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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5802DP-T1-BE3

Name: SIR5802DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR5802DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR5802DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5802DP-T1-BE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET 150C

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Product details

Overview

SIR5802DP-T1-BE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.4 mΩ (typ.) at V_GS = 10 V and 3.25 mΩ (typ.) at V_GS = 7.5 V, with total gate charge Q_g = 28 nC (typ.), rated for 137.5 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR5802DP-T1-BE3 datasheet, SIR5802DP-T1-BE3 pinout, SIR5802DP-T1-BE3 application, or SIR5802DP-T1-BE3 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_g figure of merit, optimized Q_gd/Q_gs ratio for reduced switching loss, 100 % R_g and UIS testing, and thermal performance with R_thJC = 0.9 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve low conduction and switching losses simultaneously. Its gate charge profile-Q_gs = 16.5 nC and Q_gd = 3.2 nC (typ.)-enables fast, controlled turn-on/turn-off with minimal Miller-induced oscillation, while the 0.0024 Ω R_DS(on) at 10 V supports high-current primary-side switching in 48 V input telecom and server power supplies.

The device features a robust body diode with t_rr = 60 ns (typ.) and Q_rr = 74 nC (typ.) at I_F = 20 A, enabling efficient reverse recovery in OR-ing and hot-swap applications. Thermal design is supported by a low junction-to-case resistance (0.9 °C/W typ.) and validated soldering compatibility with standard lead-free reflow profiles per document 73257.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with margin.
R_DS(on) (V_GS = 10 V)	0.0024 Ω (typ.) - Enables <1 W conduction loss at 20 A, critical for high-current power stages.
Q_g	28 nC (typ.) - Low gate drive energy requirement reduces driver IC loading and switching loss.
I_D (T_C = 25 °C)	137.5 A - High continuous current rating supports compact, high-power-density PCB layouts.
R_thJC	0.9 °C/W (typ.) - Enables direct heatsinking to copper planes or external heatsinks for thermal management.
Q_gd/Q_gs Ratio	~0.19 - Optimized for reduced Miller plateau duration and improved EMI behavior during hard switching.
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with bottom-side thermal pad for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large internal copper paddle; primary thermal path to PCB.
Gate (G)	Control terminal	Single gate pad (Pin 1 top-view reference); requires low-inductance routing to minimize ringing.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g FOM of ~67 mΩ·nC, enabling higher efficiency in high-frequency SMPS.
Optimized Q_gd/Q_gs ratio	Reduces Miller-induced shoot-through risk and improves controllability during transition through linear region.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Exposed drain paddle	Provides low-thermal-resistance path (<1.2 °C/W max) from junction to PCB copper, supporting >100 W dissipation with proper layout.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for green manufacturing requirements.

Applications

Synchronous Rectification	Primary Side Switch
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom rectifiers. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode; driven by transformer-coupled or active gate driver synchronized to primary switch. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, improving full-load efficiency from 92 % to 95.5 % at 100 A output.	Use Scenario: Primary-side high-current switch in 48 V input, 380 V output LLC resonant converter for data center PSUs. IC Role / Device Role / Timing Role: Main power switch handling up to 137.5 A pulsed current; operated at 100–300 kHz with zero-voltage switching. Use Value: Ultra-low R_DS(on) minimizes conduction loss at high duty cycle; low Q_g enables efficient gate driving with integrated half-bridge controllers.
OR-ing and Hot Swap	Battery Management
Use Scenario: Back-to-back MOSFET configuration in redundant 12 V/24 V power distribution units for industrial PLCs. IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch; controlled by dedicated OR-ing controller (e.g., LTC4359) for seamless switchover. Use Value: Low V_SD (0.73 V typ.) and fast body diode recovery (t_rr = 60 ns) prevent cross-conduction and reduce power-up surge current.	Use Scenario: High-side protection switch in 48 V lithium-ion battery packs for e-mobility auxiliary systems. IC Role / Device Role / Timing Role: Load disconnect and short-circuit protection element; driven by battery monitor IC (e.g., BQ76952) via level-shifted gate signal. Use Value: 80 V V_DS rating provides margin above 48 V nominal; 100 % UIS tested ensures survivability during load dump transients.

Synchronous Rectification

Primary Side Switch

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom rectifiers.

IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode; driven by transformer-coupled or active gate driver synchronized to primary switch.

Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, improving full-load efficiency from 92 % to 95.5 % at 100 A output.

Use Scenario: Primary-side high-current switch in 48 V input, 380 V output LLC resonant converter for data center PSUs.

IC Role / Device Role / Timing Role: Main power switch handling up to 137.5 A pulsed current; operated at 100–300 kHz with zero-voltage switching.

Use Value: Ultra-low R_DS(on) minimizes conduction loss at high duty cycle; low Q_g enables efficient gate driving with integrated half-bridge controllers.

OR-ing and Hot Swap

Battery Management

Use Scenario: Back-to-back MOSFET configuration in redundant 12 V/24 V power distribution units for industrial PLCs.

IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch; controlled by dedicated OR-ing controller (e.g., LTC4359) for seamless switchover.

Use Value: Low V_SD (0.73 V typ.) and fast body diode recovery (t_rr = 60 ns) prevent cross-conduction and reduce power-up surge current.

Use Scenario: High-side protection switch in 48 V lithium-ion battery packs for e-mobility auxiliary systems.

IC Role / Device Role / Timing Role: Load disconnect and short-circuit protection element; driven by battery monitor IC (e.g., BQ76952) via level-shifted gate signal.

Use Value: 80 V V_DS rating provides margin above 48 V nominal; 100 % UIS tested ensures survivability during load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 3.1 mΩ @ 10 V; Q_g = 22 nC; PowerSO-8 package (larger footprint, higher R_thJA)	Higher conduction loss at >30 A; less suitable for ultra-dense 48 V buck converters	Prefer SIR5802DP-T1-BE3 where board space and thermal performance are constrained.
SiR626DP-T1-RE3	Same PowerPAK SO-8 package; R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 31 nC; 60 V V_DS rating	Lower voltage rating limits use to ≤36 V systems; higher Q_g increases switching loss at >500 kHz	Select SIR5802DP-T1-BE3 for 48 V+ systems requiring 80 V blocking and lowest R_DS(on).

Compared with IRF6642TRPBF and SiR626DP-T1-RE3, the SIR5802DP-T1-BE3 offers the lowest R_DS(on) × Q_g FOM in its class, superior thermal resistance, and full 80 V rating-making it optimal for high-current, high-efficiency 48 V power conversion where layout density and thermal headroom are critical.

Availability

SIR5802DP-T1-BE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, OR-ing/hot-swap, motor drive control, and battery management applications requiring stable component supply across high-volume industrial and computing programs.

Supply support for SIR5802DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial, computing, and automotive markets.

The SIR5802DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for next-generation high-current, high-frequency DC/DC conversion in data centers, telecom infrastructure, and battery-powered systems demanding ultra-low conduction and switching losses.

FAQ

What is the maximum continuous drain current rating for SIR5802DP-T1-BE3 at case temperature of 70 °C?

The SIR5802DP-T1-BE3 supports 110 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints and assumes adequate PCB copper area and airflow. The device maintains R_DS(on) stability across this range, enabling reliable operation in thermally demanding environments such as enclosed server power supplies. Always verify thermal design using the provided R_thJC = 0.9 °C/W (typ.) value for accurate junction temperature estimation.

Does SIR5802DP-T1-BE3 require a gate resistor for stable switching in a 200 kHz LLC resonant converter?

Yes, SIR5802DP-T1-BE3 benefits from an external gate resistor (typically 2–10 Ω) to dampen ringing and control dV/dt during switching transitions. Its low gate resistance (R_g = 0.4–1.9 Ω) and fast turn-on delay (16 ns typ. at V_GEN = 10 V) make it susceptible to parasitic oscillation without proper gate loop inductance management. The recommended value depends on driver strength and layout; a 4.7 Ω resistor balances switching speed and EMI in most 200 kHz LLC designs using the SIR5802DP-T1-BE3.

Can SIR5802DP-T1-BE3 be used in a back-to-back configuration for bidirectional 48 V battery isolation?

Yes, SIR5802DP-T1-BE3 is suitable for back-to-back configurations in bidirectional 48 V battery isolation, leveraging its 80 V V_DS rating and robust body diode (I_S = 94.5 A continuous, t_rr = 60 ns typ.). When paired with a matched device and driven by complementary signals, it provides low-loss forward conduction and controlled reverse recovery. Ensure gate drive sequencing prevents shoot-through, and verify avalanche capability (E_AS = 101.2 mJ) covers expected fault energy in the SIR5802DP-T1-BE3 implementation.

What is the thermal resistance from junction to ambient (R_thJA) for SIR5802DP-T1-BE3 on a standard 1" × 1" FR4 board?

The SIR5802DP-T1-BE3 exhibits R_thJA = 15 °C/W (typ.) and 20 °C/W (max.) when mounted on a 1" × 1" FR4 board with 2 oz copper, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions (Note b). For production designs, actual R_thJA will vary with PCB stack-up, copper area, and airflow; use the lower R_thJC = 0.9 °C/W (typ.) for heatsink-coupled thermal modeling. The SIR5802DP-T1-BE3's exposed drain paddle significantly improves thermal performance over traditional SO-8 packages.

Is SIR5802DP-T1-BE3 compatible with lead-free reflow soldering processes?

Yes, SIR5802DP-T1-BE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, as stated in the Absolute Maximum Ratings table and confirmed in Vishay document 73257. The PowerPAK SO-8 package uses matte tin plating and is designed for compatibility with standard IPC/JEDEC J-STD-020 profiles. Note that manual soldering with an iron is not recommended due to the leadless construction and thermal mass of the exposed drain paddle-reflow is the preferred assembly method for the SIR5802DP-T1-BE3.

SIR5802DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 33.6A (Ta), 137.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3020 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5802DP-T1-BE3 FAQ

1.How can I place an order for SIR5802DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5802DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5802DP-T1-BE3 reliable?

The price and inventory of SIR5802DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5802DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR5802DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5802DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5802DP-T1-BE3?

SIR5802DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5802DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5802DP-T1-BE3?

For technical support, including SIR5802DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5802DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR5802DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR5802DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5802DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR5802DP-T1-BE3?

All SIR5802DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5802DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5802DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR5802DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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