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Vishay Siliconix SIR586DP-T1-RE3
- Part No.:
- SIR586DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR586DP-T1-RE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:8,178
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Product details
Overview
SIR586DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 5.8 mΩ at VGS = 10 V, Qg = 19.1 nC (typ.), and 78.4 A continuous drain current - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIR586DP-T1-RE3 datasheet, SIR586DP-T1-RE3 pinout, SIR586DP-T1-RE3 application, or SIR586DP-T1-RE3 equivalent, this page provides verified electrical parameters, thermal resistance values (RthJC = 1.4 °C/W), body diode characteristics (VSD = 0.77 V typ. at 5 A), and real-world use context for power supply and motor drive design.
Technical Context
This MOSFET employs TrenchFET® Gen V process technology to achieve ultra-low RDS(on) × Qg and RDS(on) × Qoss figures-of-merit, enabling high-frequency switching with minimized conduction and gate-drive losses. Its 80 V VDS rating supports operation across 48 V industrial bus and 60 V automotive auxiliary systems.
The device features 100 % Rg and UIS tested units, a gate threshold voltage of 2–4 V, and integrated source-drain diode with trr = 47 ns (typ.) and Qrr = 47 nC (typ.) - critical for zero-voltage switching (ZVS) and OR-ing applications requiring fast, low-loss reverse recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V nominal input systems with ≥25 % overvoltage margin for transient suppression. |
| RDS(on) max @ 10 V | 5.8 mΩ - enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in high-current DC/DC stages. |
| Qg typ. @ 7.5 V | 19.1 nC - allows efficient gate driving with standard 1-A peak drivers at ≤1 MHz switching frequencies. |
| ID continuous @ TC = 25 °C | 78.4 A - supports high-power POL converters and motor phase switches without derating on thermally enhanced PCBs. |
| RthJC max | 1.75 °C/W - enables direct thermal coupling to copper planes or heatsinks for junction temperature control under sustained load. |
| VSD @ IS = 5 A | 0.77 V (typ.) - lowers forward drop in bidirectional OR-ing and hot-swap paths, improving system efficiency vs. Schottky alternatives. |
| EAS | 45 mJ - withstands single-pulse avalanche energy during inductive turn-off transients in motor and solenoid drives. |
Pinout & Package
PowerPAK® SO-8 (leadless) package: 5.15 mm × 6.15 mm footprint, 1.04 mm height, exposed drain paddle on bottom side for thermal and electrical connection. Compatible with standard SO-8 reflow profiles (peak 260 °C); manual soldering not recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to large exposed copper paddle - primary thermal path and high-current return path. |
| G (Gate) | Control input | Single gate pad (Pin 1 top-view reference) - requires low-inductance layout to minimize ringing during 10 ns-scale switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V process | Delivers industry-leading RDS(on) × Qg FOM of ~0.11 Ω·nC - reduces combined conduction + switching loss by ≥15 % vs. prior-gen 80 V MOSFETs. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and ruggedness against unclamped inductive switching stress - critical for motor and converter reliability. |
| Low Qoss (58.2 pF) | Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and LLC topologies. |
| Optimized body diode (trr = 47 ns) | Reduces reverse recovery charge (Qrr = 47 nC) - suppresses shoot-through risk and EMI in synchronous rectifier configurations. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for consumer, industrial, and automotive production without compliance overhead. |
Applications
| Synchronous Rectification | Primary-Side Switch |
|---|---|
|
Use Scenario: Secondary-side switching in isolated 12 V/48 V output DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to eliminate forward voltage drop and improve full-load efficiency. Use Value: Achieves >95 % efficiency at 50 A output due to 5.8 mΩ RDS(on) and 0.77 V VSD, reducing thermal load by 3.2 W vs. 40 V Schottky. |
Use Scenario: High-side switch in non-isolated buck converters powering FPGA or ASIC core rails. IC Role / Device Role / Timing Role: Main power switch handling 60 A continuous current with fast 14 ns turn-on delay and 6 ns rise time. Use Value: Enables 500 kHz–1 MHz operation with minimal switching loss (Qg = 19.1 nC), supporting compact magnetics and reduced output capacitance. |
| OR-ing and Hot Swap | Battery Management System |
|
Use Scenario: Redundant 48 V power inputs in industrial controllers, where two supplies feed a common rail via back-to-back MOSFETs. IC Role / Device Role / Timing Role: Bidirectional OR-ing switch controlling current flow direction based on supply voltage priority. Use Value: Body diode VSD = 0.77 V enables immediate conduction on power-up; low RDS(on) limits voltage drop to <370 mV at 64 A. |
Use Scenario: Cell-balancing and protection switch in 13S Li-ion battery packs for e-bikes and energy storage. IC Role / Device Role / Timing Role: High-current discharge path switch and fault isolation element rated for 80 V bus and 78 A peak load. Use Value: Withstands 30 A avalanche current (IAS) and 45 mJ energy (EAS) during short-circuit events, eliminating need for external fuses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 6.2 mΩ @ 10 V; Qg = 22.5 nC; PowerSO-8 package (larger 6.2 × 5.0 mm, higher RthJC = 2.0 °C/W) | Higher gate charge increases driver loss; larger footprint limits layout density in space-constrained POL modules. | Prefer SIR586DP-T1-RE3 when board area and thermal performance are constrained; IRF6642TRPBF acceptable where legacy footprint compatibility is required. |
| DMTH8006LPS-13 | RDS(on) = 5.5 mΩ @ 10 V; Qg = 24.5 nC; PowerPAK 8x8 package (8.0 × 8.0 mm, RthJC = 1.2 °C/W) | Lower RDS(on) but 28 % higher Qg degrades high-frequency efficiency; larger package incompatible with SO-8 layouts. | Choose DMTH8006LPS-13 only if thermal budget is extremely tight and board space permits 8x8 mm footprint; SIR586DP-T1-RE3 offers optimal balance for SO-8-constrained designs. |
Compared with IRF6642TRPBF and DMTH8006LPS-13, the SIR586DP-T1-RE3 delivers superior RDS(on) × Qg FOM in a standard SO-8 footprint, enabling higher power density and lower gate-drive loss - especially valuable in 400–1000 kHz DC/DC converters where both conduction and switching losses dominate.
Availability
SIR586DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.
Supply support for SIR586DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIR586DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family - engineered specifically for high-frequency, high-current power conversion in server, telecom, and industrial power supplies where low RDS(on) × Qg is critical.
FAQ
What is the maximum continuous drain current for SIR586DP-T1-RE3 at 70 °C case temperature?
The SIR586DP-T1-RE3 supports 62.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions in the target application.
Does SIR586DP-T1-RE3 have avalanche capability, and what are its rated limits?
Yes, the SIR586DP-T1-RE3 is rated for single-pulse avalanche with IAS = 30 A and EAS = 45 mJ under L = 0.1 mH test conditions. These values are production-tested and guaranteed per datasheet - enabling use in inductive switching circuits like motor drives where unclamped inductive energy must be safely absorbed.
What is the gate threshold voltage range for SIR586DP-T1-RE3, and how does it vary with temperature?
The SIR586DP-T1-RE3 has a gate-source threshold voltage VGS(th) of 2–4 V at TJ = 25 °C, with a temperature coefficient of −6.7 mV/°C. This negative coefficient ensures inherent current limiting at elevated junction temperatures, improving thermal stability in high-power operation.
Can SIR586DP-T1-RE3 be used in hot-swap applications, and what body diode parameters support this?
Yes, the SIR586DP-T1-RE3 is qualified for hot-swap use due to its low VSD = 0.77 V (typ.) at 5 A and fast trr = 47 ns (typ.). These parameters minimize forward conduction loss during insertion and reduce reverse recovery stress during load disconnection - key for reliable inrush control and fault isolation.
What is the thermal resistance from junction to case (RthJC) for SIR586DP-T1-RE3, and how is it measured?
The SIR586DP-T1-RE3 has a typical RthJC of 1.4 °C/W and maximum of 1.75 °C/W, measured from junction to the exposed drain paddle (case). This value assumes direct thermal interface to a copper plane or heatsink and is critical for calculating maximum allowable power dissipation under steady-state conditions.
SIR586DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.7A (Ta), 78.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1905 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 71.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR586DP-T1-RE3 FAQ
1.How can I place an order for SIR586DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR586DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR586DP-T1-RE3 reliable?
The price and inventory of SIR586DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR586DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR586DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR586DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR586DP-T1-RE3?
SIR586DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR586DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR586DP-T1-RE3?
For technical support, including SIR586DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR586DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR586DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR586DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR586DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR586DP-T1-RE3?
All SIR586DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR586DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR586DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR586DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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