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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR582DP-T1-RE3

Name: SIR582DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR582DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR582DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR582DP-T1-RE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET POWE

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Product details

Overview

SIR582DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 3.4 mΩ at V_GS = 10 V, Q_g = 33.5 nC (typ.), and continuous drain current I_D = 116 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR582DP-T1-RE3 datasheet, SIR582DP-T1-RE3 pinout, SIR582DP-T1-RE3 application, or SIR582DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100 % R_g and UIS testing, and suitability for primary-side switching in compact, thermally constrained power supplies.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V process to achieve ultra-low conduction and switching losses. Its gate charge profile is tuned specifically for minimal R_DS(on) × Q_oss, enabling high-frequency operation with reduced switching energy loss in hard-switched topologies.

The device features a robust body diode with t_rr = 67 ns (typ.) and Q_rr = 88 nC (typ.) at I_F = 10 A, supporting efficient reverse recovery in synchronous rectifier and OR-ing applications. Thermal resistance R_thJC is rated at 1.1 °C/W (typ.), facilitating direct heatsink mounting via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48 V input bus designs with 20 % margin.
R_DS(on) max @ V_GS = 10 V	3.4 mΩ - Enables <1.5 W conduction loss at 116 A (T_C = 25 °C), critical for high-current power stages.
Q_g typ.	33.5 nC - Low gate charge reduces driver power demand and enables fast turn-on/turn-off (t_d(on) = 18 ns typ.).
I_D continuous @ T_C = 25 °C	116 A - High current rating allows single-device implementation in 100–200 W server VRMs or telecom PSUs.
R_thJC max	1.35 °C/W - Enables efficient thermal path to heatsink; supports >90 W steady-state dissipation with modest cooling.
V_GS(th)	2–4 V - Gate threshold compatible with standard 5 V and 3.3 V logic-level drivers without level shifting.
Body diode V_SD	0.75–1.1 V @ I_S = 5 A - Low forward drop improves efficiency in bidirectional or freewheeling paths.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad on bottom). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); thermal pad area ≈ 3.76 mm × 4.90 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large exposed copper thermal pad; primary heat extraction path.
G (Pin 1 top-side marking)	Gate (G)	Single gate terminal located adjacent to source; layout minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g and R_DS(on) × Q_oss FOMs for improved efficiency in 100–500 kHz DC/DC stages.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Exposed drain thermal pad	Enables direct thermal interface to PCB copper or heatsink; achieves R_thJC = 1.1 °C/W (typ.) for high-power density layouts.
Low Q_gd/Q_g ratio	Q_gd = 4.5 nC (typ.) / Q_g = 33.5 nC → ~13 %; reduces Miller effect, improving EMI and dV/dt immunity.
Optimized body diode	t_rr = 67 ns (typ.) and soft recovery behavior minimize voltage overshoot and ringing in synchronous rectifier mode.

Applications

Server VRM Synchronous Rectifier	Telecom 48 V Input DC/DC Converter
Use Scenario: High-current (≥80 A), high-frequency (300–600 kHz) buck converter output stage in AI accelerator servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve full-load efficiency. Use Value: 3.4 mΩ R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, enabling >95 % peak efficiency at 12 V/100 A output.	Use Scenario: Primary-side switch in isolated half-bridge or active clamp forward converter for 48 V telecom power systems. IC Role / Device Role / Timing Role: Main switching transistor handling 80 V bus transients and 116 A peak currents during burst-mode operation. Use Value: 1.1 °C/W R_thJC and 92.5 W P_D allow sustained 80 A operation with minimal heatsinking in space-constrained base station modules.
OR-ing Controller for Redundant Power	Battery Protection Circuit in UPS
Use Scenario: Hot-swap and OR-ing function in dual-input 12 V/24 V redundant power supply for industrial PLCs. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current control with fast fault isolation. Use Value: Low V_SD (0.75 V typ.) and fast t_rr (67 ns) minimize forward drop and reverse recovery loss during switchover events.	Use Scenario: High-side protection switch in 24–48 V Li-ion battery backup system for network edge routers. IC Role / Device Role / Timing Role: Load disconnect and short-circuit protection switch with integrated avalanche energy rating (E_AS = 80 mJ). Use Value: 40 A I_AS and 80 mJ E_AS withstand inductive kickback from relay coils and motor loads during emergency shutdown.

Server VRM Synchronous Rectifier

Telecom 48 V Input DC/DC Converter

Use Scenario: High-current (≥80 A), high-frequency (300–600 kHz) buck converter output stage in AI accelerator servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve full-load efficiency.

Use Value: 3.4 mΩ R_DS(on) cuts conduction loss by >65 % vs. 40 V Schottky, enabling >95 % peak efficiency at 12 V/100 A output.

Use Scenario: Primary-side switch in isolated half-bridge or active clamp forward converter for 48 V telecom power systems.

IC Role / Device Role / Timing Role: Main switching transistor handling 80 V bus transients and 116 A peak currents during burst-mode operation.

Use Value: 1.1 °C/W R_thJC and 92.5 W P_D allow sustained 80 A operation with minimal heatsinking in space-constrained base station modules.

OR-ing Controller for Redundant Power

Battery Protection Circuit in UPS

Use Scenario: Hot-swap and OR-ing function in dual-input 12 V/24 V redundant power supply for industrial PLCs.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current control with fast fault isolation.

Use Value: Low V_SD (0.75 V typ.) and fast t_rr (67 ns) minimize forward drop and reverse recovery loss during switchover events.

Use Scenario: High-side protection switch in 24–48 V Li-ion battery backup system for network edge routers.

IC Role / Device Role / Timing Role: Load disconnect and short-circuit protection switch with integrated avalanche energy rating (E_AS = 80 mJ).

Use Value: 40 A I_AS and 80 mJ E_AS withstand inductive kickback from relay coils and motor loads during emergency shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N08N	R_DS(on) = 3.6 mΩ @ 10 V; Q_g = 37 nC; TO-220FP package (larger footprint, higher R_thJA).	Requires mechanical heatsink; less suitable for ultra-thin or high-density PCBs where PowerPAK SO-8 is preferred.	Select when board-level thermal management favors through-hole mounting or legacy TO-220 layout reuse.
ON Semiconductor NTMFS5C428NT1G	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 31 nC; same PowerPAK SO-8 footprint but lower I_D rating (100 A).	Marginally lower current capability; may require derating above 90 A continuous in high-ambient environments.	Select when gate drive strength is limited and lower Q_g prioritization outweighs 16 A I_D reduction.

Compared with IPP036N08N and NTMFS5C428NT1G, the SIR582DP-T1-RE3 offers the lowest R_DS(on) × Q_oss FOM and highest continuous current rating in the PowerPAK SO-8 form factor, making it optimal for space-constrained, high-efficiency 80 V switching applications requiring minimal thermal overhead.

Availability

SIR582DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, OR-ing power systems, and battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for SIR582DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR582DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIR582DP-T1-RE3 at case temperature of 70 °C?

The SIR582DP-T1-RE3 supports 93 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package under sustained high-power operation and must be validated against actual board-level thermal design using R_thJC = 1.1 °C/W (typ.) and ambient conditions.

Does SIR582DP-T1-RE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SIR582DP-T1-RE3 is rated for single-pulse avalanche with I_AS = 40 A (L = 0.1 mH) and E_AS = 80 mJ. This capability is verified per JEDEC standards and ensures robustness against inductive switching transients in hard-switched topologies where voltage spikes exceed V_DS.

What is the gate-source threshold voltage range for SIR582DP-T1-RE3, and how does it affect drive compatibility?

The SIR582DP-T1-RE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This logic-level threshold ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without requiring external level shifters, simplifying control circuitry in compact power modules.

How is thermal performance characterized for SIR582DP-T1-RE3, and what is the typical junction-to-case resistance?

The SIR582DP-T1-RE3 features a typical junction-to-case (drain) thermal resistance R_thJC of 1.1 °C/W, measured under steady-state conditions. This low value is enabled by the exposed copper drain pad in the PowerPAK SO-8 package and is critical for achieving >90 W power dissipation with minimal temperature rise when mounted to a heatsink or thermal plane.

Is SIR582DP-T1-RE3 suitable for synchronous rectification in high-frequency LLC resonant converters?

Yes, the SIR582DP-T1-RE3 is well-suited for synchronous rectification in LLC converters operating up to 1 MHz due to its low Q_g (33.5 nC typ.), low Q_gd/Q_g ratio (~13 %), and fast switching times (t_d(on) = 18 ns typ., t_f = 12 ns typ.), all contributing to reduced switching loss and improved light-load efficiency.

SIR582DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 28.9A (Ta), 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3360 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5.6W (Ta), 92.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR582DP-T1-RE3 FAQ

1.How can I place an order for SIR582DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR582DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR582DP-T1-RE3 reliable?

The price and inventory of SIR582DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR582DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR582DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR582DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR582DP-T1-RE3?

SIR582DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR582DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR582DP-T1-RE3?

For technical support, including SIR582DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR582DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR582DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR582DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR582DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR582DP-T1-RE3?

All SIR582DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR582DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR582DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR582DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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