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Vishay Siliconix SIR578DP-T1-BE3
- Part No.:
- SIR578DP-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR578DP-T1-BE3.pdf
- Description:
- N-CHANNEL 150 V (D-S) MOSFET 150
- Quantity:
- Payment:
- Shipping:
Inventory:7,213
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Product details
Overview
SIR578DP-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.0088 Ω at VGS = 10 V, Qg = 24.5 nC (typ.), and continuous drain current of 70.2 A (TC = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIR578DP-T1-BE3 datasheet, SIR578DP-T1-BE3 pinout, SIR578DP-T1-BE3 application, or SIR578DP-T1-BE3 equivalent, this page provides verified thermal resistance (RthJC = 0.9 °C/W max), avalanche energy rating (EAS = 45 mJ), body diode recovery characteristics (trr = 85 ns typ.), and leadless PowerPAK SO-8 layout guidance to support robust high-current power stage design.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon architecture tuned for minimal RDS(on) × Qoss figure-of-merit, enabling fast switching with low conduction and capacitive losses. It features 100 % Rg and UIS testing for production reliability.
Designed for surface-mount operation on FR4 PCBs, the PowerPAK SO-8 package exposes copper drain terminals on the bottom side for enhanced thermal conduction; solder fillet at the exposed copper tip is not required per Vishay specification (Doc. 73257).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum drain-source blocking voltage for primary-side switch or synchronous rectifier in 48 V–100 V bus systems. |
| RDS(on) max @ VGS = 10 V | 0.0088 Ω - Enables ≤ 12.3 W conduction loss at 70.2 A, critical for high-current power stages. |
| Qg typ. | 24.5 nC - Low gate charge supports efficient 500 kHz+ switching in hard-switched DC/DC converters. |
| ID continuous (TC = 25 °C) | 70.2 A - High current capability suitable for server VRMs, telecom PSUs, and motor drive half-bridges. |
| RthJC max | 1.2 °C/W - Enables direct heatsink mounting for thermal management under sustained >60 W dissipation. |
| EAS | 45 mJ - Robust single-pulse avalanche rating supports reliable operation during transient overvoltage events. |
| trr typ. | 85 ns - Fast body diode recovery reduces cross-conduction loss in synchronous rectification topologies. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, bottom-terminal drain configuration; dimensions: 6.15 mm × 5.15 mm × 1.04 mm height; JEDEC MO-247 compatible).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four exposed-copper drain pads on bottom side provide low-inductance, high-current path to PCB ground plane/heatsink. |
| G (top-side pad) | Gate (G) | Single top-side gate terminal enables standard pick-and-place and controlled gate drive routing without via congestion. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Optimized for lowest RDS(on) × Qoss FOM - directly improves efficiency in high-frequency, high-duty-cycle SMPS. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drives. |
| PowerPAK SO-8 leadless construction | Reduces package inductance by >50 % vs. SO-8, minimizing switching overshoot and EMI in fast-switching designs. |
| VGS(th) = 2–4 V | Enables clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting complexity. |
| Body diode Qrr = 200–400 nC | Low reverse recovery charge minimizes shoot-through risk and conduction loss in synchronous buck/flyback rectifiers. |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom DC/DC Power Supplies |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500–1000 kHz with synchronous rectification. Use Value: Low RDS(on) (0.0088 Ω) and Qg (24.5 nC) minimize conduction + switching losses, enabling >95 % efficiency at 100 A output. |
Use Scenario: Isolated forward or active-clamp forward converter in 48 V telecom rectifier systems. IC Role / Device Role / Timing Role: Primary-side main switch handling 150 V bus transients and high peak currents. Use Value: 150 V VDS, 45 mJ EAS, and 85 ns trr ensure reliable operation under line surges and light-load diode conduction. |
| Industrial Motor Drive Half-Bridges | High-Efficiency LED Driver Power Stages |
Use Scenario: 3-phase inverter stage driving BLDC motors up to 2 kW with field-oriented control. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with fast body diode commutation. Use Value: 94 A IS and 200 A ISM support high peak torque pulses; low Qgd/Qg ratio ensures clean gate drive in noisy EMI environments. |
Use Scenario: Buck-based constant-current driver for high-brightness LED arrays in street lighting or horticulture fixtures. IC Role / Device Role / Timing Role: Main switching element regulating 30–100 V LED string voltage at 200–500 kHz. Use Value: Tight RDS(on) tolerance (±15 %) and stable VGS(th) (-7 mV/°C tempco) maintain precise current regulation across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-BE3 | Higher RDS(on) = 0.0125 Ω @ 10 V; lower Qg = 18.5 nC; same PowerPAK SO-8 package. | Better suited for ultra-high-frequency (>1 MHz) resonant converters where Qg dominates loss, not high-current conduction. | Select SiR626DP-T1-BE3 when prioritizing switching speed over conduction loss at <50 A load. |
| IRF6642TRPBF | Same VDS (150 V), but RDS(on) = 0.011 Ω @ 10 V and Qg = 28 nC; different PQFN 5×6 mm footprint. | Requires PCB layout change; higher gate charge increases driver loss in high-frequency operation. | Choose IRF6642TRPBF only if legacy design uses Infineon's PQFN-5x6 and thermal margin permits higher RDS(on). |
Compared with SiR626DP-T1-BE3 and IRF6642TRPBF, the SIR578DP-T1-BE3 delivers the lowest RDS(on) × Qg product (0.215 Ω·nC) among these 150 V MOSFETs, making it optimal for high-current, medium-frequency (<800 kHz) power conversion where conduction loss dominates total loss.
Availability
SIR578DP-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC supplies, and industrial motor drives requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SIR578DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR578DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-current, high-efficiency DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum junction temperature rating for the SIR578DP-T1-BE3?
The SIR578DP-T1-BE3 has an operating junction temperature range of -55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table (Document 63019, Rev. E), and thermal derating curves show usable current down to ambient temperatures as low as -40 °C with appropriate heatsinking. The 150 °C limit enables high-power density designs in constrained thermal environments.
Does the SIR578DP-T1-BE3 require special rework considerations due to its PowerPAK SO-8 package?
Yes - manual soldering with a soldering iron is not recommended for the SIR578DP-T1-BE3, as stated in Note e of the datasheet. Its PowerPAK SO-8 is a leadless package with exposed copper drain terminals; rework must use controlled-profile hot-air or infrared reflow to avoid thermal shock or pad lifting. Rework guidelines are detailed in Vishay Application Note AN826 and solder profile Doc. 73257.
Is the SIR578DP-T1-BE3 suitable for synchronous rectification in flyback converters?
Yes - the SIR578DP-T1-BE3 is explicitly listed for synchronous rectification in its Applications section. Its low VSD (0.75 V typ. at 5 A), fast trr (85 ns typ.), and low Qrr (200 nC typ.) enable significant efficiency gains over Schottky diodes in 65–100 kHz flyback designs, especially at output voltages above 12 V where conduction loss dominates.
What is the gate threshold voltage range for the SIR578DP-T1-BE3, and how does it affect drive compatibility?
The SIR578DP-T1-BE3 has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 μA, per the Specifications table. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, while the negative temperature coefficient (-7.0 mV/°C) maintains stable switching behavior across -55 °C to +150 °C junction temperatures without requiring adaptive biasing.
How is thermal performance characterized for the SIR578DP-T1-BE3 in real-world PCB layouts?
Vishay characterizes the SIR578DP-T1-BE3 with RthJA = 15–20 °C/W (t ≤ 10 s) on a 1″ × 1″ FR4 board (Note b), and RthJC = 0.9–1.2 °C/W (steady state) to the case. For production designs, the recommended minimum pad layout (Application Note 826) specifies 4.42 mm × 6.61 mm copper area per drain pad to achieve the rated RthJC performance and sustain 104 W power dissipation at TC = 25 °C.
SIR578DP-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.2A (Ta), 70.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2540 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR578DP-T1-BE3 FAQ
1.How can I place an order for SIR578DP-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR578DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR578DP-T1-BE3 reliable?
The price and inventory of SIR578DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR578DP-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SIR578DP-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR578DP-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR578DP-T1-BE3?
SIR578DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR578DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR578DP-T1-BE3?
For technical support, including SIR578DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR578DP-T1-BE3 requirements.
6.How does Aetrix verify that SIR578DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SIR578DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR578DP-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SIR578DP-T1-BE3?
All SIR578DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR578DP-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR578DP-T1-BE3 part is unused and in its original packaging.
Return procedure for SIR578DP-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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