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Vishay Siliconix SIR574DP-T1-RE3
- Part No.:
- SIR574DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR574DP-T1-RE3.pdf
- Description:
- N-CHANNEL 150 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:5,950
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Product details
Overview
SIR574DP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 13.5 mΩ at VGS = 10 V, Qg = 23.6 nC (typ.), and continuous drain current ID = 48.1 A (TC = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIR574DP-T1-RE3 datasheet, SIR574DP-T1-RE3 pinout, SIR574DP-T1-RE3 application, or SIR574DP-T1-RE3 equivalent, this page provides verified thermal resistance (RthJC = 1.3 °C/W typ.), body diode recovery (Qrr = 143 nC), avalanche energy rating (EAS = 11.25 mJ), and leadless PowerPAK SO-8 layout considerations including exposed drain pad soldering guidance.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon architecture to minimize RDS(on) × Qg and RDS(on) × Qoss figures-of-merit, enabling high-frequency switching with low conduction and gate-drive losses. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 7.5 V and 10 V logic-level drive.
The device integrates a fast, low-VSD body diode (VSD = 0.78 V typ. at IS = 5 A) with trr = 68 ns (typ.) and Qrr = 143 nC (typ.), supporting hard-switched and synchronous rectifier topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum drain-source blocking voltage; suitable for 100 V bus systems with 50 % safety margin. |
| RDS(on) max @ VGS = 10 V | 13.5 mΩ - Low on-resistance enables <1.5 W conduction loss at 40 A, reducing heatsink requirements. |
| Qg typ. | 23.6 nC - Gate charge value determines required driver current for 100 kHz–1 MHz switching; enables efficient gate drive with ≤2 A peak drivers. |
| ID continuous @ TC = 25 °C | 48.1 A - Rated current under ideal heatsinking; derates to 38.4 A at TC = 70 °C per thermal limits. |
| RthJC max | 1.6 °C/W - Junction-to-case thermal resistance defines minimum heatsink interface performance needed to maintain TJ ≤ 150 °C. |
| EAS | 11.25 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients in motor drive or converter primary switches. |
| Qrr | 143 nC - Body diode reverse recovery charge directly impacts switching loss and EMI in synchronous rectifier operation. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); features four drain terminals (pins 1, 2, 3, 8), single gate (pin 4), and three source terminals (pins 5, 6, 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain (D) | Four parallel drain connections tied to large exposed copper pad on bottom side; primary current path and thermal conduction path to PCB heatsink. |
| 4 | Gate (G) | Control terminal; requires low-inductance routing and gate resistor (Rg = 0.4–1.8 Ω typ.) to manage dV/dt and oscillation. |
| 5, 6, 7 | Source (S) | Three parallel source terminals; form Kelvin sense path for accurate gate drive referencing and reduce source inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables industry-leading RDS(on) × Qg FOM of ~0.32 Ω·nC, reducing combined conduction and switching losses in high-frequency SMPS. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (0.4–1.8 Ω) and validated unclamped inductive switching robustness for reliable operation in hard-switched converters. |
| Optimized RDS(on) × Qoss FOM | Minimizes output capacitance-related turn-on loss and improves light-load efficiency in resonant and ZVS topologies. |
| Exposed drain thermal pad | Provides direct thermal path from junction to PCB; achieves RthJC = 1.3 °C/W typical when soldered to ≥1 in² copper area. |
| Low VSD body diode | VSD = 0.78 V (typ.) at IS = 5 A reduces reverse conduction loss during dead-time in synchronous rectifiers. |
Applications
| Server VRM / POL Converter | Industrial DC/DC Module |
|---|---|
Use Scenario: High-current point-of-load regulation in AI accelerator cards requiring >40 A per phase at 12 V input and 0.8 V output. IC Role / Device Role: Synchronous rectifier switch in multiphase buck converter, operating at 500 kHz–1 MHz. Use Value: Low RDS(on) (13.5 mΩ) and Qg (23.6 nC) minimize total power loss (<1.2 W at 40 A), enabling compact thermal design without forced air. |
Use Scenario: Isolated 48 V–12 V industrial DC/DC module for programmable logic controllers with tight space constraints. IC Role / Device Role: Primary-side MOSFET in active-clamp forward or LLC resonant converter. Use Value: 150 V VDS rating and 11.25 mJ EAS ensure safe operation during 48 V bus transients and transformer leakage spikes. |
| Telecom Rectifier | Brushless DC Motor Drive |
Use Scenario: 48 V telecom rectifier board converting AC to regulated -48 V DC with >96 % efficiency target. IC Role / Device Role: Secondary-side synchronous rectifier in full-wave center-tapped topology. Use Value: Fast body diode (trr = 68 ns, Qrr = 143 nC) enables precise synchronous timing, reducing cross-conduction risk and improving light-load efficiency. |
Use Scenario: 3-phase inverter stage in 1–3 kW BLDC motor drive for HVAC compressors. IC Role / Device Role: High-side and low-side switching element in half-bridge leg, driven by isolated gate drivers. Use Value: Robust UIS rating and 150 V VDS withstand motor back-EMF spikes up to 120 V, eliminating need for snubbers in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 14.5 mΩ @ 10 V; Qg = 25.5 nC; same PowerSO-8 package but non-exposed drain. | Higher RthJA (35 °C/W vs. 25 °C/W) limits power density in thermally constrained layouts. | Acceptable where PCB copper area is limited and thermal budget allows 10–15 % higher conduction loss. |
| IXTP110N15T | TO-220 package; RDS(on) = 11.0 mΩ @ 10 V; Qg = 42 nC; no integrated low-Qoss optimization. | Requires mechanical mounting and heatsink; unsuitable for surface-mount-only production or ultra-thin modules. | Preferred only when legacy through-hole assembly or extreme ruggedness (150 A pulsed) outweighs size and efficiency goals. |
Compared with IRF6642TRPBF and IXTP110N15T, the SIR574DP-T1-RE3 delivers superior power density via its exposed-drain PowerPAK SO-8, lower switching loss due to reduced Qg/Qoss, and validated avalanche capability-making it optimal for space-constrained, high-frequency, high-reliability DC/DC and motor control designs.
Availability
SIR574DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom rectifiers requiring stable component supply, RoHS-compliant lead-free packaging, and long-term production continuity.
Supply support for SIR574DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and miniaturization.
The SIR574DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in datacenter, industrial, and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for SIR574DP-T1-RE3 at case temperature 70 °C?
The SIR574DP-T1-RE3 supports 38.4 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating from 48.1 A at 25 °C reflects thermal limitations of the PowerPAK SO-8 package and must be validated with actual board-level thermal measurement under steady-state conditions. The SIR574DP-T1-RE3 datasheet confirms this value is measured on a 1" × 1" FR4 board with 2 oz copper.
Does SIR574DP-T1-RE3 have a guaranteed avalanche rating, and what is its value?
Yes, the SIR574DP-T1-RE3 is 100 % tested for unclamped inductive switching (UIS) and specifies a single-pulse avalanche energy rating of 11.25 mJ at TJ = 25 °C. This value is measured with L = 0.1 mH and validates robustness against inductive turn-off transients in motor drives and flyback converters. The SIR574DP-T1-RE3 datasheet lists IAS = 15 A as the corresponding peak avalanche current.
What is the gate threshold voltage range for SIR574DP-T1-RE3, and how does it affect drive compatibility?
The SIR574DP-T1-RE3 has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 μA, making it compatible with standard 5 V and 3.3 V logic-level gate drivers. Its Gen V TrenchFET® structure ensures stable threshold across temperature (ΔVGS(th)/TJ = −6.7 mV/°C), enabling reliable turn-on even at elevated junction temperatures. This behavior is confirmed in the SIR574DP-T1-RE3 specifications table.
How is thermal performance characterized for SIR574DP-T1-RE3, and what is the typical junction-to-case resistance?
The SIR574DP-T1-RE3 specifies a typical junction-to-case (drain) thermal resistance RthJC of 1.3 °C/W, with a maximum of 1.6 °C/W. This value assumes proper soldering of the exposed drain pad to ≥1 in² of 2 oz copper on FR4. The SIR574DP-T1-RE3 datasheet notes that RthJC is more relevant than RthJA for heatsink-integrated designs, and the 1.3 °C/W figure enables accurate junction temperature prediction under high-power operation.
Is SIR574DP-T1-RE3 suitable for synchronous rectification, and what body diode parameters support this use?
Yes, the SIR574DP-T1-RE3 is explicitly recommended for synchronous rectification per its Applications section. Key supporting parameters include low body diode forward voltage VSD = 0.78 V (typ.) at IS = 5 A, fast reverse recovery time trr = 68 ns (typ.), and Qrr = 143 nC (typ.). These values-documented in the SIR574DP-T1-RE3 specifications table-reduce conduction loss and switching noise compared to discrete Schottky solutions in 100–500 kHz applications.
SIR574DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.1A (Ta), 48.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR574DP-T1-RE3 FAQ
1.How can I place an order for SIR574DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR574DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR574DP-T1-RE3 reliable?
The price and inventory of SIR574DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR574DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR574DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR574DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR574DP-T1-RE3?
SIR574DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR574DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR574DP-T1-RE3?
For technical support, including SIR574DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR574DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR574DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR574DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR574DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR574DP-T1-RE3?
All SIR574DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR574DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR574DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR574DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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