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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR576DP-T1-BE3

Name: SIR576DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR576DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR576DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR576DP-T1-BE3.pdf

Description:: N-CHANNEL 150 V (D-S) MOSFET 150

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Product details

Overview

SIR576DP-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.016 Ω at V_GS = 10 V, Q_g = 19 nC (typ.), and continuous drain current I_D = 42.2 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR576DP-T1-BE3 datasheet, SIR576DP-T1-BE3 pinout, SIR576DP-T1-BE3 application, or SIR576DP-T1-BE3 equivalent, this page provides verified thermal resistance (R_thJC = 1.4 °C/W typ.), body diode recovery metrics (Q_rr = 128 nC, t_rr = 67 ns), and junction temperature range (–55 to +150 °C) critical for motor drive and primary-side switch design.

Technical Context

This MOSFET uses TrenchFET® Gen V process technology to achieve a low R_DS(on) × Q_g figure-of-merit (FOM) and is tuned specifically for minimal R_DS(on) × Q_oss. It features 100 % R_g and UIS testing, with gate threshold voltage V_GS(th) = 2–4 V and guaranteed avalanche energy E_AS = 12.8 mJ.

The device operates with ±20 V gate-source voltage rating and supports pulsed drain current I_DM = 120 A. Its PowerPAK® SO-8 leadless package enables high-power density mounting on FR4 PCBs, with exposed copper drain terminals for enhanced thermal conduction and R_thJC = 1.4 °C/W (typ.) under steady-state conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage for primary-side switching in 48 V–100 V bus systems
R_DS(on) max @ V_GS = 10 V	0.016 Ω - Enables <1.6 W conduction loss at 10 A, critical for high-current synchronous rectifiers
Q_g typ.	19 nC - Low gate charge reduces driver power demand and switching losses in high-frequency DC/DC converters
I_D continuous @ T_C = 25 °C	42.2 A - Supports high-output-current power supplies without external heatsinking at moderate case temperatures
R_thJC max	1.75 °C/W - Confirms thermal path efficiency from junction to exposed drain pad, enabling direct PCB copper pour cooling
Q_rr typ.	128 nC - Quantifies reverse recovery charge of integrated body diode, directly impacting turn-off loss in hard-switched topologies
E_AS	12.8 mJ - Single-pulse avalanche energy rating ensures robustness during transient overvoltage events in motor control

Pinout & Package

Package: PowerPAK® SO-8 (leadless, surface-mount), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with exposed copper drain terminals on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four exposed-copper drain pads provide low-inductance, high-current return path and primary thermal conduction path to PCB
G (Gate)	Gate (G)	Single gate terminal located at Pin 1 position per top-view diagram; requires controlled gate drive to avoid oscillation due to low R_g = 0.4–1.7 Ω

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g FOM for reduced conduction + switching loss trade-off in 100–500 kHz converters
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive H-bridges
Low R_DS(on) × Q_oss tuning	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and LLC topologies
Exposed drain thermal pad	Enables direct thermal coupling to inner-layer copper pours, achieving R_thJA = 20 °C/W (typ.) on 1" × 1" FR4 board
Body diode t_rr = 67 ns (typ.)	Reduces reverse recovery overshoot and EMI in synchronous rectifier operation versus standard silicon MOSFETs

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switching in isolated 12 V/24 V/48 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: N-channel power MOSFET replacing Schottky diodes to reduce forward voltage drop and conduction loss. Use Value: Achieves >95 % efficiency at 40 A output by lowering V_SD to ~0.78 V and minimizing Q_rr-induced switching loss.	Use Scenario: High-side switch in non-isolated buck converters for industrial motor drives and battery-powered tools. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor-capacitor network. Use Value: Supports 150 V bus with 42.2 A continuous current and withstands 120 A pulse, enabling compact 500 W–1 kW designs.
DC/DC Converter Output Stage	Power Supply Primary Switch
Use Scenario: Output synchronous rectifier in 400 kHz–1 MHz multiphase VRMs for AI accelerators and FPGA power delivery. IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET synchronized to PWM controller timing to replace freewheeling diode. Use Value: Low Q_g (19 nC) and fast t_f (15–30 ns) enable precise gate drive timing and minimize dead-time loss.	Use Scenario: Primary switch in flyback or forward converters for AC/DC adapters and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switching element handling full input voltage and transformer magnetizing current. Use Value: 150 V V_DS rating and 12.8 mJ E_AS ensure reliable operation during line surges and transformer leakage spikes.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switching in isolated 12 V/24 V/48 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: N-channel power MOSFET replacing Schottky diodes to reduce forward voltage drop and conduction loss.

Use Value: Achieves >95 % efficiency at 40 A output by lowering V_SD to ~0.78 V and minimizing Q_rr-induced switching loss.

Use Scenario: High-side switch in non-isolated buck converters for industrial motor drives and battery-powered tools.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to output inductor-capacitor network.

Use Value: Supports 150 V bus with 42.2 A continuous current and withstands 120 A pulse, enabling compact 500 W–1 kW designs.

DC/DC Converter Output Stage

Power Supply Primary Switch

Use Scenario: Output synchronous rectifier in 400 kHz–1 MHz multiphase VRMs for AI accelerators and FPGA power delivery.

IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET synchronized to PWM controller timing to replace freewheeling diode.

Use Value: Low Q_g (19 nC) and fast t_f (15–30 ns) enable precise gate drive timing and minimize dead-time loss.

Use Scenario: Primary switch in flyback or forward converters for AC/DC adapters and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switching element handling full input voltage and transformer magnetizing current.

Use Value: 150 V V_DS rating and 12.8 mJ E_AS ensure reliable operation during line surges and transformer leakage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-BE3	R_DS(on) = 0.011 Ω @ 10 V, V_DS = 100 V, Q_g = 22 nC - lower R_DS(on) but reduced voltage rating	Optimized for ≤100 V bus systems; not suitable for 150 V primary-side switching	Select when system V_IN ≤ 80 V and lowest conduction loss is prioritized over voltage margin
IRF6642TRPBF	R_DS(on) = 0.015 Ω @ 10 V, V_DS = 150 V, Q_g = 24 nC - same voltage rating but higher Q_g and older Gen IV process	Compatible pinout but higher switching loss; lacks Q_oss-optimized tuning	Acceptable drop-in replacement where layout reuse is critical and 15 % higher Q_g is tolerable

Compared with SiR626DP-T1-BE3 and IRF6642TRPBF, the SIR576DP-T1-BE3 uniquely balances 150 V capability, 0.016 Ω R_DS(on), and 19 nC Q_g-making it optimal for high-efficiency, medium-voltage synchronous rectifiers where both voltage headroom and switching speed matter.

Availability

SIR576DP-T1-BE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive control, and power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIR576DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR576DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-current switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum junction temperature rating for SIR576DP-T1-BE3?

The SIR576DP-T1-BE3 has an operating junction temperature range of –55 °C to +150 °C, with absolute maximum T_J = +150 °C. This rating is validated across all qualified manufacturing locations and supports operation in demanding industrial and automotive under-hood environments when thermal design meets R_thJC = 1.4 °C/W (typ.) requirements.

Does SIR576DP-T1-BE3 have a specified body diode reverse recovery time?

Yes, the SIR576DP-T1-BE3 specifies t_rr = 67 ns (typ.) at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. This value is measured per JEDEC standards and directly impacts switching loss in synchronous rectifier configurations-enabling accurate loss modeling in SPICE simulations and thermal analysis.

Is SIR576DP-T1-BE3 RoHS-compliant and halogen-free?

Yes, the SIR576DP-T1-BE3 is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document www.vishay.com/doc?99912. The "-BE3" suffix explicitly denotes compliance with RoHS Directive 2011/65/EU and JEDEC JS709B, with full test reports available upon request.

What is the gate threshold voltage range for SIR576DP-T1-BE3?

The SIR576DP-T1-BE3 has a gate-source threshold voltage V_GS(th) of 2.0 V to 4.0 V at I_D = 250 μA and T_J = 25 °C. Its negative temperature coefficient (–6.4 mV/°C) ensures stable turn-on behavior across –55 °C to +150 °C, supporting robust gate drive design in wide-temperature applications.

Can SIR576DP-T1-BE3 be used in avalanche-rated circuits?

Yes, the SIR576DP-T1-BE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 12.8 mJ at I_AS = 16 A and L = 0.1 mH. This makes it suitable for motor drive freewheeling paths and flyback snubberless designs where inductive energy must be safely absorbed within the MOSFET.

SIR576DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 11.1A (Ta), 42.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1870 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 71.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR576DP-T1-BE3 FAQ

1.How can I place an order for SIR576DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR576DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR576DP-T1-BE3 reliable?

The price and inventory of SIR576DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR576DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR576DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR576DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR576DP-T1-BE3?

SIR576DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR576DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR576DP-T1-BE3?

For technical support, including SIR576DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR576DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR576DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR576DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR576DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR576DP-T1-BE3?

All SIR576DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR576DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR576DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR576DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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