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Vishay Siliconix SIR582DP-T1-BE3
- Part No.:
- SIR582DP-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR582DP-T1-BE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET 150
- Quantity:
- Payment:
- Shipping:
Inventory:9,954
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Product details
Overview
SIR582DP-T1-BE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 3.4 mΩ at VGS = 10 V, Qg = 33.5 nC (typ.), and continuous drain current ID = 116 A (TC = 25 °C), optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SIR582DP-T1-BE3 datasheet, SIR582DP-T1-BE3 pinout, SIR582DP-T1-BE3 application, or SIR582DP-T1-BE3 equivalent, this page provides verified thermal resistance (RthJC = 1.1 °C/W typ.), body diode recovery characteristics (trr = 67 ns typ., Qrr = 88 nC), and absolute maximum ratings including VGS = ±20 V and TJ = -55 to +150 °C - all critical for power stage layout, thermal design, and reliability validation.
Technical Context
This MOSFET employs trench-gate silicon technology with optimized charge distribution to achieve a low RDS(on) × Qoss figure-of-merit, targeting reduced switching losses in hard-switched topologies. Its gate threshold voltage VGS(th) ranges from 2 V to 4 V at ID = 250 μA, enabling robust turn-on control with standard 7.5 V or 10 V gate drivers.
The device integrates a fast, low-VSD body diode (VSD = 0.75 V typ. at IS = 5 A, VGS = 0 V) and is 100 % Rg and UIS tested. Thermal performance is characterized with RthJC = 1.1 °C/W (max 1.35 °C/W) and RthJA = 18 °C/W (t ≤ 10 s), supporting high-power density designs on FR4 PCBs with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V and 60 V bus applications. |
| RDS(on) max @ VGS = 10 V | 3.4 mΩ - Conduction loss of ~0.4 W at 116 A; enables high-current, low-voltage-drop switching in power stages. |
| Qg typ. @ VGS = 7.5 V | 33.5 nC - Gate drive energy requirement; determines driver sizing and switching loss in 100–500 kHz converters. |
| ID continuous @ TC = 25 °C | 116 A - Package-limited current capacity; requires direct thermal path to copper plane or heatsink for sustained operation. |
| RthJC typical | 1.1 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature prediction when mounted on thermally enhanced pads. |
| trr typ. | 67 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk and EMI in synchronous buck or LLC resonant converters. |
| VGS(th) | 2–4 V - Gate threshold voltage range; ensures reliable turn-on with 5 V logic-level drivers and avoids false triggering near ground. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H). Bottom-side copper drain pad enhances thermal conduction and current handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large bottom-side thermal pad; primary current return path and heat sink interface. |
| G (Gate) | Control input | Single gate terminal located at Pin 1 side; requires low-inductance routing to minimize ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V architecture | Optimized cell pitch and trench depth yield lowest RDS(on) × Qoss FOM for reduced switching loss in high-frequency DC/DC stages. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive and OR-ing applications. |
| Exposed-drain PowerPAK® SO-8 | Bottom-side copper pad delivers 1.1 °C/W RthJC, enabling >90 W dissipation without external heatsink when properly soldered to 1"×1" FR4 copper area. |
| Low VSD body diode | VSD = 0.75 V typ. at 5 A reduces conduction loss during dead-time conduction in synchronous rectifiers and half-bridge configurations. |
| Enhanced avalanche rating | EAS = 80 mJ supports reliable operation under transient overvoltage events in DC bus protection and hot-swap circuits. |
Applications
| Synchronous Rectification | Primary-Side Switching |
|---|---|
Use Scenario: High-efficiency secondary-side switching in isolated DC/DC converters (e.g., telecom 48 V to 12 V). IC Role / Device Role / Timing Role: Low-loss power switch replacing Schottky diodes; conducts during synchronous rectifier phase with precise gate timing. Use Value: Reduces conduction loss by >50 % vs. 40 V Schottky, improving full-load efficiency by up to 1.2 % at 100 A output. |
Use Scenario: Main switching element in non-isolated buck converters for server VRMs and GPU power delivery. IC Role / Device Role / Timing Role: High-current, high-frequency power switch controlled by PWM controller; handles peak currents up to 300 A pulsed. Use Value: Enables 500 kHz operation with <1.5 W switching loss at 10 A load due to low Qg and Qoss. |
| OR-ing and Hot Swap | Battery Management Systems |
Use Scenario: Redundant power rail selection in enterprise storage and networking equipment with inrush current limiting. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode; blocks reverse current and regulates turn-on slew rate. Use Value: Eliminates 0.4 V forward drop of mechanical relays or discrete diodes, reducing power loss by 3.2 W per 8 A rail. |
Use Scenario: Cell-balancing and protection switching in 12–24 V Li-ion battery packs for industrial tools and UPS systems. IC Role / Device Role / Timing Role: High-reliability main disconnect switch; withstands repeated short-circuit events and reverse polarity faults. Use Value: Supports 116 A continuous discharge with integrated avalanche energy rating (EAS = 80 mJ) for fault-tolerant pack design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-RE3 | RDS(on) = 2.8 mΩ @ 10 V (lower), Qg = 44.5 nC (higher), same PowerPAK SO-8 package. | Better conduction loss but higher gate drive demand; suited for lower-frequency, high-current apps where switching loss is secondary. | Select SiR626DP-T1-RE3 when optimizing for <100 kHz operation with peak ID > 130 A; SIR582DP-T1-BE3 preferred for 200–600 kHz with balanced loss trade-off. |
| IRF6642TRPBF | RDS(on) = 3.2 mΩ @ 10 V, Qg = 27 nC, PQFN 5×6 mm package; no exposed drain pad. | Lower Qg improves high-frequency efficiency but lacks thermal performance: RthJC = 2.0 °C/W vs. 1.1 °C/W for SIR582DP-T1-BE3. | Choose IRF6642TRPBF for space-constrained layouts needing minimal footprint; SIR582DP-T1-BE3 when thermal management dominates board-level design. |
Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIR582DP-T1-BE3 offers the optimal balance of low RDS(on), moderate Qg, and industry-leading RthJC, making it especially suitable for thermally demanding, medium-to-high-frequency power conversion where both conduction and switching losses must be tightly controlled.
Availability
SIR582DP-T1-BE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term production continuity, and traceable sourcing for industrial and telecom power systems.
Supply support for SIR582DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.
The SIR582DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-current, high-efficiency DC/DC conversion in data center, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SIR582DP-T1-BE3 at case temperature of 70 °C?
The SIR582DP-T1-BE3 supports 93 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual board-level thermal resistance and ambient conditions. The SIR582DP-T1-BE3 datasheet confirms this value under steady-state conditions with proper PCB copper area.
Does SIR582DP-T1-BE3 have an integrated body diode, and what are its key recovery parameters?
Yes, the SIR582DP-T1-BE3 includes a built-in body diode with trr = 67 ns (typ.) and Qrr = 88 nC (typ.) at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C. These values are measured and guaranteed per datasheet Section 1, enabling accurate dead-time optimization in synchronous rectifier designs using the SIR582DP-T1-BE3.
What is the gate threshold voltage range for SIR582DP-T1-BE3, and how does it affect driver compatibility?
The SIR582DP-T1-BE3 has a gate threshold voltage VGS(th) of 2 V to 4 V at ID = 250 μA, ensuring compatibility with standard 5 V and 7.5 V gate drivers while avoiding unintended turn-on near ground. This range is confirmed in the "Specifications" table of the SIR582DP-T1-BE3 datasheet and supports robust noise immunity in noisy power environments.
Is SIR582DP-T1-BE3 suitable for avalanche-rated applications, and what is its single-pulse energy rating?
Yes, the SIR582DP-T1-BE3 is 100 % UIS tested and rated for single-pulse avalanche energy EAS = 80 mJ with L = 0.1 mH, as stated in its Absolute Maximum Ratings. This makes the SIR582DP-T1-BE3 appropriate for applications subject to inductive switching transients, such as motor drives and hot-swap controllers, where unclamped energy must be safely absorbed.
What is the thermal resistance from junction to case (RthJC) for SIR582DP-T1-BE3, and how is it used in thermal design?
The SIR582DP-T1-BE3 has a typical junction-to-case thermal resistance RthJC of 1.1 °C/W, with a maximum of 1.35 °C/W. This parameter is used to calculate junction temperature rise above the case (ΔTJC = PD × RthJC) and is essential for validating thermal margin when mounting the SIR582DP-T1-BE3 on PCBs with defined copper area and thermal vias.
SIR582DP-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 28.9A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3360 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.6W (Ta), 92.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR582DP-T1-BE3 FAQ
1.How can I place an order for SIR582DP-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR582DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR582DP-T1-BE3 reliable?
The price and inventory of SIR582DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR582DP-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SIR582DP-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR582DP-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR582DP-T1-BE3?
SIR582DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR582DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR582DP-T1-BE3?
For technical support, including SIR582DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR582DP-T1-BE3 requirements.
6.How does Aetrix verify that SIR582DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SIR582DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR582DP-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SIR582DP-T1-BE3?
All SIR582DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR582DP-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR582DP-T1-BE3 part is unused and in its original packaging.
Return procedure for SIR582DP-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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