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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR574DP-T1-BE3

Name: SIR574DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR574DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR574DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR574DP-T1-BE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET 150

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Product details

Overview

SIR574DP-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 13.5 mΩ at V_GS = 10 V, Q_g = 23.6 nC (typ.), and continuous drain current I_D = 48.1 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR574DP-T1-BE3 datasheet, SIR574DP-T1-BE3 pinout, SIR574DP-T1-BE3 application, or SIR574DP-T1-BE3 equivalent, this device offers verified low R_DS(on) × Q_oss figure-of-merit, 100 % R_g and UIS tested reliability, and thermal resistance R_thJC = 1.3 °C/W - critical for compact, thermally constrained power stage designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve a tuned balance between conduction loss (R_DS(on)) and switching loss (Q_g, Q_oss, C_iss), with C_iss = 2300 pF and Q_oss = 68 pC at V_DS = 75 V. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling robust drive compatibility with standard 5 V and 10 V controllers.

The device integrates a fast body diode with t_rr = 68 ns (typ.) and Q_rr = 143 nC (typ.) at I_F = 10 A, supporting efficient hard-switched and synchronous rectifier operation. Thermal design is enabled by its low R_thJC = 1.3 °C/W and leadless PowerPAK SO-8 footprint optimized for bottom-side thermal transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports primary-side switching in 48 V–96 V input DC/DC and offline auxiliary supplies up to 120 V DC bus.
R_DS(on) max @ V_GS = 10 V	13.5 mΩ - enables <1.3 W conduction loss at 10 A, critical for high-current, low-voltage output stages.
Q_g typ.	23.6 nC - reduces gate drive power and enables >500 kHz switching with moderate gate driver strength (e.g., 1 A peak).
I_D continuous @ T_C = 25 °C	48.1 A - supports high-power density designs without external heatsinking when mounted on 1" × 1" FR4 board.
R_thJC max	1.6 °C/W - allows direct thermal coupling to PCB copper or heatsink, enabling junction temperature control under sustained load.
t_rr typ.	68 ns - minimizes reverse recovery loss in synchronous rectifier applications, improving efficiency over Si diodes.
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard logic-level and PWM controller outputs; avoids false triggering near ground.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 are internally bonded and electrically tied - used for low-inductance return path and thermal conduction.
5, 6, 7, 8	Drain (D)	Common drain connection; pins 5–8 form the exposed copper thermal pad - primary heat dissipation path to PCB.
G (Gate)	Gate (G)	Single gate terminal (pin 1 top-view reference); requires controlled slew rate to minimize EMI; R_g = 0.4–1.8 Ω (typ./max).

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_oss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS.
100 % R_g and UIS tested	Ensures gate robustness against transient overstress and avalanche energy handling (E_AS = 11.25 mJ) in real-world fault conditions.
Low Q_gd/Q_g ratio	Q_gd = 3.7 nC / Q_g = 23.6 nC ≈ 15.7 % - improves Miller immunity and enables stable hard-switching above 300 kHz.
Optimized body diode	V_SD = 0.78 V (typ.) at 5 A and t_rr = 68 ns - reduces reverse recovery loss and ringing in synchronous rectifier configurations.
Exposed-drain thermal pad	Enables <1.6 °C/W junction-to-case resistance - supports >75 W power dissipation with minimal PCB copper area (1" × 1" FR4).

Applications

Server VRM Output Stage	Industrial DC/DC Primary Switch
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, operating in continuous conduction mode with 300–1000 kHz PWM. Use Value: 13.5 mΩ R_DS(on) and 68 ns t_rr reduce conduction and recovery losses, directly improving conversion efficiency by ≥0.5 % at full load.	Use Scenario: Isolated flyback or forward converter in industrial PLC power supply (24–48 V input, 5–24 V output). IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer at 65–130 kHz, with integrated snubber and clamp protection. Use Value: 150 V V_DS rating and 15 A single-pulse avalanche current (I_AS) ensure safe operation during line transients and transformer leakage spikes.
Motor Drive Half-Bridge	Telecom Rectifier Module
Use Scenario: 24–48 V BLDC motor inverter stage driving fans, pumps, or actuators in HVAC and automation systems. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase half-bridge topology, commutated at 8–20 kHz. Use Value: 48.1 A I_D rating and 71 A continuous source current (I_S) support peak motor currents without derating or external paralleling.	Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier (–48 V output, 10–30 A load). IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in center-tapped or LLC resonant secondary. Use Value: 0.78 V V_SD and low Q_oss cut forward and switching losses by >30 % vs. 40 V Schottky, increasing module efficiency from 92 % to 94.5 %.

Server VRM Output Stage

Industrial DC/DC Primary Switch

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, operating in continuous conduction mode with 300–1000 kHz PWM.

Use Value: 13.5 mΩ R_DS(on) and 68 ns t_rr reduce conduction and recovery losses, directly improving conversion efficiency by ≥0.5 % at full load.

Use Scenario: Isolated flyback or forward converter in industrial PLC power supply (24–48 V input, 5–24 V output).

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer at 65–130 kHz, with integrated snubber and clamp protection.

Use Value: 150 V V_DS rating and 15 A single-pulse avalanche current (I_AS) ensure safe operation during line transients and transformer leakage spikes.

Motor Drive Half-Bridge

Telecom Rectifier Module

Use Scenario: 24–48 V BLDC motor inverter stage driving fans, pumps, or actuators in HVAC and automation systems.

IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase half-bridge topology, commutated at 8–20 kHz.

Use Value: 48.1 A I_D rating and 71 A continuous source current (I_S) support peak motor currents without derating or external paralleling.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier (–48 V output, 10–30 A load).

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in center-tapped or LLC resonant secondary.

Use Value: 0.78 V V_SD and low Q_oss cut forward and switching losses by >30 % vs. 40 V Schottky, increasing module efficiency from 92 % to 94.5 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	Same PowerPAK SO-8 package, but 100 V V_DS, 3.2 mΩ R_DS(on) @ 10 V, higher I_D = 90 A - lower conduction loss at ≤100 V bus.	Better suited for 12–48 V input DC/DC where lower R_DS(on) dominates efficiency; not rated for 150 V primary-side use.	Select SiR626DP-T1-RE3 only if system V_DS stress remains ≤100 V and thermal margin allows higher current density.
IRF6642TRPBF	PowerSO-8 package, 150 V V_DS, 14.5 mΩ R_DS(on) @ 10 V, Q_g = 27 nC - slightly higher switching loss and larger thermal resistance (R_thJC = 2.0 °C/W).	Compatible in layout-constrained space but requires larger copper area or heatsink to match SIR574DP-T1-BE3 thermal performance.	Choose IRF6642TRPBF only if legacy qualification or dual-sourcing mandates Infineon parts; expect ~5 % higher total loss at 500 kHz.

Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIR574DP-T1-BE3 uniquely balances 150 V capability, 13.5 mΩ conduction resistance, and 23.6 nC gate charge - making it the optimal choice for 48–96 V input, high-frequency synchronous rectifiers and primary switches where both voltage margin and switching efficiency are critical.

Availability

SIR574DP-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, motor drive inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIR574DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.

The SIR574DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in computing, industrial, and telecom infrastructure where low R_DS(on) × Q_oss FOM is essential.

FAQ

What is the maximum continuous drain current rating for SIR574DP-T1-BE3 at case temperature of 70 °C?

The SIR574DP-T1-BE3 supports a continuous drain current I_D of 38.4 A when the case temperature (T_C) is maintained at 70 °C. This rating is defined under steady-state thermal conditions and assumes proper PCB copper area and thermal vias per Vishay's recommended PowerPAK SO-8 layout. Derating applies above 70 °C per the thermal resistance curve in the datasheet.

Does SIR574DP-T1-BE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SIR574DP-T1-BE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy E_AS = 11.25 mJ with L = 0.1 mH. This capability ensures robustness during inductive load switching events and transient overvoltage conditions without requiring external snubbers in many applications.

What is the gate-source threshold voltage range for SIR574DP-T1-BE3, and how does it vary with temperature?

The SIR574DP-T1-BE3 has a gate-source threshold voltage V_GS(th) range of 2.0 V to 4.0 V at T_J = 25 °C, with a negative temperature coefficient of –6.7 mV/°C. As junction temperature rises, V_GS(th) decreases - ensuring stable turn-on behavior across –55 °C to +150 °C operating range without unintended conduction.

Can SIR574DP-T1-BE3 be used as a synchronous rectifier in a 48 V input LLC resonant converter?

Yes, the SIR574DP-T1-BE3 is qualified for synchronous rectification in 48 V input LLC converters due to its 150 V V_DS rating, low R_DS(on) of 13.5 mΩ, and fast body diode (t_rr = 68 ns). Its low Q_oss and Q_g also minimize switching loss during zero-voltage switching transitions, directly improving full-load efficiency.

What is the thermal resistance from junction to ambient (R_thJA) for SIR574DP-T1-BE3 on a standard 1" × 1" FR4 board?

On a 1" × 1" FR4 board (per note b in the datasheet), the SIR574DP-T1-BE3 has a maximum junction-to-ambient thermal resistance R_thJA of 25 °C/W for t ≤ 10 s. For steady-state operation, the effective R_thJA depends on copper area and via count - typical values range from 40–65 °C/W without added heatsinking.

SIR574DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 12.1A (Ta), 48.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR574DP-T1-BE3 FAQ

1.How can I place an order for SIR574DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR574DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR574DP-T1-BE3 reliable?

The price and inventory of SIR574DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR574DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR574DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR574DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR574DP-T1-BE3?

SIR574DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR574DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR574DP-T1-BE3?

For technical support, including SIR574DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR574DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR574DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR574DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR574DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR574DP-T1-BE3?

All SIR574DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR574DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR574DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR574DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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