. |
| IRF6642TRPBF | 150 V, RDS(on) = 0.0115 Ω @ 10 V, Qg = 22 nC - slightly higher RDS(on), lower Qg, same PowerSO-8 package. | Preferred where gate drive strength is limited or layout sensitivity to Qgd-induced ringing is high. | Choose IRF6642TRPBF when optimizing for gate drive simplicity and EMI margin over absolute conduction efficiency. |
Compared with SIR572DP-T1-BE3, SiR626DP-T1-BE3 trades higher switching loss for lower conduction loss, while IRF6642TRPBF offers faster switching at the cost of marginally higher resistive loss - making SIR572DP-T1-BE3 the balanced choice for mid-frequency, high-efficiency DC/DC designs.
Availability
SIR572DP-T1-BE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive control requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom OEM programs.
Supply support for SIR572DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR572DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V family - engineered specifically for high-frequency, high-efficiency power conversion in telecom, server, and industrial power supplies where low FOM and ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for SIR572DP-T1-BE3 at TC = 70 °C?
The SIR572DP-T1-BE3 supports 47.8 A continuous drain current at case temperature (TC) of 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerPAK SO-8 package under real-world board-mount conditions - designers must ensure adequate copper area and airflow to maintain TC ≤ 70 °C for full-rated operation. The SIR572DP-T1-BE3 datasheet confirms this value is measured on a 1" × 1" FR4 board with 2 oz copper.
Does SIR572DP-T1-BE3 have a fully characterized body diode for synchronous rectification?
Yes, the SIR572DP-T1-BE3 includes a fully characterized body diode with VSD = 0.76 V (typ.) at IS = 5 A and VGS = 0 V, trr = 73 ns (typ.), and Qrr = 154 nC (typ.) at TJ = 25 °C. These parameters are measured and guaranteed per the datasheet's Drain-Source Body Diode Characteristics section - enabling accurate modeling of reverse recovery loss in synchronous buck or LLC rectifier stages without external diode supplementation. The SIR572DP-T1-BE3 body diode performance is integral to its FOM optimization.
What is the thermal resistance from junction to case (RthJC) for SIR572DP-T1-BE3, and how does it impact heatsink design?
The SIR572DP-T1-BE3 has a typical junction-to-case thermal resistance (RthJC) of 1.1 °C/W, with a maximum of 1.35 °C/W. This low value results from the exposed drain pad in the PowerPAK SO-8 package, which serves as the primary thermal path. For a 92.5 W PD rating at TC = 25 °C, this RthJC enables direct mounting to a heatsink or internal copper plane - eliminating need for complex thermal vias in many applications. The SIR572DP-T1-BE3 thermal performance is validated per JEDEC JESD51-14 standards.
Is SIR572DP-T1-BE3 suitable for use in automotive applications?
The SIR572DP-T1-BE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. While its operating temperature range (−55 °C to +150 °C) meets under-hood ambient requirements, Vishay explicitly states that its products are not designed for life-sustaining applications unless specifically qualified in writing. For automotive infotainment or body electronics where qualification is not mandated, the SIR572DP-T1-BE3 may be used at the designer's risk - but the SIR572DP-T1-BE3 datasheet does not include AEC test reports or automotive-specific reliability data.
How does the gate charge profile of SIR572DP-T1-BE3 affect gate driver selection?
The SIR572DP-T1-BE3 has Qg = 27 nC (typ.) at VGS = 7.5 V and VDS = 75 V, with Qgs = 12.7 nC and Qgd = 3.8 nC. This low Qgd/Qg ratio (≈14 %) minimizes Miller plateau duration and reduces susceptibility to false turn-on - allowing use with standard 1-A peak gate drivers (e.g., TI UCC27531) without external Miller clamping. The SIR572DP-T1-BE3 gate resistance (Rg = 0.4–1.8 Ω) further simplifies driver impedance matching for clean edge control in 300–600 kHz applications.
SIR572DP-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.8A (Ta), 59.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2733 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.7W (Ta), 92.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR572DP-T1-BE3 FAQ
1.How can I place an order for SIR572DP-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR572DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR572DP-T1-BE3 reliable?
The price and inventory of SIR572DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR572DP-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SIR572DP-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR572DP-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR572DP-T1-BE3?
SIR572DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR572DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR572DP-T1-BE3?
For technical support, including SIR572DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR572DP-T1-BE3 requirements.
6.How does Aetrix verify that SIR572DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SIR572DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR572DP-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SIR572DP-T1-BE3?
All SIR572DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR572DP-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR572DP-T1-BE3 part is unused and in its original packaging.
Return procedure for SIR572DP-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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